Anodic oxidation of wastewater containing the Reactive Orange 16 Dye using heavily boron-doped diamond electrodes

Boron-doped diamond (BDD) films grown on the titanium substrate were used to study the electrochemical degradation of Reactive Orange (RO) 16 Dye. The films were produced by hot filament chemical vapor deposition (HFCVD) technique using two different boron concentrations. The growth parameters were controlled to obtain heavily doped diamond films. They were named as E1 and E2 electrodes, with acceptor concentrations of 4.0 and 8.0 x 10(21) atoms cm(-3), respectively. The boron levels were evaluated from Mott-Schottky plots also corroborated by Raman`s spectra, which characterized the film quality as well as its physical property. Scanning Electron Microscopy showed well-defined microcrystalline grain morphologies with crystal orientation mixtures of (1 1 1) and (1 00). The electrode efficiencies were studied from the advanced oxidation process (AOP) to degrade electrochemically the Reactive Orange 16 azo-dye (RO16). The results were analyzed by UV/VIS spectroscopy, total organic carbon (TOC) and high-performance liquid chromatography (HPLC) techniques. From UV/VIS spectra the highest doped electrode (E2) showed the best efficiency for both, the aromaticity reduction and the azo group fracture. These tendencies were confirmed by the TOC and chromatographic measurements. Besides, the results showed a direct relationship among the BDD morphology, physical property, and its performance during the degradation process. (C) 2011 Elsevier B.V. All rights reserved.

Organic additive-copper(II) complexes as plating precursors

Cu(II) ions previously coordinated with typical electroplating organic additives were investigated as an alternative source of metal for plating bath. The coordination complexes were isolated from reaction between CuSO(4) and organic additives as ligands (oxalate ion, ethylenediamine or imidazole). Deposits over 1010 steel were successfully obtained from electroplated baths using the complexes without any addition of free additives, at pH = 4.5 (H(2)SO(4)/Na(2)SO(4)). These deposits showed better morphologies than deposits obtained from CuSO(4) solution either in the absence or presence of oxalate ion as additive (40 mmol L(-1)), at pH = 4.5 (H(2)SO(4)/Na(2)SO(4))It is suggestive that the starting metal plating coordinated with additives influences the electrode position processes, providing deposits with corrosion potentials shifted over + 200 mV in 0.5 mol L(-1) NaCl (1 mV s(-1)). The resistance against corrosion is sensitive to the type of additive-complex used as precursor. The complex with ethylenediamine presented the best deposit results with the lowest pitting potential (-0.27 V vs 3.0 mol L(-1) CE). It was concluded that the addition of free additives to the electrodeposition baths is not necessary when working with previously coordinated additives. Thus, the complexes generated in ex-situ are good alternatives as plating precursors for electrodeposition bath. (C) 2009 Elsevier B.V. All rights reserved.

Estudo exploratório da deposição de filmes de diamante em alguns substratos cerâmicos

o presente trabalho é um estudo exploratório a respeito da síntese de filmes de diamante via deposiçãoquímica a vapor (CVD) sobre alguns substratos cerâmicos: diboreto de titânio (TiB2), ítria (Y20a), zircão (ZrSi04), zircônia parcialmente e totalmente estabilizada com ítria (Zr02), pirofilita ( Al2Si4OlO(OHh), .alumina (Al2Oa) e nitreto de boro hexagonal (h-BN). Estes substratos foram produzidos, em sua maioria, a partir da sinterização de pós micrométricos em altas temperaturas. Além do estudo em relação a possíveis candidatos alternativos ao tradicional silício para o crescimento de filmes auto-sustentáveis, procuramos encontrar substratos onde o filme aderisse bem e cujas propriedades tribológicas pudessem ser melhoradas com o recobrimento com filme de diamante.Dentre os materiais selecionados, constatamos que a topografia da superfície relacionada à densidade de contornos de grão, desempenha um papel relevante na nucleação do diamante. Além disso, os materiais que favorecem a formação de carbonetos conduziram a melhores resultados na nucleação e crescimento do filme, indicando que a ação da atmosfera reativa do CVD com o substrato também contribui decisivamente para o processo de nucleação. A partir dos resultados obtidos, concluímos que a aderência do filme de diamante ao zircão é excelente, assim como a qualidade do filme, o que pode serexplorado convenientemente caso as propriedades mecânicas do sinterizado de zircão sejam adequadas. No caso da zircônia parcialmente estabilizada, os resultados obtidos foram surpreendentes e este material poderia substituir o convencional substrato de silício para a deposição de filmes auto-sustentados de diamante, com inúmeras vantagens, dentre elas o fato de ser reutilizável e de não ser necessário ataque com ácidos para remoção do substrato, o que evita a geração de resíduos químicos.

Caracterização elétrica de estruturas metal/dielétrico high-k/Si

Foram estudadas as propriedades elétricas de estruturas MOS envolvendo materiais com Zr e Hf: Al/HfO2/Si, Al/HfAlO/Si, Al/ZrO2/Si e Al/ZrAlO/Si depositadas por JVD (Jet Vapor Deposition) submetidas a diferentes doses de implantação de nitrogênio e tratamentos térmicos; Au/HfO2/Si e Au/HfxSiyOz/Si preparadas por MOCVD (Metal-Organic Chemical Vapor Deposition) e Au/HfxSiyOz/SiO2/Si preparadas por sputtering reativo em O2 submetidas a tratamentos térmicos distintos. Para isso, além das medidas de C-V e I-V padrão, foi desenvolvido o método da condutância para estudo da densidade de estados na interface dielétrico/Si, o qual mostrou-se mais viável para as estruturas com dielétricos alternativos. A inclusão de Al na camada de dielétrico, bombardeamento por íons de nitrogênio, e tratamentos térmicos rápidos em atmosferas de O2 e N2 foram responsáveis por mudanças nas propriedades das amostras. Diversos mecanismos físicos que influenciam as propriedades elétricas dessas estruturas foram identificados e discutidos. Foi constatado que as interfaces com menores densidades de estados foram as das amostras preparadas por MOCVD e sputtering reativo.

Effects of strontium and calcium simultaneous substitution on electrical and structural properties of Pb1-x-y Ca (x) Sr (y) TiO3 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural and optical properties of chlorinated plasma polymers

Amorphous hydrogenated chlorinated carbon (a-C:H:Cl) films were produced by the plasma polymerization of chloroform-acetylene-argon mixtures in a radiofrequency plasma enhanced chemical vapor deposition system. The main parameter of interest was the proportion of chloroform in the feed, R(C), which was varied from 0 to 80%. Deposition rates of 80 nm min (1) were typical for the chlorinated films. Infrared reflection-absorption spectroscopy revealed the presence of C-Cl groups in all the films produced with chloroform in the feed. X-ray photoelectron spectroscopy confirmed this finding, and revealed a saturation of the chlorine content at similar to 47 at.% for R(C)>= 40%. The refractive index and optical gap, E(04), of the films were roughly in the 1.6 to 1.7, and the 2.8 to 3.7 eV range. These values were calculated from transmission ultraviolet-visible-near infrared spectra. Chlorination leads to an increase in the water surface contact angle from similar to 40 degrees to similar to 77 degrees. (C) 2011 Elsevier B.V. All rights reserved.

Synthesis, optical and ferroelectric properties of PZT thin films: experimental and theoretical investigation

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Plasma-polymerized hexamethyldisilazane treated by nitrogen plasma immersion ion implantation technique

This paper describes the effect of nitrogen Plasma Immersion Ion Implantation (PIII) on chemical structure, refraction index and surface hardness of plasma-polymerized hexamethyldisilazane (PPHMDSN) thin films. Firstly, polymeric films were deposited at 13.56 MHz radiofrequency (RF) Plasma Enhanced Chemical Vapour Deposition (PECVD) and then, were treated by nitrogen PIII from 15 to 60 min. Fourier Transformed Infrared (FTIR) spectroscopy was employed to analyse the molecular structure of the samples, and it revealed that vibrations modes at 3350 cm(-1), 2960 cm(-1), 1650 cm(-1), 1250 cm(-1) and 1050 cm(-1) were altered by nitrogen PIII. Visible-ultraviolet (vis-UV) spectroscopy was used to evaluate film refractive index and the results showed a slight increase from 1.6 to 1.8 following the implantation time. Nanoindentation revealed a surface hardness rise from 0.5 to 2.3 GPa as PIII treatment time increased. These results indicate nitrogen PIII is very promising in improving optical and mechanical properties of PPHMDSN films.

Amorphous hydrogenated carbon films treated by SF(6) plasma

This work was performed to verify the chemical structure, mechanical and hydrophilic properties of amorphous hydrogenated carbon films prepared by plasma enhanced chemical vapor deposition, using acetylene/argon mixture as monomer. Films were prepared in a cylindrical quartz reactor, fed by 13.56 MHz radiofrequency. The films were grown during 5 min, for power varying from 25 to 125 W at a fixed pressure of 9.5 Pa. After deposition, all samples were treated by SF(6) plasma with the aim of changing their hydrophilic character. Film chemical structure investigated by Raman spectroscopy, revealed the increase of sp(3) hybridized carbon bonds as the plasma power increases. Hardness measurements performed by the nanoindentation technique showed an improvement from 5 GPa to 14 GPa following the increase discharge power. The untreated films presented a hydrophilic character, which slightly diminished after SF(6) plasma treatment.

Development of amorphous carbon protective coatings on poly(vinyl)chloride

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Properties of hydrogenated amorphous carbon films deposited by PECVD and modified by SF6 plasma

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

An in vitro evaluation of apicoectomies and retropreparations using different methods

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Ultrasonic versus high-speed cavity preparation: Analysis of increases in pulpal temperature and time to complete preparation

Statement of problem. The use of ultrasonic tips has become an alternative for cavity preparation. However, there are concerns about this type of device, particularly with respect to intrapulpal temperatures and cavity preparation time.Purpose. The purpose of this study was to analyze pulpal temperature increases generated by an ultrasonic cavity preparation with chemical vapor deposition (CVD) tips, in comparison to preparation with a high-speed handpiece with a diamond rotary cutting instrument. The time required to complete the cavity preparation with each system was also evaluated.Material and methods. Thermocouples were positioned in the pulp chamber of 20 extracted human third molars. Slot-type cavities (3 x 3 x 2 mm) were prepared on the buccal and the lingual surfaces of each tooth. The test groups were: high-speed cavity preparation with diamond rotary cutting instruments (n = 20) and ultrasonic cavity preparation with CVD points (n = 20). During cavity preparation, the increases In pulpal temperature, and the time required for the preparation, were recorded and analyzed by Student's t test for paired samples (alpha = .05).Results. The average pulpal temperature increases were 4.3 degrees C for the high-speed preparation and 3.8 degrees C for the ultrasonic preparation, which were statistically similar (P = .052). However, significant differences were found (P < .001) for the time expended (3.3 minutes for the high-speed bur and 13.77 minutes for the ultrasound device).Conclusions. The intrapulpal temperatures produced during cavity preparation by ultrasonic tips versus high-speed bur preparation were similar. However, the use of the ultrasonic device required 4 times longer for the completion of a cavity preparation.

Preparation and characterization of nanocrystalline h-BN films prepared by PECVD method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

XPS investigation of plasma-deposited polysiloxane films irradiated with helium ions

This work describes an XPS investigation of plasma-deposited polysiloxane films irradiated with 170 keV He+ ions at fluences, Phi, ranging from 1 x 10(14) to 1 x 10(16) cm(-2). Modifications in the atomic concentrations of the surface atoms with (D were revealed by changes in the [O]/[Si], [O]/[C] and [C]/[Si] atomic ratios. Surface chemical structure modifications were evidenced by the increasing C1s peak width and asymmetry as Phi was increased, due to the formation of ether and carboxyl functionalities. Moreover, structural transformations were indicated by the positive binding energy shift of the Si2p peaks, due to the increasing Si oxidation. Correlations of the XPS data with other results from previous work on polysiloxanes illustrate the role of ion beam-induced bond breaking on the structural modifications.