Mineral Trioxide Aggregate-based Endodontic Sealer Stimulates Hydroxyapatite Nucleation in Human Osteoblast-like Cell Culture

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Activity and characterization by XPS, HR-TEM, Raman spectroscopy, and BET surface area of CuO/CeO2-TiO2 catalysts

Structural and textural studies of a CuO/TiO2 System modified by cerium oxide were conducted using Raman spectroscopy, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and N-2 absorption (BET specific surface area). The introduction of a minor amount of CeO2 (Ce0.09Ti0.82O1.91CU0.09 sample) resulted in a material with the maximum surface area value. The results of Raman spectroscopy revealed the presence of only two crystalline phases, TiO2 anatase and CeO2 cerianite, with well-dispersed copper species. TEM micrographs showed a trend toward smaller TiO2 crystallites when the cerium oxide content was increased. The XPS analysis indicated the rise of a second peak in Ti 2p spectra with the increasing amount of CeO2 located at higher binding energies than that due to the Till in a tetragonal symmetry. The CuO/TiO2 system modified by CeO2 displayed a superior performance for methanol dehydrogenation than the copper catalyst supported only on TiO2 or CeO2.

Schottky emission in nanoscopically crystallized Ce-doped SnO2 thin films deposited by sol-gel-dip-coating

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Energia de superfície para nanossuperfícies de TiO2 na direção (001)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Microwave-hydrothermal synthesis of perovskite bismuth ferrite nanoparticles

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural Investigations of Glass Ceramics in the Ga2S3-GeS2-CsCl System

Transparent glass ceramics have been prepared in the Ga2S3-GeS2-CsCI pseudoternary system appropriate heat treatment time and temperature. In situ X-ray diffraction at the heat treatment temperature and Cs-133 and Ga-71 solid-state nuclear magnetic resonance have been performed in function of annealing time to understand the crystallization process. Both techniques have evidenced the nucleating agent role played by gallium with the formation of Ga2S3 nanocrystals. on the other hand, cesium is incorporated very much later into the crystallites during the ceramization. Moreover, the addition of CsCl, which is readily integrated into the glassy network, permits us to shift the optical band gap toward shorter wavelength. Thus, new glass ceramics transmitting in the whole visible range up to 11.5 mu m have been Successfully synthesized from the (Ga2S3)(35)-(GeS2)(25)-CsCl40 base glass composition.

Preparation and characterization of nanocrystalline h-BN films prepared by PECVD method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural and vibrational analysis of nanocrystalline Ga1-xMnxN films deposited by reactive magnetron sputtering

The structural and vibrational properties of nanocrystalline Ga1-xMnxN films deposited by reactive magnetron sputtering were analyzed in a wide composition range (0 < x < 0.18). The films were structurally characterized using x-ray diffraction with Rietveld refinement. The corresponding vibrational properties were investigated using micro-Raman and Fourier transform infrared spectroscopies. The films present a high crystallized fraction, crystallites having wurtzite structure, and high orientation texture with the c axis oriented perpendicular to the substrate surface. Rietveld analysis indicates that Mn atoms are incorporated substitutionally into Ga positions and show that the ionic character of cation-N bonds along the c axis is favored by the Mn incorporation. No evidence for Mn segregation or Mn rich phases was found in the composition range analyzed. Micro-Raman scattering spectra and infrared absorption experiments showed progressive changes with the increase of x and monotonic shifts of the GaN TO and LO peaks to lower frequencies. The structural and vibrational analyses are compared and the influence of Mn on the static and dynamic properties of the lattice is analyzed. (C) 2007 American Institute of Physics.

Effect of In concentration in the starting solution on the structural and electrical properties of ZnO films prepared by the pyrosol process at 450 degrees C

Undoped and indium-doped Zinc oxide (ZnO) solid films were deposited by the pyrosol process at 450 degrees C on glass substrates From solutions where In/Zn ratio was 2, 5, and 10 at.%. Electrical measurements performed at room temperature show that the addition of indium changes the resistance of the films. The resistivities of doped films are less than non-doped ZnO films by one to two orders of magnitude depending on the dopant concentration in the solution. Preferential orientation of the films with the c-axis perpendicular to the substrate was detected by X-ray diffraction and polarized extended X-ray absorption fine structures measurements at the Zn K edge. This orientation depends on the indium concentration in the starting solution. The most textured films were obtained for solutions where In/Zn ratio was 2 and 5 at.%. When In/Zn = 10 at.%, the films had a nearly random orientation of crystallites. Evidence of the incorporation of indium in the ZnO lattice was obtained from extended X-ray absorption fine structures at the In and Zn K edges. The structural analysis of the least resistive film (Zn/In = 5 at.%) shows that In substitutes Zn in the wurtzite structure. (C) 2000 Elsevier B.V. B.V. All rights reserved.

Stoichiometry unbalance and photoluminescence emission in Ga1-XAsX films prepared by flash evaporation

Both narrow and broad photoluminescence bands were observed in Ga1-XAsX films prepared by flash evaporation of polycrystalline GaAs containing native C impurities. The observed narrow crystalline-like bands are similar to band-to-band and C acceptor impurity emissions in crystalline GaAs. The narrow bands are evidence that the As excess favors the PL active GaAs crystallite formation in films deposited onto silicon (10 0) substrate, even when the As excess is very large (X = 0.84). This favoring is not observed in twin samples grown on silica glass substrates nor on Ga rich samples, indicating the important role of the combined effect of the As excess and Si substrate in the GaAs crystallite formation. The broad amorphous-like bands were observed in Ga rich and in moderately As rich samples. The photoluminescence emission is compared with the microstructure of the material as determined from the micro-Raman, absorption edge and reflectance measurements. The volume fraction of the crystallites formed is small and PL emission indicates that the crystallite electronic quality is much better than the ones formed heat treating films grown on silica glass substrates. (C) 2004 Elsevier B.V. All rights reserved.

Sintering and crystallite growth of nanocrystalline copper doped tin oxide

The effect of Cu2+ contents and of firing temperature on sintering and crystallite growth of nanocrystalline SnO2 xerogels was analyzed by thermoanalysis (mass loss (TG), linear shrinkage, and differential thermal analysis (DTA)), X-ray powder diffraction (XRPD), and EXAFS (extended X-ray absorption fine structures) measurements. Samples were prepared by two methods: (a) coprecipitation of a colloidal suspension from aqueous solution containing both Sn(IV) and Cu(II) ions and (b) grafting copper(II) species on the surface of tin pride gel. The thermoanalysis has shown that the shrinkage associated with the mass loss decreases by increasing the amount of copper. The EXAFS measurements carried out at the Cu K edge have evidenced the presence of copper in substitutional solid solution for the dried xerogel prepared with 0.7 mol % of copper, while for higher concentration of doping, copper has been observed also at the external surface of crystallites. The solid solution is metastable and copper migrates toward the surface during firing. The XRPD and DTA results have shown a recrystallization process near 320 degrees C, which leads to crystallite growth. The presence of copper segregated near the crystallite surface controls its growth.

Synthesis and luminescence properties of water dispersible Eu3+-doped boehmite nanoparticles

Nanocrystallized boehmite gamma-AlOOH center dot nH(2)O had been synthesized by spray-drying (SD) of a solution of aluminium tri-sec-butoxide peptized by nitric acid. The sub-micronic spherical particles obtained had an average diameter of 500 nm and were built of 100 nm or less platelet-like sub-particles. The average crystallite size calculated from XRD was 1.6 nm following the b axis (i.e. one unit cell) and 3-4 nm perpendicular to b. As a result of the nanometric sizes of crystallites, there was a large surface free for water adsorption and it was found to be n = 1.18 +/- 0.24H(2)O per AlOOH. The SD spheres spontaneously dispersed in water at room temperature and formed stable-over months-suspensions with nanometre-size particles (25-85 nm). Luminescent europium-doped nanocrystallized boehmites AlOOH: Eu (Al0.98Eu0.02OOH center dot nH(2)O) were synthesized the same way by SD and demonstrated the same crystallization properties and morphologies as the undoped powders. It is inferred from the Eu3+ luminescence spectroscopy that partly hydrated europium species are immobilized on the boehmite nanocrystals where they are directly bonded to alpha(OH) groups of the AlOOH surface. The europium coordination is schematically written [Eu3+(OH)(alpha)(H2O)(7-alpha/2)]. The europium-doped boehmite from SD spontaneously dispersed in water: the luminescence spectroscopy proves that most of the Eu3+ ions were detached from the NPs during water dispersion. The AlOOH: Eu nanoparticles were modified by the amine acid asparagine (ASN). The modification aimed to render the NPs compatible for further bio-functionalization. After surface modification, the NPs easily dispersed in water; the luminescence spectra after dispersion prove that the Eu3+ ions were held at the boehmite surface.

Structural electrical and optical properties of undoped and indium doped ZnO thin films prepared by the pyrosol process at different temperatures

The influence of the substrate temperature on the structural features and opto-electrical properties of undoped and indium-doped ZnO thin films deposited by pyrosol process was investigated. The addition of indium induces a drastic decrease (by a factor approximate to 10(10) for samples deposited at 300 degreesC) in the electrical resistivity of films, the lowest electrical resistivity (6 mOmega-cm) being observed for the film deposited at 450 degreesC. Films are highly transparent (>80%) in the Vis-NIR ranges, and the optical band gap exhibits a blue shift (from 3.29 to 3.33 eV) for the In-doped films deposited at increasing temperature. Preferential orientation of the ZnO crystallites with the c-axis perpendicular to the substrate surface and an anisotropic morphology of the nanoporous structure was observed for films growth at 300 and 350 degreesC. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Drude's model calculation rule on electrical transport in Sb-doped SnO2 thin films, deposited via sol-gel

The evaluation of free carrier concentration based on Drude's theory can be performed by the use of optical transmittance in the range 800-2000 nm (near infrared) for Sb-doped SnO2 thin films. In this article, we estimate the free carrier concentration for these films, which are deposited via sol-gel dip-coating. At approximately 900 mn, there is a separation among transmittance curves of doped and undoped samples. The plasma resonance phenomena approach leads to free carrier concentration of about 5 x 1020 cm(-3). The increase in the Sb concentration increases the film conductivity; however, the magnitude of measured resistivity is still very high. The only way to combine such a high free carrier concentration with a rather low conductivity is to have a very low mobility. It becomes possible when the crystallite dimensions are taken into account. We obtain grains with 5 nm of average size by estimating the grain size from X-ray diffraction data, and by using line broadening in the diffraction pattern. The low conductivity is due to very intense scattering at the grain boundary, which is created by the presence of a large amount of nanoscopic crystallites. Such a result is in accordance with X-ray photoemission spectroscopy data that pointed to Sb incorporation proportional to the free electron concentration, evaluated according to Drude's model. (c) 2006 Elsevier Ltd. All rights reserved.

Effect of the bath pH on the electrodeposition of nanocrystalline Pd-Co alloys and their magnetic properties

The effect of the bath pH on the electrodeposition of nanocrystalline Pd-Co alloys and on their magnetic properties was studied. The pH practically did not affect the alloy composition. Conversely, the pH showed a significant influence on the shape and size of crystallites. Two different crystallites morphology were observed depending on the bath pH. A crystallite size ranging from 18.2 to 30 nm was obtained from X-ray diffractometry (XRD) patterns using the Scherrer's method. Also from the XRD patterns the lattice strain percentage was calculated and correlated with the residual stress, which probably originated during the film electrodeposition on the substrate. Some alloy magnetic properties showed small variations. In contrast, high and unexpected coercivities were obtained reaching a maximum of 1.69 kOe at pH 5.5. The high coercivity values were attributed to the presence of residual stress at the film-substrate interface, which increased as the bath pH and crystallite size decrease, both of them contributing simultaneously to increase in coercivity. (C) 2006 Elsevier B.V. All rights reserved.