904 resultados para A. Powders: solid state reaction


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Based on graphic analysis design method of optical resonator, a simple design expression of V-folded cavity of end-pumped solid-state lasers with TEM00 operation is described, which satisfies two criterias of the resonator design. We give numerical simulation of spot size as a function of thermal focal length using this design approach whose advantages are validated experimentally.

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A kilowatt diode-pumped solid state heat capacity laser is fabricated with a double-slab Nd:YAG. Using the theoretical model of heat capacity laser output laser characteristics, the relationships between the output power, temperature and time are obtained. The slab is 59 x 40 4.5mm(3) in size. The average pump power is 11.2kW, the repetition rate is 1kHz, and the duty cycle 20%. During the running time of 1s, the output energy of the laser has a fluctuation with the maximal output energy at 2.06J, and the maximal output average power is 2.06kW. At the end of the second, the output energy declines to about 50% compared to the beginning. The thermal effects can be improved with one slab cooled by water. The experimental results are consistent with calculation data.

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A novel laser resonator for compensating depolarization loss that is due to thermally induced birefringence in active rod is reported. As this new structure being applied to an electro-optic Q-switched LIDA side-pumped Nd:YAG laser operating at a repetition rate of 1000 Hz, substantial reduction in depolarization loss has been observed, the output pulse energy is improved about 56% from that of a traditional resonator without compensation structure. With incident pump energy of 450 mJ per pulse, linearly polarized output energy of 30 mJ per pulse is achieved, the pulse duration is less than 15 ns, and the peak power of pulse is about 2 MW. The extinction ratio of laser beam is better than 10:1, and the beam divergence is 1.3 mrad with beam diameter of around 2.5 mm. (c) 2006 Published by Elsevier B.V.

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A series of binary borosilicate glasses prepared by the sol-gel method are shown to be bioactive. Tetraethyl orthosilicate (TEOS) and trimethylborate (TMB) in acidic medium are used to prepare xB(2)O(3)center dot(1-x)SiO2 glass systems for x = 0.045-0.167. The formation of a layer of apatite-like mineral on the glass surface becomes apparent after soaking in simulated body fluid for 48 h. We have measured the B-11-B-11 homonuclear second moments of the borosilicate glasses and inferred that no macroscopic phase separation occurred in our glasses. The B-11 chemical shift data also show that the formation of clustered boroxol rings is negligible in our glass system. Although the bioactivity of our borosilicate glasses is less than that of CaO-SiO2 sol-gel glasses, these simple binary systems could be taken as reference glass systems for the search of new bioactive borosilicate glasses. (C) 2008 Elsevier Ltd. All rights reserved.

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Os materiais ferroelétricos têm sido utilizados em muitas áreas da tecnologia e da ciência, pois possuem um grande número de aplic§Ãµes, como: sensores; transdutores; capacitores; dispositivos ópticos; dentre outras. A busca por novos materiais cerâmicos ferroelétricos tem sido grande. Um dos materiais cerâmicos ferroelétricos mais estudados é o titanato de bário (BT). São vários os métodos de produção e caracteriz§Ã£o do titanato de bário. Neste trabalho, pós cerâmicos de titanato de bário foram obtidos por re§Ã£o do estado sólido a partir de misturas reacionais calcinadas em diferentes temperaturas entre 400C e 900C. Foram três as misturas reacionais: não dopadas; dopadas com 1%; e dopadas com 5% de dióxido de cério (CeO2). A identific§Ã£o da form§Ã£o do BT, nos pós cerâmicos produzidos, foi feita a partir de três técnicas de caracteriz§Ã£o: difr§Ã£o de raios X (DRX); espectroscopia fotoacústica (PAS); e técnicas de análise térmica. Com a técnica DRX, difratogramas mostraram que a plena form§Ã£o do titanato de bário ocorreu a partir da temperatura de calcin§Ã£o de 700C. Para a amostra não dopada com cério e calcinada a 800C, houve deslocamento de todos os picos de difr§Ã£o. Nas amostras dopadas com dióxido de cério houve deslocamento de todos os picos de difr§Ã£o, em rel§Ã£o as amostras não dopadas. Observou-se também que nas amostras dopadas com 5% de CeO2, e calcinadas a 700C e 800C, resíduos de dióxido de cério foram observados nos difratogramas. Com a técnica PAS, espectros de absorção foram obtidos. Foi possível observar uma grande diferença de absorção da amostra calcinada a 600 e 630C, indicando a form§Ã£o do titanato de bário a partir da temperatura de 630C, nas amostras sem a dopagem dióxido de cério. Houve um alargamento nas bandas de absorção a partir da temperatura de 600C, quando o dióxido de cério entrou na matriz. Foi também possível determinar as energias de band-gap das amostras utilizando o método de Tauc. Com as técnicas de análise térmica, em especial através da técnica termogravimétrica (TG/DTG), foi comprovado que até 400C não havia form§Ã£o de titanato de bário. Visto que nesta temperatura de calcin§Ã£o houve a maior perda de massa durante a rampa de aquecimento. O início da form§Ã£o do titanato de bário foi observado a partir da temperatura de calcin§Ã£o de 500C, assim como nas técnicas DRX e PAS. Portanto, com os resultados apresentados, foi demonstrada a identific§Ã£o da form§Ã£o do titanato de bário nas misturas reacionais calcinadas, com auxílio das potencialidades das três técnicas utilizadas.

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Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10(6) A cm(-2)). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10(4) A cm(-2) at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism.

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This paper describes a new strategy to make a full solid-state, flexible, dye-sensitized solar cell (DSSC) based on novel ionic liquid gel, organic dye, ZnO nanoparticles and carbon nanotube (CNT) thin film stamped onto a polyethylene terephthalate (PET) substrate. The CNTs serve both as the charge collector and as scaffolds for the growth of ZnO nanoparticles, where the black dye molecules are anchored. It opens up the possibility of developing a continuous roll to roll processing for THE mass production of DSSCs.

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Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10 6 A cm -2). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10 4A cm -2 at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism. © 2012 Macmillan Publishers Limited. All rights reserved.