Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors

We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation.

Mixed convection adjacent to non-isothermal vertical surfaces

Study of laminar boundary layer in mixed convection from vertical plates is carried out. The surface temperature along the vertical plate is assumed to vary arbitrarily with vertical distance. Perturbation technique is used to solve the governing boundary layer equations. The differentials of the wall temperature are used as perturbation elements, which are functions of vertical distance, to obtain universal functions. The universal functions are valid for any type of vertical wall temperature variation. Heat transfer rates and fluid velocity inside the boundary layer can be expressed and calculated using these universal functions. Heat transfer rates are obtained for the special cases of power-law variation of the wall temperature. The effect of the governing parameter (Gr(y)/Re-y(2)) and the power index of the power-law wall temperature variation on heat transfer rates is studied. For the purpose of validation, the mixed convection results obtained by the present technique pertaining to the special cases of isothermal vertical wall are compared with those obtained by similarity analysis reported in literature, and the agreement is found to be good. (C) 2012 Elsevier Ltd. All rights reserved.

Natural Convection in a Vertical Channel with Arrays of Flush-Mounted Heaters on Opposite Conductive Walls

Three-dimensional numerical study of natural convection in a vertical channel with flush-mounted discrete heaters on opposite conductive substrate walls is carried out in the present work. Detailed flow and heat transfer characteristics are presented for various Grashof numbers. The heat transfer effects on one wall by the presence of heaters on its opposite wall is examined. It is found that heat transfer rates on one wall are increased by the presence of heaters on its opposite wall. The thermal boundary layers on the opposite walls complement each other for enhanced heat transfer. The effects of spacing between the heated walls, spacings between heaters and substrate conductivity on flow and heat transfer are examined. Existence of optimum spacings between the heated walls for maximum heat transfer and mass flow are observed. It is found that the heat transfer and fluid flow do not follow the same optimum spacings. Mass flow rate reaches maximum value at a wall spacing greater than the spacing for maximum heat transfer. This is because the interaction of thermal boundary layers on individual walls ceases at a lower spacing before the velocity boundary layers separate each other. It is found that increased spacings between heaters reduce individual heater temperatures provided the heaters close to exit on both substrates avail sufficient substrate potions on the exit side. Insufficient substrate portions between the exit heaters and the exit cause abnormal local temperature rise in the exit heaters which are the hottest ones among all the heaters. Optimal heater spacings exist for minimum hottest heater temperature rise. Correlations are presented for dimensionless mass flow rate, temperature maximum, and average Nusselt number.

Study of conjugate natural convection between vertical coaxial rectangular cylinders

Laminar natural convection between two coaxial vertical rectangular cylinders is numerically studied in this work. The outer cylinder is connected with vertical rectangular inlet and outlet pipes. The inner cylinder dissipates volumetric heat. The fluid flow and heat transfer characteristics between the cylinders are analyzed in detail for various Grashof numbers. The heat transfer rates on the individual faces of the inner cylinder are reported. The bottom face of the inner cylinder is found to associate with much higher heat rates than those of the other faces. The average Nusselt number on bottom face is more than 2.5 times of the Nusselt number averaged on all the faces. At a given elevation, local Nusselt number on the inner cylinder faces increases towards cylinder edges. The effect of thermal condition of the walls of outer cylinder, inlet and outlet on the natural convection is analyzed. The thermal condition shows strong qualitative and quantitative impact on the fluid flow and heat transfer. The variation of induced flow rate, dimensionless maximum temperature and average Nusselt numbers with Grashof number is studied. Correlations for dimensionless buoyancy-induced mass flow rate and temperature maximum are presented. (c) 2012 Elsevier Ltd. All rights reserved.

Diketopyrrolopyrrole-Diketopyrrolopyrrole-Based Conjugated Copolymer for High-Mobility Organic Field-Effect Transistors

In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a copolymer with exceptional properties such as extended absorption characteristics (up to similar to 1100 nm) and field-effect electron mobility values of >1 cm(2) V-1 s(-1). The synthesis of this novel DPP-DPP copolymer in combination with the demonstration of transistors with extremely high electron mobility makes this work an important step toward a new family of DPP-DPP copolymers for application in the general area of organic optoelectronics.

A new diketopyrrolopyrrole-based co-polymer for ambipolar field-effect transistors and solar cells

A new thieno3,2-b]thiophenediketopyrrolopyrrole-benzo1,2-b:4,5-b']dithio phene based narrow optical gap co-polymer (PTTDPP-BDT) has been synthesized and characterized for field-effect transistors and solar cells. In field-effect transistors the polymer exhibited ambipolar charge transport behaviour with maximum hole and electron mobilities of 10(-3) cm(2) V-1 s(-1) and 10(-5) cm(2)V(-1) s(-1), respectively. The respectable charge transporting properties of the polymer were consistent with X-ray diffraction measurements that showed close molecular packing in the solid state. The difference in hole and electron mobilities was explained by density functional theory calculations, which showed that the highest occupied molecular orbital was delocalized along the polymer backbone with the lowest unoccupied molecular orbital localized on the bis(thieno3,2-b]thiophene)diketopyrrolopyrrole units. Bulk heterojunction photovoltaic devices with the fullerene acceptor PC70BM were fabricated and delivered a maximum conversion efficiency of 3.3% under AM1.5G illumination. (C) 2012 Elsevier B.V. All rights reserved.

A study of vertical cloud structure of the Indian summer monsoon using CloudSat data

Precise specification of the vertical distribution of cloud optical properties is important to reduce the uncertainty in quantifying the radiative impacts of clouds. The new global observations of vertical profiles of clouds from the CloudSat mission provide opportunities to describe cloud structures and to improve parameterization of clouds in the weather and climate prediction models. In this study, four years (2007-2010) of observations of vertical structure of clouds from the CloudSat cloud profiling radar have been used to document the mean vertical structure of clouds associated with the Indian summer monsoon (ISM) and its intra-seasonal variability. Active and break monsoon spells associated with the intra-seasonal variability of ISM have been identified by an objective criterion. For the present analysis, we considered CloudSat derived column integrated cloud liquid and ice water, and vertically profiles of cloud liquid and ice water content. Over the South Asian monsoon region, deep convective clouds with large vertical extent (up to 14 km) and large values of cloud water and ice content are observed over the north Bay of Bengal. Deep clouds with large ice water content are also observed over north Arabian Sea and adjoining northwest India, along the west coast of India and the south equatorial Indian Ocean. The active monsoon spells are characterized by enhanced deep convection over the Bay of Bengal, west coast of India and northeast Arabian Sea and suppressed convection over the equatorial Indian Ocean. Over the Bay of Bengal, cloud liquid water content and ice water content is enhanced by similar to 90 and similar to 200 % respectively during the active spells. An interesting feature associated with the active spell is the vertical tilting structure of positive CLWC and CIWC anomalies over the Arabian Sea and the Bay of Bengal, which suggests a pre-conditioning process for the northward propagation of the boreal summer intra-seasonal variability. It is also observed that during the break spells, clouds are not completely suppressed over central India. Instead, clouds with smaller vertical extent (3-5 km) are observed due to the presence of a heat low type of circulation. The present results will be useful for validating the vertical structure of clouds in weather and climate prediction models.

Graphene transistors for CMOS applications: opportunities and challenges

In the last decade, there has been a tremendous interest in Graphene transistors. The greatest advantage for CMOS nanoelectronics applications is the fact that Graphene is compatible with planar CMOS technology and potentially offers excellent short channel properties. Because of the zero bandgap, it will not be possible to turn off the MOSFET efficiently and hence the typical on current to off current ratio (Ion/Ioff) has been less than 10. Several techniques have been proposed to open the bandgap in Graphene. It has been demonstrated, both theoretically and experimentally, that Graphene Nanoribbons (GNR) show a bandgap which is inversely proportional to their width. GNRs with about 20 nm width have bandgaps in the range of 100meV. But it is very difficult to obtain GNRs with well defined edges. An alternate technique to open the band gap is to use bilayer Graphene (BLG), with an asymmetric bias applied in the direction perpendicular to their plane. Another important CMOS metric, the subthreshold slope is also limited by the inability to turn off the transistor. However, these devices could be attractive for RF CMOS applications. But even for analog and RF applications the non-saturating behavior of the drain current can be an issue. Although some studies have reported current saturation, the mechanisms are still not very clear. In this talk we present some of our recent findings, based on simulations and experiments, and propose possible solutions to obtain high on current to off current ratio. A detailed study on high field transport in grapheme transistors, relevant for analog and RF applications will also be presented.

Performance limits of transition metal dichalcogenide (MX2) nanotube surround gate ballistic field effect transistors

We theoretically analyze the performance of transition metal dichalcogenide (MX2) single wall nanotube (SWNT) surround gate MOSFET, in the 10 nm technology node. We consider semiconducting armchair (n, n) SWNT of MoS2, MoSe2, WS2, and WSe2 for our study. The material properties of the nanotubes are evaluated from the density functional theory, and the ballistic device characteristics are obtained by self-consistently solving the Poisson-Schrodinger equation under the non-equilibrium Green's function formalism. Simulated ON currents are in the range of 61-76 mu A for 4.5 nm diameter MX2 tubes, with peak transconductance similar to 175-218 mu S and ON/OFF ratio similar to 0.6 x 10(5)-0.8 x 10(5). The subthreshold slope is similar to 62.22 mV/decade and a nominal drain induced barrier lowering of similar to 12-15 mV/V is observed for the devices. The tungsten dichalcogenide nanotubes offer superior device output characteristics compared to the molybdenum dichalcogenide nanotubes, with WSe2 showing the best performance. Studying SWNT diameters of 2.5-5 nm, it is found that increase in diameter provides smaller carrier effective mass and 4%-6% higher ON currents. Using mean free path calculation to project the quasi-ballistic currents, 62%-75% reduction from ballistic values in drain current in long channel lengths of 100, 200 nm is observed.

Fastest Rapid Loading Methods of Vertical and Radial Consolidations

Fastest curve-fitting procedures are proposed for vertical and radial consolidations for rapid loading methods. In vertical consolidation, the next load increment can be applied at 50-60% consolidation (or even earlier if the compression index is known). In radial consolidation, the next load increment can be applied at just 10-15% consolidation. The effects of secondary consolidation on the coefficient of consolidation and ultimate settlement are minimized in both cases. A quick procedure is proposed in vertical consolidation that determines how far is calculated from the true , where is coefficient of consolidation. In radial consolidation no such procedure is required because at 10-15% the consolidation effects of secondary consolidation are already less in most inorganic soils. The proposed rapid loading methods can be used when the settlement or time of load increment is not known. The characteristic features of vertical, radial, three-dimensional, and secondary consolidations are given in terms of the rate of settlement. A relationship is proposed between the coefficient of the vertical consolidation, load increment ratio, and compression index. (C) 2013 American Society of Civil Engineers.

Optimization of HfO2 films for high transconductance back gated graphene transistors

Hafnium dioxide (HfO2) films, deposited using electron beam evaporation, are optimized for high performance back-gated graphene transistors. Bilayer graphene is identified on HfO2/Si substrate using optical microscope and subsequently confirmed with Raman spectroscopy. Back-gated graphene transistor, with 32 nm thick HfO2 gate dielectric, has been fabricated with very high transconductance value of 60 mu S. From the hysteresis of the current-voltage characteristics, we estimate the trap density in HfO2 to be in the mid 10(11)/cm(2) range, comparable to SiO2.

Horizontal pullout capacity of a group of two vertical plate anchors in clay

The horizontal pullout capacity of a group of two vertical strip plate anchors, placed along the same vertical plane, in a fully cohesive soil has been computed by using the lower bound finite element limit analysis. The effect of spacing between the plate anchors on the magnitude of total group failure load (P-uT) has been evaluated. An increase of soil cohesion with depth has also been incorporated in the analysis. For a weightless medium, the total pullout resistance of the group becomes maximum corresponding to a certain optimum spacing between the anchor plates which has been found to vary generally between 0.5B and B; where B is the width of the anchor plate. As compared to a single plate anchor, the increase in the pullout resistance for a group of two anchors becomes greater at a higher embedment ratio. The effect of soil unit weight has also been analyzed. It is noted that the interference effect on the pullout resistance increases further with an increase in the unit weight of soil mass.

Horizontal pullout resistance of a group of two vertical anchors in sand

The horizontal pullout capacity of a group of two vertical strip anchors placed along the same vertical plane in sand has been determined by using the upper bound finite elements limit analysis. The variation of the efficiency factor (xi (gamma) ) with changes in clear spacing (S) between the anchors has been established to evaluate the total group failure load for different values of (i) embedment ratio (H/B), (ii) soil internal friction angle (phi), and (iii) anchor-soil interface friction angle (delta). The total group failure load, for a given H/B, becomes always maximum corresponding to a certain optimal spacing (S-opt). The value of S-opt/B was found to lie in a range of 0.5-1.4. The maximum magnitude of xi (gamma) increases generally with increases in H/B, phi and delta.

Diketopyrrolopyrrole-Based Conjugated Polymers and Small Molecules for Organic Ambipolar Transistors and Solar Cells

The present highlight discusses major work in the synthesis of low bandgap diketopyrrolopyrrole (DPP)-based polymers with donor-acceptor-donor (D-A-D) approach and their application in organic electronics. It examines the past and recent significant advances which have led to development of low bandgap DPP-based materials with phenyl and thiophene as donors. (c) 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2013, 51, 4241-4260

Vertical electric field stimulated neural cell functionality on porous amorphous carbon electrodes

We demonstrate the efficacy of amorphous macroporous carbon substrates as electrodes to support neuronal cell proliferation and differentiation in electric field mediated culture conditions. The electric field was applied perpendicular to carbon substrate electrode, while growing mouse neuroblastoma (N2a) cells in vitro. The placement of the second electrode outside of the cell culture medium allows the investigation of cell response to electric field without the concurrent complexities of submerged electrodes such as potentially toxic electrode reactions, electro-kinetic flows and charge transfer (electrical current) in the cell medium. The macroporous carbon electrodes are uniquely characterized by a higher specific charge storage capacity (0.2 mC/cm(2)) and low impedance (3.3 k Omega at 1 kHz). The optimal window of electric field stimulation for better cell viability and neurite outgrowth is established. When a uniform or a gradient electric field was applied perpendicular to the amorphous carbon substrate, it was found that the N2a cell viability and neurite length were higher at low electric field strengths (<= 2.5 V/cm) compared to that measured without an applied field (0 V/cm). While the cell viability was assessed by two complementary biochemical assays (MTT and LDH), the differentiation was studied by indirect immunostaining. Overall, the results of the present study unambiguously establish the uniform/gradient vertical electric field based culture protocol to either enhance or to restrict neurite outgrowth respectively at lower or higher field strengths, when neuroblastoma cells are cultured on porous glassy carbon electrodes having a desired combination of electrochemical properties. (C) 2013 Elsevier Ltd. All rights reserved.