Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers

Based on the band-anticrossing model, the effect of the strain-compensated layer and the strain-mediated layer on the band structure, the gain, and the differential gain of GaInNAs-GaAs quantum well lasers have been investigated. Different band-filling mechanisms have been illustrated. Compared to the GaInNAs-GaAs single quantum well with the same wavelength,, the introduction. (if the strain-compensated layer and the strain-mediated layer increases the transparency carrier density. However, these multilayer structures help to suppress the degradation of the differential gain.

Infrared absorption efficiency in AlAs/AlxGa1-xAs type-II multiple-quantum-well structure grown on (211) GaAs substrate

We have made a normal incidence high infrared absorption efficiency AlAs/Al0.55Ga0.45As multiple-quantum-well structure grown on (211) GaAs substrates by molecular beam epitaxy (MBE). A strong infrared absorption signal at 11.6 mu m due to the transition of the ground state to the first excited state, and a small signal at 6.8 mu m due to the transition from the ground state to continuum. were observed. A 45 degrees tilted incidence measurement was also performed on the same sample for the comparison with a normal incidence measurement. Both measurements provide important information about the quantum well absorption efficiency. Efficiencies which evaluate the absorption of electric components perpendicular and parallel to the well plane are eta(perpendicular to) = 25% and eta(parallel to) = 88%, respectively. The total efficiency is then deduced to be eta = 91%. It is apparent that the efficiency eta(parallel to) dominates the total quantum efficiency eta Because an electron in the (211) AlAs well has a small effective mass (m(zx)* or m(zy)*), the normal incidence absorption coefficient is expected to be higher:than that grown on (511) and (311) substrates. Thus, in the present study, we use the (211) substrate to fabricate QWIP. The experimental results indicate the potential of these novel structures for use as normal incidence infrared photodetectors.

A new structure of In-based ohmic contacts to n-type GaAs

Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE-grown n(+)-GaAs film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of Ni(200 Angstrom)/NiIn(100 Angstrom)/Ge(40 Angstrom)/n(+)-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 degrees C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3In. The lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the Transmission Line Method (TLM) was obtained after annealing at 700 degrees C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.

Crystal structure and charge transfer energy of the vaterite-type orthoborate YBO3:Eu

Ligand-to-metal charge transfer energies of YBO3:Eu have been investigated from the chemical bond viewpoint. The chemical bond parameters, such as the covalency, the polarizability of the chemical bond volume, and the presented charge of the ligands in the chemical bond have been quantitatively determined based on the dielectric theory of complex crystal. We calculated the environmental factor (h(e)), which is the major factor influencing the charge transfer energy in the compounds. The calculated results show that the suitable group space of YBO3 is C2/c. The method provides us with a supplementary tool to judge the proper structure when the structure of the crystal has many uncertain space groups.

Vertical structure p-type permeable metal-base organic transistors based on N,N '-diphentyl-N,N '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine

In this article, vertical structure p-type permeable-base organic transistors were proposed and demonstrated. A hole-type organic semiconductor N,N-'-diphentyl-N,N-'-bis(1-naphthylphenyl)-1,1(')-biphenyl-4,4(')-diamine was used as emitter and collector. In the permeable-base transistors, the metal base was formed by firstly coevaporating Al and Ca in vacuum and then annealing at 120 degrees C for 5 min in air, followed by a thin Al deposition. These devices show a common-base current gain of near 1.0 and a common-emitter current gain of similar to 270.

Hydrothermal synthesis, crystal structure and electrochemical properties of a novel 3D Dawson-type polyoxometalate supramolecular network

A novel Dawson-type polyoxometalate supramolecular architecture of the formula [4,4'-H(2)bipy](2.5)center dot[4,4'-Hbipy]center dot[P2W18O62]center dot 6.25H(2)O (4,4'-bipy = 4,4'-bipyridine) has been hydrothermally synthesised and characterised by means of elemental analysis, IR, CV and X-ray single-crystal diffraction. X-ray crystallography indicates that the title compound consists of Dawson-type polyoxoaions [P2W18O62](6-), water molecules and 4,4'-bipy units. The polyoxoanion clusters together with 4,4'-bipy units and water molecules to construct the three-dimensional supramolecular network through hydrogen bonds. The crystal structure analyses reveal that water molecules and 4,4'-bipy units play the important role on the packing arrangements of crystals. Cyclic voltammetry shows that the title compound exhibits three chemically reversible steps

Crystal structure and electrochemical properties of rare earth non-stoichiometric AB(5)-type alloy as negative electrode material in Ni-MH battery

The La0.85MgxNi4.5Co0.35Al0.15 (0.05less than or equal toxless than or equal to0.35) system compounds have been prepared by are melting method under Ar atmosphere. X-ray diffraction (XRD) analysis reveals that the as-prepared alloys have different lattice parameters and cell volumes. The electrochemical properties of these alloys have been studied through the charge-discharge recycle testing at different temperatures and discharge currents. It is found that the La0.85Mg0.25Ni4.5Co0.35Al0.(15) alloy electrode is capable of performing high-rate discharge. Moreover, it has very excellent electrochemical properties as negative electrode materials in Ni-MH battery at low temperature, even at -40degreesC.

Synthesis and structure of alpha-B-Keggin type heteropoly complex K5H[Co-4(VW9O33)(2)]center dot 5H(2)O

A new complex K5H[Co-4(VW9O33)(2)]. 5H(2)O was prepared and its structure was determined by X - ray diffraction analysis. The anion has alpha - beta - Keggin structure. Two (VW9O33)(7-) moieties (alpha - B isomers) are linked via four Co(11)O-6 groups. The single crystal of the title complex is monoclinic P2(1/n) with a = 1.2307(3) nm, b = 2.1250(4) nm, c = 1.5817(3) nm, beta = 91.86(3)degrees, V = 4.1343 (14) nm(3), R = 0.0895, R-w = 0.2180.

Structure-property relationships in Li1-xHxIO3 type complex crystals

Chemical bond parameters and the linear and nonlinear optical (NLO) properties of all constituent chemical bonds in Li1-xHxIOx [x (the amount of hydrogen) = 0.0, 0.28, and 0.34] (LHIO) type complex crystals have been investigated from the chemical bond viewpoint, At the same time, the relationship between the crystal structure and its optical properties has been obtained, based on the calculated results of LiIO3, Li0.72H0.28IO3, and Li0.66H0.34IO3. The nonlinear optical properties of LHIO single crystals are found to be particularly sensitive to the H+ impurity concentration. (C) 1998 Academic Press.

Synthesis, structure and properties of alpha-Keggin-type of K6H3[ZnW11O40Al]center dot 9.5H(2)O

A new heteropolycomplex, K6H3[ZnW11O40Al] . 9.5H(2)O was prepared and characterized by means of elemental analysis, IR, UV spectroscopy, Al-27 NMR, electrochemistry and X-ray crystallography. The crystal of K6H3[ZnW11O40Al] . 9.5H(2)O is cubic, space group Fm-3m, with lattice constants a=b=c=2. 144 8(2) nm, V = 9.866(2) nm(3), Mo radiation, R = 0.057 8 for 497 independent data with [I>2 delta(I)]. The anion is of alpha-type Keggin structure with C-s symmetry.

PREPARATION, CRYSTAL-STRUCTURE, AND VIBRATIONAL-SPECTRA OF PEROVSKITE-TYPE MIXED OXIDES LAM(Y)M'(1-Y)O(3) (M,M'=MN, FE, CO)

Three series of samples LaMnyCo1-yO3+/-lambda, LaFeyMn1-yO3+/-lambda, and LaFeyCo1-yO3+/-lambda (y = 0.0 to 1.0) with Perovskite structure were prepared by an explosion method different from the generally used ceramic techniques. The variation of crystal

AN ALGEBRAIC METHOD TO ESTIMATE GENERAL TYPE OF PHASES OF STRUCTURE FACTORS

The algebraic formulas of 1.5 and 2.5 rank are given for four space groups P2(1), Pn, Pna2(1), P2(1)2(1)2(1). It is better that the results of applying them to estimating general type of phases for four correspondent crystal structures. And a method of transforming algebraic formulas from 1.5(2.5) rank is proposed.

THE ALGEBRAIC-METHOD ESTIMATING +/-PI/2 TYPE OF PHASES OF STRUCTURE FACTORS

The algebraic formulas of 1.5 and 2.5 rank which can be applied to estimating +/- pi/2 type of phases for P2(1)2(1)2(1) space group were derived using the method of structure factor algebra. Both types of the formulas are satisfactory for two known crystal structures in estimating their +/- pi/2 type of phases.