Ultra-long raman laser with a feedback based on the Rayleigh scattering

This paper reports the Rayleigh scattering effects in ultra-long Raman fibre laser. It has been found that in a long fibre cavity (-100 km) the distributed feedback due to Rayleigh back scattering at propagation of light between fibre Bragg grating reflectors may be comparable with the lumped feedback provided by the FBG itself. As a result, Raman lasing in the fibre span limited by lumped (FBG) reflector at one side only appears possible due to significant reflection from the RS-based "random" distributed mirror at the other side. Thus, it concludes that a distributed Rayleigh scattering "random" mirror can form a cavity together with a single FBG spliced to the opposite cavity end.

Multi-wavelength ultra-long Raman fibre laser based on Rayleigh-scattering feedback

We experimentally demonstrate a Raman fiber laser with linear cavity based on point-action fibre Bragg grating reflectors and random distributed feedback via Rayleigh scattering in the long fibre providing stable multiple wavelengths (close to ITU grid) output at Watts level. ©2010 IEEE.

Part 1: Longitudinal static and dynamic effects in semiconductor lasers. Part II: Spectral characteristics of passively mode-locked quantum well lasers

In the first part of this thesis a study of the effect of the longitudinal distribution of optical intensity and electron density on the static and dynamic behavior of semiconductor lasers is performed. A static model for above threshold operation of a single mode laser, consisting of multiple active and passive sections, is developed by calculating the longitudinal optical intensity distribution and electron density distribution in a self-consistent manner. Feedback from an index and gain Bragg grating is included, as well as feedback from discrete reflections at interfaces and facets. Longitudinal spatial holeburning is analyzed by including the dependence of the gain and the refractive index on the electron density. The mechanisms of spatial holeburning in quarter wave shifted DFB lasers are analyzed. A new laser structure with a uniform optical intensity distribution is introduced and an implementation is simulated, resulting in a large reduction of the longitudinal spatial holeburning effect.

A dynamic small-signal model is then developed by including the optical intensity and electron density distribution, as well as the dependence of the grating coupling coefficients on the electron density. Expressions are derived for the intensity and frequency noise spectrum, the spontaneous emission rate into the lasing mode, the linewidth enhancement factor, and the AM and FM modulation response. Different chirp components are identified in the FM response, and a new adiabatic chirp component is discovered. This new adiabatic chirp component is caused by the nonuniform longitudinal distributions, and is found to dominate at low frequencies. Distributed feedback lasers with partial gain coupling are analyzed, and it is shown how the dependence of the grating coupling coefficients on the electron density can result in an enhancement of the differential gain with an associated enhancement in modulation bandwidth and a reduction in chirp.

In the second part, spectral characteristics of passively mode-locked two-section multiple quantum well laser coupled to an external cavity are studied. Broad-band wavelength tuning using an external grating is demonstrated for the first time in passively mode-locked semiconductor lasers. A record tuning range of 26 nm is measured, with pulse widths of typically a few picosecond and time-bandwidth products of more than 10 times the transform limit. It is then demonstrated that these large time-bandwidth products are due to a strong linear upchirp, by performing pulse compression by a factor of 15 to a record pulse widths as low 320 fs.

A model for pulse propagation through a saturable medium with self-phase-modulation, due to the a-parameter, is developed for quantum well material, including the frequency dependence of the gain medium. This model is used to simulate two-section devices coupled to an external cavity. When no self-phase-modulation is present, it is found that the pulses are asymmetric with a sharper rising edge, that the pulse tails have an exponential behavior, and that the transform limit is 0.3. Inclusion of self-phase-modulation results in a linear upchirp imprinted on the pulse after each round-trip. This linear upchirp is due to a combination of self-phase-modulation in a gain section and absorption of the leading edge of the pulse in the saturable absorber.

Effects of pedestal suppression on gain-switched laser sources for 40 Gbit/s OTDM transmission

The performance of 40 Gbit/s optical time-division multiplexed (OTDM) communication systems can be severely limited when the extinction ratio of the optical pulses is low. This is a consequence of the coherent interference noise between individual OTDM channels. When taken alone, the multiple quantum well-distributed feedback laser+dispersion compensating fiber source exhibits a relatively poor extinction ratio which impairs its potential for use in a 40 Gbit/s OTDM system. However, with the addition of an electroabsorption modulator to suppress the pulse pedestals to better than 30 dB extinction, coherent interference noise is reduced, the bit-error-rate performance is greatly improved, and the source shows good potential for 40 Gbit/s OTDM communication.

Wavelength conversion, regeneration and tone manipulation using integrated semiconductor lasers and amplifiers

An integrated semiconductor optical amplifier/distributed feedback (SOA/DFB) laser that show promise as a simple all-optical wavelength conversion device together with useful simultaneous functions such as 2R regeneration and the ability to remove a wavelength identifying tone is presented. Wavelength conversion performance at 20Gb/s and 40Gb/s can be obtained with this laser.

A nano-patterned photonic crystal laser with a dye-doped liquid crystal

Covering a nano-patterned titanium dioxide photonic crystal (PC) within a well-oriented film of dye-doped liquid crystal (LC), a distributed feedback laser is constructed whereby the emission characteristics can be manipulated in-situ using an electric field. This hybrid organic-inorganic structure permits simultaneous selectivity of both the beam pattern and laser wavelength by electrical addressing of the LC director. In addition, laser emission is obtained both in the plane and normal to the PC. Along with experimental data, a theoretical model is presented that is based upon an approximate calculation of the band structure of this birefringent, tuneable laser device. © 2013 AIP Publishing LLC.

A novel butt-joint scheme for the preparation of electro-absorptive lasers

A 1.55 mu m InGaAsP/InGaAsP multiple-quantum-well electro-absorption modulator (EAM) monolithically integrated with a distributed feedback laser (DFB) diode has been realized based on a novel butt-joint scheme by ultra-low metal-organic vapour phase epitaxy for the first time. The threshold current of 25 mA and an extinction ratio of more than 30 dB are obtained by using the novel structure. The beam divergence angles at the horizontal and vertical directions are as small as 19.3 degrees x 13 degrees, respectively, without a spot-size converter by undercutting the InGaAsP active region. The capacitance of the ridge waveguide device with a deep mesa buried by polyimide was reduced down to 0.30 pF.

A 10-GHz bandwidth electroabsorption modulated laser by ultra-low-pressure selective area growth

A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multi-quantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30 mu m). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19 mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.

High-speed photodetector characterization using tunable laser by optical heterodyne technique - art. no. 60200A

An ultra-wide-band frequency response measurement system for optoelectronic devices has been established using the optical heterodyne method utilizing a tunable laser and a wavelenath-fixed distributed feedback laser. By controlling the laser diode cavity length, the beat frequency is swept from DC to hundreds GHz. An outstanding advantage is that this measurement system does not need any high-speed light modulation source and additional calibration. In this measurement, two types of different O/E receivers have been tested. and 3 dB bandwidths measured by this system were 14.4GHz and 40GHz, respectively. The comparisons between experimental data and that from manufacturer show that this method is accurate and easy to carry out.

Coupling coefficients of gratings with graded refractive index waveguides

In this paper, the effective coupling coefficient k(eff) and the self-coupling coefficient zeta(1) are introduced to describe the characteristic of gratings in a resonant situation when the effects of radiation and other partial waves coupling are considered. The dependence of these two coupling coefficients on grating tooth shapes and depths and the dimensions of graded refractive index (GRIN) waveguides is numerically analysed. The results show that the gratings with linear GRIN waveguides have the largest \k(eff)\. The possibility of realizing a complex-coupled DFB laser, even a pure gain or loss coupled DFB laser, employing only a real refractive index coupled grating is also discussed.

超低压选择区域生长法制备产生10GHz重复率超短光脉冲的级联电吸收调制器与分布反馈激光器单片集成光源

采用超低压（22×10^2Pa）选择区域生长（selective area growth，SAG）金属有机化学气相沉积（metal—organic chemical vapor deposition，MOCVD）技术成功制备了InGaAsP／InGaAsP级联电吸收调制器（electroabsorption modulator，EAM）与分布反馈激光器（distributed feedback laser，DFB）单片集成光源的新型光电器件．实验结果表明，采用该技术制备的器件具有良好的性能

A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth

A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multiquantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30μm). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10 GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.

Analytical expressions for the FM and AM responses of an integrated laser-modulator

The need for low-chirp and compact transmitters for high-bit-rate optical links has led to the development of integrated laser electroabsorption modulators (ILM). We have investigated feedback effects inducing frequency chirp by developing a model treating the ILM as a whole and obtained analytical expressions of the FM and AM responses. The variation of the frequency chirp with the residual facet reflectivity of the modulator section is calculated. The model predicts the unusual peak in the measured frequency responses and has been used to define design rules.

Pulse tail suppression in laser diode output by tunable notch filter

Efficient suppression of relaxation oscillations in the output signal from an overdriven gain-switched laser diode was demonstrated. Several quantum-well distributed feedback laser diodes from different manufacturers were used for experimental analysis. A five-fold increase in the peak power was achieved for the tail-free operation. It was found that spectral filtering removed the nonlinearly chirped components resulting in pulse shortening by a factor of three.

Phase shift keyed systems based on a gain switched laser transmitter

Return-to-Zero (RZ) and Non-Return-to-Zero (NRZ) Differential Phase Shift Keyed (DPSK) systems require cheap and optimal transmitters for widespread implementation. The authors report on a gain switched Discrete Mode (DM) laser that can be employed as a cost efficient transmitter in a 10.7 Gb/s RZ DPSK system and compare its performance to that of a gain switched Distributed Feed-Back (DFB) laser. Experimental results show that the gain switched DM laser readily provides error free performance and a receiver sensitivity of -33.1 dBm in the 10.7 Gbit/s RZ DPSK system. The standard DFB laser on the other hand displays an error floor at 10(-1) in the same RZ DPSK system. The difference in performance, between the two types of gain switched transmitters, is analysed by investigating their linewidths. We also demonstrate, for the first time, the generation of a highly coherent gain switched pulse train which displays a spectral comb of approximately 13 sidebands spaced by the 10.7 GHz modulation frequency. The filtered side-bands are then employed as narrow linewidth Continuous Wave (CW) sources in a 10.7 Gb/s NRZ DPSK system.