Irradiance and spectral quality affect Asian tropical rain forest tree seedling development

Iridescent blue leaf coloration in four Malaysian rain forest understory plants, Diplazium tomentosum Bl. (Athyriaceae), Lindsaea lucida Bi. (Lindsaeaceae), Begonia pavonina Ridl. (Begoniaceae), and Phyllagathis rotundifolia Bl. (Melastoma- taceae) is caused by a physical effect, constructive interference of reflected blue light. The ultrastructural basis for this in D. tomentosum and L. lucida is multiple layers of cellulose microfibrils in the uppermost cell walls of the adaxial epidermis. The helicoidal arrangement of these fibrils is analogous to that which produces a similar color in arthropods. In B. pavonina and P. rotundifolia the blue-green coloration is caused by parallel lamellae in specialized plastids adjacent to the abaxial wall of the adaxial epidermis. The selective advantage of this color production, if any, is unknown.

Why Leaves Turn Red in Autumn. The Role of Anthocyanins in Senescing Leaves of Red-Osier Dogwood

Why the leaves of many woody species accumulate anthocyanins prior to being shed has long puzzled biologists because it is unclear what effects anthocyanins may have on leaf function. Here, we provide evidence for red-osier dogwood (Cornus stolonifera) that anthocyanins form a pigment layer in the palisade mesophyll layer that decreases light capture by chloroplasts. Measurements of leaf absorbance demonstrated that red-senescing leaves absorbed more light of blue-green to orange wavelengths (495–644 nm) compared with yellow-senescing leaves. Using chlorophyll a fluorescence measurements, we observed that maximum photosystem II (PSII) photon yield of red-senescing leaves recovered from a high-light stress treatment, whereas yellow-senescing leaves failed to recover after 6 h of dark adaptation, which suggests photo-oxidative damage. Because no differences were observed in light response curves of effective PSII photon yield for red- and yellow-senescing leaves, differences between red- and yellow-senescing cannot be explained by differences in the capacities for photochemical and non-photochemical light energy dissipation. A role of anthocyanins as screening pigments was explored further by measuring the responses PSII photon yield to blue light, which is preferentially absorbed by anthocyanins, versus red light, which is poorly absorbed. We found that dark-adapted PSII photon yield of red-senescing leaves recovered rapidly following illumination with blue light. However, red light induced a similar, prolonged decrease in PSII photon yield in both red- and yellow-senescing leaves. We suggest that optical masking of chlorophyll by anthocyanins reduces risk of photo-oxidative damage to leaf cells as they senesce, which otherwise may lower the efficiency of nutrient retrieval from senescing autumn leaves.

MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications

The study of III-nitride materials (InN, GaN and AlN) gained huge research momentum after breakthroughs in the production light emitting diodes (LEDs) and laser diodes (LDs) over the past two decades. Last year, the Nobel Prize in Physics was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura for inventing a new energy efficient and environmental friendly light source: blue light-emitting diode (LED) from III-nitride semiconductors in the early 1990s. Nowadays, III-nitride materials not only play an increasingly important role in the lighting technology, but also become prospective candidates in other areas, for example, the high frequency (RF) high electron mobility transistor (HEMT) and photovoltaics. These devices require the growth of high quality III-nitride films, which can be prepared using metal organic vapour phase epitaxy (MOVPE). The main aim of my thesis is to study and develop the growth of III-nitride films, including AlN, u-AlGaN, Si-doped AlGaN, and InAlN, serving as sample wafers for fabrication of ultraviolet (UV) LEDs, in order to replace the conventional bulky, expensive and environmentally harmful mercury lamp as new UV light sources. For application to UV LEDs, reducing the threading dislocation density (TDD) in AlN epilayers on sapphire substrates is a key parameter for achieving high-efficiency AlGaNbased UV emitters. In Chapter 4, after careful and systematic optimisation， a working set of conditions, the screw and edge type dislocation density in the AlN were reduced to around 2.2×108 cm-2 and 1.3×109 cm-2 , respectively, using an optimized three-step process, as estimated by TEM. An atomically smooth surface with an RMS roughness of around 0.3 nm achieved over 5×5 µm 2 AFM scale. Furthermore, the motion of the steps in a one dimension model has been proposed to describe surface morphology evolution, especially the step bunching feature found under non-optimal conditions. In Chapter 5, control of alloy composition and the maintenance of compositional uniformity across a growing epilayer surface were demonstrated for the development of u-AlGaN epilayers. Optimized conditions (i.e. a high growth temperature of 1245 °C) produced uniform and smooth film with a low RMS roughness of around 2 nm achieved in 20×20 µm 2 AFM scan. The dopant that is most commonly used to obtain n-type conductivity in AlxGa1-xN is Si. However, the incorporation of Si has been found to increase the strain relaxation and promote unintentional incorporation of other impurities (O and C) during Si-doped AlGaN growth. In Chapter 6, reducing edge-type TDs is observed to be an effective appoach to improve the electric and optical properties of Si-doped AlGaN epilayers. In addition, the maximum electron concentration of 1.3×1019 cm-3 and 6.4×1018 cm-3 were achieved in Si-doped Al0.48Ga0.52N and Al0.6Ga0.4N epilayers as measured using Hall effect. Finally, in Chapter 7, studies on the growth of InAlN/AlGaN multiple quantum well (MQW) structures were performed, and exposing InAlN QW to a higher temperature during the ramp to the growth temperature of AlGaN barrier (around 1100 °C) will suffer a significant indium (In) desorption. To overcome this issue, quasi-two-tempeature (Q2T) technique was applied to protect InAlN QW. After optimization, an intense UV emission from MQWs has been observed in the UV spectral range from 320 to 350 nm measured by room temperature photoluminescence.

Synergistischer photoinduzierter Schadstoffabbau mittels eines Porphyrazin-Titandioxid-Hybrids

Die zunehmende Luftverschmutzung aufgrund des steigenden Energiebedarfs und Mobilitätsanspruchs der Bevölkerung, insbesondere in urbanen Gebieten, erhöht das Gefährdungspotential für die Gesundheit und verschlechtert so die Lebensqualität. Neben der Vermeidung von Emissionen toxischer Gase als mittel- und langfristig optimale Maßnahme zur Verbesserung der Luftqualität, stellt der Abbau emittierter Luftschadstoffe ein geeignetes und kurzfristig wirksames Mittel dar. Ein solcher Abbau kann durch Photokatalyse erzielt werden, allerdings nutzen Photokatalysatoren, die auf dem Halbleiter Titandioxid (TiO2) basieren, das solare Emissionsspektrum nur geringfüfig aus und sind in Innenräumen und anderen UV-schwachen Bereichen nicht wirksam. Um diese Nachteile zu überwinden, wurde ein Photokatalysator entwickelt und hergestellt, der aus TiO2 (P25) als UV-aktiver Photokatalysator und als Trägermaterial sowie einem seinerseits im Vis-Bereich photoaktiven Porphyrazin-Farbstoff als Beschichtung besteht. Die sterisch anspruchsvollen und in der Peripherie mit acht Bindungsmotiven für TiO2 versehenen Farbstoffmoleküle wurden zu diesem Zweck auf der Halbleiteroberfläche immobilisiert. Die so gebildeten Porphyrazin-Titandioxid-Hybride wurde ausführlich charakterisiert. Dabei wurden unter anderem die Bindung der Farbstoffe auf der Titandioxidoberfläche mittels Adsorptionsisothermen und die UV/Vis-spektroskopischen Eigenschaften des Hybridmaterials untersucht. Zur Bestimmung der photokatalytischen Aktivitäten der Einzelkomponenten und des Hybridmaterials wurden diese auf die Fähigkeit zur Bildung von Singulett-Sauerstoff, Wasserstoffperoxid und Hydroxylradikalen hin sowie in einem an die ISO-22197-1 angelehnten Verfahren auf die Fähigkeit zum Abbau von NO hin jeweils bei Bestrahlung in drei Wellenlängenbereichen (UV-Strahlung, blaues Licht und rotes Licht) geprüft. Darüber hinaus konnte die Aktivität des Hybridmaterials bei der Photodynamischen Inaktivierung (PDI) von Bakterien unter UV- und Rotlichtbestrahlung im Vergleich zum reinen Ttandioxid bestimmt werden. Die Charakterisierung des Hybridmaterials ergab, dass die Farbstoffmoleküle in einer neutralen Suspension nahezu irreversibel in einer monomolekularen Schicht mit einer Bindungsenergie von -41.43 kJ/mol an die Oberfläche gebunden sind und das Hybridmaterial mit hohen Extinktionskoeffizienten von bis zu 105 M-1cm-1 in großen Bereichen des UV/Vis-Spektrums Photonen absorbiert. Das Spektrum des Hybridmaterials setzt sich dabei additiv aus den beiden Einzelspektren zusammen. Die Auswirkungen der Charakterisierungsergebnisse auf die Bildung reaktiver Sauerstoffspezies wurden ausführlich diskutiert. Der Vergleich der Aktivitäten in Bezug auf die Bildung der reaktiven Sauerstoffspezies zeigte, dass die Aktivität des Hybridmaterials bis auf die bei der Bildung von Hydroxylradikalen unter UV-Bestrahlung in allen Versuchen deutlich höher war als die Aktivität des reinen Titandioxids. Im Gegensatz zu reinem Titandioxid erzeugte das Hybridmaterial in allen untersuchten Wellenlängenbereichen Mengen an Singulett-Sauerstoff, die photophysikalisch eindeutig detektierbar waren. Zur Erklärung und Deutung dieser Beobachtungen wurde eine differenzierte Diskussion geführt, die die Ergebnisse der Hybridpartikelcharakterisierung aufgreift und implementiert. Der Vergleich der NO-Abbaueffizienzen ergab bei allen Experimenten durchgängig deutlich höhere Werte für das Hybridmaterial. Zudem wurden durch das Hybridmaterial nachgewiesenermaßen wesentlich geringere Mengen des unerwünschten Nebenprodukts des Abbaus (NO2) gebildet. Im Zuge der Diskussion wurden verschiedene mögliche Mechanismen der „sauberen“ Oxidation zu Nitrat durch das Hybridmaterial vorgestellt. Untersuchungen zur Photodynamischen Inaktivierung verschiedener Bakterien ergaben, dass das Hybridmaterial neben einer zu P25 ähnlichen Aktivität unter UV-Bestrahlung, anders als P25, auch eine PDI verschiedener Bakterien unter Rotlichtbestrahlung erreicht.

Assessing Potential Laser Strike Protection Engineering Control for United States Coast Guard Aircraft

Thesis (Master's)--University of Washington, 2016-06

Pyridine-incorporated dihexylquaterthiophene : a novel blue emitter for organic light emitting diodes (OLEDs)

The synthesis and characterisation of 2,5-bis(5′-hexyl-[2,2′- bithiophen]-5-yl)pyridine (Th4PY) and its use as a blue emitter in organic light emitting diodes (OLEDs) is reported. Th4PY was synthesised in high yield using a straightforward Suzuki coupling route with commercially available starting materials. As Th4PY is both soluble and has low molecular weight, blue OLEDs were fabricated using both spin-coating and vacuum deposition thin film processing techniques to study the effect of processing on device performance. OLED devices using a spin-coated layer consisting of 4′,4′′- tris(N-carbazolyl)triphenylamine (TCTA) and 2-(4-biphenylyl)-5-(4-tert- butylphenyl)-1,3,4-oxadiazole (PBD) as a host matrix together with Th4PY as emitter exhibited highly efficient sky-blue emission with a low turn-on voltage of 3V, a maximum brightness close to 15000cdm-2 at 8V, and a maximum luminous efficiency of 7.4cdA -1 (6.3lmW -1) with CIE coordinates of x≤0.212, y≤0.320. The device performance characteristics are compared using various matrices and processing techniques. The promising sky-blue OLED performance, solution processability, and ambient stability make Th4PY a promising blue emitter for application in OLEDs.

Fluoranthene-Based Molecules as Electron Transport and Blue Fluorescent Materials for Organic Light-Emitting Diodes

Herein we report the synthesis, characterization, and potential application of his (4- (7,9,10-triphenylfluoranthen-8-yl)pheny)sulfone (TPFDPSO2) and 2,8-bis (7,9,10-triphenylfluoranthen-8-yl) dibenzo b, d]-thiophene 5,5-dioxide (TPFDBTO2) as electron transport as well as light-emitting materials. These fluoranthene derivatives were synthesized by oxidation of their corresponding parent sulfide compounds, which were prepared via Diels-Alder reaction. These materials exhibit deep blue fluorescence emission in both solution and thin film, high photoluminescence quantum yield (PLQY), thermal and electrochemical stability over a wide potential range. Hole- and electron-only devices were fabricated to study the charge transport characteristics, and predominant electron transport property comparable with that of a well-known electron transport material, Alq(3), was observed. Furthermore, bilayer electroluminescent devices were fabricated utilizing these fluoranthene derivatives as electron transport as well as emitting layer, and device performance was compared with that of their parent sulfide molecules. The electroluminescence (EL) devices fabricated with these molecules displayed bright sky blue color emission and 5-fold improvement in external quantum efficiency (EQE) with respect to their parent compounds.

Fluoranthene derivatives as blue fluorescent materials for non-doped organic light-emitting diodes

In this study, we report synthesis of symmetrically and non-symmetrically functionalized fluoranthene-based blue fluorescent molecular materials for non-doped electroluminescent devices. The solid state structure of these fluorophores has been established by single crystal X-ray diffraction analysis. Furthermore, a detailed experimental and theoretical study has been performed to understand the effect of substitution of symmetric and non-symmetric functional groups on optical, thermal and electrochemical properties of fluoranthene. These materials exhibit a deep blue emission and high PLQY in solution and solid state. The vacuum deposited, non-doped electroluminescent devices with the device structure ITO/NPD (15 nm)/CBP (15 nm)/EML (40 nm)/TPBI (30 nm)/LiF (1 nm)/Al were fabricated and characterized. A systematic shift in the peak position of EL emission was observed from sky blue to bluish-green with EL maxima from 477 nm to 490 nm due to different functional groups on the periphery of fluoranthene. In addition, a high luminance of >= 2000 cd m(-2) and encouraging external quantum efficiency (EQE) of 1.1-1.4% were achieved. A correlation of the molecular structure with device performance has been established.

Synthesis, spectroscopic and thermal properties of nickel (II)-azo complexes with blue-violet light wavelength

A novel azo dye containing isoxazole ring and beta-diketone derivative (TIAD) and its two nickel (II) complexes (Ni (II)-ETIAD and Ni (II)-HTIAD) were synthesized in order to obtain a blue-violet light absorption and better thermal stability as a promising organic storage material for next generation of high density digital versatile disc-recordable (HD-DVD-R) systems that uses a high numerical aperture of 0.85 at 405 nm wavelength. Their structures were confirmed on the basis of elemental analysis, MS, FT-IR, UV-Vis and magnetic data. Their solubility in 2,2,3,3-tetrafluoro-1-propanol (TFP) and absorption properties of thin film were measured. The difference of absorption maximum from the complexes to their ligands was discussed. In addition, the TG analysis of the complexes was also determined, and their thermal stability was evaluated. (C) 2004 Elsevier Ltd. All rights reserved.

Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

We report on the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZnO bulk substrate. The p-type ZnO epilayer was formed by nitrogen incorporation using N2O gas as oxidizing and doping sources. Distinct electroluminescence (EL) emissions in the blue and yellow regions were observed at room temperature by the naked eye under forward bias. The EL peak energy coincided with the photoluminescence peak energy of the ZnO epilayer, suggesting that the EL emissions emerge from the ZnO epilayer. In addition, the current-voltage and light output-voltage characteristics of ZnO homojunction LEDs have also been studied. (c) 2006 American Institute of Physics.