Marine fish assemblages associated with fish aggregating devices (FADs): effects of fish removal, FAD size, fouling communities, and prior recruits

Fishes are widely known to aggregate around floating objects, including flotsam and fish aggregating devices (FADs).The numbers and diversity of juvenile fishes that associated with floating objects in the nearshore waters of the eastern tropical Pacific were recording by using FADs as an experimental tool. The effects of fish removal, FAD size, and the presence or absence of a fouling community at the FAD over a period of days, and the presence of prior recruits over a period of hours were evaluated by using a series of experiments. The removal of FAD-associated fish assemblages had a significant effect on the number of the dominant species (Abudefduf troschelii) in the following day’s assemblage compared to FADs where the previous day’s assemblage was undisturbed; there was no experimental effect on combined species totals. Fishes do, however, discriminate among floating objects, forming larger, more species-rich assemblages around large FADs compared to small ones. Fishes also formed larger assemblages around FADs possessing a fouling biota versus FADs without a fouling biota, although this effect was also closely tied to temporal factors. FADs enriched with fish accumulated additional recruits more quickly than FADs that were not enriched with fish and therefore the presence of prior recruits had a strong, positive effect on subsequent recruitment. These results suggest that fish recruitment to floating objects is deliberate rather than haphazard or accidental and they sup-port the hypothesis that flotsam plays a role in the interrelationship between environment and some juvenile fishes. These results are relevant to the use of FADs for fisheries, but emphasize that further research is necessary for applied interests.

Comment on 'processing and microstructure of single grain uranium-doped Y-Ba-Cu-O superconductor'

We comment on the paper by N Hari Babu et al. (2002 Supercond. Sci. Technol. 15 104-10) and point out misinterpretations of the chemical composition of U-bearing deposits observed in Y123. The observed small deposits are those of new compounds which do not contain Cu, rather than refined Y211 plus U, as stated by the authors. We further note that extensive literature, not quoted, is in disagreement by nearly an order of magnitude concerning the values of Pt and U doping at which the optimum value of Jc is obtained. Other related information, presently in the literature, which may be helpful to those working with this high temperature superconducting chemical system, is presented.

Development of the microstructure of uranium-doped Nd-Ba-Cu-O

Melt grown Nd-Ba-Cu-O (NdBCO) has been reported to exhibit higher values of critical current density, Jc and irreversibility field, Hirr, than other (RE)BCO superconductors, such as YBCO. The microstructure of NdBCO typically contains 5-10 μm sized inclusions of the Nd4Ba2Cu2O10 phase (Nd-422) in a superconducting NdBa2Cu3O7-δ phase (Nd-123) matrix. The average size of these inclusions is characteristically larger than that of the Y2BaCuO5 (Y-211) inclusions in YBCO. As a result, there is scope to further refine the Nd-422 size to enhance Jc in NdBCO. Large grain samples of NdBCO superconductor doped with various amounts of depleted UO2 and containing excess Nd-422 have been fabricated by top seeded melt growth under reduced oxygen partial pressure. The effect of the addition of depleted UO2 on the NdBCO microstructure has been studied systematically in samples with and without added CeO2. It is observed that the addition of UO2 refines the NdBCO microstructure via the formation of uranium-containing phase particles in the superconducting matrix. These particles are of approximately spherical geometry with dimensions of around 1 μm. The average size of the nonsuperconducting phase particles in the uranium-doped microstructure is an order of magnitude less than their size in un-doped Nd-123 prepared with excess Nd-422. The critical current density of uranium-doped NdBCO is observed to increase significantly compared to the undoped material.

Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors

Thin film transistors (TFTs) utilizing an hydrogenated amorphous silicon (a-Si:H) channel layer exhibit a shift in the threshold voltage with time under the application of a gate bias voltage due to the creation of metastable defects. These defects are removed by annealing the device with zero gate bias applied. The defect removal process can be characterized by a thermalization energy which is, in turn, dependent upon an attempt-to-escape frequency for defect removal. The threshold voltage of both hydrogenated and deuterated amorphous silicon (a-Si:D) TFTs has been measured as a function of annealing time and temperature. Using a molecular dynamics simulation of hydrogen and deuterium in a silicon network in the H2 * configuration, it is shown that the experimental results are consistent with an attempt-to-escape frequency of (4.4 ± 0.3) × 1013 Hz and (5.7 ± 0.3) × 1013 Hz for a-Si:H and a-Si:D respectively which is attributed to the oscillation of the Si-H and Si-D bonds. Using this approach, it becomes possible to describe defect removal in hydrogenated and deuterated material by the thermalization energies of (1.552 ± 0.003) eV and (1.559 ± 0.003) eV respectively. This correlates with the energy per atom of the Si-H and Si-D bonds. © 2006 Elsevier B.V. All rights reserved.