896 resultados para Unique factorisation Rings


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Fabrication of semiconductor nanostructures such as quantum dots (QDs), quantum rings (QRs) has been considered as the important step for realization of solid state quantum information devices, including QDs single photon emission source, QRs single electron memory unit, etc. To fabricate GaAs quantum rings, we use Molecular Beam Epitaxy (MBE) droplet technique in this report. In this droplet technique, Gallium (Ga) molecular beams are supplied initially without Arsenic (As) ambience, forming droplet-like nano-clusters of Ga atoms on the substrate, then the Arsenic beams are supplied to crystallize the Ga droplets into GaAs crystals. Because the morphologies and dimensions of the GaAs crystal are governed by the interplay between the surface migration of Ga and As adatoms and their crystallization, the shape of the GaAs crystals can be modified into rings, and the size and density can be controlled by varying the growth temperatures and As/Ga flux beam equivalent pressures(BEPs). It has been shown by Atomic force microscope (AFM) measurements that GaAs single rings, concentric double rings and coupled double rings are grown successfully at typical growth temperatures of 200 C to 300 C under As flux (BEP) of about 1.0 x 10(-6) Torr. The diameter of GaAs rings is about 30-50 nm and thickness several nm.

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We report on a magnetophotoluminescence study of single self-assembled semiconductor nanorings which are fabricated by molecular-beam epitaxy combined with AsBr3 in situ etching. Oscillations in the neutral exciton radiative recombination energy and in the emission intensity are observed under an applied magnetic field. Further, we control the period of the oscillations with a gate potential that modifies the exciton confinement. We infer from the experimental results, combined with calculations, that the exciton Aharonov-Bohm effect may account for the observed effects.

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The energy spectrum and the persistent currents are calculated for finite-width mesoscopic annular structures with radial potential barrier in the presence of a magnetic field. The introduction of the tunneling barrier leads to the creation of extra edge states around the barrier and the occurrence of oscillatory structures superimposed on the bulk Landau level plateaus in the energy spectrum. We found that the Fermi energy E-F increases with the number of electrons N emerging many kinks. The single eigenstate persistent current exhibits complicated structures with vortex-like texture, ''bifurcation'', and multiple ''furcation'' patterns as N is increased. The total currents versus N display wild fluctuations.

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The magnet design, fabrication, and measurement of HIRFL-CSR (Heavy Ion Research Facility in Lanzhou Cooling Storage Ring) are presented. All magnets will be laminated And welded with an armor-coated surface between two big endplates made of sticking glue 0.5 mm-thick sheets. The dipole of CSRm was chosen an H type with an air circle on the pole to improve the field uniformity. The dipole of CSRe was chosen the C type with an air circle and two air slots on the pole to improve the field homogeneity. Its reproducibility of magnet to magnet was adjusted with inserting small laminating pieces before demountable pole ends to reach less than +/- 2 x 10(-4) at optimized field level. CSRm quadrupoles diameter is 170 mm and has two different lengths, and its endplates were made with punching pieces after coating with epoxy glue, there is chamfered directly on the pole ends to reduce 12th-order contribution of field and without the demountable pole ends. CSRe main quadrupoles diameter is 240 mm and has two different lengths, and its endplates were also made with punching pieces coated with epoxy glue, there is also chamfered directly on the pole ends to reduce 12th-order contribution of field like CSRm.