Thin-walled timber and FRP-timber veneer composite CEE-sections

This paper compares the structural performance between thin-walled timber and FRP-timber composite Cee-sections. While, thin-walled composite timber structures have been proven to be efficient and ultra-light structural elements, their manufacturing is difficult and labour intensive. Significant effort and time is required to prevent the cracking of the transverse timber veneers, bent in the grain direction, when forming the cross-sectional shape. FRP-timber structures overcome this disadvantage by replacing the transverse veneers with flexible, unidirectional FRP material and only keeping the timber veneers which are bent in their natural rolling direction. The Cee-sections investigated in this study were 210 mm deep × 90 mm wide × 500 mm high and manufactured from five plies. For both section types, the three internal plies were thin (1 mm thick) softwood Hoop pine (Araucaria cunninghamii) veneers, orientated along the section longitudinal axis. The two outer layers, providing bending stiffness to the walls, were Hoop pine veneers (1 mm thick) for the timber sections and glass fibre reinforced plastic (0.73 mm thick) for the FRP-timber sections orientated perpendicular to the inner layers. The manufacturing process is briefly introduced in this paper. The profiles were fitted with strain gauges and tested in compression. Linear Variable Displacement Transducers also recorded the buckling along one flange. The test results are presented and discussed in this paper in regards to their structural behaviour and performance. Results showed that the use of FRP in the sections increases both the elastic local buckling load and section capacity, the latter being increased by about 24 percent. The results indicate that thin-walled FRP-timber can ultimately be used as a sustainable alternative to cold-formed steel profiles.

Vibration of Non-Uniform Thin-Walled Beams of Arbitrary Shape

A generalised theory for the natural vibration of non-uniform thin-walled beams of arbitrary cross-sectional geometry is proposed. The governing equations are obtained as four partial, linear integro-differential equations. The corresponding boundary conditions are also obtained in an integro-differential form. The formulation takes into account the effect of longitudinal inertia and shear flexibility. A method of solution is presented. Some numerical illustrations and an exact solution are included.

Thin nanoporous metal-insulator-metal membranes

Insulating nanoporous materials are promising platforms for soft-ionizing membranes; however, improvement in fabrication processes and the quality and high breakdown resistance of the thin insulator layers are needed for high integration and performance. Here, scalable fabrication of highly porous, thin, silicon dioxide membranes with controlled thickness is demonstrated using plasma-enhanced chemical-vapor-deposition. The fabricated membranes exhibit good insulating properties with a breakdown voltage of 1 × 107 V/cm. Our calculations suggest that the average electric field inside a nanopore of the membranes can be as high as 1 × 106 V/cm; sufficient for ionization of wide range of molecules. These metal–insulator–metal nanoporous arrays are promising for applications such soft ionizing membranes for mass spectroscopy.

Ellipsometric study of Atomic Layer Deposited TiO2 thin films

Atomic layer deposition was used to obtain TiO2 thin films on Si (100) and fused quartz, using a novel metal organic precursor. The films were grown at 400 degrees C, varying the amount of oxygen used as the reactive gas. X-ray diffraction showed the films to be crystalline, with a mixture of anatase and rutile phases. To investigate their optical properties, ellipsometric measurements were made in the UV-Vis-NIR range (300-1700 nm). Spectral distribution of various optical constants like refractive index (n), absorption index (k), transmittance (T), reflectance (R), absorption (A) were calculated by employing Bruggemann's effective medium approximation (BEMA) and Maxwell-Garnet effective medium approximation, in conjunction with the Cauchy and Forouhi-Bloomer (FB) dispersion relations. A layered optical model has been proposed which gives the thickness, elemental and molecular composition, amorphicity and roughness (morphology) of the TiO2 film surface and and the film/substrate interface, as a function of oxygen flow rate The spectral distribution of the optical band gap (E-g(opt)), complex dielectric constants (epsilon' and epsilon''), and optical conductivity (sigma(opt)), has also been determined.

New eight node serendipity quadrilateral plate bending element for thin and moderately thick plates using Integrated Force Method

A new 8-node serendipity quadrilateral plate bending element (MQP8) based on the Mindlin-Reissner theory for the analysis of thin and moderately thick plate bending problems using Integrated Force Method is presented in this paper. The performance of this new element (MQP8) is studied for accuracy and convergence by analyzing many standard benchmark plate bending problems. This new element MQP8 performs excellent in both thin and moderately thick plate bending situations. And also this element is free from spurious/zero energy modes and free from shear locking problem.

Microstructural evolution of tungsten oxide thin films

Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, thin films annealed above 400 degrees C were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a ``instability wheel'' model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

LbL Fabricated Poly(Styrene Sulfonate)/TiO2 Multilayer Thin Films for Environmental Applications

Fabrication of multilayer ultrathin composite films composed of nanosized titanium dioxide particles (P25, Degussa) and polyelectrolytes (PELs), such as poly(allyl amine hydrochloride) (PAH) and poly(styrene sulfonate sodium salt) (PSS), on glass substrates using the layer-by-layer (LbL) assembly technique and its potentia application for the photodegradation of rhodamine B under ultraviolet (UV) irradiation has been reported. The polyelectrolytes and TiO2 were deposited on glass substrates at pH 2.5 and the growth of the multilayers was studied using UV/vis speccrophotometer. Thicknes measurements of the films showed a linear increase in film thickness with increase in number of bilayers. The surface microstructure of the thin films was characterized by field emission scanning electron microscope. The ability of the catalysts immobilized by this technique was compared with TiO2 films prepared by drop casting and spin coating methods. Comparison has been made in terms of film stability and photodegradation of rhodamine B. Process variables such as the effect of surface area of the multilayers, umber of bilayers, and initial dye concentration on photodegradation of rhodamine B were studied. Degradation efficiency increased with increase in number of catalysts (total surface area) and bilayers. Kinetics analysis indicated that the photodegradation rates follow first order kinetics. Under maximum loading of TiO2, with five catalyst slides having 20 bilayers of polyelectrolyte/TiO2 on each, 100 mL of 10 mg/L dye solution could be degraded completely in 4 h. The same slides could be reused with the same efficiency for several cycles. This study demonstrates that nanoparticles can be used in wastewater treatment using a simple immobilization technique. This makes the process an attractive option for scale up.

RF Sputtered Er2O3 Thin Films as High-k Gate Dielectrics for Germanium MOS Devices

We report the material and electrical properties of Erbium Oxide (Er2O3) thin films grown on n-Ge (100) by RF sputtering. The properties of the films are correlated with the processing conditions. The structural characterization reveals that the films annealed at 550 degrees C, has densified as compared to the as-grown ones. Fixed oxide charges and interface charges, both of the order of 10(13)/cm(2) is observed.

A numerical study of projectile impact on thin aluminium plates

This article deals with a simulation-based Study of the impact of projectiles on thin aluminium plates using LS-DYNA by modelling plates with shell elements and projectiles with solid elements. In order to establish the required modelling criterion in terms of element size for aluminium plates, a convergence Study of residual velocity has been carried Out by varying mesh density in the impact zone. Using the preferred material and meshing criteria arrived at here, extremely good prediction of test residual velocities and ballistic limits given by Gupta et al. (2001) for thin aluminium plates has been obtained. The simulation-based pattern of failure with localized bulging and jagged edge of perforation is similar to the perforation with petalling seen in tests. A number Of simulation-based parametric studies have been carried out and results consistent with published test data have been obtained. Despite the robust correlation achieved against published experimental results, it would be prudent to conduct one's own experiments, for a final correlation via the present modelling procedure and analysis with the explicit LS-DYNTA 970 solver. Hence, a sophisticated ballistic impact testing facility and a high-speed camera have been used to conduct additional tests on grade 1100 aluminium plates of 1 mm thickness with projectiles Of four different nose shapes. Finally, using the developed numerical simulation procedure, an excellent correlation of residual velocity and failure modes with the corresponding test results has been obtained.

Slow pressure modes in thin accretion discs

Thin accretion discs around massive compact objects can support slow pressure modes of oscillations in the linear regime that have azimuthal wavenumber m = 1. We consider finite, flat discs composed of barotropic fluid for various surface density profiles and demonstrate through WKB analysis and numerical solution of the eigenvalue problem - that these modes are stable and have spatial scales comparable to the size of the disc. We show that the eigenvalue equation can be mapped to a Schrodinger like equation. The analysis of this equation shows that all eigenmodes have discrete spectra. We find that all the models we have considered support negative frequency eigenmodes; however, the positive eigenfrequency modes are only present in power-law discs, albeit for physically uninteresting values of the power-law index beta and barotropic index gamma.

Time Domain Characteristics of Electrical Measures for a Piezoelectric Thin Film to Identify Defects in the Substrate

A reduced 3D continuum model of dynamic piezoelectricity in a thin-film surface-bonded to the substrate/host is presented in this article. While employing large area flexible thin piezoelectric films for novel applications in device/diagnostics, the feasibility of the proposed model in sensing the surface and/or sub-surface defects is demonstrated through simulations - which involve metallic beams with cracks and composite beam with delaminations of various sizes. We have introduced a set of electrical measures to capture the severity of the damage in the existing structures. Characteristics of these electrical measures in terms of the potential difference and its spatial gradients are illustrated in the time domain. Sensitivity studies of the proposed measures in terms of the defected areas and their region of occurence relative to the sensing film are reported. The simulations' results for electrical measures for damaged hosts/substrates are compared with those due to undamaged hosts/substrates, which show monotonicity with high degree of sensitivity to variations in the damage parameters.

Kinetics and mechanism of hot corrosion of γ-Y 2Si 2O 7 in thin-film Na 2SO 4 molten salt

γ-Y 2Si 2O 7 is a promising candidate material both for hightemperature structural applications and as an environmental/thermal barrier coating material due to its unique properties such as high melting point, machinability, thermal stability, low linear thermal expansion coefficient (3.9×10 -6/K, 200°-1300°C), and low thermal conductivity (<3.0 W/ṁK above 300°C). The hot corrosion behavior of γ-Y 2Si 2O 7 in thin-film molten Na 2SO 4 at 850°-1000°C for 20 h in flowing air was investigated using a thermogravimetric analyzer (TGA) and a mass spectrometer (MS). γ-Y 2Si 2O 7 exhibited good resistance against Na 2SO 4 molten salt. The kinetic curves were well fitted by a paralinear equation: the linear part was caused by the evaporation of Na2SO4 and the parabolic part came from gas products evolved from the hotcorrosion reaction. A thin silica film formed under the corrosion scale was the key factor for retarding the hot corrosion. The apparent activation energy for the corrosion of γ-Y 2Si 2O 7 in Na 2SO 4 molten salt with flowing air was evaluated to be 255 kJ/mol.

Implantation Induced Hardening of Nanocrystalline Titanium Thin Films

Formation of nanocrystalline TiN at low temperatures was demonstrated by combining Pulsed Laser Deposition (PLD) and ion implantation techniques. The Ti films of nominal thickness similar to 250 nm were deposited at a substrate temperature of 200 degrees C by ablating a high pure titanium target in UHV conditions using a nanosecond pulsed Nd:YAG laser operating at 1064 nm. These films were implanted with 100 keV N+ ions with fluence ranging from 1.0 x 10(16) ions/cm(2) to 1.0 x 10(17) ions/cm(2). The structural, compositional and morphological evolutions were tracked using Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectrometry (SIMS) and Atomic Force Microscopy (AFM), respectively. TEM analysis revealed that the as-deposited titanium film is an fcc phase. With increasing ion fluence, its structure becomes amorphous phase before precipitation of nanocrystalline fcc TiN phase. Compositional depth profiles obtained from SIMS have shown the extent of nitrogen concentration gradient in the implantation zone. Both as-deposited and ion implanted films showed much higher hardness as compared to the bulk titanium. AFM studies revealed a gradual increase in surface roughness leading to surface patterning with increase in ion fluence.

Dielectric anomaly in Li-doped zinc oxide thin films grown by sol-gel route

Sol-gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn1-xLixO, x=0.15). Polycrystalline films were obtained at a growth temperature of 400-500 degrees C. Ferroelectricity in Zn0.85Li0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the C-V measurements. The phase transition temperature was found to be 330 K. The room-temperature dielectric constant and dissipation factor were 15.5 and 0.09 respectively, at a frequency of 100 kHz. The films exhibited well-defined hysteresis loop, and the values of spontaneous polarization (P-s) and coercive field were 0.15 mu C/cm(2) and 20 kV/cm, respectively, confirming the presence of ferroelectricity.

High energy oxygen ion induced modifications in lead based perovskite thin films

The lead based ferroelectric PbZr0.53Ti0.47O3 (PZT), (Pb0.90La0.10)TiO3 (PLT10) and (Pb0.80La0.20)TiO3 (PLT20) thin films, prepared by pulsed laser ablation technique, were studied for their response to the 70 MeV oxygen ion irradiation. The dielectric analysis, capacitance-voltage (C- V) and DC leakage current measurements were performed before and after the irradiation to high-energy oxygen ions. The irradiation produced considerable changes in the dielectric, C-V, leakage characteristics and induced some amount of amorphization. The PZT films showed partial recrystallization after a thermal annealing at 400 degrees C for 10 min. The phase transition temperature [T-c] of PLT20 increased from 115 degrees C to 120 degrees C. The DC conductivity measurements showed a shift in the onset of non-linear conduction region. The current density decreased by two orders of magnitude after irradiation. After annealing the irradiated films at a temperature of 400 degrees C for 10 min, the films partially regained the dielectric and electrical properties. The results are discussed in terms of the irradiation-induced amorphization, the pinning of the ferroelectric domains by trapped charges and the thermal annealing of the defects generated during the irradiation. (C) 2007 Elsevier B.V. All rights reserved.