984 resultados para SINGLE-CRYSTALLINE
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This paper reports the production of bismuth germanate ceramic scintillator (Bi4Ge3O12) by combustion synthesis (SHS) method, focusing on the influence of the synthesis parameters on the crystalline phases and agglomeration of the nanoparticles. The synthesis and sintering conditions were investigated through thermal analysis, X-ray diffraction as function of temperature, dilatometry and scanning electron microscopy. Well-dispersed Bi4Ge3O12 powder was accomplished by the combustion of the initial solution at pH 9, followed by low temperature calcination and milling. Sintered ceramics presented relative density of 98% and single crystalline Bi4Ge3O12 phase. The luminescent properties of the ceramics were investigated by photo- and radio- luminescence measurements and reproduced the typical Bi4Ge3O12 single-crystal spectra when excited with UV, beta and X-rays. The sintered ceramics presented light output of 4.4 x 10(3) photons/McV. (c) 2008 Published by Elsevier Ltd.
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The thermoluminescence (TL) response of Dy and Li doped 20CaB(4)O(7)-80CaB(2)O(4) (Wt%) glass-ceramic irradiated with ultraviolet (UV) radiation was studied. In order to act as TL activator ions, the Dy and Li ions were included in the matrix during the melting process to increase its TL efficiency. A single crystalline CaB2O4 phase was present in the glass-ceramic as determined by X-ray diffraction (XRD). The glass-ceramic 20CaB(4)O(7)-80CaB(2)O(4):Dy,Li wt% (named 20CBO7:Dy,Li) is a newly prepared TL material. Its thermoluminescent dosimetric characteristics have shown a linear response under UV radiation exposure and a good TL signal reproducibility, thus proving to be a promising material for using as an ultraviolet radiation dosimeter. (C) 2007 Elsevier B.V. All rights reserved.
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Bismuth germanate films were prepared by dip coating and spin coating techniques and the dependence of the luminescent properties of the samples on the resin viscosity and deposition technique was investigated. The resin used for the preparation of the films was obtained via Pechini method, employing the precursors Bi(2)O(3) and GeO(2). Citric acid and ethylene glycol were used as chelating and cross-linking agents, respectively. Results from X-ray diffraction and Raman spectroscopy indicated that the films sintered at 700 degrees C for 10 h presented the single crystalline phase Bi(4)Ge(3)O(12). SEM images of the films have shown that homogeneous flat films can be produced by the two techniques investigated. All the samples presented the typical Bi(4)Ge(3)O(12) emission band centred at 505 nm. Films with 3.1 mu m average thickness presented 80% of the luminescence intensity registered for the single crystal at the maximum wavelength. Published by Elsevier B.V.
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Ba0.77Ca0.23TiO3 (BCT23) nanometric powders, synthesized by the modified Pechini method, were used as precursor to produce thick films (50-130 mu m) employing the electrophoretic deposition (EPD) technique. The BCT23 powder presented a single crystalline phase with an average particle size and a crystallite size of similar to 60 nm and similar to 20 nm, respectively, when calcined at 800 degrees C/2h. BCT23 thick films were deposited on platinum substrates starting from different suspensions prepared by dispersion of the powder into: isopropyl alcohol (IPA) or a mixture of acetylacetone (Acac) and ethanol (EtOH) (1:1, volumetric ratio). A milling process was used to deagglomerate the powders in order to increase the suspension stability and improving the deposition. Dense and crack free thick films with uniform microstructure were obtained after sintering at 1300 degrees C/2 h from Acac+EtOH solution. (C) 2007 Elsevier B.V. All rights reserved.
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The thermoluminescence (TL) response of Dy and Li doped 20CaB(4)O(7)-80CaB(2)O(4) (Wt%) glass-ceramic irradiated with ultraviolet (UV) radiation was studied. In order to act as TL activator ions, the Dy and Li ions were included in the matrix during the melting process to increase its TL efficiency. A single crystalline CaB2O4 phase was present in the glass-ceramic as determined by X-ray diffraction (XRD). The glass-ceramic 20CaB(4)O(7)-80CaB(2)O(4):Dy,Li wt% (named 20CBO7:Dy,Li) is a newly prepared TL material. Its thermoluminescent dosimetric characteristics have shown a linear response under UV radiation exposure and a good TL signal reproducibility, thus proving to be a promising material for using as an ultraviolet radiation dosimeter. (C) 2007 Elsevier B.V. All rights reserved.
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Indium-tin oxide nanostructures were deposited by excimer laser ablation in a nitrogen atmosphere using catalyst-free oxidized silicon substrates at 500 degrees C. Up to 1 mbar, nanowires grew by the vapor-liquid-solid (VLS) mechanism, with the amount of liquid material decreasing as the deposition pressure increased. The nanowires present the single-crystalline cubic bixbyite structure, oriented < 100 >. For the highest pressure used, pyramids were formed and no sign of liquid material could be observed, indicating that these structures grew by a vapor-solid mechanism. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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This communication discusses the formation of doped nanobelts produced by a simple route. Tin-doped indium oxide (ITO) nanobelts were obtained by a carbothermal reduction method. The nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDX) and wavelength-dispersive X-ray spectroscopy (WDX). The results show that the nanobelts have a cubic structure, are single crystalline and doped with tin and grow in the [400] direction.
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Indium-tin oxide nanowires were deposited by excimer laser ablation onto catalyst-free oxidized silicon substrates at a low temperature of 500 degrees C in a nitrogen atmosphere. The nanowires have branches with spheres at the tips, indicating a vapor-liquid-solid (VLS) growth. The deposition time and pressure have a strong influence on the areal density and length of the nanowires. At the earlier stages of growth, lower pressures promote a larger number of nucleation centers. With the increase in deposition time, both the number and length of the wires increase up to an areal density of about 70 wires/mu m(2). After this point all the material arriving at the substrate is used for lengthening the existing wires and their branches. The nanowires present the single-crystalline cubic bixbyite structure of indium oxide, oriented in the [100] direction. These structures have potential applications in electrical and optical nanoscale devices.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Single crystalline SnO micro-disks, synthesized by a carbothermal reduction process, exhibited a nearly 1000-fold increase in resistance upon exposure to 100 ppm of NO2 without addition of catalysts or dopants nor the existence of nano-sized dimensions. Moreover, the SnO displayed a greater than 100-fold selectivity to NO2 over potential interferents including CO, H2 and CH4. The high sensor signal and exceptional selectivity for this novel sensor material are attributed to the existence of a high density of active lone pair electrons on the exposed (0 0 1) planes of the single crystalline SnO disks. This, thereby, identifies new means, not utilizing nano-dimensions, to achieve high gas sensitivity. © 2013 Elsevier B.V. All rights reserved.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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As the area of nanotechnology continues to grow, the development of new nanomaterials with interesting physical and electronic properties and improved characterization techniques are several areas of research that will be remain vital for continued improvement of devices and the understanding in nanoscale phenomenon. In this dissertation, the chemical vapor deposition synthesis of rare earth (RE) compounds is described in detail. In general, the procedure involves the vaporization of a REClx (RE = Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho) in the presence of hydride phase precursors such as decaborane and ammonia at high temperatures and low pressures. The vapor-liquid-solid mechanism was used in combination with the chemical vapor deposition process to synthesize single crystalline rare earth hexaboride nanostructures. The crystallographic orientation of as-synthesized rare earth hexaboride nanostructures and gadolinium nitride thin films was controlled by judicious choice of specific growth substrates and modeled by analyzing x-ray diffraction powder patterns and crystallographic models. The rare earth hexaboride nanostructures were then implemented into two existing technologies to enhance their characterization capabilities. First, the rare earth hexaboride nanowires were used as a test material for the development of a TEM based local electrode atom probe tomography (LEAP) technique. This technique provided some of the first quantitative compositional information of the rare earth hexaboride systems. Second, due to the rigidity and excellent conductivity of the rare earth hexaborides, nanostructures were grown onto tungsten wires for the development of robust, oxidation resistant nanomanipulator electronic probes for semiconductor device failure analysis.