Numerical modeling of optical levitation and trapping of the "stuck" particles with a pulsed optical tweezers

We present the theoretical analysis and the numerical modeling of optical levitation and trapping of the stuck particles with a pulsed optical tweezers. In our model, a pulsed laser was used to generate a large gradient force within a short duration that overcame the adhesive interaction between the stuck particles and the surface; and then a low power continuous - wave (cw) laser was used to capture the levitated particle. We describe the gradient force generated by the pulsed optical tweezers and model the binding interaction between the stuck beads and glass surface by the dominative van der Waals force with a randomly distributed binding strength. We numerically calculate the single pulse levitation efficiency for polystyrene beads as the function of the pulse energy, the axial displacement from the surface to the pulsed laser focus and the pulse duration. The result of our numerical modeling is qualitatively consistent with the experimental result. (C) 2005 Optical Society of America.

Local thermal fixing of a photorefractive LiNbO3 hologram by use of a CO2 laser

A real-time, in situ fixing method by use of heating with a CO2 laser beam is suggested for thermal fixing of a small local hologram in the bulk of a Fe:LiNbO3 photorefractive crystal. For heating up to 100 degrees C-200 degrees C a volume with a shape similar to that of the laser beam a heat-guiding technique is developed. On the basis of the heat-transfer equations, different heating modes with or without metal absorbers for heat guiding-obtained by use of a continuous or pulsed laser beam are analyzed. The optimal mode may be pulsed heating with absorbers. On this basis experiments have been designed and demonstrated. It is seen that the fixing process with CO2 laser beam is short compared with the process by use of an oven, and the fixing efficiency is quite high. (C) 1998 Optical Society of America.

Structural, optical and electrical properties of ZnO films grown on c-plane sapphire and (100)gamma-LiAlO2 by pulse laser deposition

ZnO thin films were grown on single-crystal gamma-LiAlO2 (LAO) and sapphire (0001) substrate by pulsed laser deposition (PLD). The structural, optical and electrical properties of ZnO films were investigated. The results show that LAO is more suitable for fabricating ZnO films than sapphire substrate and the highest-quality ZnO film was attained on LAO at the substrate temperature of 550 degrees C. However, when the substrate temperature rises to 700 degrees C, lithium would diffuse from the substrate (LAO) into ZnO film which makes ZnO film on LAO becomes polycrystalline without preferred orientation, the stress in ZnO film increases dominantly and the resistivity of the film decreases exponentially. (c) 2005 Elsevier B.V. All rights reserved.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

Laser-induced damage morphology of high-reflective optical coatings

Two different kinds of 1064 nm high-reflective (HR) coatings, with and without SiO2 protective layer, were prepared by electron beam evaporation. Three-dimensional damage morphology, caused by a Nd:YAG pulsed laser, was investigated for these HR coatings. Development of laser-induced damage on HR coatings was revealed by both temperature field calculation and discrete meso-element simulation. Theoretical results met experimental very well. (C) 2004 Elsevier B.V. All rights reserved.

Active glass-polymer superlattice structure for photonic integration.

We propose an all-laser processing approach allowing controlled growth of organic-inorganic superlattice structures of rare-earth ion doped tellurium-oxide-based glass and optically transparent polydimethyl siloxane (PDMS) polymer; the purpose of which is to illustrate the structural and thermal compatibility of chemically dissimilar materials at the nanometer scale. Superlattice films with interlayer thicknesses as low as 2 nm were grown using pulsed laser deposition (PLD) at low temperatures (100 °C). Planar waveguides were successfully patterned by femtosecond-laser micro-machining for light propagation and efficient Er(3+)-ion amplified spontaneous emission (ASE). The proposed approach to achieve polymer-glass integration will allow the fabrication of efficient and durable polymer optical amplifiers and lossless photonic devices. The all-laser processing approach, discussed further in this paper, permits the growth of films of a multitude of chemically complex and dissimilar materials for a range of optical, thermal, mechanical and biological functions, which otherwise are impossible to integrate via conventional materials processing techniques.

Picosecond laser patterning of PEDOT:PSS thin films

Picosecond pulsed laser (10.4 ps, 1064 nm, 5 and 50 kHz) patterning studies were performed, of PEDOT:PSS thin films of varying thickness deposited by spin coating on glass substrates, by ablating the films or by changing locally by laser irradiation the optical and electrical properties of the polymer. From a detailed observation of the morphology of single pulse ablated holes on the surfaces of the films, in combination with simple calculations, it is concluded that photomechanical ablation is the likely ablation mechanism of the films. The single pulse ablation thresholds were measured equal to 0.13-0.18 J/cm 2 for films with thicknesses in the region of ∼100-600 nm. The implications on ablation line patterning of the films using different fluences, scanning speeds and pulse repetition rates, were investigated systematically. Laser irradiation of the films before ablation induces a metal-insulator transition of the polymer because of the formation of charge localization due to a possible creation of molecular disorder in the polymer and shortening of its conjugation length. © 2010 Elsevier B.V. All rights reserved.

Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates

(110) oriented ZnO thin films were epitaxially prepared on (001) SrTiO3 single crystal substrates by a pulsed laser deposition method. The evolution of structure, surface morphology, and electrical conductivity of ZnO films was investigated on changing the growth temperature. Two domain configurations with 90 degrees rotation to each other in the film plane were found to exist to reduce the lattice mismatch between the films and substrates. In the measured temperature range between 80 K and 300 K, the electrical conductivity can be perfectly fitted by a formula of a (T) = sigma(0) + aT(b/2). implying that the electron-phonon scattering might have a significant contribution to the conductivity. (C) 2008 Elsevier Ltd. All rights reserved.

Structural and optical properties of ZnO thin films on glass substrate grown by laser-ablating Zn target in oxygen atmosphere

C-axis-orientated ZnO thin films were prepared on glass substrates by pulsed-laser deposition (PLD) technique in an oxygen-reactive atmosphere, using a metallic Zn target. The effects of growth condition such as laser energy and substrate temperature on the structural and optical properties of ZnO films had been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission spectra and room-temperature (RT) photoluminescence (PL) measurements. The results showed that the thickness, crystallite size, and compactness of ZnO films increased with the laser energy and substrate temperature. Both the absorption edges and the UV emission peaks of the films exhibited redshift, and UV emission intensity gradually increased as the laser energy and substrate temperature increased. From these results, it was concluded that crystalline quality of ZnO films was improved with increasing laser energy and substrate temperature. (c) 2007 Elsevier B.N. All rights reserved.

EXCIMER-LASER DOPING OF SPIN-ON DOPANT IN SILICON

Solid films containing phosphorus impurities were formed on p-type silicon wafer surface by traditional spin-on of commercially available dopants. The doping process is accomplished by irradiating the sample with a 308 nm XeCl pulsed excimer laser. Shallow junctions with a high concentration of doped impurities were obtained. The measured impurity profile was ''box-like'', and is very suitable for use in VLSI devices. The characteristics of the doping profile against laser fluence (energy density) and number of laser pulses were studied. From these results, it is found that the sheet resistance decreases with the laser fluence above a certain threshold, but it saturates as the energy density is further increased. The junction depth increases with the number of pulses and the laser energy density. The results suggest that this simple spin-on dopant pre-deposition technique can be used to obtain a well controlled doping profile similar to the technique using chemical vapor in pulsed laser doping process.

Comparative studies of semiconductor saturable absorber mirror mode-locking dynamics in pulsed diode-end-pumped picosecond Nd:GdVO4 and Nd:YAG lasers

Ultrashort pulses were generated in passively mode-locked Nd:YAG and Nd:GdVO4 lasers pumped by a pulsed laser diode with 10-Hz repetition rate. Stable mode-locked pulse trains were produced with the pulse width of 10 ps. The evolution of the mode-locked pulse was observed in the experiment and was discussed in detail. Comparing the pulse evolutions of Nd:YAG and Nd:GdVO4 lasers, we found that the buildup time of the steady-state mode-locking with semiconductor saturable absorber mirrors (SESAMs) was relevant to the upper-state lifetime and the emission cross-section of the gain medium.

利用激光诱导击穿光谱对铝合金成分进行多元素同时定量分析

利用激光诱导击穿光谱定量分析了铝合金中多种元素的成分。采用Nd∶YAG脉冲激光器,在空气环境下烧蚀铝合金固体样品获得等离子体。利用多通道光栅光谱仪和CCD检测器对200～980nm波长范围的光谱进行同时检测。研究了检测时延、激光脉冲能量、元素深度分布对光谱强度的影响,考虑这些因素之后对实验参数进行了优化。在优化的实验参数下对国家标准铝合金样品中的八种元素Si,Fe,Cu,Mn,Mg,Zn,Sn及Ni进行了定标,并利用定标曲线对一种铝合金样品进行了定量分析。实验结果表明,测量结果的相对标准偏差(RSD)最大为5.89%,相对误差在-20.99%～15%范围内,说明对铝合金样品成分进行定量分析,激光诱导击穿光谱是一种有效的光谱分析工具,但是分析结果的准确度仍需要提高。

Progressive loss of ferroelectricity under bipolar pulsed fields and experimental determination of non-switchable polarization in Au/Ba0.5Sr0.5TiO3/SrRuO3 thin-film capacitors

175 nm-thick Ba0.5Sr0.5TiO3 (BST) thin film fabricated by pulsed laser deposition (PLD) technique is found to be a mixture of two distributions of material. We discuss whether these two components are nano-regions of paraelectric and ferroelectric phases, or a bimodal grain-size distribution, or an effect of oxygen vacancy gradient from the electrode interface. The fraction of switchable ferroelectric phase decreases under bipolar pulsed fields, but it recovers after removal of the external fields. The plot of capacitance in decreasing dc voltage (C(Vdown arrow) versus that in increasing dc 61 voltage C(Vup arrow) is a superposition of overlapping of two triangles, in contrast to one well-defined triangle for typical ferroelectric SrBi2Ta2O9 thin films.

The Langmuir probe as a diagnostic of the electron component within low temperature laser ablated plasma plumes

A Langmuir probe has been used as a diagnostic of the temporally evolving electron component within a laser ablated Cu plasma expanding into vacuum, for an incident laser power density on target similar to that used for the pulsed laser deposition of thin films. Electron temperature data were obtained from the retarding region of the probe current/voltage (I/V) characteristic, which was also used to calculate an associated electron number density. Additionally, electron number density data were obtained from the saturation electron current region of the probe (I/V) characteristic. Electron number density data, extracted by the two different techniques, were observed to show the same temporal form, with measured absolute values agreeing to within a factor of 2. The Langmuir probe, in the saturation current region, has been shown for the first time to be a convenient diagnostic of the electron component within relatively low temperature laser ablated plasma plumes. (C) 1999 American Institute of Physics. [S0034-6748(99)01503-8].