Direct measurement of phase of foreward-scattered light using polarization heterodyne interferometer

We describe direct measurement of phase of ballistic photons transmitted through objects hidden in a turbid medium using a polarization interferometer employing a rotating analyzer. The unwrapped phase difference measurements from interferometry was possible for medium levels of turbidity and accurate phase measurement from the sinusoidal intensity was not detectable when l/l* is increased beyond 4.3. The measured phase on reconstruction using standard tomographic algorithms resulted in the recovery of the refractive index profile of the object hidden in the turbid medium.

Electrical properties of La-graded heterostructure of Pb1?xLaxTiO3 thin films

La-graded heterostructure films were prepared by sol-gel technique on platinum substrates and electrical properties of these films were compared with those of conventional thin films of similar compositions. X-ray diffraction results indicate the pure perovskite polycrystalline structure of these films. Atomic Force Microscopy analysis revealed a finer grain size and relatively lower surface roughness. Relatively higher values of Pm and Pr (69 and 38 ?C cm?2, respectively) and excellent dielectric properties with lower loss (K=1900, tan ?=0.035 at 100 kHz) were observed for La-graded heterostructure films. Also lower leakage current density (not, vert, similar2.5 nA cm?2) and a higher onset field (not, vert, similar50 kV cm?1) of space charge conduction indicated higher breakdown strength and good leakage current characteristics. The ac electric field dependence of the permittivity at sub-switching fields was analyzed in the framework of the Rayleigh dynamics of domain walls. The estimated irreversible domain wall displacement contribution to the total dielectric permittivity was 17 and 9% for conventional 15 at.% La doped PbTiO3 and La-graded heterostructure films, respectively. The improved dielectric and polarization behavior of La-graded heterostructure films may be attributed to homogenous dopant distribution compared to the conventional 15 at.% La doped PbTiO3 films.

Electrical switching in chalcogenide glasses - Some newer insights

The recent studies on the switching. behavior of several chalcogenide semiconductors indicate that there exists a close relation between the electrical switching and structural effects in these materials; the two network topological Thresholds, namely the Rigidity Percolation and the Chemical Threshold are found to influence considerably the composition dependence of the switching voltages/fields of many memory and threshold switching glasses. Further, changes in the coordination of constituent atoms are found to effect a change in the switching behavior (memory to threshold), Also, an interesting relation has been established between the type of switching exhibited and the thermal diffusivity of the material.

Reactivity switching and selective activation of C-1 or C-3 in 2,3-unsaturated thioglycosides

Reactivity switching and selective activation of C-1 or C-3 in 2,3-unsaturated thioglycosides, namely, 2,3-dideoxy-1-thio-D-hex-2-enopyranosides are reported. The reactivity switching allowed activation of either C-1 or C-3, with the use of either N-iodosuccinimide (NIS)/triflic acid (TfOH) or TfOH alone. C-1 glycosylation with alcohol acceptors occurred in the presence of NIS/TfOH, without the acceptors reacting at C-3. On the other hand, reaction of 2,3-unsaturated thioglycosides with alcohols mediated by triflic acid led to transposition of C-1 ethylthio-moiety to C-3 intramolecularly, to form 3-ethylthio-glycals. Resulting glycals underwent glycosylation with alcohols to afford 3-ethylthio-2-deoxy glycosides. However, when thiol was used as an acceptor, only a stereoselective addition at C-3 resulted, so as to form C-1, C-3 dithio-substituted 2-deoxypyranosides. (C) 2011 Elsevier Ltd. All rights reserved.

Top polarization, forward-backward asymmetry, and new physics

We consider how the measurement of top polarization at the Tevatron can be used to characterize and discriminate among different new physics models that have been suggested to explain the anomalous top forward-backward asymmetry reported at the Tevatron. This has the advantage of catching the essence of the parity-violating effect characteristic to the different suggested new physics models. Other observables constructed from these asymmetries are shown to be useful in discriminating between the models, even after taking into account the statistical errors. Finally, we discuss some signals at the 7 TeV LHC.

Composition tunable memory and threshold switching in Al20As xTe80− x semiconducting glasses

I-V studies indicate a composition dependent switching behavior (Memory or Threshold) in bulk Al20AsxTe80−x glasses, which is determined by the coordination and composition of aluminum. Investigations on temperature and thickness dependence of switching and structural studies on switched samples suggest thermal and electronic mechanisms of switching for the memory and threshold samples, respectively. The present results also show that these samples have a wider composition range of threshold behavior with lower threshold voltages compared to other threshold samples.

Electrical properties of ferroelectric YMnO3 films deposited on n-type Si(111) substrates

YMnO3 thin films were grown on an n-type Si substrate by nebulized spray pyrolysis in the metal-ferroelectric-semiconductor (MFS) configuration. The capacitance-voltage characteristics of the film in the MFS structure exhibit hysteretic behaviour consistent with the polarization charge switching direction, with the memory window decreasing with increase in temperature. The density of the interface states decreases with increasing annealing temperature. Mapping of the silicon energy band gap with the interface states has been carried out. The leakage current, measured in the accumulation region, is lower in well-crystallized thin films and obeys a space-charge limited conduction mechanism. The calculated activation energy from the dc leakage current characteristics of the Arrhenius plot reveals that the activation energy corresponds to oxygen vacancy motion.

Nonvolatile unipolar resistive switching in ultrathin films of graphene and carbon nanotubes

We report unipolar resistive switching in ultrathin films of chemically produced graphene (reduced graphene oxide) and multiwalled carbon nanotubes. The two-terminal devices with yield >99% are made at room temperature by forming continuous films of graphene of thickness similar to 20 nm on indium tin oxide coated glass electrode, followed by metal (Au or Al) deposition on the film. These memory devices are nonvolatile, rewritable with ON/OFF ratios up to similar to 10(5) and switching times up to 10 mu s. The devices made of MWNT films are rewritable with ON/OFF ratios up to similar to 400. The resistive switching mechanism is proposed to be nanogap formation and filamentary conduction paths. (C) 2011 Elsevier Ltd. All rights reserved.

Electrical switching studies on AS(40)Te(60-x)Se(x) and As35Te65-xSex glasses

The I-V characteristics of bulk As40Te60-xSex and As35Te65-xSex glasses have been studied with a current sweep of 0-18 mA-0, over a wide range of compositions (4 less than or equal to x less than or equal to 22). All the glasses studied showed a threshold electrical switching behaviour. The number of switching cycles withstood by the samples has been found to depend on the ON-state current. It is seen that the switching voltages increase with increase in selenium content. Further, the switching voltages are found to be almost independent of the thickness of the sample (d), in the range 0.18-0.3 mm. Also, the switching voltages and the number of switching cycles withstood by the samples are found to decrease with temperature.

From polarization to convergence: need to mend the broken patent system

For more than two hundred years, the world has discussed the issue of whether to continue the process of patenting or whether to do away with it. Developed countries remain polarized for various reasons but nevertheless the pro patent regime continued. The result was a huge volume of patents. The present article explains the implications of excessive volume of patents and conditions under which prior art search fails. This article highlights the importance and necessity of standardization efforts so as to bring about convergence of views on patenting.

Effects of polarization on study of anomalous VVH interactions at a Linear Collider

We investigate the use of beam polarisation as well as nal state polarisation efects in probing the interaction of the Higgs boson with a pair of heavy vector bosons in the process e+e! ffH, where f is any light fermion. The sensitivity of the International Linear Collider (ILC) operating at ps = 500 GeV, to such V V H(V = W=Z) couplings is examined in a model independent way. The efects of ISR and beamstrahlung are discussed.

An improved sapce phasor based current hysteresis controller with reduced switching frequency variations using variable parabolic bands

A current error space phasor based simple hysteresis controller is proposed in this paper to control the switching frequency variation in two-level pulsewidth-modulation (PWM) inverter-fed induction motor (IM) drives. A parabolic boundary for the current error space phasor is suggested for the first time to obtain the switching frequency spectrum for output voltage with hysteresis controller similar to the constant switching frequency voltage-controlled space vector PWM-based IM drive. A novel concept of online variation of this parabolic boundary, which depends on the operating speed of motor, is presented. A generalized technique that determines the set of unique parabolic boundaries for a two-level inverter feeding any given induction motor is described. The sector change logic is self-adaptive and is capable of taking the drive up to the six-step mode if needed. Steady-state and transient performance of proposed controller is experimentally verified on a 3.7-kW IM drive in the entire speed range. Close resemblance of the simulation and experimental results is shown.