940 resultados para Laminated metals
Resumo:
Trace metals constitute a major form of water pollutant that can adversely affect fish production. The potentially toxic metals have been identified as lead, zinc, copper, arsenic, antimony, mercury beryllium, barium, cadmium, chromium, nickel, selenium among others. Preliminary laboratory studies have been directed to the determination of traces of lead in the aquatic biota and its toxicity. There are indications that the levels reported in effluents from some of the industries may be above the tolerant limits of local fish species and organisms that make up their food. Metal pollution could become a serious problem to freshwater fisheries in the future as a result of increasing urbanization and industrialization, unless efforts are made to prevent it
Resumo:
Amorphous metals that form fully glassy parts over a few millimeters in thickness are still relatively new materials. Their glassy structure gives them particularly high strengths, high yield strains, high hardness values, high resilience, and low damping losses, but this can also result in an extremely low tolerance to the presence of flaws in the material. Since this glassy structure lacks the ordered crystal structure, it also lacks the crystalline defect (dislocations) that provides the micromechanism of toughening and flaw insensitivity in conventional metals. Without a sufficient and reliable toughness that results in a large tolerance of damage in the material, metallic glasses will struggle to be adopted commercially. Here, we identify the origin of toughness in metallic glass as the competition between the intrinsic toughening mechanism of shear banding ahead of a crack and crack propagation by the cavitation of the liquid inside the shear bands. We present a detailed study over the first three chapters mainly focusing on the process of shear banding; its crucial role in giving rise to one of the most damage-tolerant materials known, its extreme sensitivity to the configurational state of a glass with moderate toughness, and how the configurational state can be changed with the addition of minor elements. The last chapter is a novel investigation into the cavitation barrier in glass-forming liquids, the competing process to shear banding. The combination of our results represents an increased understanding of the major influences on the fracture toughness of metallic glasses and thus provides a path for the improvement and development of tougher metallic glasses.
Resumo:
The level and distribution of some heavy metals viz Cadmium, Lead, Copper Zinc, and Cobalt in five commercially important fishes, water and sediments at three different locations in Kainj Lake were determined using standard methods. The results show that the ranges of heavy metals mu g/g in fishes in Dam site Laotian are: Cd (0.05~c0.01-20~c01), (Pb(ND-1.12 plus or minus )1), Cu (0.81~c25-2.93~c06), Zn (20.89 arrow right .15-36.78~c2.97), Co(0.08~c01-0.27~c02); in cover Dam, the ranges are Cd (0.04~c02-0.16~c0.2), Pb (nd-02~c01), Cu(0.75~c05-2.61~c13), Zn(15.70~c1.55-32.23~c2.70), Co(0.04~c02-0.25~c0.01) and in Yuna they are Cd (0.05~c01-0.14~c02), Pb (nd-0.32~c01), Cu (0.23~c07-2.70~c05), Zn(15.50 plus or minus `.35-25.62~c2.47), Co(0.07~c02-23~c0.01). The metals concentration (mg/l) in the water sample from Dam site, cover dam and Yuna respectively are Cd(0.007~c001,. 004~c001 and 0.005~001), Pb(013~c001, ND and ND), Cu(.055~c008.030~c007, 05 plus or minus .010), Zn(0.13~c01, 0.060 plus or minus .0055) and Co (.026 plus or minus .022 plus or minus .004, .024 plus or minus .004), while the metals concentration ( mu g/g) in sediments sample from Dam site, cover dam and Yuna are respectively Cd(.05 plus or minus .01, .02 plus or minus .01), Pb(16.00~c1.00, ND and 9.33~c1.01), Cu(24.00~c1.34, 4.26 plus or minus .91 and 11.08~c1.32), Zn(42.00~c1.00, 35~c10 and 38.00 plus or minus .45), Co(15.00~c1.17, 8.69~c1.21 and 10.91~c44). The concentrations of the tested heavy metals are within the acceptable standards of WHO (1987a)
Resumo:
The uptake of Cu, Zn, and Cd by fresh water plankton was studied by analyzing samples of water and plankton from six lakes in southern California. Co, Pb, Mn, Fe, Na, K, Mg, Ca, Sr, Ba, and Al were also determined in the plankton samples. Special precautions were taken during sampling and analysis to avoid metal contamination.
The relation between aqueous metal concentrations and the concentrations of metals in plankton was studied by plotting aqueous and plankton metal concentrations vs time and comparing the plots. No plankton metal plot showed the same changes as its corresponding aqueous metal plot, though long-term trends were similar. Thus, passive sorption did not completely explain plankton metal uptake.
The fractions of Cu, Zn, and Cd in lake water which were associated with plankton were calculated and these fractions were less than 1% in every case.
To see whether or not plankton metal uptake could deplete aqueous metal concentrations by measurable amounts (e.g. 20%) in short periods (e.g. less than six days), three integrated rate equations were used as models of plankton metal sorption. Parameters for the equations were taken from actual field measurements. Measurable reductions in concentration within short times were predicted by all three equations when the concentration factor was greater than 10^5. All Cu concentration factors were less than 10^5.
The role of plankton was regulating metal concentrations considered in the context of a model of trace metal chemistry in lakes. The model assumes that all particles can be represented by a single solid phase and that the solid phase controls aqueous metal concentrations. A term for the rate of in situ production of particulate matter is included and primary productivity was used for this parameter. In San Vicente Reservoir, the test case, the rate of in situ production of particulate matter was of the same order of magnitude as the rate of introduction of particulate matter by the influent stream.
Resumo:
The electrical and magnetic properties of amorphous alloys obtained by rapid quenching from the liquid state have been studied. The composition of these alloys corresponds to the general formula MxPd80-xSi20, in which M stands for a metal of the first transition series between chromium and nickel and x is its atomic concentration. The concentration ranges within which an amorphous structure could be obtained were: from 0 to 7 for Cr, Mn and Fe, from 0 to 11 for Co and from 0 to 15 for Ni. A well-defined minimum in the resistivity vs temperature curve was observed for all alloys except those containing nickel. The alloys for which a resistivity minimum was observed had a negative magnetoresistivity approximately proportional to the square of the magnetization and their susceptibility obeyed the Curie-Weiss law in a wide temperature range. For concentrated Fe and Co alloys the resistivity minimum was found to coexist with ferromagnetism. These observations lead to the conclusion that the present results are due to a s-d exchange interaction. The unusually high resistivity minimum temperature observed in the Cr alloys is interpreted as a result of a high Kondo temperature and a large s-d exchange integral. A low Fermi energy of the amorphous alloys (3.5 eV) is also responsible for the anomalies due to the s-d exchange interaction.
Resumo:
The main factors affecting solid-phase Si-metal interactions are reported in this work. The influence of the orientation of the Si substrates and the presence of impurities in metal films and at the Si-metal interface on the formation of nickel and chromium silicides have been demonstrated. We have observed that the formation and kinetic rate of growth of nickel silicides is strongly dependent on the orientation and crystallinity of the Si substrates; a fact which, up to date, has never been seriously investigated in silicide formation. Impurity contaminations in the Cr film and at the Si-Cr interface are the most dominant influencing factors in the formation and kinetic rate of growth of CrSi2. The potentiality and use of silicides as a diffusion barrier in metallization on silicon devices were also investigated.
Two phases, Ni2Si and NiSi, form simultaneously in two distinct sublayers in the reaction of Ni with amorphous Si, while only the former phase was observed on other substrates. On (111) oriented Si substrates the growth rate is about 2 to 3 times less than that on <100> or polycrystalline Si. Transmission electron micrographs establish-·that silicide layers grown on different substrates have different microcrystalline structures. The concept of grain-boundary diffusion is speculated to be an important factor in silicide formation.
The composition and kinetic rate of CrSi2 formation are not influenced by the underlying Si substrate. While the orientation of the Si substrate does not affect the formation of CrSi2 , the purity of the Cr film and the state of Si-Cr interface become the predominant factors in the reaction process. With an interposed layer of Pd2Si between the Cr film and the Si substrate, CrSi2 starts to form at a much lower temperature (400°C) relative to the Si-Cr system. However, the growth rate of CrSi2 is observed to be independent of the thickness of the Pd2Si layer. For both Si-Cr and Si-Pd2Si-Cr samples, the growth rate is linear with time with an activation energy of 1.7 ± 0.1 ev.
A tracer technique using radioactive 31Si (T1/2 = 2.26 h) was used to study the formation of CrSi2 on Pd2Si. It is established from this experiment that the growth of CrSi2 takes place partly by transport of Si directly from the Si substrate and partly by breaking Pd2Si bonds, making free Si atoms available for the growth process.
The role of CrSi2 in Pd-Al metallization on Si was studied. It is established that a thin CrSi2 layer can be used as a diffusion barrier to prevent Al from interacting with Pd2Si in the Pd-Al metallization on Si.
As a generalization of what has been observed for polycrystalline-Si-Al interaction, the reactions between polycrystalline Si (poly Si) and other metals were studied. The metals investigated include Ni, Cr, Pd, Ag and Au. For Ni, Cr and Pd, annealing results in silicide formation, at temperatures similar to those observed on single crystal Si substrates. For Al, Ag and Au, which form simple eutectics with Si annealing results in erosion of the poly Si layer and growth of Si crystallites in the metal films.
Backscattering spectrometry with 2.0 and 2.3 MeV 4He ions was the main analytical tool used in all our investigations. Other experimental techniques include the Read camera glancing angle x-ray diffraction, scanning electron, optical and transmission electron microscopy. Details of these analytical techniques are given in Chapter II.
Resumo:
To make stable and reproducible contacts to GaAs, metals which react with GaAs in the solid-phase should be favored. In this study, contacts formed employing Pd/TiN/Pd/Ag, Pd:Mg/TiN/Pd:Mg/Ag and Ru/TiN/Ru/Ag are studied. The TiN layer is included to investigate its application as diffusion barrier in these metallizations. Contacts to n-GaAs are rectifying and the value of barrier height is modified upon annealing. Contacts to p-GaAs are initially rectifying but exhibit ohmic behaviour after annealing. The modifications in the electrical properties are attributed to the solid-phase reaction of metal and GaAs. The integrity of the contacts relies critically on the success of TiN to prevent the intermixing of Ag overlayer and the underlying layers. At elevated annealing temperatures (450°C), TiN fails to function as a diffusion barrier. As a result, the properties of the contact deteriorates.