935 resultados para InGaAs overgrowth layer


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In the early 19th century, industrial revolution was fuelled mainly by the development of machine based manufacturing and the increased use of coal. Later on, the focal point shifted to oil, thanks to the mass-production technology, ease of transport/storage and also the (less) environmental issues in comparison with the coal!! By the dawn of 21st century, due to the depletion of oil reserves and pollution resulting from heavy usage of oil the demand for clean energy was on the rising edge. This ever growing demand has propelled research on photovoltaics which has emerged successful and is currently being looked up to as the only solace for meeting our present day energy requirements. The proven PV technology on commercial scale is based on silicon but the recent boom in the demand for photovoltaic modules has in turn created a shortage in supply of silicon. Also the technology is still not accessible to common man. This has onset the research and development work on moderately efficient, eco-friendly and low cost photovoltaic devices (solar cells). Thin film photovoltaic modules have made a breakthrough entry in the PV market on these grounds. Thin films have the potential to revolutionize the present cost structure of solar cells by eliminating the use of the expensive silicon wafers that alone accounts for above 50% of total module manufacturing cost.Well developed thin film photovoltaic technologies are based on amorphous silicon, CdTe and CuInSe2. However the cell fabrication process using amorphous silicon requires handling of very toxic gases (like phosphene, silane and borane) and costly technologies for cell fabrication. In the case of other materials too, there are difficulties like maintaining stoichiometry (especially in large area films), alleged environmental hazards and high cost of indium. Hence there is an urgent need for the development of materials that are easy to prepare, eco-friendly and available in abundance. The work presented in this thesis is an attempt towards the development of a cost-effective, eco-friendly material for thin film solar cells using simple economically viable technique. Sn-based window and absorber layers deposited using Chemical Spray Pyrolysis (CSP) technique have been chosen for the purpose

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Electron scattering on a thin layer where the potential depends self-consistently on the wave function has been studied. When the amplitude of the incident wave exceeds a certain threshold, a soliton-shaped brightening (darkening) appears on the layer causing diffraction of the wave. Thus the spontaneously formed transverse pattern can be viewed as a self-induced nonlinear quantum screen. Attractive or repulsive nonlinearities result in different phase shifts of the wave function on the screen, which give rise to quite different diffraction patterns. Among others, the nonlinearity can cause self-focusing of the incident wave into a beam, splitting in two "beams," single or double traces with suppressed reflection or transmission, etc.

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The thesis is divided into six chapters, with Further subdivisions.’ Chapter one has two sections. Section one deals with a general introduction, and section two,with the material and treatment of data For the present investigation. The second chapter concerns with the distribution of oxyty in the oxygen minimum layer and its topography during the southwest and northeast monsoons. The distribution of oxyty at various isanosteric surfaces within which the oxygen minimum layer lies during southwest and northeast monsoons and their topographies Form chapter three. In the fourth chapter the Flow pattern and its influence on the oxygen minimum layer are discussed. The fifth chapter presents the scatter diagrams of oxyty against temperature at the various isanosteric surfaces. The sixth chapter summarises the results of the investigation and presents the conclusions drawn therefrom

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This thesis is the result of an elaborate study on the mixed layer depth (MLD) and the various oceanic environmental factors controlling it in the Arabian Sea examining its predictability on annual and short term basis. To accomplish this, the study area between 100 — 250 N latitudes and 600 — 750 E longitudes in the Arabian Sea is divided into 8 subareas of 50 quadrangles. The distribution of monthly means of the surface wind field, net heat exchange mKi868€%WTmN¥tWMWF3UH9 (SST) over each subarea in the annual cycle is examined. The corresponding wind (mechanical) and convective mixing values are computed and presented along with the observed mean MLD for the subareas in the annual cycle. Effects of advection due to surface currents and surface divergence (convergence and divergence) for these subareas are examined for correlating the MLD variations. A representative time series data from typical deep water station under southwest monsoonal forcing is analysed for the spectral components to estimate the amplitude perturbations on the mean MLD variation

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The oscillations in the Atmospheric Boundary Layer (ABL) are important because the transport mechanism from the surface to the upper atmosphere is governed by the ABL characteristics. The study was carried out using wind and temperature data observed at surface, 925 hPa and 850 hPa levels over Cochin and the different frequencies embedded in the boundary layer parameters are identified by employing wavelet technique. Surface boundary layer characteristics over the monsoon region are closely linked to the upper layer monsoon features. In this perception it is important to study the various oscillations in the surface boundary layer and the layer above. It is found that the wind and temperature at different levels show oscillations in Quasi Biweekly Mode (QBM) and Intra Seasonal Oscillation (ISO) bands as observed in a typical monsoon system. Amplitude of the oscillation varies with height. The amplitude of the QBM periodicity is more in the surface levels but in the upper levels the amplitude of the ISO periodicity is more than that of the QBM. From this, it is obvious that the controlling mechanism of QBM band is surface parameters such as surface friction and that for ISO band is associated with the active-break cycles of monsoon system

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This study attempted to quantify the variations of the surface marine atmospheric boundary layer (MABL) parameters associated with the tropical Cyclone Gonu formed over the Arabian Sea during 30 May–7 June 2007 (just after the monsoon onset). These characteristics were evaluated in terms of surface wind, drag coefficient, wind stress, horizontal divergence, and frictional velocity using 0.5◦ × 0.5◦ resolution Quick Scatterometer (QuikSCAT) wind products. The variation of these different surface boundary layer parameters was studied for three defined cyclone life stages: prior to the formation, during, and after the cyclone passage. Drastic variations of the MABL parameters during the passage of the cyclone were observed. The wind strength increased from 12 to 22 m s−1 in association with different stages of Gonu. Frictional velocity increased from a value of 0.1–0.6 m s−1 during the formative stage of the system to a high value of 0.3–1.4 m s−1 during the mature stage. Drag coefficient varied from 1.5 × 10−3 to 2.5 × 10−3 during the occurrence of Gonu. Wind stress values varied from 0.4 to 1.1 N m−2. Wind stress curl values varied from 10 × 10−7 to 45 × 10−7 N m−3. Generally, convergent winds prevailed with the numerical value of divergence varying from 0 to –4 × 10−5 s−1. Maximum variations of the wind parameters were found in the wall cloud region of the cyclone. The parameters returned to normally observed values in 1–3 days after the cyclone passage

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Atmospheric surface boundary layer parameters vary anomalously in response to the occurrence of annular solar eclipse on 15th January 2010 over Cochin. It was the longest annular solar eclipse occurred over South India with high intensity. As it occurred during the noon hours, it is considered to be much more significant because of its effects in all the regions of atmosphere including ionosphere. Since the insolation is the main driving factor responsible for the anomalous changes occurred in the surface layer due to annular solar eclipse, occurred on 15th January 2010, that played very important role in understanding dynamics of the atmosphere during the eclipse period because of its coincidence with the noon time. The Sonic anemometer is able to give data of zonal, meridional and vertical wind as well as the air temperature at a temporal resolution of 1 s. Different surface boundary layer parameters and turbulent fluxes were computed by the application of eddy correlation technique using the high resolution station data. The surface boundary layer parameters that are computed using the sonic anemometer data during the period are momentum flux, sensible heat flux, turbulent kinetic energy, frictional velocity (u*), variance of temperature, variances of u, v and w wind. In order to compare the results, a control run has been done using the data of previous day as well as next day. It is noted that over the specified time period of annular solar eclipse, all the above stated surface boundary layer parameters vary anomalously when compared with the control run. From the observations we could note that momentum flux was 0.1 Nm 2 instead of the mean value 0.2 Nm-2 when there was eclipse. Sensible heat flux anomalously decreases to 50 Nm 2 instead of the mean value 200 Nm 2 at the time of solar eclipse. The turbulent kinetic energy decreases to 0.2 m2s 2 from the mean value 1 m2s 2. The frictional velocity value decreases to 0.05 ms 1 instead of the mean value 0.2 ms 1. The present study aimed at understanding the dynamics of surface layer in response to the annular solar eclipse over a tropical coastal station, occurred during the noon hours. Key words: annular solar eclipse, surface boundary layer, sonic anemometer

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The marine atmospheric boundary layer (MABL) plays a vital role in the transport of momentum and heat from the surface of the ocean into the atmosphere. A detailed study on the MABL characteristics was carried out using high-resolution surface-wind data as measured by the QuikSCAT (Quick scatterometer) satellite. Spatial variations in the surface wind, frictional velocity, roughness parameter and drag coe±cient for the di®erent seasons were studied. The surface wind was strong during the southwest monsoon season due to the modulation induced by the Low Level Jetstream. The drag coe±cient was larger during this season, due to the strong winds and was lower during the winter months. The spatial variations in the frictional velocity over the seas was small during the post-monsoon season (»0.2 m s¡1). The maximum spatial variation in the frictional velocity was found over the south Arabian Sea (0.3 to 0.5 m s¡1) during the southwest monsoon period, followed by the pre-monsoon over the Bay of Bengal (0.1 to 0.25 m s¡1). The mean wind-stress curl during the winter was positive over the equatorial region, with a maximum value of 1.5£10¡7 N m¡3, but on either side of the equatorial belt, a negative wind-stress curl dominated. The area average of the frictional velocity and drag coe±cient over the Arabian Sea and Bay of Bengal were also studied. The values of frictional velocity shows a variability that is similar to the intraseasonal oscillation (ISO) and this was con¯rmed via wavelet analysis. In the case of the drag coe±cient, the prominent oscillations were ISO and quasi-biweekly mode (QBM). The interrelationship between the drag coe±cient and the frictional velocity with wind speed in both the Arabian Sea and the Bay of Bengal was also studied.

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The characteristics of the monsoon boundary layer are imperative to understand in the perception of the tropical regions. The southwest monsoon is associated with a strong wind in the lower troposphere near 1.5 km and is referred to as Low Level Jet stream (LLJ). The boundary layer structure associated with the LLJ during monsoon can be studied using L-band Ultra High Frequency (UHF) radar. This L-band wind profiler-commonly referred as lower atmospheric wind profiler (LAWP), was installed at NARL, Gadanki. Zonal, meridional and vertical wind components are used to understand the diurnal variation of the wind in the Atmospheric Boundary Layer (ABL) and associated features. From the analysis during non rainy days of the southwest monsoon, it is found that the LLJ has maximum strength during the early morning hours at lower level and the height increases as day progresses. The vertical wind shows the transfer of momentum from the LLJ towards the surface, indicating the sinking motion during the daytime. Vertical gradient of the wind shear shows the intensity of clear air turbulence is moderate and no severe clear air turbulence is noticed during the monsoon period

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Roughness and defects induced on few-layer graphene (FLG) irradiated by Ar+ ions at different energies were investigated using X-ray photoemission spectroscopy (XPS) and atomic force microscopy techniques. The results provide direct experimental evidence of ripple formation, sp2 to sp3 hybridized carbon transformation, electronic damage, Ar+ implantation, unusual defects and edge reconstructions in FLG, which depend on the irradiation energy. In addition, shadowing effects similar to those found in oblique-angle growth of thin films were seen. Reliable quantification of the transition from the sp2-bonding to sp3-hybridized state as a result of Ar+ ion irradiation is achieved from the deconvolution of the XPS C (1s) peak. Although the ion irradiation effect is demonstrated through the shape of the derivative of the Auger transition C KVV spectra, we show that the D parameter values obtained from these spectra which are normally used in the literature fail to account for the sp2 to sp3 hybridization transition. In contrast to what is known, it is revealed that using ion irradiation at large FLG sample tilt angles can lead to edge reconstructions. Furthermore, FLG irradiation by low energy of 0.25 keV can be a plausible way of peeling graphene layers without the need of Joule heating reported previously

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In this paper, we report the results of investigations on the potential of spray pyrolysis technique in depositing electron selective layer over larger area for the fabrication of inverted bulk-heterojunction polymer solar cells. The electron selective layer (In2S3) was deposited using spray pyrolysis technique and the linear heterojunction device thus fabricated exhibited good uniformity in photovoltaic properties throughout the area of the device. An MEH-PPV:PCBM inverted bulk-heterojunction device with In2S3 electron selective layer (active area of 3.25 3.25 cm2) was also fabricated and tested under indoor and outdoor conditions. Fromthe indoor measurements employing a tungsten halogen lamp (50mW/cm2 illumination), an opencircuit voltage of 0.41V and a short-circuit current of 5.6mA were obtained. On the other hand, the outdoor measurements under direct sunlight (74mW/cm2) yielded an open-circuit voltage of 0.46V and a short-circuit current of 9.37mA

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Artificial boundary conditions are presented to approximate solutions to Stokes- and Navier-Stokes problems in domains that are layer-like at infinity. Based on results about existence and asymptotics of the solutions v^infinity, p^infinity to the problems in the unbounded domain Omega the error v^infinity - v^R, p^infinity - p^R is estimated in H^1(Omega_R) and L^2(Omega_R), respectively. Here v^R, p^R are the approximating solutions on the truncated domain Omega_R, the parameter R controls the exhausting of Omega. The artificial boundary conditions involve the Steklov-Poincare operator on a circle together with its inverse and thus turn out to be a combination of local and nonlocal boundary operators. Depending on the asymptotic decay of the data of the problems, in the linear case the error vanishes of order O(R^{-N}), where N can be arbitrarily large.

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The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

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We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently removed, thereby transferring a strained-Si layer directly to Si substrate without intermediate SiGe or oxide layers. Complete removal of Ge from the structure was confirmed by cross-sectional transmission electron microscopy as well as secondary ion mass spectrometry. A plan-view transmission electron microscopy study of the strained-Si/Si interface reveals that the lattice-mismatch between the layers is accommodated by an orthogonal array of edge dislocations. This misfit dislocation array, which forms upon bonding, is geometrically necessary and has an average spacing of approximately 40nm, in excellent agreement with established dislocation theory. To our knowledge, this is the first study of a chemically homogeneous, yet lattice-mismatched, interface.

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In this paper, different recovery methods applied at different network layers and time scales are used in order to enhance the network reliability. Each layer deploys its own fault management methods. However, current recovery methods are applied to only a specific layer. New protection schemes, based on the proposed partial disjoint path algorithm, are defined in order to avoid protection duplications in a multi-layer scenario. The new protection schemes also encompass shared segment backup computation and shared risk link group identification. A complete set of experiments proves the efficiency of the proposed methods in relation with previous ones, in terms of resources used to protect the network, the failure recovery time and the request rejection ratio