EBSD characterisation of Y2Ba4CuUOx phase in melttextured YBCO with addition of depleted uranium oxide

Melt-textured YBCO samples processed with added Y2O3 and depleted uranium oxide (DU) contain nano-particles, which have been identified previously as Y2Ba4CuUOx (U-411). This phase has a cubic unit cell, which is clearly distinct from the orthorhombic Y-123 and Y-211 phases within the YBCO system. In samples with a high amount of DU addition (0.8 wt-% DU), U-2411 particles have sizes between 200 nm and several νm, so identification of the Kikuchi patterns of this phase becomes possible. Together with a parallel EDX analysis, the particles embedded in the Y-123 matrix can be identified unambiguously. In this way, a three-phase EBSD scan becomes possible, allowing also the identification of nanometre-sized particles in the sample microstructure. © 2006 IOP Publishing Ltd.

An allelic series reveals essential roles for FY in plant development in addition to flowering-time control

The autonomous pathway functions to promote flowering in Arabidopsis by limiting the accumulation of the floral repressor FLOWERING LOCUS C (FLC). Within this pathway FCA is a plant-specific, nuclear RNA-binding protein, which interacts with FY, a highly conserved eukaryotic polyadenylation factor. FCA and FY function to control polyadenylation site choice during processing of the FCA transcript. Null mutations in the yeast FY homologue Pfs2p are lethal. This raises the question as to whether these essential RNA processing functions are conserved in plants. Characterisation of an allelic series of fy mutations reveals that null alleles are embryo lethal. Furthermore, silencing of FY, but not FCA, is deleterious to growth in Nicotiana. The late-flowering fy alleles are hypomorphic and indicate a requirement for both intact FY WD repeats and the C-terminal domain in repression of FLC. The FY C-terminal domain binds FCA and in vitro assays demonstrate a requirement for both C-terminal FY-PPLPP repeats during this interaction. The expression domain of FY supports its roles in essential and flowering-time functions. Hence, FY may mediate both regulated and constitutive RNA 3'-end processing.

Effects of control of C/N ratio by low-cost carbohydrate addition on water quality and pond ecology in freshwater prawn Macrobrachium rosenbergii post-larvae nursing system

An experiment was conducted to evaluate the effects of control of carbon/nitrogen ratio (C/N ratio) by addition of low cost carbohydrate to the water column on water quality and pond ecology in freshwater prawn Macrobrachium rosenbergii post-larvae nursing system. In this experiment, two level of dietary protein 20% and 35% without carbohydrate addition (‘P20' and ‘P35') and with carbohydrate addition (‘P20+CH' and ‘P35+CH') were compared in small ponds of 40 m² area stocked with 20 post-larvae (0.021 ± 0.001g) per m² . Maize flour was used as low cost carbohydrate and applied to the water column followed by the first feeding during the day. The addition of carbohydrate significantly reduced (p< 0.05) ammonia-nitrogen (NH sub(3)-N) and nitrite-nitrogen (NO sub(2) - N) of water in P20 + CH and P35 + CH treatments. It significantly increased (p< 0.05) the total heterotrophic bacteria (THB) population both in water and sediment. Fifty nine genera of plankton were identified belonging to the Bacillariophyceae (11), Chlorophyceae (21), Cyanophyceae (7), Dinophyceae (1), Rotifera (7) and Crustacea (9) without any significant difference (p>0.05) of total phytoplankton and zooplankton among the treatments. Survival rate of prawn was significantly lowest (p<0.05) in P20 and no significant difference (p>0.05) was observed between P20+CH and P35 treatments. Control of C/N ratio by the addition of low-cost carbohydrate to the pond water column benefited the freshwater prawn nursing practices in three ways (1) increased heterotrophic bacterial growth supplying bacterial protein augment the prawn post-larvae growth performances, (2) reduced demand for supplemental feed protein and subsequent reduction in feed cost and (3) reduced toxic NH sub(3)-N and NO sub(2)-N levels in pond nursing system.

Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes: A first attempt

Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950°C. Various characterization methods verify that the synthesized thin films are largely sp 2 bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes. © 1988-2012 IEEE.

The effect of addition of ZrO2 to Fe2O3 for hydrogen production by chemical looping

In this paper, a synthetic mixture of ZrO2 and Fe 2O3 was prepared by coprecipitation for use in chemical looping and hydrogen production. Cycling experiments in a fluidized bed showed that a material composed of 30 mol % ZrO2 and 70 mol % Fe 2O3 was capable of producing hydrogen with a consistent yield of 90 mol % of the stoichiometric amount over 20 cycles of reduction and oxidation at 1123 K. Here, the iron oxide was subjected to cycles consisting of nearly 100% reduction to Fe followed by reoxidation (with steam or CO 2 and then air) to Fe2O3. There was no contamination by CO of the hydrogen produced, at a lower detection limit of 500 ppm, when the conversion of Fe3O4 to Fe was kept below 90 mol %. A preliminary investigation of the reaction kinetics confirmed that the ZrO2 support does not inhibit rates of reaction compared with those observed with iron oxide alone. © 2012 American Chemical Society.

Effects of silicon addition on the electrical and magnetic properties of copper-doped (La,Ca)MnO3 compounds

In this paper we report about the electrical properties of La 0.7Ca0.3MnO3 compounds substituted by copper on the manganese site and/or deliberately contaminated by SiO2 in the reactant mixture. Several phenomena have been observed and discussed. SiO2 addition leads to the formation of an apatite-like secondary phase that affects the electrical conduction through the percolation of the charge carriers. On the other hand, depending on the relative amounts of copper and silicon, the temperature dependence of the electrical resistivity can be noticeably modified: our results enable us to compare the effects of crystallographic vacancies on the A and B sites of the perovskite with the influence of the copper ions substituted on the manganese site. The most original result occurs for the compounds with a small ratio Si/Cu, which display double-peaked resistivity vs. temperature curves. © 2003 Elsevier B.V. All rights reserved.

A novel hydraulic microactuator sealed by surface tension

In order to improve the power density of microactuators, recent research focuses on the applicability of fluidic power at microscale. The main encountered difficulties in the development of small fluidic actuators are related to production tolerances and assembly requirements. Furthermore, these actuators tend to comprise highly three-dimensional parts, which are incompatible with traditional microproduction technologies. This paper presents accurate production and novel assembly techniques for the development of a hydraulic microactuator. In addition, a scalable low friction seal, relying on surface tension forces, is presented. A prototype piston-type microactuator with a bore of 1 mm and a length of 13 mm is developed. Using a gallium-based surface tension seal, pressures of more than 90 kPa have been sealed without leakage. © 2005 Elsevier B.V. All rights reserved.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation. © 2013 AIP Publishing LLC.

A hybrid density functional view of native vacancies in gallium nitride.

We investigated the transition energy levels of the vacancy defects in gallium nitride by means of a hybrid density functional theory approach (DFT). We show that, in contrast to predictions from a recent study on the level of purely local DFT, the inclusion of screened exchange stabilizes the triply positive charge state of the nitrogen vacancy for Fermi energies close to the valence band. On the other hand, the defect levels associated with the negative charge states of the nitrogen vacancy hybridize with the conduction band and turn out to be energetically unfavorable, except for high n-doping. For the gallium vacancy, the increased magnetic splitting between up-spin and down-spin bands due to stronger exchange interactions in sX-LDA pushes the defect levels deeper into the band gap and significantly increases the associated charge transition levels. Based on these results, we propose the ϵ(0| - 1) transition level as an alternative candidate for the yellow luminescence in GaN.

DC current rectification using indium-gallium zinc oxide-based selfswitching diodes

Self-switching diodes have been fabricated within a single layer of indium-gallium zinc oxide (IGZO). Current-voltage (I-V) measurements show the nanometer-scale asymmetric device gave a diode-like response. Full current rectification was achieved using very narrow channel widths of 50nm, with a turn-on voltage, Von, of 2.2V. The device did not breakdown within the -10V bias range measured. This single diode produced a current of 0.1μA at 10V and a reverse current of less than 0.1nA at -10V. Also by adjusting the channel width for these devices, Von could be altered; however, the effectiveness of the rectification also changed. © 2013 IEEE.

Micronutrient niacin addition to enhance biological treatment of textile wastewater

Micronutrients play an important role in biological processes for wastewater treatment. Many industrial wastewaters lack in nutrients required for microbial growth, and this is one of the problems at many activated sludge plants treating them. In this study, the effects of the micronutrient niacin on the COD removal rates of textile wastewater, together with the effect of Mixed Liquor Suspended Solids (MLSS) on niacin, were studied. Certain improvement effects were found on the removal rates of COD, when 0.5 similar to 2.0 mg/L niacin was added to the textile wastewater. The optimal concentration of niacin was 1.0 mg/L, which was continuously added during textile wastewater treatment, and removal rates were 1.31 times compared to those of the control system. The concentration of MLSS was probably one of the factors influencing treatment efficiency, and the biological performance of treatment system could be optimized through micronutrient niacin supplements.

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10 6-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions of simultaneous negative gate bias and illumination, as observed experimentally as the NBIS effect. © 2014 AIP Publishing LLC.

Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of ΔEt 0.3 eV and with a density of state distribution as Dt(Et-j)=Dt0exp(-ΔEt/ kT)with Dt0 = 5.02 × 1011 cm-2 eV-1. Such a model is useful for developing simulation tools for circuit design. © 2014 AIP Publishing LLC.