Design and market considerations for axial flux superconducting electric machine design

In this paper, the authors investigate a number of design and market considerations for an axial flux superconducting electric machine design that uses high temperature superconductors. The axial flux machine design is assumed to utilise high temperature superconductors in both wire (stator winding) and bulk (rotor field) forms, to operate over a temperature range of 65-77 K, and to have a power output in the range from 10s of kW up to 1 MW (typical for axial flux machines), with approximately 2-3 T as the peak trapped field in the bulk superconductors. The authors firstly investigate the applicability of this type of machine as a generator in small- and medium-sized wind turbines, including the current and forecasted market and pricing for conventional turbines. Next, a study is also carried out on the machine's applicability as an in-wheel hub motor for electric vehicles. Some recommendations for future applications are made based on the outcome of these two studies. Finally, the cost of YBCO-based superconducting (2G HTS) wire is analysed with respect to competing wire technologies and compared with current conventional material costs and current wire costs for both 1G and 2G HTS are still too great to be economically feasible for such superconducting devices.

Influence of film cooling hole angles and geometries on aerodynamic loss and net heat flux reduction

Turbine design engineers have to ensure that film cooling can provide sufficient protection to turbine blades from the hot mainstream gas, while keeping the losses low. Film cooling hole design parameters include inclination angle (a), compound angle (b), hole inlet geometry, and hole exit geometry. The influence of these parameters on aerodynamic loss and net heat flux reduction is investigated, with loss being the primary focus. Low-speed flat plate experiments have been conducted at momentum flux ratios of IR=0.16, 0.64, and 1.44. The film cooling aerodynamic mixing loss, generated by the mixing of mainstream and coolant, can be quantified using a three-dimensional analytical model that has been previously reported by the authors. The model suggests that for the same flow conditions, the aerodynamic mixing loss is the same for holes with different a and b but with the same angle between the mainstream and coolant flow directions (angle k). This relationship is assessed through experiments by testing two sets of cylindrical holes with different a and b: one set with k=35 deg, and another set with k=60 deg. The data confirm the stated relationship between α, β, k and the aerodynamic mixing loss. The results show that the designer should minimize k to obtain the lowest loss, but maximize b to achieve the best heat transfer performance. A suggestion on improving the loss model is also given. Five different hole geometries (α=35.0 deg, β=0 deg) were also tested: cylindrical hole, trenched hole, fan-shaped hole, D-Fan, and SD-Fan. The D-Fan and the SD-Fan have similar hole exits to the fan-shaped hole but their hole inlets are laterally expanded. The external mixing loss and the loss generated inside the hole are compared. It was found that the D-Fan and the SD-Fan have the lowest loss. This is attributed to their laterally expanded hole inlets, which lead to significant reduction in the loss generated inside the holes. As a result, the loss of these geometries is≈50% of the loss of the fan-shaped hole at IR=0.64 and 1.44. © 2013 by ASME.

Systematic investigation on the influence of the As-4 flux on the magnetic property of (In,Cr)As quantum dots

We study the structure, optical and magnetic characteristics of self-assembled (In,Cr) As diluted magnetic semiconductor quantum dots as a function of the As-4 flux. Increasing the surface energy by increasing the As4 pressure leads to a smaller number of larger dots for a higher As-4 flux. The remanent magnetization measured at 5K also increases with increasing As-4 flux, which is attributed to the enhancement of the effective Cr content due to the As-4-rich condition. We explore the possibility of tailoring magnetism by controlling the As-4/In flux ratio without changing the Cr concentration. Furthermore, extremely low-density QDs have also been successfully grown. Copyright (C) EPLA, 2008

Analysis on the high luminous flux white light from GaN-based laser diode

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emits in the yellow region when excited by the blue laser light. At 500 mA injection current the luminous flux and the luminous efficacy were 113 lm and 44 lm/W, respectively. The relationship of the luminous flux and the luminous efficacy of the white light with an injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I'Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.

Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

High-dose ion implantation of phosphorus into 4H-SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) P(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) P(+)cm(-2). The implantations are performed at room temperature and subsequently annealed at 1500 degrees C. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500 degrees C, a reasonably low sheet resistance of 106 Omega/square is obtained at ion flux of 1.0 x 10(12) P(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).

Influences of As flux on the lattice constants, magnetic and transport properties of (Ga, Mn)As epilayers

A series of (Ga, Mn)As epilayers have been prepared on semi-insulating GaAs (001) substrates at 230 degrees C by molecular-beam epitaxy under fixed temperatures of Ga and Mn cells and varied temperatures of the As cell. By systematically studying the lattice constants, magnetic and magneto-transport properties in a self-consistent manner, we find that the concentration of As antisites monotonically increases with increasing As flux, while the concentration of interstitial Mn defects decreases with it. Such a trend sensitively affects the properties of (Ga, Mn)As epilayers. (c) 2006 Elsevier Ltd. All rights reserved.

Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux

The effect of using an indium flux during the MBE growth of GaN layers was investigated. The properties of these layers were studied using electron probe microanalysis, secondary ion mass spectroscopy, photoluminescence and cathodoluminescence. The optical properties of the GaN layers are shown to improve as compared with undoped GaN layers grown under nominally the same conditions but without an additional indium flux.

Energy spectrum and persistent currents in finite-width mesoscopic ring with radial potential barrier threading a magnetic flux through its hole

The energy spectrum and the persistent currents are calculated for a finite-width mesoscopic annulus with radial potential barrier, threading a magnetic flux through the hole of the ring. Owing to the presence of tunneling barrier, the coupling effect leads to the splitting of each radial energy subband of individual concentrical rings into two one. Thus, total currents and currents carried by single high-lying eigenstate as a function of magnetic flux exhibit complicated patterns. However, periodicity and antisymmetry of current curves in the flux still preserve.

Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD

ZnO nanorod arrays with different morphologies were grown by metalorganic chemical vapor deposition （MOCVD）. The diameters of nanorods range from 150 nm to 20 nm through changing the carrier gas flux during the growth process. Measurements such as scanning electron microscope （SEM）, X-ray diffraction （XRD）, Raman scattering and photoluminescence （pL） spectrum were employed to analyze the differences of these nanorods. It was found that when both carrier gas flux of Zn and O reactant are 1 SLM, we can obtain the best vertically aligned and uniform nanorods. Furthermore, the PL spectrum reveals a blueshift of UV emission peak, which may be assigned to the increase of surface effect.