Sinterização e caracterização de segunda fase em sistemas SnO2-ZnO

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Development of metal - SiO2 nanocomposites in a single-step process by the polymerizable complex method

This work presents the synthesis and characterization of SiO2:metal (Ni, Co, Ag, and Fe) nanocomposites processed by the polymerizable complex method. The polymeric precursor solutions obtained were characterized by means of FT-Raman and C-13 NMR spectroscopy. The results show the formation of a hybrid polymer with carbon and silicon in the macromolecule chain and the transition metal cation arrested within this polymeric chain. The nanocomposites are formed during the controlled polymeric precursor pyrolysis. The reduction of the metal cation is promoted by the CO/CO2 atmosphere resulting from the pyrolysis of the organic material. Microstructural characterization, performed by TEM and X-ray diffraction (XRD), showed that the nanocomposites are formed by metal nanoparticles embedded in a amorphous matrix formed by SiO2 and carbon. In the SiO2:Fe system, Fe3C was also detected by XRD.

WO3 and ZnO-doped SnO2 ceramics as insulating material

SnO2 ceramics doped with ZnO and WO3 were prepared by mixed oxide method. The effect of ZnO and WO3 additives could be explained by the substitution of Sn4+ by Zn2+ and W6+. The addition of WO3 inhibits the grain growth due to the segregation of SnZnWO8 and ZnWO6 at the grain boundaries without strong influence on the densification process. The electrical characterization (log E x log J) shows that the ternary system SnO2-ZnO-WO3 exhibits a very high resistivity of around 10(14) Omega M. Independently of the WO3 concentration, the electrical conductivity of the Sn02-ZnO-WO3 system is always lower than that of the undoped tin dioxide. (C) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Structural and electrical characterization of semiconducting barium-lead-titanate ceramics

BaTiO3 is usually doped to achieve the temperature stability required by device applications, as well as to obtain a large positive temperature coefficient anomaly of resistivity (PTCR). Uniform distribution of dopants among the submicron dielectric particles is the key for optimal control of grain size and microstructure to maintain a high reliability. The system Ba0.84Pb0.16TiO3 was synthesized from high purity BaCO3, TiO2, PbO oxide powders as raw materials. Sb2O3, MnSO4 and ZnO were used as dopants and Al2O3, TiO2 and SiO2 as grain growth controllers. Phase composition was analyzed by using XRD and the microstructure was investigated by SEM. EDS attached to SEM was used to analyze phase composition specially related to abnormal grain growth. Electrical resistivities were measured as a function of temperature and the PTCR effect characterized by an abrupt increase on resistivity.

Structural and microstructural behaviour of SnO2 dense ceramics doped with ZnO and WO3

SnO2-based varistors doped with ZnO and WO3 were prepared by mixed oxide method. Experimental evidence shows that the increase in ZnO amount increases the volume and microstrain of unit cell while the WO3 promotes a decrease. The effect of ZnO and WO3 additives could be explained by the substitution of Sn4+ by Zn2+ and W6+. The addition of WO3 inhibits the grain growth due to the segregation in the grain boundary without influence in the densification of the samples. Besides that, an increase in the electrical resistance of the SnO2-ZnO-WO3 system was observed independent of the WO3 concentration. (c) 2005 Elsevier B.V. All rights reserved.

Effect of the addition of ZnO seeds on the electrical proprieties of ZnO-based varistors

ZnO has the characteristic of presenting an intermediate value for the effective 3 eV barrier at room temperature. ZnO ceramics are applied in high-voltage systems or circuits. Attempts were made to reduce the number of effective barriers in the system by adding large particles of ZnO to the varistor composition. This procedure reduced the breakdown field of the varistors by values up to 90% lower than those initially obtained, and produced nonlinear coefficients as low as 20. (C) 2003 Elsevier B.V. B.V. All rights reserved.

Erbium- and ytterbium-doped sol-gel SiO2-HfO2 crack-free thick films onto silica on silicon substrate

Aware of the difficulties in applying sol-gel technology on the preparation of thin films suitable for optical devices, the present paper reports on the preparation of crack-free erbium- and ytterbium-doped silica: hafnia thick films onto silica on silicon. The film was obtained using a dispersion of silica-hafnia nanoparticles into a binder solution, spin-coating, regular thermal process and rapid thermal process. The used methodology has allowed a significant increase of the film thickness. Based on the presented results good optical-quality films with the required thickness for a fiber matching single mode waveguide were obtained using the erbium- and ytterbium-activated sol-gel silica:hafnia system. The prepared film supports two transversal electric modes at 1550 nm and the difference between the transversal electric mode and the transversal magnetic mode is very small, indicating low birefringence. Photoluminescence of the I-4(13/2) -> I-4(15/2) transition of erbium ions shows a broad band centered at 1.53 mu m with full width at a half maximum of 28 nm. Up-conversion emission was carried out under different pump laser powers, and just one transition at red region was observed. (c) 2006 Elsevier B.V. All rights reserved.

Investigation of electrical properties of tantalum doped SnO2 varistor system

Ta2O5 doped SnO2 varistor systems containing 0.5 mol% ZnO and 0.5 mol% Coo were prepared by mixed oxide method. Considering that ZnO and Coo oxides are densification additives only the SnO(2)center dot ZnO center dot CoO ceramics cannot exhibit electrical nonlinearity. A small amount of Ta2O5 improves the nonlinear properties of the samples greatly. The height and width of the defect barriers were calculated. It was found that samples doped with 0.05 mol% Ta2O5 exhibit the highest density (98.5%), the lowest electric breakdown field (E-b = 1100 V/cm) and the highest coefficient of nonlinearity (alpha = 11.5). The effect of Ta2O5 dopant could be explained by the substitution of Ta5+ by Sn4+. A grain-boundary defect barrier model for the SnO(2)center dot ZnO center dot CoO center dot Ta2O5 varistor system was also introduced. (c) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

A comparative study of thermal conductivity in ZnO- and SnO2-based varistor systems

We performed a comparative study of electrical and thermal properties of ZnO- and SnO2-based varistor. The electrical properties of commercial ZnO-based varistor are equivalent to that found in SnO2-based varistor system. In spite of this, the SnO2 showed a thermal conductivity higher than commercial samples of ZnO-based varistor, which allied with its simpler microstructure and lower dopant concentration is a remarkable result that point out to the use of this system to compete commercially with ZnO-based varistor devices.

SnO2, ZnO and related polycrystalline compound semiconductors: An overview and review on the voltage-dependent resistance (non-ohmic) feature

The present review describes mainly the history of SnO2-based voltage-dependent resistors, discusses the main characteristics of these polycrystalline semiconductor systems and includes a direct comparison with traditional ZnO-based voltage-dependent resistor systems to establish the differences and similarities, giving details of the basic physical principles involved with the non-ohmic properties in both polycrystalline systems. As an overview, the text also undertakes the main difficulties involved in processing SnO2- and ZnO-based non-ohmic systems, with an evaluation of the contribution of the dopants to the electronic properties and to the final microstructure and consequently to the system's non-ohmic behavior. However, since there are at least two review texts regarding ZnO-based systems [Levinson, L. M., and Philipp, H. R. Ceramic Bulletin 1985;64:639; Clarke, D. R. Journal of American Ceramic Society 1999;82:485], the main focus of the present text is dedicated to the SnO2-based varistor systems, although the basic physical principles described in the text are universally useful in the context of dense polycrystalline devices. However, the readers must be careful of how the microstructure heterogeneity and grain-boundary chemistry are capable to interfere in the global electrical response for particular systems. New perspectives for applications, commercialization and degradation studies involving SnO2-based polycrystalline non-ohmic systems are also outlined, including recent technological developments. Finally, at the end of this review a brief section is particularly dedicated to the presentation and discussions about others emerging non-ohmic polycrystalline ceramic devices (particularly based on perovskite ceramics) which must be deeply studied in the years to come, specially because some of these systems present combined high dielectric and non-ohmic properties. From both scientific and technological point of view these perovskite systems are quite interesting. (c) 2007 Elsevier Ltd. All rights reserved.

Microstructural development of ZnO varistor during reactive liquid phase sintering

The microstructural evolution, grain growth and densification for the varistor systems ZnO-Bi2O3 (ZB), ZnO-Bi2O3-Sb2O3 (ZBS), ZnO-Bi2O3-Sb2O3-MnO-Cr 2O3-CoO (ZBSCCM) were studied using constant heating rate sintering, scanning electron microscopy (SEM) and in situ phase formation measurement by high temperature X-ray diffraction (HT-XRD). The results showed that the densifying process is controlled by the formation and decomposition of the Zn2Bi3Sb3O14 pyrochlore (PY) phase for the ZBS and ZBSCCM systems. The addition of transition metals (ZBSCCM system) alters the formation and decomposition reaction temperatures of the pyrochlore phase and the morphology of the Zn7Sb2O12 spinel phase. Thus, the spinel grains act as inclusions and decrease the ZnO grain growth rate. Spinel grain growth kinetics in the ZBSCCM system showed an n value of 2.6, and SEM and HT-XRD results indicate two grain growth mechanisms based on coalescence and Ostwald ripening. © 1996 Chapman & Hall.

Effects of superficial liming and silicate application on soil fertility and crop yield under rotation

Soil acidity and low natural fertility are the main problems for grain production in Brazilian 'cerrado'. Although lime has been the most applied source for soil correction, silicate may be an alternative material due to its lower solubility and Si supply, which is beneficial to several crops. This work aimed to evaluate the efficiency of superficial liming and calcium/magnesium silicate application on soil chemical attributes, plant nutrition, yield components and final yield of a soybean/white oat/maize/bean rotation under no-tillage system in a dry-winter region. The experiment was conducted under no tillage system in a deep acid clayey Rhodic Hapludox, Botucatu-SP, Brazil. The design was the completely randomized block with sixteen replications. Treatments consisted of two sources for soil acidity correction (dolomitic lime: ECC=90%, CaO=36% and MgO=12%; calcium/magnesium silicate: ECC=80%, CaO=34%, MgO=10% and SiO2=22%) applied in October 2006 to raise base saturation up to 70% and a control, with no soil correction. Soybean and white oat were sown in 2006/2007 as the main crop and off-season, respectively. Maize and bean were cropped in the next year (2007/2008). Products from silicate dissociation reach deeper soil layers after 18months from the application, compared to liming. Additionally, silicate is more efficient than lime to increasing phosphorus availability and reducing toxic aluminum. Such benefits in soil chemical attributes were only evidenced during bean cropping, when grain yield was higher after silicate application comparatively to liming. Both correction sources were improved mineral nutrition of all the other crops, mainly Ca and Mg levels and agronomical characteristics, reflecting in higher yield. © 2012 Elsevier B.V.

Degradation analysis of the SnO2 and ZnO-based varistors using electrostatic force microscopy

The degradation phenomena of ZnO and SnO2-based varistors were investigated for two different degradation methods: DC voltage at increased temperature and degradation with 8/20 μs pulsed currents (lightning type). Electrostatic force microscopy (EFM) was used to analyze the surface charge accumulated at grain-boundary regions before and after degradation. Before the degradation process, 85% of the barriers are active in the SnO2 system, while the ZnO system presents only 30% effective barriers. Both systems showed changes in the electrical behavior when degraded with pulses. In the case of the ZnO system, the behavior after pulse degradation was essentially ohmic due to the destruction of barriers (about 99% of the interfaces are conductive). After the degradation with 8/20 μs pulsed currents, the SnO2 system still presents nonohmic behavior with a significant decrease in the quantity of effective barriers (from 85% to 5%). However, when the degradation is accomplished with continuous current, the SnO2 system exhibits minimum variation, while the ZnO system degrades from 30% to 5%. This result indicates the existence of metastable defects of low concentration and/or low diffusion in the SnO2 system. High energy is necessary to degrade the barriers due to defect annihilation in the SnO2 system. © 2013 The American Ceramic Society.

The application of a surface response methodology in the solar/UV-induced degradation of dairy wastewater using immobilized ZnO as a semiconductor

An Advanced Oxidation Process (AOPs) was carried out in this study with the use of immobilized ZnO and solar/UV as an energy source to degrade dairy wastewater. The semibatch reactor system consisted of metal plate of 800 × 250 mm and a glass tank. The reaction time was of 3 h for 3 L of dairy wastewater. Experiments were performed based on a surface response methodology in order to optimize the photocatalytic process. Degradation was measured in percentage terms by total organic carbon (TOC). The entry variables were ZnO coating thickness and pH, using three levels of each variable. The optimized results showed a TOC degradation of 31.7%. Optimal parameters were metal-plate coating of 100 m of ZnO and pH of 8.0. Since solar/UV is a constant and free energy source in most tropical countries, this process tends to suggest an interesting contribution in dairy wastewater treatment, especially as a pretreatment and the optimal conditions to guarantee a better efficiency of the process. © 2013 Gisella R. Lamas Samanamud et al.

Caracterização de propriedades de vidros polarizados do sistema P2O5 – B2O3 – CaO – TiO2

Pós-graduação em Ciência dos Materiais - FEIS