Understanding thickness effects in thin film capacitors

Pulsed Laser Deposition (PLD) was used to make Au/(Ba0.5Sr0.5)TiO3/(La0.5Sr0.5) CoO3/MgO thin film capacitor structures. Functional properties were studied with changing BST thickness from similar to1265 nm to similar to63 nm. The dielectric constant was found to decrease, and migration of T-m (the temperature at which the dielectric constant is maximum) to lower temperatures occurred as thickness was reduced. Curie-Weiss plots of the as-obtained dielectric data, indicated that the Curie temperature was also systemmatically progressively depressed. Further, fitting to expressions previously used to describe diffuse phase transitions suggested increased diffuseness in transformation behaviour as film thickness decreased. This paper discusses the care needed in interpreting the observations given above. We make particular distinction between the apparent Curie-temperature derived from Curie-Weiss plots of as-measured data, and the inherent Curie temperature determined after correction for the interfacial capacitance. We demonstrate that while the apparent Curie temperature decreases as thickness decreases, the inherent Curie temperature is thickness independent. Thickness-invariant phase transition behaviour is confirmed from analysis of polarisation loops, and from examination of the temperature dependence of the loss-tangent. We particularly note that correction of data for interfacial capacitance does not alter the position of T-m. We must therefore conclude that the position of T-m is not related simply to phase transformation behaviour in BST thin films.

Maximum of dielectric permittivity caused by structural transition in ferroelectric BaTiO3-SrTiO3 superlattices

We invoke the onset of dislocations along the BaTiO3-SrTiO3 interface as reported by Wunderlich et al. to explain the non-monotonic behaviour of the dielectric permittivity as a function of superlattice periodicity and the less than four-fold in-plane symmetry at the dielectric maximum. At a periodicity of about 10/10, depending on composition and growth mechanism, several groups report a maximum of dielectric permittivity. In addition to that we observe in-plane symmetry less than tetragonal for 10/10 superlattices by HR-XRD, in contrast to initial low-resolution data from Tabata et al. thus challenging the assumption of unrelaxed strain all the way through the superlattice. The aim of this article is to link both effects to the increasing volume fraction of conducting layers close to the interface in series with the superlattice layers.

Switching dynamics in ferroelectric thin films: An experimental survey

We have conducted a broad survey of switching behavior in thin films of a range of ferroelectric materials, including some materials that are not typically considered for FeRAM applications, and are hence less studied. The materials studied include: strontium bismuth tantalate (SBT), barium strontium titanate (BST), lead zicronate titanate (PZT), and potassium nitrate (KNO3). Switching in ferroelectric thin films is typically considered to occur by domain nucleation and growth. We discuss two models of frequency dependence of coercive field, the Ishisbashi-Orihara theory where the limiting step is domain growth and the model of Du and Chen where the limiting step is nucleation. While both models fit the data fairly well the temperature dependence of our results on PZT and BST suggest that the nucleation model of Du and Chen is more appropriate for the experimental results that we have obtained.

Spatially resolved diagnostics on a micro atmospheric pressure plasma jet

Despite enormous potential for technological applications, fundamentals of stable non-equilibrium micro-plasmas at ambient pressure are still only partly understood. Micro-plasma jets are one sub-group of these plasma sources. For an understanding it is particularly important to analyse transport phenomena of energy and particles within and between the core and effluent of the discharge. The complexity of the problem requires the combination and correlation of various highly sophisticated diagnostics yielding different information with an extremely high temporal and spatial resolution. A specially designed rf microscale atmospheric pressure plasma jet (µ-APPJ) provides excellent access for optical diagnostics to the discharge volume and the effluent region. This allows detailed investigations of the discharge dynamics and energy transport mechanisms from the discharge to the effluent. Here we present examples for diagnostics applicable to different regions and combine the results. The diagnostics applied are optical emission spectroscopy (OES) in the visible and ultraviolet and two-photon absorption laser-induced fluorescence spectroscopy. By the latter spatially resolved absolutely calibrated density maps of atomic oxygen have been determined for the effluent. OES yields an insight into energy transport mechanisms from the core into the effluent. The first results of spatially and phase-resolved OES measurements of the discharge dynamics of the core are presented.

Optimisation of trench isolated bipolar transistors on SOI substrates by 3D electro-thermal simulations

This paper provides a comprehensive analysis of thermal resistance of trench isolated bipolar transistors on SOI substrates based on 3D electro-thermal simulations calibrated to experimental data. The impact of emitter length, width, spacing and number of emitter fingers on thermal resistance is analysed in detail. The results are used to design and optimise transistors with minimum thermal resistance and minimum transistor area. (c) 2007 Elsevier Ltd. All rights reserved.

Source/drain extension region engineering in nanoscale double gate SOI MOSFETs: Novel design methodology for low-voltage analog applications

The present paper proposes for the first time, a novel design methodology based on the optimization of source/drain extension (SDE) regions to significantly improve the trade-off between intrinsic voltage gain (A(vo)) and cut-off frequency (f(T)) in nanoscale double gate (DG) devices. Our results show that an optimally designed 25 nm gate length SDE region engineered DG MOSFET operating at drain current of 10 mu A/mu m, exhibits up to 65% improvement in intrinsic voltage gain and 85% in cut-off frequency over devices designed with abrupt SIDE regions. The influence of spacer width, lateral source/drain doping gradient and symmetric as well as asymmetrically designed SDE regions on key analog figures of merit (FOM) such as transconductance (g(m)), transconductance-to-current ratio (g(m)/I-ds), Early voltage (V-EA), output conductance (g(ds)) and gate capacitances are examined in detail. The present work provides new opportunities for realizing future low-voltage/low-power analog circuits with nanoscale SDE engineered DG MOSFETs. (C) 2007 Elsevier B.V. All rights reserved.

Scaling issues for analogue circuits using Double Gate SOI transistors

This work presents a systematic analysis on the impact of source-drain engineering using gate

Unusual voltammetry of the reduction of O-2 in [C(4)dmim][N(Tf)(2)] reveals a strong interaction of O-2(center dot-) with the [C(4)dmim](+) cation

Voltammetric studies of the reduction of oxygen in the room temperature ionic liquid [C(4)dmim][N(Tf)(2)] have revealed a significant positive shift in the back peak potential, relative to that expected for a simple electron transfer. This shift is thought to be due to the strong association of the electrogenerated superoxide anion with the solvent cation. In this work we quantitatively simulate the microdisc electrode voltammetry using a model based upon a one-electron reduction followed by a reversible chemical step, involving the formation of the [C(4)dmim](+)center dot center dot center dot O-2(center dot-) ion-pair, and in doing so we extract a set of parameters completely describing the system. We have simulated the voltammetry in the absence of a following chemical step and have shown that it is impossible to simultaneously fit both the forward and reverse peaks. To further support the parameters extracted from fitting the experimental voltammetry, we have used these parameters to independently simulate the double step chronoamperometric response and found excellent agreement. The parameters used to describe the association of the O-2(center dot-) with the [C(4)dmim](+) were k(f) = 1.4 x 10(3) s(-1) for the first-order rate constant and K-eq = 25 for the equilibrium constant.

The electrochemical reduction of hydrogen sulfide on platinum in several room temperature ionic liquids

The electrochemical reduction of I atm hydrogen sulfide gas (H2S) has been studied at a platinum microelectrode (10 mu m diameter) in five room temperature ionic liquids (RTILs): [C(2)mim][NTf2], [C(4)mpyrr][NTf2], [C(4)mim][OTf], [C(4)mim][NO3] and [C(4)mim]][PF6] (where [C(n)mim](+) = 1-alkyl-3-methylimidazolium, [NTf2](-) = bis(trifluoromethylsulfonyl)imide, [C(4)mpyrr](+) = N-butyl-N-methylpyrrolidinium, [OTf](-) = trifluoromethlysulfonate, [NO3](-) = nitrate, and [PF6](-) = hexafluorophosphate). In all five RTILs, a chemically irreversible reduction peak was observed on the reductive sweep, followed by one or two oxidative peaks on the reverse scan. The oxidation peaks were assigned to the oxidation of SH- and adsorbed hydrogen. In addition, a small reductive peak was observed prior to the large wave in [C(2)mim]][NTf2] only, which may be due to the reduction of a sulfur impurity in the gas. Potential-step chronoamperometry was carried out on the reduction peak of H2S, revealing diffusion coefficients of 3.2, 4.6, 2.4, 2.7, and 3.1 x 10(-11) m(2) s(-1) and solubilities of 529, 236, 537, 438, and 230 mM in [C(2)mim][NTf2], [C(4)mpyrr][NTf2], [C(4)mim][OTf], [C(4)mim][NO3], and [C(4)mim]][PF6], respectively. The solubilities of H2S in RTILs are much higher than those reported in conventional molecular solvents, suggesting that RTILs may be very favorable gas sensing media for H2S detection.

Electroreduction of sulfur dioxide in some room-temperature ionic liquids

The mechanism of sulfur dioxide reduction at a platinum microelectrode was investigated by cyclic voltammetry in several room-temperature ionic liquids (RTILs)-[C(2)mim][NTf2], [C(4)mim][BF4], [C(4)mim][NO3], [C(4)mim][PF6], and [C(6)mim][Cl] where [C(2)mim] is 1-ethyl-3-methylimidazolium, [C(4)mim] is 1-butyl-3-methylimidazolium, [C(6)mim] is 1-hexyl-3-methylimidazolium, and [NTf2] is bis(trifluoromethylsufonyl)imide-with special attention paid to [C(4)mim][NO3] because of the well-defined voltammetry, high solubility, and relatively low diffusion coefficient of SO2 obtained in that ionic liquid. A cathodic peak is observed in all RTILs between -2.0 and -1.0 V versus a silver quasi-reference electrode. In [C(4)mim][NO3], the peak appears at -1.0 V, and potential step chronoamperometry was used to determine that SO2 has a very high solubility of 3100 (+/-450) mM and a diffusion coefficient of 5.0 (+/-0.8) x 10(-10) m(2) s(-1) in that ionic liquid. On the reverse wave, up to four anodic peaks are observed at ca. -0.4, -0.3, -0.2, and 0.2 V in [C(4)mim][NO3]. The cathodic wave is assigned to the reduction of SO2 to its radical anion, SO2-center dot. The peaks at -0.4 and -0.2 V are assigned to the oxidation of unsolvated and solvated SO2-center dot, respectively. The peak appearing at 0.2 V is assigned to the oxidation of either S2O42- or S2O4-center dot. The activation energy for the reduction of SO2 in [C(4)mim][NO3] was measured to be 10 (+/-2) kJ mol(-1) using chronoamperometric data at different temperatures. The stabilizing interaction of the solvent with the reduced species SO2-center dot leads to a different mechanism than that observed in conventional aprotic solvents. The high sensitivity of the system to SO2 also suggests that [C(4)mim][NO3] may be a viable solvent in gas sensing applications.

Mechanistic studies of the electro-oxidation pathway of ammonia in several room-temperature ionic liquids

A mechanistic study of the direct oxidation of ammonia has been reported in several room-temperature ionic liquids (RTILs), namely, [C(4)mim][BF4], [C(4)mim][OTf], [C(2)mim][NTf2], [C(4)mim][NTf2], and [C(4)mim][PF6], on a 10 mu m diameter Pt microdisk electrode. In four of the RTILs studied, the cyclic voltammetric analysis suggests that ammonia is initially oxidized to nitrogen, N-2, and protons, which are transferred to an ammonia molecule, forming NH4+ via the protonation of the anion(s) (A(-)). In contrast, NH4+ is formed first in [C(4)mim][PF6], followed by the protonated anion(s), HA. In all five RTILs, both HA and NH4+ are reduced at the electrode surface, forming hydrogen gas, which is then oxidized. The effect of changing the RTIL anion is discussed, and this may have implications in the defining of pK(a) in RTIL media. This work also has implications in the possible amperometric sensing of ammonia gas.

First-principles study of oxygenates on Co surfaces in Fischer-Tropsch synthesis

Extensive density function theory calculations are performed to study the mechanism of the formation of aldehyde and alcohol on Co surfaces in Fischer-Tropsch synthesis, a challenging issue in heterogeneous catalysis. Three possible pathways for the production of formaldehyde and methanol on flat and stepped Co(0001) surfaces are investigated: (i) CO + 4H -> CHO + 3H -> CH2O + 2H -> CH3O + H -> CH3OH; (ii) CO + 4H -> COH + 3H -> CHOH + 2H -> CH2OH + H -> CH3OH; and (iii) the coupling reactions of CH2 + O -> CH2O and CH3 + OH -> CH3OH. It is found that these pathways are generally favored at step sites, and the preferred mechanism is pathway (i) via CHO. Furthermore, the three traditional chain growth mechanisms in Fischer-Tropsch synthesis are semi quantitatively compared and discussed. Our results suggest that the two mechanisms involving oxygenate intermediates (the CO-insertion and hydroxycarbene mechanisms) are less important than the carbene mechanism in the production of long chain hydrocarbons. However, the CO-insertion mechanism may be responsible for the production of long-chain oxygenates.