960 resultados para DC current injection


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The current power grid is on the cusp of modernization due to the emergence of distributed generation and controllable loads, as well as renewable energy. On one hand, distributed and renewable generation is volatile and difficult to dispatch. On the other hand, controllable loads provide significant potential for compensating for the uncertainties. In a future grid where there are thousands or millions of controllable loads and a large portion of the generation comes from volatile sources like wind and solar, distributed control that shifts or reduces the power consumption of electric loads in a reliable and economic way would be highly valuable.

Load control needs to be conducted with network awareness. Otherwise, voltage violations and overloading of circuit devices are likely. To model these effects, network power flows and voltages have to be considered explicitly. However, the physical laws that determine power flows and voltages are nonlinear. Furthermore, while distributed generation and controllable loads are mostly located in distribution networks that are multiphase and radial, most of the power flow studies focus on single-phase networks.

This thesis focuses on distributed load control in multiphase radial distribution networks. In particular, we first study distributed load control without considering network constraints, and then consider network-aware distributed load control.

Distributed implementation of load control is the main challenge if network constraints can be ignored. In this case, we first ignore the uncertainties in renewable generation and load arrivals, and propose a distributed load control algorithm, Algorithm 1, that optimally schedules the deferrable loads to shape the net electricity demand. Deferrable loads refer to loads whose total energy consumption is fixed, but energy usage can be shifted over time in response to network conditions. Algorithm 1 is a distributed gradient decent algorithm, and empirically converges to optimal deferrable load schedules within 15 iterations.

We then extend Algorithm 1 to a real-time setup where deferrable loads arrive over time, and only imprecise predictions about future renewable generation and load are available at the time of decision making. The real-time algorithm Algorithm 2 is based on model-predictive control: Algorithm 2 uses updated predictions on renewable generation as the true values, and computes a pseudo load to simulate future deferrable load. The pseudo load consumes 0 power at the current time step, and its total energy consumption equals the expectation of future deferrable load total energy request.

Network constraints, e.g., transformer loading constraints and voltage regulation constraints, bring significant challenge to the load control problem since power flows and voltages are governed by nonlinear physical laws. Remarkably, distribution networks are usually multiphase and radial. Two approaches are explored to overcome this challenge: one based on convex relaxation and the other that seeks a locally optimal load schedule.

To explore the convex relaxation approach, a novel but equivalent power flow model, the branch flow model, is developed, and a semidefinite programming relaxation, called BFM-SDP, is obtained using the branch flow model. BFM-SDP is mathematically equivalent to a standard convex relaxation proposed in the literature, but numerically is much more stable. Empirical studies show that BFM-SDP is numerically exact for the IEEE 13-, 34-, 37-, 123-bus networks and a real-world 2065-bus network, while the standard convex relaxation is numerically exact for only two of these networks.

Theoretical guarantees on the exactness of convex relaxations are provided for two types of networks: single-phase radial alternative-current (AC) networks, and single-phase mesh direct-current (DC) networks. In particular, for single-phase radial AC networks, we prove that a second-order cone program (SOCP) relaxation is exact if voltage upper bounds are not binding; we also modify the optimal load control problem so that its SOCP relaxation is always exact. For single-phase mesh DC networks, we prove that an SOCP relaxation is exact if 1) voltage upper bounds are not binding, or 2) voltage upper bounds are uniform and power injection lower bounds are strictly negative; we also modify the optimal load control problem so that its SOCP relaxation is always exact.

To seek a locally optimal load schedule, a distributed gradient-decent algorithm, Algorithm 9, is proposed. The suboptimality gap of the algorithm is rigorously characterized and close to 0 for practical networks. Furthermore, unlike the convex relaxation approach, Algorithm 9 ensures a feasible solution. The gradients used in Algorithm 9 are estimated based on a linear approximation of the power flow, which is derived with the following assumptions: 1) line losses are negligible; and 2) voltages are reasonably balanced. Both assumptions are satisfied in practical distribution networks. Empirical results show that Algorithm 9 obtains 70+ times speed up over the convex relaxation approach, at the cost of a suboptimality within numerical precision.

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We have found that the optical power of a laser diode (LD) does not change with the injected light intensity that is modulated when its injection current is at some specific values. The amplitude of optical power change of the LD varies periodically with the increase of the injection current. It is made clear through theoretical analysis that these phenomena are caused by gain compression and interband carrier absorption of the LD that depend on longitudinal mode competition, bandgap-shrinkage effects, thermal conduction, and so on. Our experimental results make it easy to eliminate optical power change of LDs. We only need to choose a proper value of the injection current. (c) 2005 Optical Society of America.

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The effects of oxygen partial pressure on the structure and photoluminescence (PL) of ZnO films were studied. The films were prepared by direct current (DC) reactive magnetron sputtering with various oxygen concentrations at room temperature. With increasing oxygen ratio, the structure of films changes from zinc and zinc oxide phases, single-phase ZnO, to the (002) orientation, and the mechanical stresses exhibit from tensile stress to compressive stress. Films deposited at higher oxygen pressure show weaker emission intensities, which may result from the decrease of the oxygen vacancies and zinc interstitials in the film. This indicates that the emission in ZnO film originates from the oxygen vacancy and zinc interstitial-related defects. From optical transmittance spectra of ZnO films, the plasma edge shifts towards the shorter wavelength with the improvement of film stoichiometry. (C) 2004 Elsevier B.V. All rights reserved.

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O estudo da dinâmica de crescimento em espécies arbóreas permite melhor compreender a adaptação de uma espécie ao ambiente em que se desenvolve. Dados dessa natureza ainda são escassos no Brasil considerando-se a diversidade de espécies e fitofisionomias existentes. Esse tipo de estudo tem sido apontado como de grande relevância principalmente diante das situações atuais de desmatamento e mudanças climáticas, que exigem recuperação de áreas degradadas e prospectar como as espécies nativas sobreviveram diante deste ambiente de aceleradas mudanças. Nesta perspectiva, o objetivo deste trabalho foi investigar a dinâmica de crescimento de Tabebuia rosea, por meio do monitoramento mensal da fenologia apical e cambial caulinar e dos teores dos pigmentos fotossintetizantes: clorofilas a, b, totais e carotenoides. Os resultados obtidos foram correlacionados entre si e também com a sazonalidade das variáveis ambientais: temperatura, precipitação e fotoperíodo. No que se refere aos teores dos pigmentos fotossintetizantes, foi também avaliada as oscilações observadas nas folhas obtidas nas orientações geográficas: norte, sul, leste e oeste. O trabalho foi desenvolvido no Campus da Universidade do Estado do Rio de Janeiro, RJ, Brasil. A fenologia dos ápices caulinares foi acompanhada mensalmente a partir de observações qualitativas e quantitativas em 15 indivíduos. As amostras contendo a zona cambial foram obtidas por método não destrutivo e processadas segundo as técnicas usuais em histologia vegetal. A extração dos pigmentos fotossintéticos foi realizada em acetona 80%, com posterior centrifugação e análise ao espectrofotômetro em diferentes comprimentos de onda. Tabebuia rosea apresentou aumento na largura da zona cambial em número de camadas celulares e em micrômetros, diminuição do diâmetro radial da célula inicial fusiforme e aumento em micrômetros da camada de células em processo de alongamento e diferenciação do xilema secundário no mesmo período em que a copa das árvores estava ocupada por folhas adultas e com os teores mais elevados de clorofilas nas folhas, coincidindo com o período em que as variáveis ambientais apresentaram-se elevadas, corroborando os resultados já obtidos para outras espécies nativas da Mata Atlântica se desenvolvendo no estado do Rio de Janeiro. A maior concentração de carotenoides foi observada no período em que as variáveis ambientais apresentavam índices elevados e as plantas estavam mais expostas à radiação luminosa, possivelmente em função de um maior investimento em fotoproteção. Cabe destacar que o lado oeste da copa das árvores mostrou uma tendência em apresentar maiores concentrações dos pigmentos fotossintéticos estudados, resultado ainda não observado na literatura até o momento, o que pode ser uma estratégia da espécie em compensar níveis baixos de radiação solar com acúmulo de clorofilas.

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Problem of DC link size in a stiff voltage-source inverter for electric drive is described in the paper. Advantages of advanced film capacitor technology over conventional one for DC link application are reviewed. Conventional DC link capacitor selection methods are questioned in view of advanced capacitor technology utilization in stiff voltage-source inverter. For capacitor selection maximum ripple rms current point is shown. DC link ripple current spectrum analysis under modern PWM techniques is presented. Some capacitor selection recommendations are given. The analysis has been aided greatly by computer modeling in PSpice. ©2005 IEEE.

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In order to design a High Temperature Superconducting (HTS) machine that is able to operate safely and reliably, studies on the characterization of Second Generation (2G) HTS tapes are of paramount importance. This paper presents an experimental setup to measure critical current of 2G HTS tapes in high DC magnetic fields (up to 5 Tesla) with an AC current ripple superimposed, as well as various temperatures ranging from 25 K to 77 K. The 2G tape measured is the SGS12050 coated conductor made by SuperPower. The critical current is measured by a flux vector with reference to the widest sample face from 0 to 90 degrees in 10 degree steps. Smaller steps are required close to 0 . A Variable Temperature Insert (VTI) is utilized to control temperature change. © 2010 IEEE.

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The southeastern region of Yunnan province is a key site for drug trafficking and HIV-1 infection spread from the west of Yunnan and Laos to southeastern China. To investigate the prevalence of HIV-1 infection and hepatitis C virus (HCV) coinfection among injection drug users (IDUs) in southeastern Yunnan, three cohorts of 285 addicts, including 242 IDUs and 43 oral drug users, living in the cities of Gejiu and Kaiyuan and the county of Yanshan were studied. HIV-1 and HCV infections were detected by enzyme-linked immunosorbent assay and/or polymerase chain reaction. Data on the age, sex, risk behavior, drug use history, employment, ethnic background, and marriage status were obtained by interview. The overall prevalence of HIV-1 infection was 71.9%. The rate of HCV coinfection among 138 HIV-1-infected IDUs was 99.3%. Most HIV-infected IDUs were 20 to 35 years old (86.7%) and were ethnic Han (75.9%), suggesting that the epidemic in Yunnan is no longer confined to non-Han ethnic minorities, HIV prevalence in female IDUs (81.2%) was significantly higher than in male IDUs (68.2%) (p <.05). The prevalence of HIV infection reached 68.4% after 1 year of injection drug use. Needle/syringe sharing is the major high risk factor for the spread of HIV-1 and HCV infections. Large-scale educational campaigns are urgently needed to reduce the spread of HIV and HCV infection in these regions.

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This paper reports the results of an experimental investigation of the performance of two types of magnetic screens assembled from YBa2Cu3O7-d (YBCO) coated conductors. Since effective screening of the axial DC magnetic field requires the unimpeded flow of an azimuthal persistent current, we demonstrate a configuration of a screening shell made out of standard YBCO coated conductor capable to accomplish that. The screen allows the persistent current to flow in the predominantly azimuthal direction at a temperature of 77 K. The persistent screen, incorporating a single layer of superconducting film, can attenuate an external magnetic field of up to 5 mT by more than an order of magnitude. For comparison purposes, another type of screen which incorporates low critical temperature quasi-persistent joints was also built. The shielding technique we describe here appears to be especially promising for the realization of large scale high-Tc superconducting screens.

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In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this design would have on 24 mm diameter GCTs, and to clarify the mechanisms that limit safe switching at different dc-link voltages. The 3-D simulation results show that the HPT design can increase the maximum controllable current in 24 mm diameter devices beyond the realm of GCT switching, known as the hard-drive limit. It is proposed that the maximum controllable current becomes independent of the dc-link voltage for the complete range of operating voltage. © 1980-2012 IEEE.

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This paper reports on an extensive analysis of the electroluminescence characteristics of InGaN-based LEDs with color-coded structure, i.e., with a triple quantum well structure in which each quantum well has a different indium content. The analysis is based on combined electroluminescence measurements and two-dimensional simulations, carried out at different current and temperature levels. Results indicate that (i) the efficiency of each of the quantum wells strongly depends on device operating conditions (current and temperature); (ii) at low current and temperature levels, only the quantum well closer to the p-side has a significant emission; (iii) emission from the other quantum wells is favored at high current levels. The role of carrier injection, hole mobility, carrier density and non-radiative recombination in determining the relative intensity of the quantum wells is discussed in the text. © 2013 The Japan Society of Applied Physics.

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Pulses of 15 psec duration were generated by an injection laser with an external dispersive resonator operating in the active mode-locking regime. This regime was attained by subjecting the laser diode to a current of high frequency equal to the intermode interval in the external resonator. The duration of the pulses was determined by an autocorrelation method in which the second harmonic was generated in an LiIO//3 crystal.

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A semicrystalline composite, 3, 4, 9, 10 perylenetetracarboxylic dianhydride (PTCDA) doped N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (NPB), has been fabricated and characterized. An organic light-emitting diode using such a composite in hole injection exhibits the improved performance as compared with the reference device using neat NPB in hole injection. For example, at a luminance of 2000 cd/m(2), the former device gives a current efficiency of 2.0cd/A, higher than 1.6cd/A obtained from the latter device. Furthermore, the semicrystalline composite has been shown thermally to be more stable than the neat NPB thin film, which is useful for making organic light emitting diodes with a prolonged lifetime.

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Organic light emitting diodes employing magnesium doped electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride (Mg: PTCDA) as electron injection layer and silver as cathode were demonstrated. As compared to Mg: Ag cathode, the combination of the Mg: PTCDA layer and silver provided enhanced electron injection into tris (8-quinolinolato) aluminium. The device with 1: 2 Mg: PTCDA and Ag showed an increase of about 12% in the maximum current efficiency, mainly due to the improved hole-electron balance, and an increase of about 28% in the maximum power efficiency, as compared to the control device using Mg: Ag cathode. The properties of Mg: PTCDA composites were studied as well.

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Bright organic electroluminescent devices are developed using a metal-doped organic layer intervening between the cathode and the emitting layer. The typical device structure is a glass substrate/indium-tin oxide (ITO)/copper phthalocyanine (CuPc)/NN'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)/Tris(8-quinolinolato) aluminum(Alq(3))/Mg-doped CuPc/Ag. At a driving voltage of 11 V, the device with a layer of Mg-doped CuPc (1:2 in weight) shows a brightness of 4312 cd/m(2) and a current efficiency of 2.52 cd/A, while the reference device exhibits 514 cd/m(2) and 1.25 cd/A.

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High-quality AlGaN/GaN high electron mobility transistor (HEMT) structures were grown by metalorganic chemical vapor deposition (MOCVD) on 2-in. sapphire substrates. Two-dimensional electron gas (2DEG) mobility of 1410 cm(2)/Vs and concentration of 1.0X10(13) CM-2 are obtained at 295 K from the HEMT structures, whose average sheet resistance and sheet resistance uniformity are measured to be about 395 Omega/sq and 96.65% on 2-in. wafers, respectively. AlGaN/GaN HEMTs with 0.8 mu m gate length and 0.2 mm gate width were fabricated and characterized using the grown HEMT structures. Maximum current density of 0.9 A/ mm, peak extrinsic transconductance of 290 mS/mm, unity cutoff frequency (f(T)) of 20 GHz and maximum oscillation frequency (f(max) of 46 GHz are achieved. These results represent significant improvements over the previously fabricated devices with the same gate length, which are attributed to the improved performances of the MOCVD-grown HEMT structures. (c) 2005 Elsevier Ltd. All rights reserved.