LiNbO3：Cr：Cu晶体吸收特性及非挥发全息存储研究

研究了LiNbO3：Cr：Cu晶体的吸收特性，发现LiNbO3：Cr：Cu（含0．14wt．％Cr2O3和0．011wt．％CuO）晶体存在两个明显的吸收峰，中心波长分别位于480nm和660nm；随着Cr的含量逐渐减小，Cu的含量逐渐增大，短波段不存在明显吸收峰，掺Cr的含量越大，中心波长在660nm处的吸收越大；633nm红光虽然位于中心波长为660nm的吸收峰内，但它无助于光折变过程．分别采用390nm紫外光和488nm蓝光作为敏化光，514nm绿光作为记录光的记录方案，实现了非挥发全息记录，掺入适

Microwave dynamics of quasiparticles and critical fields in superconducting films

The microwave response of the superconducting state in equilibrium and non-equilibrium configurations was examined experimentally and analytically. Thin film superconductors were mostly studied in order to explore spatial effects. The response parameter measured was the surface impedance.

For small microwave intensity the surface impedance at 10 GHz was measured for a variety of samples (mostly Sn) over a wide range of sample thickness and temperature. A detailed analysis based on the BCS theory was developed for calculating the surface impedance for general thickness and other experimental parameters. Experiment and theory agreed with each other to within the experimental accuracy. Thus it was established that the samples, thin films as well as bulk, were well characterised at low microwave powers (near equilibrium).

Thin films were perturbed by a small dc supercurrent and the effect on the superconducting order parameter and the quasiparticle response determined by measuring changes in the surface resistance (still at low microwave intensity and independent of it) due to the induced current. The use of fully superconducting resonators enabled the measurement of very small changes in the surface resistance (< 10^-9 Ω/sq.). These experiments yield information regarding the dynamics of the order parameter and quasiparticle systems. For all the films studied the results could be described at temperatures near T_c by the thermodynamic depression of the order parameter due to the static current leading to a quadratic increase of the surface resistance with current.

For the thinnest films the low temperature results were surprising in that the surface resistance decreased with increasing current. An explanation is proposed according to which this decrease occurs due to an additional high frequency quasiparticle current caused by the combined presence of both static and high frequency fields. For frequencies larger than the inverse of the quasiparticle relaxation time this additional current is out of phase (by π) with the microwave electric field and is observed as a decrease of surface resistance. Calculations agree quantitatively with experimental results. This is the first observation and explanation of this non-equilibrium quasiparticle effect.

For thicker films of Sn, the low temperature surface resistance was found to increase with applied static current. It is proposed that due to the spatial non-uniformity of the induced current distribution across the thicker films, the above purely temporal analysis of the local quasiparticle response needs to be generalised to include space and time non-equilibrium effects.

The nonlinear interaction of microwaves arid superconducting films was also examined in a third set of experiments. The surface impedance of thin films was measured as a function of the incident microwave magnetic field. The experiments exploit the ability to measure the absorbed microwave power and applied microwave magnetic field absolutely. It was found that the applied surface microwave field could not be raised above a certain threshold level at which the absorption increased abruptly. This critical field level represents a dynamic critical field and was found to be associated with the penetration of the app1ied field into the film at values well below the thermodynamic critical field for the configuration of a field applied to one side of the film. The penetration occurs despite the thermal stability of the film which was unequivocally demonstrated by experiment. A new mechanism for such penetration via the formation of a vortex-antivortex pair is proposed. The experimental results for the thinnest films agreed with the calculated values of this pair generation field. The observations of increased transmission at the critical field level and suppression of the process by a metallic ground plane further support the proposed model.

Ultrafast double pulses ablation of Cr film on glass

Ultrafast lasers ablation of Cr film was investigated by using double-pulse method. Experimental results show that there exists a temporal ablation window effect with each of the double pulses adjusted just smaller than the threshold. When the delay between the double pulses is within the order of 400 ps, the ablation of Cr film could happen. When the delay between the double pulses is beyond the order of 400 ps, the ablation of Cr film would not happen, and the reflectivity from the surface of the Cr film shows a sharp rise at the same time. The two-temperature model was developed into the form of double pulses to explain the experimental phenomena. Furthermore, microbump structures were formed on the surface of Cr film after ablation by ultrafast double pulses. Their heights exhibit an obvious drop between 1 and 10 ps double pulses delay, which is involved with the electron-phonon coupling process according to the numerical simulation. These results should be helpful for understanding the dynamic processes during ultrafast lasers ablation of metal films. (C) 2008 Elsevier B.V. All rights reserved.

Digital Quantum Rabi and Dicke Models in Superconducting Circuits

We propose the analog-digital quantum simulation of the quantum Rabi and Dicke models using circuit quantum electrodynamics (QED). We find that all physical regimes, in particular those which are impossible to realize in typical cavity QED setups, can be simulated via unitary decomposition into digital steps. Furthermore, we show the emergence of the Dirac equation dynamics from the quantum Rabi model when the mode frequency vanishes. Finally, we analyze the feasibility of this proposal under realistic superconducting circuit scenarios.

Magnet loturak: bezero-zerbitzari API baten garapena

Dokumentu honek magnet lotura eta web API arloak lantzen dituen Gradu Amaierako Proiektua deskribatzen du. Teknologia horiek liburu elektronikoak partekatzeko erabili dira eta sortutako aplikazioari Liburutruk izena eman zaio. Honakoak dira Liburutruk-en ezaugarri nagusienak: • Zerbitzariak web API api publiko eta dokumentatua eskaintzen du. • APIaren bidez liburuak eta horiei lotutako baliabideak kudeatu daitezke. • Gehitutako liburuak BitTorrent bidez partekatzen ditu eta liburu horien magnet loturak sortzen ditu. • Web-nabigatzaileetan exekutatzen den bezeroa du, orri bakarreko aplikazioa dena. • Bezeroak zerbitzariaren APIa erabiltzen du. • Aplikazioa eta kodea edonork eskura ditzake.

Cr~(2+):ZnSe的激光输出和调谐性能

Cr~(2+):ZnSe具有很宽的吸收带和发射带,是中红外波段优秀的可调谐激光材料。从吸收光谱、发射光谱以及角度调谐输出对Cr~(2+):ZnSe晶体的激光输出性能进行了研究。采用真空高温扩散法制备Cr~(2+):ZnSe晶体.获得了高浓度的Cr~(2+)离子掺杂的厚1.7 mm,直径10 mm的薄片ZnSe晶体。使用中心波长2.05μm,最大输出功率8 W的Tm离子掺杂的光纤激光器抽运,使用平凹腔结构搭建谐振腔,获得了最大平均功率1.034 W,中心波长2.367μm,线宽10 nm的连续激光输出。利用角度调谐的方法,对Cr:ZnSe晶体的调谐性能进行了研究,在100 nm范围内获得了调谐输出。

Cr^4＋：YAG被动调QNd：YAG陶瓷激光器的研究

介绍了近几年迅速发展的一种新型激光介质——透明Nd：YAG多晶陶瓷的发展状况，对比分析了多晶陶瓷与单晶的光谱特性、激光特性和连续实验研究情况。并对钛宝石激光器调谐至808nm，端面抽运Nd：YAG陶瓷被动调Q全固态激光器的脉冲运转进行了较为详细的理论分析和实验研究。采用初始透射率为90％的Cr^4＋：YAG可饱和吸收晶体，被动调Q的阈值功率为119mW，当端面抽运功率为465mW时，获得波长为1064nm，脉宽为16ns，重复频率为18．18kHz，单脉冲能量为3．4μJ，平均输出功率为61mW的稳定调Q

LD抽运的Nd：YLF／Cr^4＋：YAG被动调Q激光器

报道了激光二极管（LD）抽运的Nd：YLF激光器，采用平凹腔结构，分别用两片Cr^4＋：YAG可饱和吸收晶体，实现了被动调Q，输出激光波长为1053nm。采用厚度为0．5mm小信号透过率为90％的Cr^4＋ YAG，在泵浦功率最大为17W时，输出脉冲宽度为60．6ns，平均功率为1．5W，重复频率为9．5kHz，单脉冲能量为157．9mJ；采用厚度为0．55mm小信号透过率为95％的Cr^4＋ YAG，在泵浦功率最大为17W时，输出脉冲宽度为68．6ns，平均功率为1．35W，重复频率为14kHz，单脉冲

Cr2+:ZnSe中红外激光器

Cr2+掺杂II-VI族化合物在中红外波段的输出，在气体检测、遥感、通信、眼科医学、神经外科等领域有着重要的应用前景。目前已经获得了最大1.7 W的连续输出功率，18.5 W的平均脉冲功率，1100 nm的调谐范围和最窄4 ps的脉宽。对Cr2+:ZnSe连续、脉冲、随机纳米激光器以及其它的Cr2+掺杂II-VI族化合物激光器的最新的国内外研究进展进行了综述。

Cr^2＋：ZnSe激光晶体在中红外波段获得瓦级输出

中红外全固态激光器在遥感、探测、医疗和生物成像中有着重要应用，但由于激光的振荡阈值与波长的四次方成反比，因而产生中红外波段的激光需要生长出低损耗、高质量的激光晶体。Cr^2＋：ZnSe激光晶体具有宽的吸收和发射带宽、较高的激光增益，是非常有潜力的可调谐中红外激光晶体材料。

Passive Q-switching of short-length Tm3+-doped silica fiber lasers by polycrystalline Cr2+:ZnSe microchips

We demonstrate passive Q-switching of short-length double-clad Tm3+-doped silica fiber lasers near 2 mu m pumped by a laser diode array (LDA) at 790 nm. Polycrystalline Cr2+:ZnSe microchips with thickness from 0.3 to 1 mm are adopted as the Q-switching elements. Pulse duration of 120 ns, pulse energy over 14 mu] and repetition rate of 53 kHz are obtained from a 5-cm long fiber laser. As high as 530 kHz repetition rate is achieved from a 50-cm long fiber laser at similar to 10-W pump power. The performance of the Q-switched fiber lasers as a function of fiber length is also analyzed. (c) 2008 Elsevier B.V. All rights reserved.