Common-Mode Injection PWM for Parallel Converters

The ac-side terminal voltages of parallel-connected converters are different if the line reactive drops of the individual converters are different. This could result either from differences in per-phase inductances or from differences in the line currents of the converters. In such cases, the modulating signals are different for the converters. Hence, the common-mode (CM) voltages for the converters, injected by conventional space vector pulsewidth modulation (CSVPWM) to increase dc-bus utilization, are different. Consequently, significant low-frequency zero-sequence circulating currents result. This paper proposes a new modulation method for parallel-connected converters with unequal terminal voltages. This method does not cause low-frequency zero-sequence circulating currents and is comparable with CSVPWM in terms of dc-bus utilization and device power loss. Experimental results are presented at a power level of 150 kVA from a circulating-power test setup, where the differences in converter terminal voltages are quite significant.

Computation of power released during corona treatment on polymeric insulators under ac and dc excitation

With increasing energy demand, it necessitates to generate and transmit the electrical power with minimal losses. High voltage power transmission is the most economical way of transmitting bulk power over long distances. Transmission insulator is one of the main components used as a mechanical support and to electrically isolate the conductor from the tower. Corona from the hardware and conductors can significantly affect the performance of the polymeric insulators. In the present investigation a methodology is presented to evaluate the corona performance of the polymeric shed material under different environment conditions for both ac and dc excitation. The results of the comprehensive analysis on various polymeric samples and the power released from the corona electrode for both the ac and dc excitation are presented. Some interesting results obtained from the chemical analysis confirmed the presence of nitric acid species on the treated sample which in long term will affect the strength of the insulator, also the morphological changes were found to be varying for different experimental conditions. (C) 2015 The Authors. Published by Elsevier Ltd.

Control de convertidor DC/AC trifásico por eliminación selectiva de armónicos

[ES]El objetivo de este trabajo es el desarrollo de un sistema de control de un inversor trifásico mediante una modulación PWM, basada en la eliminación selectiva de armónicos. En este documento se describen las técnicas empleadas en los sistemas actuales, los métodos para implementar el sistema de control propuesto, las tareas a realizar durante el desarrollo del proyecto, una estimación económica y los resultados obtenidos. Con esto, se pretende demostrar que la eficiencia de la solución propuesta es mayor que la de los métodos actuales y que es posible implementarla de una manera sencilla.

The Ic behavior of 2G YBCO tapes under DC/AC magnetic fields at various temperatures

In order to design a High Temperature Superconducting (HTS) machine that is able to operate safely and reliably, studies on the characterization of Second Generation (2G) HTS tapes are of paramount importance. This paper presents an experimental setup to measure critical current of 2G HTS tapes in high DC magnetic fields (up to 5 Tesla) with an AC current ripple superimposed, as well as various temperatures ranging from 25 K to 77 K. The 2G tape measured is the SGS12050 coated conductor made by SuperPower. The critical current is measured by a flux vector with reference to the widest sample face from 0 to 90 degrees in 10 degree steps. Smaller steps are required close to 0 . A Variable Temperature Insert (VTI) is utilized to control temperature change. © 2010 IEEE.

A 660MHz ZVS DC-DC converter using gate-driver charge-recycling in 0.18μm CMOS with an integrated output filter

The design and manufacture of a prototype chip level power supply is described, with both simulated and experimental results. Of particular interest is the inclusion of a fully integrated on-chip LC filter. A high switching frequency of 660MHz and the design of a device drive circuit reduce losses by supply stacking, low-swing signaling and charge recycling. The paper demonstrates that a chip level converter operating at high frequency can be built and shows how this can be achieved, using zero voltage switching techniques similar to those commonly used in larger converters. Both simulations and experimental data from a fabricated circuit in 0.18μm CMOS are included. The circuit converts 2.2V to 0.75∼1.0V at ∼55mA. ©2008 IEEE.

Energy recycling from multigigahertz clocks using fully integrated switching converters

Large digital chips use a significant amount of energy to broadcast a low-skew, multigigahertz clock to millions of latches located throughout the chip. Every clock cycle, the large aggregate capacitance of the clock network is charged from the supply and then discharged to ground. Instead of wasting this stored energy, it is possible to recycle the energy by controlling its delivery to another part of the chip using an on-chip dc-dc converter. The clock driver and switching converter circuits share many compatible characteristics that allow them to be merged into a single design and fully integrated on-chip. Our buck converter prototype, manufactured in 90-nm CMOS, provides a proof-of-concept that clock network energy can be recycled to other parts of the chip, thus lowering overall energy consumption. It also confirms that monolithic multigigahertz switching converters utilizing zero-voltage switching can be implemented in deep-submicrometer CMOS. With multigigahertz operation, fully integrated inductors and capacitors use a small amount of chip area with low losses. Combining the clock driver with the power converter can share the large MOSFET drivers necessary as well as being energy and space efficient. We present an analysis of the losses which we confirm by experimentally comparing the merged circuit with a conventional clock driver. © 2012 IEEE.

DC and AC Shielding properties of bulk high-tc

We have studied numerically and experimentally the magnetic flux penetration in high-Tc superconducting tube subjected to a uniform magnetic field parallel to its long axis. This study is carried in view of designing low-frequency magnetic shields by exploiting the diamagnetic properties of high-Tc superconducting ceramics. We have measured the field attenuation for applied magnetic fields in the frequency range 5 mHz-0.1 Hz by Hall probe measurements and at audio frequencies using a sensing coil. A simple 1D analysis using the Kim critical state model was found to be able to reproduce the experimental data satisfactorily. We have also determined the phase shift between the internal and the applied field both experimentally and numerically. Finally, we have studied the sweep rate dependence of the magnetic shielding properties, using data recorded either at several constant sweep rates dB /dt or at several AC fields of various amplitudes and frequencies. Both methods agree with each other and lead to a n-value of the E ∼ Jn law equal to ∼40 at 77 K. © 2009 IEEE.

Lossless electroabsorption modulator monolithically rntegrated with a semiconductor optical amplifier and dual-wavegulde spot-size converters

Semiconductor optical amplifier and electroabsorption modulator monolithically integrated with dual-waveguide spot-size converters at the input and output ports is demonstrated by means of selective area growth, quantum-well intermixing, and asymmetric twin waveguide technologies. At the wavelength range of 1550 similar to 1600 nm, lossless operation with extinction ratios of 25-dB dc and 11.8-dB radio frequency and more than 10-GHz 3-dB modulation bandwidth is successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3 degrees x 10.6 degrees, respectively, resulting in 3.0-dB coupling loss with cleaved single-mode optical fiber.

Electroabsorption-Modulated DFB laser Integrated.With dual-core spot-size converters

A 1.55-mu m single shallow ridge electroabsorptionmodulated distributed feedback laser that is monolithically integrated with a buried-ridge-stripe dual-core spot-size converter (SSC) at the input and output ports was fabricated by combining selective area growth, quantum-well intermixing, and dual-core integration techniques simultaneously. These devices exhibit a threshold current of 34 mA, a side mode suppression ratio of 38.0 dB, a 3-dB modulation bandwidth of 11.0 GHz, and a modulator extinction ratio of 25.0 dB dc. The output beam divergence angles of the SSC in the horizontal and vertical directions are as small as 7.3 degrees x 18 degrees, respectively, resulting in 3.2-dB coupling loss with a cleaved single-mode optical fiber.

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved.

Degenerate four-wave-mixing signals from dc- and ac-driven semiconductor superlattice

Within the one-dimensional tight-binding model;rnd chi-3 approximation, we have calculated four-wave-mixing (FWM) signals for a semiconductor superlattice in the presence of both static and high-frequency electric fields. When the exciton effect is negligible, the time-periodic field dynamically delocalizes the otherwise localized Wannier-Stark states, and accordingly quasienergy band structures are formed, and manifest in the FWM spectra as a series of equally separated continua. The width of each continuum is proportional to the joint width of the valence and conduction minibands and is independent of the Wannier-Stark index. The realistic homogeneous broadening blurs the continua into broad peaks, whose line shapes, far from the Lorentzian, vary with the delay time in the FWM spectra. The swinging range of the peaks is just the quasienergy bandwidth. The dynamical delocalization (DDL) also induces significant FWM signals well beyond the excitation energy window. When the Coulomb interaction is taken into account, the unequal spacing between the excitonic Wannier-Stark levels weakens the DDL effect, and the FWM spectrum is transformed into groups of discrete lines. Strikingly, the groups are evenly spaced by the ac field frequency, reflecting the characteristic of the quasienergy states. The homogeneous broadening again smears out the line structures, leading to the excitonic FWM spectra quite similar to those without the exciton effect. However, all these features predicted by the dynamical theory do not appear in a recent experiment [Phys. Rev. Lett. 79, 301 (1997)], in which, by using the static approximation the observed Wannier-Stark ladder with delay-time-dependent spacing in the FWM spectra is attributed to a temporally periodic dipole field, produced by the Bloch oscillation of electrons in real space. The contradiction between the dynamical theory and the experiments is discussed. In addition, our calculation indicates that the dynamical localization coherently enhances the time-integrated FWM signals. The feasibility of using such a technique to study the dynamical localization phenomena is shown. [S0163-1829(99)10607-6].

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved.

Effective response of nonlinear composite under external AC and DC electric field

A perturbation method is used to study effective response of nonlinear Kerr composites, which are subject to the constitutive relation of electric displacement and electric field, D-alpha = epsilon(alpha)E + chi(alpha)vertical bar E vertical bar(2)E. Under the external AC and DC electric field E-app = E-a (1 + sinwt), the effective nonlinear responses and local potentials are induced by the cubic nonlinearity of Kerr materials at all harmonics. As an example in three dimensions, we have investigated this kind of nonlinear composites with spherical inclusions embedded in a host. At all harmonic frequencies, the potentials in inclusion and host regions are derived. Furthermore, the formulae of the effective linear and nonlinear responses are given in the dilute limit.

Effective dielectric response of nonlinear composites with external ac and dc electric field

The perturbation method is developed to investigate the effective nonlinear dielectric response of Kerr composites when the external ac and dc electric field is applied. Under the external ac and dc electric field E-app=E-a(1+sin omegat), the effective coupling nonlinear response can be induced by the cubic nonlinearity of Kerr nonlinear materials at the zero frequency, the finite basic frequency omega, the second and the third harmonics, 2omega and 3omega, and so on. As an example, we have investigated the cylindrical inclusions randomly embedded in a host and derived the formulas of the effective nonlinear dielectric response at harmonics in dilute limit. For a higher concentration of inclusions, we have proposed a nonlinear effective-medium approximation by introducing the general effective nonlinear response. With the relationships between the effective nonlinear response at harmonics and the general effective nonlinear response, we have derived a set of formulas of the effective nonlinear dielectric responses at harmonics for a larger volume fraction. (C) 2004 American Institute of Physics.