Probabilistic soil identification based on cone penetration tests

In geotechnical engineering, soil classification is an essential component in the design process. Field methods such as the cone penetration test (CPT) can be used as less expensive and faster alternatives to sample retrieval and testing. Unfortunately, current soil classification charts based on CPT data and laboratory measurements are too generic, and may not provide an accurate prediction of the soil type. A probabilistic approach is proposed here to update and modify soil identification charts based on site-specific CPT data. The probability that a soil is correctly classified is also estimated. The updated identification chart can be used for a more accurate prediction of the classification of the soil, and can account for prior information available before conducting the tests, site-specific data, and measurement errors. As an illustration, the proposed approach is implemented using CPT data from the Treporti Test Site (TTS) near Venice (Italy) and the National Geotechnical Experimentation Sites (NGES) at Texas A&M University. The applicability of the site-specific chart for other sites in Venice Lagoon is assessed using data from the Malamocco test site, approximately 20 km from TTS.

Understanding the kink formation in GaAs/InAs heterostructural nanowires

The kinks formation in heterostructural nanowires was observed to be dominant when InAs nanowires were grown on GaAs nanowires. Nanowires were grown through vapor-liquid-solid (VLS) mechanism in an MOCVD (metalorganic chemical vapor deposition) reactor. GaAs nanowires were grown in [1 1 1 ]B direction on a GaAs (1 1 1 )B substrate. When InAs nanowires grown on the GaAs nanowires, most of the InAs nanowires changed their growth directions from [1 1 1 ]B to other 〈111〉B directions. The kinks formation is ascribed to the large compressive misfit strain at the GaAs/InAs interface (7.2% lattice mismatch between GaAs and InAs) and the high mobility of indium species during MOCVD growth. The in-depth analysis of the kinks formation was done by growing InAs for short times on the GaAs nanowires and characterizing the samples. The hindrance to compressively strain InAs to form coherent layers with GaAs pushed the InAs/Au interfaces to the sides of the GaAs nanowires growth ends. New InAs/Au interfaces have generated at the sides of GaAs nanowires, due to lateral growth of InAs on GaAs nanowires. These new interfaces led the InAs nanowires growth in other 〈111〉B directions. The morphological and structural features of these heterostructural kinked nanowires were characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques. © 2006 IEEE.

Influence of Potamogeton crispus growth on nutrients in the sediment and water of Lake Tangxunhu

An incubation experiment was performed on Potamogeton crispus (P. crispus) using sediment collected from Lake Tangxunhu in the center of China, in order to determine the effects of plant growth on Fe, Si, Cu, Zn, Mn, Mg, P, and Ca concentrations in the sediments and overlying waters. After 3 months of incubation, Ca, Mg, and Si concentrations in the water column were significantly lower, and P and Cu concentrations were significantly higher than in unplanted controls. The effect of P. crispus growth on sediment pore waters and water-extractable elements varied. Concentrations of Ca, Mg, Si, Fe, Cu, and Zn were significantly higher, and P was significantly lower, than in pore waters of the control. Water-extracted concentrations of Fe, Mg, and Si in the sediments were lower, and P was higher, than in the control. Presence of P. crispus generally enhanced concentration gradients of elements between pore waters and overlying waters but not for P. The growth of P. crispus was associated with an increase in water pH and formation of root plaques, resulting in complex effects on the sediment nutritional status.

Distribution of nitrogen and phosphorus in sediment cores and overlying water of Donghu Lake

In this study, the seasonal, vertical distribution of various phosphorus and nitrogen forms in the sediment and overlying water of Donghu Lake were investigated. The concentration of total nitrogen (TN) in overlying water was high in spring and autumn, but that of NO3--N reached its peak in autumn. From summer to autumn and from winter to spring, the concentration of phosphorus in overlying water decreased, while it increased from autumn to winter. Vertical characteristic forms of phosphorus in sediment cores are total phosphorus (TP), labile phosphorus (LP), Fe-P and Al-P, obviously enriched in the surface layer (0-10 cm), but their concentrations are observably reduced along with the depth of sediment. The research is of important theoretical and practical value to understand the status and to control the developmental trend of eutrophication in Donghu Lake.

Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

High-dose ion implantation of phosphorus into 4H-SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) P(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) P(+)cm(-2). The implantations are performed at room temperature and subsequently annealed at 1500 degrees C. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500 degrees C, a reasonably low sheet resistance of 106 Omega/square is obtained at ion flux of 1.0 x 10(12) P(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).

Submicrosecond rearrangeable nonblocking silicon-on-insulator thermo-optic 4 X 4 switch matrix

A rearrangeable nonblocking silicon-on-insulator-based thermo-optic 4 X 4 switch matrix is designed and fabricated. A spot-size converter is integrated to reduce the insertion loss, and a new driving circuit is designed to improve the response speed. The insertion loss is less than 10 dB, and the response time is 950 us. (c) 2007 Optical Society of America

Si doping effect on self-organized InAs/GaAs quantum dots

In situ ultra high vacuum scanning probe microscopy (SPM) and low-temperature :photoluminescence (PL) studies have been performed on Si-doped self-organized InAs/GaAs quantum dots samples to investigate the Si doping effects. Remarkably, when Si is doped in the sample, according to the SPM images, more small dots are formed when compared with images from undoped samples. On the PL spectra, high-energy band tail which correspond to the small dots appear, with increasing doping concentration, the integral intensity of the high-energy band tail account for the whole peak increase too. We relate this phenomenon to a model that takes the Si atom as the nucleation center for QDs formation. (C) 1999 Elsevier Science B.V. All rights reserved.

Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.

In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52x10(20) cm(-3) with Hall mobility of about 1 cm(2)/Vs and resistivity of 1.6 similar to 2.2x10(-2) Omega cm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Omega cm for resistivity, 5.3x10(18) cm(-3) for hole carrier concentration, and 7 cm(2)/VS for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained.

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100 degrees was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300 degrees C indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

基于进化分布式本体的语义Web服务动态发现

在语义Web服务中, 确认分布式本体变动、维护其一致性并实现基于进化的分布式本体的Web服务语义查询成为了一个重要挑战.该文使用SHOQ(D)的分布式描述逻辑扩展 (DDL) 描述相互关联的异构分布式本体,提出了优先分布式知识库(PDK)的概念,探讨了PDK方法的一些重要属性.PDK用来描述分布式本体的进化和更新, 它适用于语义Web服务环境.基于PDK, 文中还给出了相应的语义查询方法,Web服务的语义查询可以归结为检测同这个查询对应的概念在最优先PDK中的p -可满足性.

用双切比雪夫方法近似含噪音移动对象轨迹

在移动对象数据库中需要存储大量移动对象的历史轨迹。为了降低存储开销，同时提高轨迹查询的效率，研究者们提出了很多基于时间序列的方法对轨迹序列进行压缩近似及索引。但是这些方法不能用于不精确的轨迹数据。本文针对含噪音的轨迹数据提出了一种新的近似算法。该方法充分利用了轨迹位置数据和速度数据的导数关系，在不增加计算复杂度的情况下，能够更好地处理不精确的轨迹。在相同的压缩比下，用双切比雪夫方法重建的轨迹比现有方法更加接近移动对象的真实轨迹。