The quadratic spinor Lagrangian, axial torsion current and generalizations

We show that the Einstein-Hilbert, the Einstein-Palatini, and the Holst actions can be derived from the Quadratic Spinor Lagrangian (QSL), when the three classes of Dirac spinor fields, under Lounesto spinor field classification, are considered. To each one of these classes, there corresponds an unique kind of action for a covariant gravity theory. In other words, it is shown to exist a one-to-one correspondence between the three classes of non-equivalent solutions of the Dirac equation, and Einstein-Hilbert, Einstein-Palatini, and Holst actions. Furthermore, it arises naturally, from Lounesto spinor field classification, that any other class of spinor field-Weyl, Majorana, flagpole, or flag-dipole spinor fields-yields a trivial (zero) QSL, up to a boundary term. To investigate this boundary term, we do not impose any constraint on the Dirac spinor field, and consequently we obtain new terms in the boundary component of the QSL. In the particular case of a teleparallel connection, an axial torsion one-form current density is obtained. New terms are also obtained in the corresponding Hamiltonian formalism. We then discuss how these new terms could shed new light on more general investigations.

Addition of Ca-compounds nanoparticles in melt-textured Bi : 2212

Superconducting BSCCO samples made by melt-texturing process were prepared with the addition of calcium zirconate and calcium silicate nanoparticles. Bi:2212 melt-textured composites prepared with I wt.% of either addition showed different behavior for the critical current density as a function of the applied field, indicating that for each additional compound the improvement can be associated to different enhancement mechanisms, such as the creation of pinning centers and the increase on the connectivity of the grains. The estimated pinning forces indicated higher values for the calcium compound containing samples. (c) 2007 Elsevier B.V. All rights reserved.

Characterization of BaTi1-xZrxO3 thin films obtained by a soft chemical spin-coating technique

Single-phase perovskite structure BaZrxTi1-xO3 (BZT) (0.05less than or equal toxless than or equal to0.25) thin films were deposited on Pt-Ti-SiO2-Si substrates by the spin-coating technique. The structural modifications in the thin films were studied using x-ray diffraction and micro-Raman scattering techniques. Lattice parameters calculated from x-ray data indicate an increase in lattice (a axis) with the increasing content of zirconium in these films. Such Zr substitution also result in variations of the phonon mode wave numbers, especially those of lower wave numbers, for BaZrxTi1-xO3 thin films, corroborate to the structural change caused by the zirconium doping. on the other hand, Raman modes persist above structural phase transition, although all optical modes should be Raman inactive in the cubic phase. The origin of these modes must be interpreted as a function of a local breakdown of the cubic symmetry, which could be a result of some kind of disorder. The BZT thin films exhibited a satisfactory dielectric constant close to 181-138, and low dielectric loss tan delta<0.03 at the frequency of 1 kHz. The leakage current density of the BZT thin films was studied at elevated temperatures and the data obey the Schottky emission model. Through this analysis the Schottky barrier height values 0.68, 1.39, and 1.24 eV were estimated to the BZT5, BZT15, and BZT25 thin films, respectively. (C) 2004 American Institute of Physics.

Electrical conduction mechanism and phase transition studies using dielectric properties and Raman spectroscopy in ferroelectric Pb0.76Ca0.24TiO3 thin films

We have studied the phase transition behavior of Pb0.76Ca0.24TiO3 thin films using Raman scattering and dielectric measurement techniques. We also have studied the leakage current conduction mechanism as a function of temperature for these thin films on platinized silicon substrates. A Pb0.76Ca0.24TiO3 thin film was prepared using a soft chemical process, called the polymeric precursor method. The results showed that the dependence of the dielectric constant upon the frequency does not reveal any relaxor behavior. However, a diffuse character-type phase transition was observed upon transformation from a cubic paraelectric phase to a tetragonal ferroelectric phase. The temperature dependency of Raman scattering spectra was investigated through the ferroelectric phase transition. The soft mode showed a marked dependence on temperature and its disappearance at about 598 K. on the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive above the phase transition temperature. The origin of these modes must be interpreted in terms of a local breakdown of cubic symmetry by some kind of disorder. The lack of a well-defined transition temperature suggested a diffuse-type phase transition. This result corroborate the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in the thin film. The leakage current density of the PCT24 thin film was studied at elevated temperatures, and the data were well fitted by the Schottky emission model. The Schottky barrier height of the PCT24 thin film was estimated to be 1.49 eV. (C) 2003 American Institute of Physics.

Ferroelectric properties and leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 by the polymeric precursor method were investigated. These films showed excellent ferroelectric properties in terms of large remnant polarization (2P(r)) of 47.6 mu C/cm(2) and (2E(c)) of 55 kV/cm, fatigue-free characteristics up to 10(10) switching cycles, and a current density of 0.7 mu A/cm(2) at 10 kV/cm. X-ray diffraction and scanning electron microscope investigations indicate that the deposited films exhibit a dense, well-crystallized microstructure having random orientations and with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the platelike grains of the BLT films, which make the domain walls easier to be switched under external field.

Leakage current, ferroelectric and structural properties in Pb(1-x)Ba(x)TiO(3) thin films prepared by chemical route

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Search for the flavor-changing neutral current decay Bs 0 → μ+ μ- pp̄ Collisions at √s = 1.96 TeV with the DO Detector

We present the results of a search for the flavor-changing neutral current decay Bs 0 → μ+ μ-. using a data set with integrated luminosity of 240 pb-1 of pp̄ collisions at √s = 1.96 TeV collected with the D0 detector in run II of the Fermilab Tevatron collider. We find the upper limit on the branching fraction to be B(Bs 0 → μ+ π-) ≤ 5.0 × 10-7 at the 95% C.L. assuming no contributions from the decay Bd 0 → μ+ μ- in the signal region. This limit is the most stringent upper bound on the branching fraction Bs 0 → μ+ μ- to date. © 2005 The American Physical Society.

Corn root length density and root diameter as affected by soil compaction and soil water content

Negative effects of soil compaction have been recognized as one of the problems restricting the root system and consequently impairing yields, especially in the Southern Coastal Plain of the USA. Simulations of the root restricting layers in green house studies are necessary for the development of mechanism which alleviates soil compaction problems in these soils. The selection of three distinct bulk densities based on the standard proctor test is also an important factor to determine which bulk density restricts the root layer. The experiment was conducted to assess the root length density and root diameter of the corn (Zea mays L.) crop as a function of bulk density and water stress, characterized by the soil density (1.2; 1.4, and 1.6 g cm -3), and two levels of the water content, approximately (70 and 90% field capacity). The statistical design adopted was completely randomized design, with four replicates in a factorial pattern of (3 × 2). The PVC tubes were superimposed with an internal diameter of 20 cm with a height of 40 cm (the upper tube 20 cm, compacted and inferior tube 10 cm), the hardpan with different levels of soil compaction were located between 20 and 30 cm of the depth of the pot. Results showed that: the main effects of subsoil mechanical impedance were observed on the top layer indicating that the plants had to penetrate beyond the favorable soil conditions before root growth was affected from 3.16; 2.41 to 1.37 cm cm -3 (P<0.005). There was a significant difference at the hardpan layer for the two levels of water and 90% field capacity reduced the root growth from 0.91 to 0.60 cm cm -3 (P<0.005). The root length density and root diameter were affected by increasing soil bulk density from 1.2 to 1.6 g cm -3 which caused penetration resistance to increase to 1.4 MPa. Soil water content of 70% field capacity furnished better root growth in all the layers studied. The increase in root length density resulted in increased root volume. It can also be concluded that the effect of soil compaction impaired the root diameter mostly at the hardpan layer. Soil temperature had detrimental effect on the root growth mostly with higher bulk densities.

Test results of fault current limiter using YBCO tapes with shunt protection

A Fault Current Limiter (FCL) based on high temperature superconducting elements with four tapes in parallel were designed and tested in 220 V line for a fault current peak between 1 kA to 4 kA. The elements employed second generation (2G) HTS tapes of YBCO coated conductor with stainless steel reinforcement. The tapes were electrically connected in parallel with effective length of 0.4 m per element (16 elements connected in series) constituting a single-phase unit. The FCL performance was evaluated through over-current tests and its recovery characteristics under load current were analyzed using optimized value of the shunt protection. The projected limiting ratio achieved a factor higher than 4 during fault of 5 cycles without degradation. Construction details and further test results will be shown in the paper. © 2010 IOP Publishing Ltd.

Tetragonal to monoclinic phase transition observed during Zr anodisation

Plasma electrolytic oxidation (PEO) is a coating procedure that utilises anodic oxidation in aqueous electrolytes above the dielectric breakdown voltage to produce oxide coatings that have specific properties. These conditions facilitate oxide formation under localised high temperatures and pressures that originate from short-lived microdischarges at sites over the metal surface and have fast oxide volume expansion. Anodic ZrO2 films were prepared by subjecting metallic zirconium to PEO in acid solutions (H2C 2O4 and H3PO4) using a galvanostatic DC regime. The ZrO2 microstructure was investigated in films that were prepared at different charge densities. During the anodic breakdown, an important change in the amplitude of the voltage oscillations at a specific charge density was observed (i.e., the transition charge density (Q T)). We verified that this transition charge is a monotonic function of both the current density and temperature applied during the anodisation, which indicated that Q T is an intrinsic response of this system. The oxide morphology and microstructure were characterised using SEM and X-ray diffraction experiments (XRD) techniques. X-ray diffraction analysis revealed that the change in voltage oscillation was correlated with oxide microstructure changes during the breakdown process. © 2012 Springer-Verlag Berlin Heidelberg.

Fault current limiter using transformer and modular device of YBCO coated conductor

In this work, we report on the evaluation of a superconducting fault current limiter (SFCL). It is consisted of a modular superconducting device combined with a short-circuited transformer with a primary copper winding connected in series to the power line and the secondary side short-circuited by the superconducting device. The basic idea is adding a magnetic component to contribute to the current limitation by the impedance reflected to the line after transition of the superconducting device. The evaluation tests were performed with a prospective current up to 2 kA, with the short-circuited transformer of 2.5 kVA, 220 V/660 V connected to a test facility of 100 kVA power capacity. The resistive SFCL using a modular superconducting device was tested without degradation for a prospective fault current of 1.8 kA, achieving the limiting factor 2.78; the voltage achieved 282 V corresponding to an electric field of 11 V/m. The test performed with the combined SFCL (xsuperconducting device + transformer) using series and toroidal transformers showed current limiting factor of 3.1 and 2 times, respectively. The test results of the combined SFCL with short-circuited transformer showed undesirable influence of the transformer impedance, resulting in reduction of the fault current level. © 2002-2011 IEEE.

The effects of pinning on critical currents of superconducting films

Using molecular dynamics simulations, we analyze the effects of artificial periodic arrays of pinning sites on the critical current of superconducting thin films as a function of vortex density. We analyze two types of periodic pinning array: hexagonal and Kagomé. For the Kagome pinning network we make calculations using two directions of transport current: along and perpendicular to the main axis of the lattice. Our results show that the hexagonal pinning array presents higher critical currents than the Kagomé and random pinning configuration for all vortex densities. In addition, the Kagomé networks show anisotropy in their transport properties. © 2012 Springer Science+Business Media, LLC.

Obtenção de filmes finos supercondutores do sistema BSCCO dopados com prata

Pós-graduação em Ciência dos Materiais - FEIS

Influência dos defeitos cristalinos nas propriedades dielétricas e não-ôhmicas do 'CA' 'CU IND.3' 'TI IND.4' 'O IND.12'(CCTO)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Análise eletromagnética de cabos OPGW utilizando métodos numérico e analítico

Este trabalho apresenta o estudo eletromagnético de cabos OPGW (Optical Ground Wire) os quais têm dupla função: de pára-raios para linhas de transmissão de alta tensão e de canal de comunicação através de fibras ópticas embutidas na estrutura do cabo. Descargas atmosféricas ou curtos-circuitos podem comprometer a integridade do cabo, devido ao aquecimento nas regiões onde há maior concentração de corrente. Para a análise deste problema foram feitos cálculos eletromagnéticos relacionando-os aos efeitos térmicos no cabo. Nesta análise foram consideradas três diferentes geometrias: o modelo de cabo real, o modelo de cabo com camadas homogêneas e o modelo de cabo com uma camada modificada; esta modificação está relacionada à forma geométrica dos fios da armação do cabo. As ferramentas utilizadas em tal estudo foram o software comercial FEMLAB Multiphysics, baseado no método dos elementos finitos, e um método analítico desenvolvido a partir das equações de Maxwell no domínio da freqüência, que foi implementado utilizando o software MATLAB. Os principais resultados deste trabalho são gráficos de distribuição de densidade de corrente na seção reta do cabo para diferentes freqüências, estudo do efeito pelicular e do efeito de proximidade entre os condutores do cabo.