Extensiones multimedia Intel

Desde que se inventó el primer ordenador, uno de los objetivos ha sido que el ordenador fuese capaz de ejecutar más y más rápido, para poder así solucionar problemas más complejos. La primera solución fue aumentar la potencia de los procesadores, pero las limitaciones físicas impuestas por la velocidad de los componentes electrónicos han obligado a buscar otras formas de mejorar el rendimiento. Desde entonces, ha habido muchos tipos de tecnologías para aumentar el rendimiento como los multiprocesadores, las arquitecturas MIMD… pero nosotros analizaremos la arquitectura SIMD. Este tipo de procesadores fue muy usado en los supercomputadores de los años 80 y 90, pero el progreso de los microprocesadores hizo que esta tecnología quedara en un segundo plano. Hoy en día la todos los procesadores tienen arquitecturas que implementan las instrucciones SIMD (Single Instruction, Multiple Data). En este documento estudiaremos las tecnologías de SIMD de Intel SSE, AVX y AVX2 para ver si realmente usando el procesador vectorial con las instrucciones SIMD, se obtiene alguna mejora de rendimiento. Hay que tener en cuenta que AVX solo está disponible desde 2011 y AVX2 no ha estado disponible hasta el 2013, por lo tanto estaremos trabajando con nuevas tecnologías. Además este tipo de tecnologías tiene el futuro asegurado, al anunciar Intel su nueva tecnología, AVX- 512 para 2015.

Measurement of the band bending and surface dipole at chemically functionalized Si(111)/vacuum interfaces

The core-level energy shifts observed using X-ray photoelectron spectroscopy (XPS) have been used to determine the band bending at Si(111) surfaces terminated with Si-Br, Si-H, and Si-CH₃ groups, respectively. The surface termination influenced the band bending, with the Si 2p_3/2 binding energy affected more by the surface chemistry than by the dopant type. The highest binding energies were measured on Si(111)-Br (whose Fermi level was positioned near the conduction band at the surface), followed by Si(111)-H, followed by Si(111)-CH₃ (whose Fermi level was positioned near mid-gap at the surface). Si(111)-CH₃ surfaces exposed to Br₂(g) yielded the lowest binding energies, with the Fermi level positioned between mid-gap and the valence band. The Fermi level position of Br₂(g)-exposed Si(111)-CH₃ was consistent with the presence of negatively charged bromine-containing ions on such surfaces. The binding energies of all of the species detected on the surface (C, O, Br) shifted with the band bending, illustrating the importance of isolating the effects of band bending when measuring chemical shifts on semiconductor surfaces. The influence of band bending was confirmed by surface photovoltage (SPV) measurements, which showed that the core levels shifted toward their flat-band values upon illumination. Where applicable, the contribution from the X-ray source to the SPV was isolated and quantified. Work functions were measured by ultraviolet photoelectron spectroscopy (UPS), allowing for calculation of the sign and magnitude of the surface dipole in such systems. The values of the surface dipoles were in good agreement with previous measurements as well as with electronegativity considerations. The binding energies of the adventitious carbon signals were affected by band bending as well as by the surface dipole. A model of band bending in which charged surface states are located exterior to the surface dipole is consistent with the XPS and UPS behavior of the chemically functionalized Si(111) surfaces investigated herein.

Investigations of charge-carrier dynamics at semiconductor/liquid interfaces

Theoretical and experimental investigations of charge-carrier dynamics at semiconductor/liquid interfaces, specifically with respect to interfacial electron transfer and surface recombination, are presented.

Fermi's golden rule has been used to formulate rate expressions for charge transfer of delocalized carriers in a nondegenerately doped semiconducting electrode to localized, outer-sphere redox acceptors in an electrolyte phase. The treatment allows comparison between charge-transfer kinetic data at metallic, semimetallic, and semiconducting electrodes in terms of parameters such as the electronic coupling to the electrode, the attenuation of coupling with distance into the electrolyte, and the reorganization energy of the charge-transfer event. Within this framework, rate constant values expected at representative semiconducting electrodes have been determined from experimental data for charge transfer at metallic electrodes. The maximum rate constant (i.e., at optimal exoergicity) for outer-sphere processes at semiconducting electrodes is computed to be in the range 10^-17-10^-16 cm⁴ s^-1, which is in excellent agreement with prior theoretical models and experimental results for charge-transfer kinetics at semiconductor/liquid interfaces.

Double-layer corrections have been evaluated for semiconductor electrodes in both depletion and accumulation conditions. In conjuction with the Gouy-Chapman-Stern model, a finite difference approach has been used to calculate potential drops at a representative solid/liquid interface. Under all conditions that were simulated, the correction to the driving force used to evaluate the interfacial rate constant was determined to be less than 2% of the uncorrected interfacial rate constant.

Photoconductivity decay lifetimes have been obtained for Si(111) in contact with solutions of CH₃OH or tetrahydrofuran containing one-electron oxidants. Silicon surfaces in contact with electrolyte solutions having Nernstian redox potentials > 0 V vs. SCE exhibited low effective surface recombination velocities regardless of the different surface chemistries. The formation of an inversion layer, and not a reduced density of electrical trap sites on the surface, is shown to be responsible for the long charge-carrier lifetimes observed for these systems. In addition, a method for preparing an air-stable, low surface recombination velocity Si surface through a two-step, chlorination/alkylation reaction is described.

Effect of Microstructural Interfaces on the Mechanical Response of Crystalline Metallic Materials

Advances in nano-scale mechanical testing have brought about progress in the understanding of physical phenomena in materials and a measure of control in the fabrication of novel materials. In contrast to bulk materials that display size-invariant mechanical properties, sub-micron metallic samples show a critical dependence on sample size. The strength of nano-scale single crystalline metals is well-described by a power-law function, σαD^-n, where D is a critical sample size and n is a experimentally-fit positive exponent. This relationship is attributed to source-driven plasticity and demonstrates a strengthening as the decreasing sample size begins to limit the size and number of dislocation sources. A full understanding of this size-dependence is complicated by the presence of microstructural features such as interfaces that can compete with the dominant dislocation-based deformation mechanisms. In this thesis, the effects of microstructural features such as grain boundaries and anisotropic crystallinity on nano-scale metals are investigated through uniaxial compression testing. We find that nano-sized Cu covered by a hard coating displays a Bauschinger effect and the emergence of this behavior can be explained through a simple dislocation-based analytic model. Al nano-pillars containing a single vertically-oriented coincident site lattice grain boundary are found to show similar deformation to single-crystalline nano-pillars with slip traces passing through the grain boundary. With increasing tilt angle of the grain boundary from the pillar axis, we observe a transition from dislocation-dominated deformation to grain boundary sliding. Crystallites are observed to shear along the grain boundary and molecular dynamics simulations reveal a mechanism of atomic migration that accommodates boundary sliding. We conclude with an analysis of the effects of inherent crystal anisotropy and alloying on the mechanical behavior of the Mg alloy, AZ31. Through comparison to pure Mg, we show that the size effect dominates the strength of samples below 10 μm, that differences in the size effect between hexagonal slip systems is due to the inherent crystal anisotropy, suggesting that the fundamental mechanism of the size effect in these slip systems is the same.

Strong atom-light interactions along nanostructures: Transition from free-space to nanophotonic interfaces

An exciting frontier in quantum information science is the integration of otherwise "simple'' quantum elements into complex quantum networks. The laboratory realization of even small quantum networks enables the exploration of physical systems that have not heretofore existed in the natural world. Within this context, there is active research to achieve nanoscale quantum optical circuits, for which atoms are trapped near nano-scopic dielectric structures and "wired'' together by photons propagating through the circuit elements. Single atoms and atomic ensembles endow quantum functionality for otherwise linear optical circuits and thereby enable the capability of building quantum networks component by component. Toward these goals, we have experimentally investigated three different systems, from conventional to rather exotic systems : free-space atomic ensembles, optical nano fibers, and photonics crystal waveguides. First, we demonstrate measurement-induced quadripartite entanglement among four quantum memories. Next, following the landmark realization of a nanofiber trap, we demonstrate the implementation of a state-insensitive, compensated nanofiber trap. Finally, we reach more exotic systems based on photonics crystal devices. Beyond conventional topologies of resonators and waveguides, new opportunities emerge from the powerful capabilities of dispersion and modal engineering in photonic crystal waveguides. We have implemented an integrated optical circuit with a photonics crystal waveguide capable of both trapping and interfacing atoms with guided photons, and have observed the collective effect, superradiance, mediated by the guided photons. These advances provide an important capability for engineered light-matter interactions, enabling explorations of novel quantum transport and quantum many-body phenomena.

Representações sociais da Aids para pessoas que vivem com HIV e suas interfaces cotidianas

O presente estudo teve como objetivo descrever o conteúdo das representações sociais acerca da Aids para os usuários soropositivos em acompanhamento ambulatorial da rede pública de saúde e analisar a interface das representações sociais da Aids com o cotidiano dos indivíduos que vivem com o HIV, especialmente no que concerne à sua organização e ao processo de adesão ao tratamento. Trata-se de um estudo exploratório-descritivo, pautado na abordagem qualitativa e orientado pela Teoria das Representações Sociais. Os sujeitos consistiram em 30 usuários em acompanhamento ambulatorial de um Hospital Público Municipal localizado na cidade do Rio de Janeiro referenciado para clientes soropositivos ao HIV/Aids. Os dados foram coletados por meio de entrevista e analisados através da análise de conteúdo. Como resultados, emergiram 6 categorias, quais sejam: Elementos de memória da Ancoragem da Aids na sociedade e o seu processo de transformação, onde foi explicitada a ancoragem da Aids no outro, na África, no macaco, no homossexual e uma nova ancoragem apresentada consiste na cronicidade do diabetes, deixando a síndrome de ser sinônimo de morte; Transmissão e Prevenção da Aids segundo as pessoas que convivem com a síndrome, na qual os sujeitos apresentaram quase todas as formas cientificamente comprovadas quanto aos meios de transmissão do vírus HIV; O cotidiano dos indivíduos soropositivos permeado pelo processo de vulnerabilidade ao HIV, no âmbito do qual entende-se que o reconhecimento do risco individual frente à epidemia irá influenciar, sobretudo, as práticas e os comportamentos das pessoas; Discriminação e ocultamento no conviver com o HIV, onde se apresenta como estratégias de sobrevivência social o ocultamento do estado de soropositividade ao HIV. Assim, podem continuar a vida como pessoas consideradas normais, sem serem acusadas e discriminadas, sejam no âmbito familiar, social ou no trabalho; além disso, os sujeitos do estudo declararam que eram preconceituosos antes do diagnóstico; o processo de adesão ao tratamento na cotidianidade de indivíduos soropositivos, observando-se, nesta categoria, que um dos grandes motivadores da adesão ao tratamento consiste no fato dos usuários acreditarem no resultado positivo da terapêutica; o enfrentamento cotidiano experiênciado pelos sujeitos que convivem com o HIV, onde a forma como os sujeitos organizam o seu cotidiano para enfrentar e conviver com o HIV reflete diretamente em suas atitudes e em suas práticas, tanto no processo da adesão, como nas relações sociais (o outro) e, principalmente, na relação individual (o eu). Conclui-se que a representação social da Aids apresenta-se multifacetada e dependente do contexto histórico e social no qual o indivíduo está inserido, seus valores, cultura, nível de informação e conhecimento.

Double refraction and reflection of sequential crystal interfaces with arbitrary orientation of the optic axis and application to optimum design

The general formulation of double refraction or internal double reflection for any directions of incidence and arbitrary orientation of the optic axis in a uniaxial crystal is analysed in terms of Huygens' principle. Then double refraction and double reflection along the sequential interfaces in a crystal are discussed. On this basis, if the parameters of the interface are chosen appropriately, the range of angular separation between the ordinary ray and extraordinary ray can be much greater, It is useful for crystal element design. Finally, as an example, an optimum design of the Output end interface for a 2 x 2 electro-optic switch is given.