Monolithic surface acoustic wave resonator oscillator

A monolithic surface acoustic wave (SAW) resonator operating at 156 MHz, in which the frequency controlling element is a Fabry–Perot type of SAW resonator and the gain element is a monolithic SAW amplifier (SiOx/InSb/SiOx structure located inside the SAW resonator cavity) is described and experimental details presented. Based on the existing experimental data, an uhf monolithic ring resonator oscillator is proposed. Journal of Applied Physics is copyrighted by The American Institute of Physics.

The Impact of Emissions Trading on the Price of Electricity in Nord Pool : Market Power and Price Determination in the Nordic Electricity Market

The objective of this thesis is to find out how dominant firms in a liberalised electricity market will react when they face an increase in the level of costs due to emissions trading, and how this will effect the price of electricity. The Nordic electricity market is chosen as the setting in which to examine the question, since recent studies on the subject suggest that interaction between electricity markets and emissions trading is very much dependent on conditions specific to each market area. There is reason to believe that imperfect competition prevails in the Nordic market, thus the issue is approached through the theory of oligopolistic competition. The generation capacity available at the market, marginal cost of electricity production and seasonal levels of demand form the data based on which the dominant firms are modelled using the Cournot model of competition. The calculations are made for two levels of demand, high and low, and with several values of demand elasticity. The producers are first modelled under no carbon costs and then by adding the cost of carbon dioxide at 20€/t to those technologies subject to carbon regulation. In all cases the situation under perfect competition is determined as a comparison point for the results of the Cournot game. The results imply that the potential for market power does exist on the Nordic market, but the possibility for exercising market power depends on the demand level. In season of high demand the dominant firms may raise the price significantly above competitive levels, and the situation is aggravated when the cost of carbon dioixide is accounted for. Under low demand leves there is no difference between perfect and imperfect competition. The results are highly dependent on the price elasticity of demand.

Power Aware Real Time Scheduling in Constrained Devices

Real-time scheduling algorithms, such as Rate Monotonic and Earliest Deadline First, guarantee that calculations are performed within a pre-defined time. As many real-time systems operate on limited battery power, these algorithms have been enhanced with power-aware properties. In this thesis, 13 power-aware real-time scheduling algorithms for processor, device and system-level use are explored.

Dissipative dynamics of a harmonic oscillator: A nonperturbative approach

Starting from a microscopic theory, we derive a master equation for a harmonic oscillator coupled to a bath of noninteracting oscillators. We follow a nonperturbative approach, proposed earlier by us for the free Brownian particle. The diffusion constants are calculated analytically and the positivity of the master equation is shown to hold above a critical temperature. We compare the long time behavior of the average kinetic and potential energies with known thermodynamic results. In the limit of vanishing oscillator frequency of the system, we recover the results of the free Brownian particle.

A Novel Bandwidth Enhancement Technique for Cascode Amplifier

In this paper, a new technique is presented to increase the bandwidth for a single stage amplifier. Usually, -3 dB bandwidth of single stage amplifier is in few MHz. High output impedance and subsequent capacitive loading decrease the bandwidth of amplifier. The presented technique uses a load which itself acts as bandwidth enhancer. This high speed amplifier is designed on 180 nm CMOS technology, operates at 2.5 V power supply. This amplifier is succeeded by an output buffer to achieve a better linearity, high output swing and required output impedance for matching.

Simulation and implementation of a tunable C-band dielectric resonator oscillator

Microwave sources used in present day applications are either multiplied source derived from basic quartz crystals, or frequency synthesizers. The frequency multiplication method increases FM noise power considerably, and has very low efficiency in addition to being very complex and expensive. The complexity and cost involved demands a simple, compact and tunable microwave source. A tunable dielectric resonator oscillator(DRO) is an ideal choice for such applications. In this paper, the simulation, design and realization of a tunable DRO with a center frequency of 6250 MHz is presented. Simulation has been carried out on HP-Ees of CAD software. Mechanical and electronic tuning features are provided. The DRO operates over a frequency range of 6235 MHz to 6375 MHz. The output power is +5.33 dBm at centre frequency. The performance of the DRO is as per design with respect to phase noise, harmonic levels and tunability. and hence, can conveniently be used for the intended applications.

Applications of reverse saturable absorbers in laser science

A variety of applications exist for reverse saturable absorbers (RSAs) in the area of optical pulse processing and computing. An RSA can be used as power limiter/pulse smoother and energy limiter/pulse shortner of laser pulses. A combination of RSA and saturable absorber (SA) can be used for mode locking and pulse shaping between high power laser amplifiers in oscillator amplifier chain. Also, an RSA can be used for the construction of a molecular spatial light modulator (SLM) which acts as an input/output device in optical computers. A detailed review of the theoretical studies of these processes is presented. Current efforts to find RSAs at desired wavelength for testing these theoretical predictions are also discussed.

Design and developement of a pulsed power system for a Vircator based HPM source

Pulse Forming Line (PFL) based high voltage pulsed power systems are well suited for low impedance High Power Microwave (HPM) sources such as a virtual cathode oscillator (VIRCATOR) operating in nanosecond regimes. The system under development consists of a primary voltage source that charges the capacitor bank of a Marx pulser over a long time duration. The Marx pulser output is then conditioned by a PFL to match the requirement of the HPM diode load. This article describes the design and construction of an oil insulated pulse forming line for a REB (Relativistic Electron Beam) diode used in a VIRCATOR for the generation of high power microwaves. Design of a 250 kV/10 kA/60 ns PFL, including the PSPICE simulation for various load conditions are described.

A power scalable receiver front-end at 2.4 GHz

We propose a Low Noise Amplifier (LNA) architecture for power scalable receiver front end (FE) for Zigbee. The motivation for power scalable receiver is to enable minimum power operation while meeting the run-time performance needed. We use simple models to find empirical relations between the available signal and interference levels to come up with required Noise Figure (NF) and 3rd order Intermodulation Product (IIP3) numbers. The architecture has two independent digital knobs to control the NF and IIP3. Acceptable input match while using adaptation has been achieved by using an Active Inductor configuration for the source degeneration inductor of the LNA. The low IF receiver front end (LNA with I and Q mixers) was fabricated in 130nm RFCMOS process and tested.

An Area-Efficient Noise-Adaptive Neural Amplifier in 130 nm CMOS Technology

Chronic recording of neural signals is indispensable in designing efficient brain–machine interfaces and to elucidate human neurophysiology. The advent of multichannel micro-electrode arrays has driven the need for electronics to record neural signals from many neurons. The dynamic range of the system can vary over time due to change in electrode–neuron distance and background noise. We propose a neural amplifier in UMC 130 nm, 1P8M complementary metal–oxide–semiconductor (CMOS) technology. It can be biased adaptively from 200 nA to 2 $mu{rm A}$, modulating input referred noise from 9.92 $mu{rm V}$ to 3.9 $mu{rm V}$. We also describe a low noise design technique which minimizes the noise contribution of the load circuitry. Optimum sizing of the input transistors minimizes the accentuation of the input referred noise of the amplifier and obviates the need of large input capacitance. The amplifier achieves a noise efficiency factor of 2.58. The amplifier can pass signal from 5 Hz to 7 kHz and the bandwidth of the amplifier can be tuned for rejecting low field potentials (LFP) and power line interference. The amplifier achieves a mid-band voltage gain of 37 dB. In vitro experiments are performed to validate the applicability of the neural low noise amplifier in neural recording systems.

A High‐Gain Audiofrequency Amplifier

The design of a three‐stage high‐gain amplifier for laboratory use in audiofrequency investigations is described. Four‐electrode tubes are used as screen‐grid amplifiers and an amplification of the order of 200 per stage is obtained. The inaccuracy of McDonald's formula for calculation of stage‐gain has been pointed out. The gain‐frequency characteristics are given for power as well as voltage amplification. It is shown that extreme care is necessary in the design of shielding to obtain high‐voltage amplification of the order of 120 decibels as obtained in this three‐stage amplifier.

Direct ultrafast laser written C-band waveguide amplifier in Er-doped chalcogenide glass

This paper reports the fabrication and characterization of an ultrafast laser written Er-doped chalcogenide glass buried waveguide amplifier; Er-doped GeGaS glass has been synthesized by the vacuum sealed melt quenching technique. Waveguides have been fabricated inside the 4 mm long sample by direct ultrafast laser writing. The total passive fiber-to-fiber insertion loss is 2.58 +/- 0.02 dB at 1600 nm, including a propagation loss of 1.6 +/- 0.3 dB. Active characterization shows a relative gain of 2.524 +/- 0.002 dB/cm and 1.359 +/- 0.005 dB/cm at 1541 nm and 1550 nm respectively, for a pump power of 500 mW at a wavelength of 980 nm. (C) 2012 Optical Society of America

A power-scalable RF CMOS receiver for 2.4 GHz Wireless Sensor Network applications

A power scalable receiver architecture is presented for low data rate Wireless Sensor Network (WSN) applications in 130nm RF-CMOS technology. Power scalable receiver is motivated by the ability to leverage lower run-time performance requirement to save power. The proposed receiver is able to switch power settings based on available signal and interference levels while maintaining requisite BER. The Low-IF receiver consists of Variable Noise and Linearity LNA, IQ Mixers, VGA, Variable Order Complex Bandpass Filter and Variable Gain and Bandwidth Amplifier (VGBWA) capable of driving variable sampling rate ADC. Various blocks have independent power scaling controls depending on their noise, gain and interference rejection (IR) requirements. The receiver is designed for constant envelope QPSK-type modulation with 2.4GHz RF input, 3MHz IF and 2MHz bandwidth. The chip operates at 1V Vdd with current scalable from 4.5mA to 1.3mA and chip area of 0.65mm2.

Analysis of OSNR Requirements for Higher Modulation Schemes for Various Local Oscillator Powers

To meet the growing demands of data traffic in long haul communication, it is necessary to efficiently use the low-loss region(C-band) of the optical spectrum, by increasing the no. of optical channels and increasing the bit rate on each channel But narrow pulses occupy higher spectral bandwidth. To circumvent this problem, higher order modulation schemes such as QPSK and QAM can be used to modulate the bits, which increases the spectral efficiency without demanding any extra spectral bandwidth. On the receiver side, to meet a satisfy, a given BER, the received optical signal requires to have minimum OSNR. In our study in this paper, we analyses for different modulation schemes, the OSNR required with and without preamplifier. The theoretical limit of OSNR requirement for a modulation scheme is compared for a given link length by varying the local oscillator (LO) power. Our analysis shows that as we increase the local oscillator (LO) power, the OSNR requirement decreases for a given BER. Also a combination of preamplifier and local oscillator (LO) gives the OSNR closest to theoretical limit.