Systematic studies of the effect of pressure on magnetic and electronic properties of La2/3Ca1/3MnO3 thin films with various thicknesses /

Interest in mixed-valent perovskite manganese oxides of La\-xAxMnO^ (v4-divalent alkaline earth Ca, Sr or Ba), whose unusual properties were discovered nearly a half century ago, has recently been revived. The discovery of the colossal magnetoresistance and pressure effects introduced new questions concerning the complex interplay between lattice structure, magnetism and transport in doped perovskite manganites. In this study, we report our experimental investigations of pressure and magnetic field dependencies of La-i/sCai/sMnOs (LCMO) epitaxial films with various thickness on SrTiO$ substrate. An analysis of film thickness dependency of the resistivity of LCMO epitaxial films under pressure and magnetic field has been performed by taking into account substrate contributions. This verifies the correlation of lattice distortion with magnetic and transport properties. Strong dependencies of Mn — O — Mn bond bending and Mn — O bond stretching with pressure as well as Mn spin alignment with magnetic field, and the lattice distortion induced by the substrate are discussed.

Study of Langmuir-Blodgett Films of Self-Assembled Diblock Copolymers

L'auto-assemblage des copolymères à bloc (CPBs) attire beaucoup d'intérêt grâce à leur capacité de générer spontanément des matériaux ordonnés avec des propriétés uniques. Les techniques Langmuir-Blodgett (LB) et Langmuir-Schaefer (LS) sont couramment utilisées pour produire des monocouches ou des films ultraminces à l'interface air/eau suivi de transfert aux substrats solides. Les films LB/LS de CPBs amphiphiles s'auto-assemblent dans des morphologies variables dépendamment de la composition du CPB ainsi que d'autres facteurs. Dans notre travail, nous avons étudié les films LB/LS de polystyrène-b-poly(4-vinyl pyridine) (PS-P4VP) et leurs complexes supramoléculaires avec le naphtol (NOH), l'acide naphtoïque (NCOOH) et le 3-n-pentadécylphenol (PDP). La première partie de ce mémoire est consacré à l'investigation du PS-P4VP complexé avec le NOH et le NCOOH, en comparaison avec le PS-P4VP seul. Il a été démontré qu'un plateau dans l'isotherme de Langmuir, indicatif d'une transition de premier ordre, est absent à des concentrations élevées des solutions d'étalement des complexes. Cela a été corrélé avec l'absence de morphologie en nodules avec un ordre 2D hexagonal à basse pression de surface. L'ordre au-delà de la pression de cette transition, lorsque présente, change à un ordre 2D carré pour tout les systèmes. La deuxième partie du la mémoire considère à nouveau le système PS-P4VP/ PDP, pour lequel on a démontré antérieurement que la transition dans l'isotherme correspond a une transition 2D d'un ordre hexagonal à un ordre carré. Cela est confirmé par microscopie à force atomique, et, ensuite, on a procédé à une étude par ATR-IR des films LB pour mieux comprendre les changements au niveau moléculaire qui accompagnent cette transition. Il a été constaté que, contrairement à une étude antérieure dans la littérature sur un autre système, il n'y a aucun changement dans l'orientation des chaînes alkyles. Au lieu de cela, on a découvert que, aux pressions au-delà de celle de la transition, le groupe pyridine, qui est orienté à basse pression, devient isotrope et qu'il y a une augmentation des liaisons hydrogènes phénol-pyridine. Ces observations sont rationalisées par un collapse partiel à la pression de transition de la monocouche P4VP, qui à basse pression est ordonné au niveau moléculaire. Cette étude a mené à une meilleure compréhension des mécanismes moléculaires qui se produisent à l'interface air/eau, ce qui fournit une meilleure base pour la poursuite des applications possibles des films LB/LS dans les domaines de nanotechnologie.

Automation of Chemical Spray Pyrolysis Unit and Fabrication of Sprayed CuInS2/In2S3 Solar Cell

Aim of the present work was to automate CSP process, to deposit and characterize CuInS2/In2S3 layers using this system and to fabricate devices using these films.An automated spray system for the deposition of compound semiconductor thin films was designed and developed so as to eliminate the manual labour involved in spraying and facilitate standardization of the method. The system was designed such that parameters like spray rate, movement of spray head, duration of spray, temperature of substrate, pressure of carrier gas and height of the spray head from the substrate could be varied. Using this system, binary, ternary as well as quaternary films could be successfully deposited.The second part of the work deal with deposition and characterization of CuInS2 and In2S3 layers respectively.In the case of CuInS2 absorbers, the effects of different preparation conditions and post deposition treatments on the optoelectronic, morphological and structural properties were investigated. It was observed that preparation conditions and post deposition treatments played crucial role in controlling the properties of the films. The studies in this direction were useful in understanding how the variation in spray parameters tailored the properties of the absorber layer. These results were subsequently made use of in device fabrication process.Effects of copper incorporation in In2S3 films were investigated to find how the diffusion of Cu from CuInS2 to In2S3 will affect the properties at the junction. It was noticed that there was a regular variation in the opto-electronic properties with increase in copper concentration.Devices were fabricated on ITO coated glass using CuInS2 as absorber and In2S3 as buffer layer with silver as the top electrode. Stable devices could be deposited over an area of 0.25 cm2, even though the efficiency obtained was not high. Using manual spray system, we could achieve devices of area 0.01 cm2 only. Thus automation helped in obtaining repeatable results over larger areas than those obtained while using the manual unit. Silver diffusion on the cells before coating the electrodes resulted in better collection of carriers.From this work it was seen CuInS2/In2S3 junction deposited through automated spray process has potential to achieve high efficiencies.

Defect analysis of semiconductor thin films for photovoltaic applications using photo-luminescence and photo-conductivity

The present thesis can be divided into three areas:1) the fabrication of a low temperature photo-luminescence and photoconductivity measuring unit 2) photo-luminescence in the chalcopyrite CulnSez and CulnS2 system for defect and composition analysis and 3) photo-luminescence and photo-conductivity of In:JS3. This thesis shows that photo-luminescence is one of most essential semiconductor characterization tool for a scientific group working on photovoltaics. Tools which can be robust, non-destructive, requiring minimal sample preparation for analysis and most informative of the device applications are sought after by industries and this thesis is towards establishing photo-luminescence as "THE" tool for semiconductor characterization. The possible application of photo-luminescence as a tool for compositional and quality analysis of semiconductor thin films has been worked upon by this thesis. Photo-conductivity complement photo-luminescence and together they provide all the information required for the fabrication of an opto-electronic device.

Enhanced electron-electron correlations in nanometric epitaxial SrRuO3 epitaxial films

Epitaxial and fully strained SrRuO3 thin films have been grown on SrTiO3(100). At initial stages the growth mode is three-dimensional- (3D-)like, leading to a finger-shaped structure aligned with the substrate steps and that eventually evolves into a 2D step-flow growth. We study the impact that the defect structure associated with this unique growth mode transition has on the electronic properties of the films. Detailed analysis of the transport properties of nanometric films reveals that microstructural disorder promotes a shortening of the carrier mean free path. Remarkably enough, at low temperatures, this results in a reinforcement of quantum corrections to the conductivity as predicted by recent models of disordered, strongly correlated electronic systems. This finding may provide a simple explanation for the commonly observed¿in conducting oxides-resistivity minima at low temperature. Simultaneously, the ferromagnetic transition occurring at about 140 K, becomes broader as film thickness decreases down to nanometric range. The relevance of these results for the understanding of the electronic properties of disordered electronic systems and for the technological applications of SrRuO3¿and other ferromagnetic and metallic oxides¿is stressed.

Fabrication of a quantum well heterostructure based on plasma polymerized aniline and its characterization using STM/STS

Two-dimensional electronic systems play a crucial role in modern electronics and offer a multitude of opportunities to study the fundamental phenomena at low dimensional physics. A quantum well heterostructure based on polyaniline (P) and iodine doped polyaniline (I) thin films were fabricated using radio frequency plasma polymerization on indium tin oxide coated glass plate. Scanning probe microscopy and scanning electron microscopy studies were employed to study the morphology and roughness of the polymer thin films. Local electronic density of states (LDOS) of the P–I–P heterostructures is probed using scanning tunnelling spectroscopy (STS). A step like LDOS is observed in the P–I–P heterostructure and is attributed to the quantum well confinement of electrons in the polymer heterostructure.

Fabrication of coaxial TiO2/Sb2S3 nanowire hybrids for efficient nanostructured organic- inorganic thin film photovoltaics

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering

The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-tnagnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N 2/H 2/Arflow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used at relatively low temperatures (T s ≤ 420K). The main effects resulting from the deposition parameters variations on the films properties were related to the presence of hydrogen in the plasma. The X-ray diffraction analysis indicates that the grain sizes (∼15nm) and the crystallized volume fraction significantly decrease when hydrogen is present in the plasma. The optical absorption experiments indicate that the hydrogenated films have absorption edges very similar to that of GaN single crystal films reported in the literature, while the non-hydrogenated samples present larger absorption tails encroaching into the gap energies.

Fabrication of Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 pedestal type waveguide for optical amplifiers

We report, for the first time to our knowledge, experimental results on pedestal waveguides produced with Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 thin films deposited by RF Sputtering for photonic applications. Thin films were deposited using Ar/O-2 plasma at 5 mTorr pressure and RF power of 40 W on substrates of silicon wafers. The definition of the pedestal waveguide structure was made using conventional optical lithography followed by plasma etching. Propagation losses around 2.0 dB/cm and 2.5 dB/cm were obtained at 633 and 1050 nm, respectively, for waveguides in the 20-100 mu m width range. Single-mode propagation was measured for waveguides width up to 10 mu m and 12 mu m, at 633 nm and 1050 nm, respectively; for larger waveguides widths multi-mode propagation was obtained. Internal gain of 5.6 dB at 1530 nm, under 980 nm excitation, was measured for 1.5 cm waveguide length (similar to 3.7 dB/cm). The present results show the possibility of using Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 pedestal waveguide for optical amplifiers. (C) 2014 Elsevier B.V. All rights reserved.

Influence of Mg on the structural and optical properties of LiNbO3 thin films grown by polymeric precursor method

A polymeric precursor solution was used to deposit pure and Mg doped LiNbO3 thin films on sapphire substrates by spin-coating. The effects of magnesium addition on crystallinity, morphology and optical properties of the annealed films were investigated. X-ray diffraction patterns indicate the oriented growth of the films. Phi-scan diffraction evidenced the epitaxial growth with two in-plane variants. AFM studies show that the films are very homogeneous, dense and present smooth surfaces. The refractive index and optical losses obtained by the prism coupling method were influenced by the magnesium addition.

Ion implantation of organic thin films and electronic devices

Organic semiconductors have great promise in the field of electronics due to their low cost in term of fabrication on large areas and their versatility to new devices, for these reasons they are becoming a great chance in the actual technologic scenery. Some of the most important open issues related to these materials are the effects of surfaces and interfaces between semiconductor and metals, the changes caused by different deposition methods and temperature, the difficulty related to the charge transport modeling and finally a fast aging with time, bias, air and light, that can change the properties very easily. In order to find out some important features of organic semiconductors I fabricated Organic Field Effect Transistors (OFETs), using them as characterization tools. The focus of my research is to investigate the effects of ion implantation on organic semiconductors and on OFETs. Ion implantation is a technique widely used on inorganic semiconductors to modify their electrical properties through the controlled introduction of foreign atomic species in the semiconductor matrix. I pointed my attention on three major novel and interesting effects, that I observed for the first time following ion implantation of OFETs: 1) modification of the electrical conductivity; 2) introduction of stable charged species, electrically active with organic thin films; 3) stabilization of transport parameters (mobility and threshold voltage). I examined 3 different semiconductors: Pentacene, a small molecule constituted by 5 aromatic rings, Pentacene-TIPS, a more complex by-product of the first one, and finally an organic material called Pedot PSS, that belongs to the branch of the conductive polymers. My research started with the analysis of ion implantation of Pentacene films and Pentacene OFETs. Then, I studied totally inkjet printed OFETs made of Pentacene-TIPS or PEDOT-PSS, and the research will continue with the ion implantation on these promising organic devices.

Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns.

Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN nanocolumns. In this work, we point out the main technological issues related to the patterning process, mainly surface roughness and cleaning, and mask adhesion to the substrate. We found that each of these factors, process-related, has a dramatic impact on the subsequent selective growth of the columns inside the patterned holes. We compare the performance of e-beam lithography, colloidal lithography, and focused ion beam in the fabrication of hole-patterned masks for ordered columnar growth. These results are applicable to the ordered growth of nanocolumns of different materials.

Ferromagnetic resonance and magnetooptic study of submicron epitaxial Fe(001) stripes

We present a combined magnetooptic and ferromagnetic resonance study of a series of arrays of single-crystalline Fe stripes fabricated by electron beam lithography on epitaxial Au(001)/Fe(001)/MgO(001) films grown by pulsed laser deposition. The analysis of the films revealed a clear fourfold magnetocrystalline anisotropy, with no significant presence of other anisotropy sources. The use of a large series of arrays, with stripe widths between 140 and 1000 nm and separation between them of either 200 nm or 500 nm, allowed studying their magnetization processes and resonance modes as well as the effects of the dipolar interactions on both. The magnetization processes of the stripes were interpreted in terms of a macrospin approximation, with a good agreement between experiments and calculations and negligible influence of the dipolar interactions. The ferromagnetic resonance spectra evidenced two types of resonances linked to bulk oscillation modes, essentially insensitive to the dipolar interactions, and a third one associated with edge-localized oscillations, whose resonance field is strongly dependent on the dipolar interactions. The ability to produce a high quality, controlled series of stripes provided a good opportunity to achieve an agreement between the experiments and calculations, carried out by taking into account just the Fe intrinsic properties and the morphology of the arrays, thus evidencing the relatively small role of other extrinsic factors.