Solid-state memories based on ferroelectric tunnel junctions.

Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10(6) A cm(-2)). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10(4) A cm(-2) at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism.

The effects of a second tunnel on the propagation of ground-borne vibration from an underground railway

Accurate predictions of ground-borne vibration levels in the vicinity of an underground railway are greatly sought in modern urban centers. Yet the complexity involved in simulating the underground environment means that it is necessary to make simplifying assumptions about this environment. One such commonly-made assumption is to model the railway as a single tunnel, despite many underground railway lines consisting of twin-bored tunnels. A unique model for two tunnels embedded in a homogeneous, elastic full space is developed. The vibration response of this two-tunnel system is calculated using the superposition of two displacement fields: one resulting from the forces acting on the invert of a single tunnel, and the other resulting from the interaction between the tunnels. By partitioning of the stresses into symmetric and anti-symmetric mode number components using Fourier decomposition, these two displacement fields can by calculated with minimal computational requirements. The significance of the interactions between twin-tunnels is quantified by calculating the insertion gains that result from the existence of a second tunnel. The insertion-gain results are shown to be localized and highly dependent on frequency, tunnel orientation and tunnel thickness. At some locations, the magnitude of these insertion gains is greater than 20dB. This demonstrates that a high degree of inaccuracy exists in any surface vibration-prediction model that includes only one of the two tunnels. © 2012 Springer.

Solid-state memories based on ferroelectric tunnel junctions

Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10 6 A cm -2). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10 4A cm -2 at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism. © 2012 Macmillan Publishers Limited. All rights reserved.

Centrifuge modelling on long-term behaviour of tunnels in transitional ground

Long-term settlement of tunnels has caused concerns about its influence on tunnel safety and serviceability. Aiming to investigate the long-term behaviour of tunnels against the background of Shanghai metro line, two cases of centrifuge modelling were conducted, with efforts to expose the mechanism affecting the consolidation of the ground. Evenly layered ground and transitional ground strata were set for each case separately and the settlement, lining load and pore water pressure were checked against elapsed time up to 20 years. The results verified some previous findings concerning the settlement and lining load development trend, however, it was also shown that the transitional ground made the tunnel response more complicated. The research is expected to provide some basis for further research on other affecting factors, such as lining permeability. © 2010 Taylor & Francis Group, London.

Methods of monitoring of metro lining in Prague

There are several reasons for monitoring of underground structures and they have already been discussed many times, e.g. from the view of ageing or state after accidental event like flooding of Prague metro in 2002. Monitoring of Prague metro is realized in the framework of international research project sponsored by ESF-S3T. The monitoring methods used in Prague are either classical one or new or developing one. The reason for different monitoring methods is the different precision of each method and also for cross-checking between them and their evaluation. Namely we use convergence, tiltmetres, crackmetres, geophysical methods, laser scanning, computer vision and finally installation of MEMS monitoring devices. In the paper more details of each method and obtained results will be presented. The monitoring methods are complemented by wireless data collection and transfer for real-time monitoring. © 2012 Taylor & Francis Group.

The response of buildings to tunnelling: A case study

The response of buildings to tunnelling induced ground movements is an area of great importance for many urban tunnelling projects. This paper presents the response of two buildings to the construction of a 12 m diameter sprayed concrete lining (SCL) tunnel with face reinforcement, in Italy. Soil and structure displacements were monitored through extensive instrumentation. The settlement response of the two buildings was found to differ significantly, demonstrating both flexible and rigid response mechanisms. Comparison of the building settlement profiles with greenfield settlements enables the soil structure interaction to be quantified. Encouraging agreement between the modification to the greenfield settlement profile displayed by buildings and estimates made from existing predictive tools is observed. Potential issues for infrastructure connected to buildings, arising from the embedment of rigid buildings into the soil, are also highlighted. © 2012 Taylor & Francis Group.

Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene

We report on the topographical and electrical characterisations of 1 nm thick Al2O3 dielectric films on graphene. The Al 2O3 is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O2 atmosphere. The Al 2O3 layer presents no pinholes and is homogeneous enough to act as a tunnel barrier. A resistance-area product in the mega-ohm micrometer-square range is found. Comparatively, the growth of Al 2O3 by evaporation does not lead to well-wetted films on graphene. Application of this high quality sputtered tunnel barrier to efficient spin injection in graphene is discussed. © 2012 American Institute of Physics.

The effect of wind tunnel size on incident shock boundary layer in-teraction experiments

We examine the effects of varying the tunnel width to height ratio on the shock boundary layer interac-tion of an incident oblique shock with a turbulent boundary layer. The computational domain is a simpli-fied representation of typical wind tunnel experiments; the top wall of the tunnel is not modeled; only the flow conditions imposed by the shock are modeled on the top of the computational domain. A hy-pothesis of the expected effect of width to height ratio is presented and tested computationally. All flows are found to be three dimensional for the single shock strength range of width to height ratios considered. The effect of tunnel width is a function of the boundary layer thickness which decreases the effective width.