932 resultados para Surfaces and Interfaces


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Communication: Coatings Of Yellow gamma-WO3 are deposited on glass by APCVD of WOCl4 and either ethanol or ethylacetate at 350-450degreesC. The yellow films show significant photoactivity for the destruction of stearic acid, and photoinduced superhydrophilicity. Preparation of blue reduced WO2.92 films from the same reaction at higher substrate temperatures of 500-600degreesC (Figure) is also found to be possible. These films show no photoactivity, but can be converted into the fully stoichiometric photoactive form simply by heating in air.

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Protons of energies up to 37 MeV have been generated when ultra-intense lasers (up to 10(20) W cm(-2)) interact with hydrogen containing solid targets. These protons can be used to induce nuclear reactions in secondary targets to produce P-emitting nuclei of relevance to the nuclear medicine community, namely C-11 and N-13 via (p, n) and (p, alpha) reactions. Activities of the order of 200 kBq have been measured from a single laser pulse interacting with a thin solid target. The possibility of using ultra-intense lasers to produce commercial amounts of short-lived positron emitting sources for positron emission tomography (PET) is discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

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The zero-range potential model is used to investigate positron collisions and annihilation with molecules. The Kr dimer is considered as an example. It is shown that (i) although positrons do not bind to individual Kr atoms, they do form bound states with Kr. (ii) A sequence of vibrationally excited states of the positron-molecule complex extends into the positron continuum, where it manifests as vibrational Feshbach resonances. (iii) These resonances give a very large contribution to the positron annihilation rate. Even after averaging over the thermal positron energy distribution, the contribution of the lowest Feshbach resonance exceeds that of the non-resonant background by an order of magnitude. © 2002 Elsevier Science B.V. All rights reserved.

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Hard turning (HT) is a material removal process employing a combination of a single point cutting tool and high speeds to machine hard ferrous alloys which exhibit hardness values over 45 HRC. In this paper, a surface defect machining (SDM) method for HT is proposed which harnesses the combined advantages of porosity machining and pulsed laser pre-treatment processing. From previous experimental work, this was shown to provide better controllability of the process and improved quality of the machined surface. While the experiments showed promising results, a comprehensive understanding of this new technique could only be achieved through a rigorous, in depth theoretical analysis. Therefore, an assessment of the SDM technique was carried out using both finite element method (FEM) and molecular dynamics (MD) simulations.
FEM modelling was used to compare the conventional HT of AISI 4340 steel (52 HRC) using an Al2O3 insert with the proposed SDM method. The simulations showed very good agreement with the previously published experimental results. Compared to conventional HT, SDM provided favourable machining outcomes, such as reduced shear plane angle, reduced average cutting forces, improved surface roughness, lower residual stresses on the machined surface, reduced tool–chip interface contact length and increased chip flow velocity. Furthermore, a scientific explanation of the improved surface finish was revealed using a state-of-the-art MD simulation model which suggested that during SDM, a combination of both the cutting action and rough polishing action help improve the machined surface finish.

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Strain-dependent microstructural modifications were observed in epitaxial BiCrO3 (BCO) thin films fabricated on single crystalline substrates, utilizing pulsed laser deposition. The following conditions were employed to modify the epitaxial-strain: (i) in-plane tensile strain, BCOSTO [BCO grown on buffered SrTiO3 (001)] and in-plane compressive strain, BCONGO [BCO grown on buffered NdGaO3 (110)] and (ii) varying BCO film thickness. A combination of techniques like X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (TEM) was used to analyse the epitaxial growth quality and the microstructure of BCO. Our studies revealed that in the case of BCOSTO, a coherent interface with homogeneous orthorhombic phase is obtained only for BCO film with thicknesses, d < 50 nm. All the BCOSTO films with d = 50 nm were found to be strain-relaxed with an orthorhombic phase showing 1/2 <100> and 1/4 <101> satellite reflections, the latter oriented at 45° from orthorhombic diffraction spots. High angle annular dark field scanning TEM of these films strongly suggested that the satellite reflections, 1/2 <100> and 1/4 <101>, originate from the atomic stacking sequence changes (or “modulated structure”) as reported for polytypes, without altering the chemical composition. The unaltered stoichiometry was confirmed by estimating both valency of Bi and Cr cations by surface and in-depth XPS analysis as well as the stoichiometric ratio (1 Bi:1 Cr) using scanning TEM–energy dispersive X-ray analysis. In contrast, compressively strained BCONGO films exhibited monoclinic symmetry without any structural modulations or interfacial defects, up to d ~ 200 nm. Our results indicate that both the substrate-induced in-plane epitaxial strain and the BCO film thickness are the crucial parameters to stabilise a homogeneous BCO phase in an epitaxially grown film.

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Nanomechanical response of a silicon specimen coated with a sp3 crystalline carbon coating (1.8 nm thickness) was investigated using MD simulation. A sharp conical rigid tip was impacted at the speed of 50 m/sec up to a depth of ~80% of the coating thickness. Unlike pure silicon specimen, no metallic phase transformation was observed i.e. a thin coating was able to resist Si-I to Si-II metallic phase transformation signifying that the coating could alter the stress distribution and thereby the contact tribology of the substrate. The stress state of the system, radial distribution function and the load-displacement curve were all aligned with above observations

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InP(1 0 0) surfaces were sputtered under ultrahigh vacuum conditions by 5 keV N2+ ions at an angle of incidence of 41° to the sample normal. The fluence, φ, used in this study, varied from 1 × 1014 to 5 × 1018 N2+ cm-2. The surface topography was investigated using field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). At the lower fluences (φ ≤ 5 × 1016 N2+ cm-2) only conelike features appeared, similar in shape as was found for noble gas ion bombardment of InP. At the higher fluences, ripples also appeared on the surface. The bombardment-induced topography was quantified using the rms roughness. This parameter showed a linear relationship with the logarithm of the fluence. A model is presented to explain this relationship. The ripple wavelength was also determined using a Fourier transform method. These measurements as a function of fluence do not agree with the predictions of the Bradley-Harper theory. © 2004 Elsevier B.V. All rights reserved.

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We present a new regime to generate high-energy quasimonoenergetic proton beams in a "slow-pulse" regime, where the laser group velocity vg<c is reduced by an extended near-critical density plasma. In this regime, for properly matched laser intensity and group velocity, ions initially accelerated by the light sail (LS) mode can be further trapped and reflected by the snowplough potential generated by the laser in the near-critical density plasma. These two acceleration stages are connected by the onset of Rayleigh-Taylor-like (RT) instability. The usual ion energy spectrum broadening by RT instability is controlled and high quality proton beams can be generated. It is shown by multidimensional particle-in-cell simulation that quasimonoenergetic proton beams with energy up to hundreds of MeV can be generated at laser intensities of 1021W/cm2.