共焦扫描系统扫描深度与厚度失真分析

采用几何光学方法对共焦系统扫描时产生的扫描深度与厚度失真进行了理论分析，对名义扫描深度与实际扫描深度之间的关系进行了研究．以若丹明6G薄膜与玻片组成的多层样品为模型，对其进行了模拟计算，得到了扫描深度与厚度失真与系统数值孔径、折射率和样品厚度之间的关系．在实验上分别采用单光子荧光和双光子荧光作为检测信号，在反射式共焦扫描系统上进行了纵向扫描实验，并与模拟计算的结果进行了比较和分析．

Development in laser induced extrinsic absorption damage mechanism of dielectric films

Absorption of host and the temperature-dependence of absorption coefficient have been considered in evaluating temperatures distribution in films, when laser pulse irradiates on films. Absorption of dielectric materials experience three stages with the increase of temperature: multi-photon absorption; single photon absorption; metallic absorption. These different absorption mechanisms correspond to different band gap energies of materials, which will decrease when the temperature of materials increases. evaluating results indicate that absorption of host increases rapidly when the laser pulse will be over. If absorption of host and the temperature-dependence of absorption are considered, the material temperatures in films will be increased by a factor of four.

Mode control in vertical-cavity surface-emitting lasers by post-processing using focused ion-beaih etching

Single-mode emission is achieved in previously multimode gain-guided vertical-cavity surface-emitting lasers (VCSEL's) by localized modification of the mirror reflectivity using focused ion-beam etching. Reflectivity engineering is also demonstrated to suppress transverse mode emission in an oxide-confined device, reducing the spectral width from 1.2 nm to less than 0.5 nm.

Low attenuation of GHz Rayleigh-like surface acoustic waves in ZnO/GaAs systems immersed in liquid helium

Low attenuation of Sezawa modes operating at GHz frequencies in ZnO/GaAs systems immersed in liquid helium has been observed. This unexpected behaviour for Rayleigh-like surface acoustic waves (SAWs) is explained in terms of the calculated depth profiles of their acoustic Poynting vectors. This analysis allows reproduction of the experimental dispersion of the attenuation coefficient. In addition, the high attenuation of the Rayleigh mode is compensated by the strengthening provided by the ZnO layer. The introduction of the ZnO film will enable the operation of SAW-driven single-photon sources in GaAs-based systems with the best thermal stability provided by the liquid helium bath. © 2013 American Institute of Physics.

The influence of substrate on the properties of Er2O3 films grown by magnetron sputtering

The structural properties and the room temperature luminescence of Er2O3 thin films deposited by RF magnetron sputtering have been studied. Films characterized by good morphological properties have been obtained by using a SiO2 interlayer between the film and the Si substrate. The evolution of the properties of the Er2O3 films due to rapid thermal annealing processes in O2 ambient performed at temperatures in the range 800-1200 °C has been investigated in details. The existence of well-defined annealing conditions (temperature of 1100 °C or higher) allowing to avoid the occurrence of extensive chemical reactions with the oxidized substrate has been demonstrated and an increase of the photoluminescence (PL) intensity by about a factor of 40 with respect to the as deposited material has been observed. The enhanced efficiency of the photon emission process has been correlated with the longer lifetime of the PL signal. The same annealing processes are less effective when Er2O3 is deposited on Si. In this latter case interfacial reactions and pit formation occur, leading to a material characterized by stronger non-radiative phenomena that limit the PL efficiency. © 2006 Elsevier B.V. All rights reserved.

Optical and structural properties of Er2O3 films grown by magnetron sputtering

The structural properties and the room temperature luminescence of Er 2O3 thin films deposited by magnetron sputtering have been studied. In spite of the well-known high reactivity of rare earth oxides towards silicon, films characterized by good morphological properties have been obtained by using a SiO2 interlayer between the film and the silicon substrate. The evolution of the properties of the Er2O3 films due to thermal annealing processes in oxygen ambient performed at temperatures in the range of 800-1200°C has been investigated in detail. The existence of well defined annealing conditions (rapid treatments at a temperature of 1100°C or higher) allowing to avoid the occurrence of extensive chemical reactions with the oxidized substrate has been demonstrated; under these conditions, the thermal process has a beneficial effect on both structural and optical properties of the film, and an increase of the photoluminescence (PL) intensity by about a factor of 40 with respect to the as-deposited material has been observed. The enhanced efficiency of the photon emission process has been correlated with the longer lifetime of the PL signal. Finally, the conditions leading to a reaction of Er2O3 with the substrate have been also identified, and evidences about the formation of silicate-like phases have been collected. © 2006 American Institute of Physics.

Degree of fourth-order coherence by double Hanbury Brown-Twiss detections

Photon quantum statistics of light can be shown by the high-order coherence. The fourth-order coherences of various quantum states including Pock states, coherent states, thermal states and squeezed vacuum states are investigated based on a double Banbury Brown Twiss (HBT) scheme. The analytical results are obtained by taking the overall efficiency and background into account.

Holographic fabricated photonic-crystal distributed-feedback quantum cascade laser with near-diffraction-limited beam quality

We demonstrate the fabrication and characterization of photonic-crystal distributed-feedback quantum cascade laser emitting at 4.7 mu m. The tilted rectangular-lattice PCDFB structure was defined using a multi-exposure of two-beam holographic lithography. The devices exhibit the near-diffraction-limited beam emission with the full width at half maximum of the far-field divergence angles about 4.5 degrees and 2.5 degrees for stripe widths of 55 mu m and 95 mu m, respectively. Single-mode emission with a side mode suppression ratio of approximate to 20 dB is achieved in the temperature range (80-210 K). The single-facet output power is above 1 W for a 95 mu m x 2.5 mm laser bar at 85 K in pulsed operation. (C) 2009 Optical Society of America

Two-dimensional photonic band-gap defect modes with deformed lattice

A numerical study of the defect modes in two-dimensional photonic crystals with deformed triangular lattice is presented by using the supercell method and the finite-difference time-domain method. We find the stretch or shrink of the lattice can bring the change not only on the frequencies of the defect modes but also on their magnetic field distributions. We obtain the separation of the doubly degenerate dipole modes with the change of the lattice and find that both the stretch and the shrink of the lattice can make the dipole modes separate large enough to realize the single-mode emission. These results may be advantageous to the manufacture of photonic crystal lasers and provide a new way to realize the single-mode operation in photonic crystal lasers.

High-Q TM whispering-gallery modes in three-dimensional microcylinders

We present a generation condition for realizing high-Q TM whispering-gallery modes (WGMs) in semiconductor microcylinders. For microcylinders with symmetry or weak asymmetry vertical waveguiding, we show that TM WGMs can have a high Q factor, with the magnitude of 10(4) at the radius of the microcylinder of 1 mu m, by three-dimensional numerical simulation. The Q factor of TE WGMs is much less than that of TM WGMs in the semiconductor microcylinders due to a vertical radiation loss caused by mode coupling with the vertical propagating mode. The results open up a possible application of TM WGMs in semiconductor microcylinders for efficient current injection microlasers and single photon sources.

Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots

Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be similar to 0.2 and 200 cm(-1), respectively, for the InGaN QDs. (c) 2006 American Institute of Physics.

Research on the ultrafast fluorescence property of thylakoid membranes of the wild-type and mutant rice

A high yielding rice variety mutant (Oryza sativa L., Zhenhui 249) with low chlorophyll b (Chl b) has been discovered in natural fields. It has a quality character controlled by a pair of recessive genes (nuclear gene). The partial loss of Chl b in content affects the efficiency of light harvest in a light harvest complex (LHC), thus producing the difference of the exciting energy transfer and the efficiency of photochemistry conversion between the mutant and wild-type rice in photosynthetic unit. The efficiency of utilizing light energy is higher in the mutant than that in the wildtype rice relatively. For further discussion of the above-mentioned difference and learning about the mechanism of the increase in the photochemical efficiency of the mutant, the pico-second resolution fluorescence spectrum measurement with delay-frame-scanning single photon counting technique is adopted. Thylakoid membranes of the mutant and the wild-type rice are excited by an Ar+ laser with a pulse width of 120 ps, repetition rate of 4 MHz and wavelength of 514 nm. Compared with the time and spectrum property of exciting fluorescence, conclusions of those ultrafast dynamic experiments are: 1) The speeds of the exciting energy transferred in photo-system I are faster than that in photo-system II in both samples. 2) The speeds of the exciting energy transfer of mutant sample are faster than those of the wildtype. This might be one of the major reasons why the efficiency of photosynthesis is higher in mutant than that in the wild-type rice.

MODELING OF ELECTRON-TUNNELING TIMES IN ASYMMETRIC DOUBLE QUANTUM-WELLS

A scattering process modeled by an imaginary potential V(I) in the wide well of an asymmetric double quantum well structure (DQWS) is used to model the electron tunneling from the narrow well. Taking V(I) approximately -5 meV, the ground resonant level lifetimes of the narrow well in the DQWS are in quantitative agreement with the experimental resonance and non-resonance tunneling times. The corresponding scattering time 66 fs is much faster than the intersubband scattering time of LO-photon emission.

Sagnac interferometry as a probe to the commutation relation of a macroscopic quantum mirror

Single photon Sagnac interferometry as a probe to macroscopic quantum mechanics is considered at the theoretical level. For a freely moving macroscopic quantum mirror susceptible to radiation pressure force inside a Sagnac interferometer, a careful analysis of the input-output relation reveals that the particle spectrum readout at the bright and dark ports encode information concerning the noncommutativity of position and momentum of the macroscopic mirror. A feasible experimental scheme to probe the commutation relation of a macroscopic quantum mirror is outlined to explore the possible frontier between classical and quantum regimes. In the Appendix, the case of Michelson interferometry as a feasible probe is also sketched.

Electron transfer in fast atomic collisions in the presence of an x-ray laser

We consider electron capture in fast collisions between a proton and hydrogen in the presence of an intense x-ray laser whose angular frequency omega is close to v(2)/2, where v is the collision velocity. We show that in such a case laser-induced capture becomes possible and that the latter proceeds via both induced photon emission and photon absorption channels and can, in principle, compete with kinematic and radiative electron capture.