962 resultados para SEMICONDUCTOR CDS
Resumo:
The paper aims to shed light on the role of communication in the European debt crisis. It examines the effects of public statements by ECB Governing Council members, EU officials and national representatives on the PIIGS' CDS and bond yield spreads. The focus lies on dovish statements that signal strong determination in the rescue of indebted countries, and hawkish statements that indicate limited commitment to support the PIIGS and protect its creditors. The analysis of daily data for the period between January 1, 2009 and August 12, 2011 in an EGARCH framework suggests that communication by representatives of Germany, France, and the EU as well as ECB Governing Council members had an immediate impact on both types of securities. No effects.
Resumo:
In this paper, a new cruciform donor–acceptor molecule 2,2'-((5,5'-(3,7-dicyano-2,6-bis(dihexylamino)benzo[1,2-b:4,5-b']difuran-4,8-diyl)bis(thiophene-5,2-diyl))bis (methanylylidene))dimalononitrile (BDFTM) is reported. The compound exhibits both remarkable solid-state red emission and p-type semiconducting behavior. The dual functions of BDFTM are ascribed to its unique crystal structure, in which there are no intermolecular face-to-face π–π interactions, but the molecules are associated by intermolecular CN…π and H-bonding interactions. Firstly, BDFTM exhibits aggregation-induced emission; that is, in solution, it is almost non-emissive but becomes significantly fluorescent after aggregation. The emission quantum yield and average lifetime are measured to be 0.16 and 2.02 ns, respectively. Crystalline microrods and microplates of BDFTM show typical optical waveguiding behaviors with a rather low optical loss coefficient. Moreover, microplates of BDFTM can function as planar optical microcavities which can confine the emitted photons by the reflection at the crystal edges. Thin films show an air-stable p-type semiconducting property with a hole mobility up to 0.0015 cm2V−1s−1. Notably, an OFET with a thin film of BDFTM is successfully utilized for highly sensitive and selective detection of H2S gas (down to ppb levels).
Resumo:
Currently, most cosmic ray data are obtained by detectors on satellites, aircraft, high-altitude balloons and ground (neutron monitors). In our work, we examined whether Liulin semiconductor spectrometers (simple silicon planar diode detectors with spectrometric properties) located at high mountain observatories could contribute new information to the monitoring of cosmic rays by analyzing data from selected solar events between 2005 and 2013. The decision thresholds and detection limits of these detectors placed at Jungfraujoch (Switzerland; 3475 m a.s.l.; vertical cut-off rigidity 4.5 GV) and Lomnicky stıt (Slovakia; 2633 m a.s.l.; vertical cut-off rigidity 3.84 GV) highmountain observatories were determined. The data showed that only the strongest variations of the cosmic ray flux in this period were detectable. The main limitation in the performance of these detectors is their small sensitive volume and low sensitivity of the PIN photodiode to neutrons.
Resumo:
A new method for measuring the linewidth enhancement factor (α-parameter) of semiconductor lasers is proposed and discussed. The method itself provides an estimation of the measurement error, thus self-validating the entire procedure. The α-parameter is obtained from the temporal profile and the instantaneous frequency (chirp) of the pulses generated by gain switching. The time resolved chirp is measured with a polarization based optical differentiator. The accuracy of the obtained values of the α-parameter is estimated from the comparison between the directly measured pulse spectrum and the spectrum reconstructed from the chirp and the temporal profile of the pulse. The method is applied to a VCSEL and to a DFB laser emitting around 1550 nm at different temperatures, obtaining a measurement error lower than ± 8%.
Resumo:
We experimentally demonstrate a sigmoidal variation of the composition profile across semiconductor heterointerfaces. The wide range of material systems (III-arsenides, III-antimonides, III-V quaternary compounds, III-nitrides) exhibiting such a profile suggests a universal behavior. We show that sigmoidal profiles emerge from a simple model of cooperative growth mediated by twodimensional island formation, wherein cooperative effects are described by a specific functional dependence of the sticking coefficient on the surface coverage. Experimental results confirm that, except in the very early stages, island growth prevails over nucleation as the mechanism governing the interface development and ultimately determines the sigmoidal shape of the chemical profile in these two-dimensional grown layers. In agreement with our experimental findings, the model also predicts a minimum value of the interfacial width, with the minimum attainable value depending on the chemical identity of the species.
Resumo:
We propose a pulse shaping and shortening technique for pulses generated from gain switched single mode semiconductor lasers, based on a Mach Zehnder interferometer with variable delay. The spectral and temporal characteristics of the pulses obtained with the proposed technique are investigated with numerical simulations. Experiments are performed with a Distributed Feedback laser and a Vertical Cavity Surface Emitting Laser, emitting at 1.5 µm, obtaining pulse duration reduction of 25-30%. The main asset of the proposed technique is that it can be applied to different devices and pulses, taking advantage of the flexibility of the gain switching technique.
Resumo:
Cuando se usa fotocatálisis, tanto para procesos de descontaminación como para síntesis química específica y (especialmente) para aprovechamiento de energía solar, importa aprovechar un rango muy amplio de luz visible. Para ello se estudian hoy principalmente óxidos (con o sin adición de aniones que disminuyen el gap como el nitrógeno); los sulfuros, como el bien conocido CdS, tienen estabilidad limitada, sobre todo para procesos de fotooxidación en presencia de agua en los que sufren corrosión. Aquí se presentan estudios sobre sulfuros como el In2S3 y el SnS2 (con bandgaps respectivos de 2.0 y 2.2 eV [1]) cuyos metales tienen mayor valencia y coordinación octaédrica, y en los que por ambos factores cabe suponer que su red cristalina, más compacta, tendrá mayor estabilidad. Se muestra también que mediante un dopado importante con vanadio se puede extender su rango espectral de fotoactividad, lo que se atribuye a la formación de una banda intermedia que posibilita el uso de dos fotones con energía inferior al bandgap para conseguir una excitación completa en el semiconductor; este proceso ha sido propuesto últimamente para aumentar el rendimiento de las células fotovoltaicas.
Resumo:
We present an educational software addressed to the students of optical communication courses, for a simple visualization of the basic dynamic processes of semiconductor lasers. The graphic interface allows the user to choose the laser and the modulation parameters and it plots the laser power output and instantaneous frequency versus time. Additionally, the optical frequency variations are numerically shifted into the audible frequency range in order to produce a sound wave from the computer loudspeakers. Using the proposed software, the student can simultaneously see and hear how the laser intensity and frequency change, depending on the modulation and device parameters.