CuIn1-xAlxSe2 Solar Cells Fabricated on the Flexible Substrates by CoSputtering and Modified Selenization

CuIn1-xAlxSe2 (CIAS) thin films were grown on the flexible stainless steel substrates, by de co-sputtering from the elemental cathodes. CuInAl alloyed precursor films were selenized both by noble gas assisted Se vapor transport and vacuum evaporation of Se. X-ray diffraction, scanning electron microscopy and UV-visible absorption spectroscopy were used to characterize the selenized films The composition (x=Al/Al+In) with 0 <= x <= 0.65 was varied by substituting Al with indium in CuInSe2. Lattice parameters, average crystallite sizes and compact density of the films compared to CuInSe2, decreased and (112) peak shifted to higher Bragg's angle, with Al incorporation. Cells were fabricated with the device structure SS/Mo/CIAS/CdS/iZno-AZO/Al. Best cell showed the efficiency of 6.8%, with x=0.13, Eg=1.17 eV, fill factor 45.04, short circuit current density J 30 mA/cm(2).

Solution processable diketopyrrolopyrrole (DPP) cored small molecules with BODIPY end groups as novel donors for organic solar cells

Two novel triads based on a diketopyrrolopyrrole (DPP) central core and two 4,4-difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) units attached by thiophene rings have been synthesised having high molar extinction coefficients. These triads were characterised and used as donor materials in small molecule, solution processable organic solar cells. Both triads were blended with PC71BM as an acceptor in different ratios by wt% and their photovoltaic properties were studied. For both the triads a modest photovoltaic performance was observed, having an efficiency of 0.65%. Moreover, in order to understand the ground and excited state properties and vertical absorption profile of DPP and BODIPY units within the triads, theoretical DFT and TDDFT calculations were performed.

Heterogeneity in Dye-TiO2 Interactions Dictate Charge Transfer Efficiencies for Diketopyrrolopyrrole-Based Polymer Sensitized Solar Cells

Power conversion efficiency of a solar cell is a complex parameter which usually hides the molecular details of the charge generation process. For rationally tailoring the overall device efficiency of the dye-sensitized solar cell, detailed molecular understanding of photoinduced reactions at the dye-TiO2 interface has to be achieved. Recently, near-IR absorbing diketopyrrolopyrrole-based (DPP) low bandgap polymeric dyes with enhanced photostabilities have been used for TiO2 sensitization with moderate efficiencies. To improve the reported device performances, a critical analysis of the polymerTiO(2) interaction and electron transfer dynamics is imperative. Employing a combination of time-resolved optical measurements complemented by low temperature EPR and steady-state Raman spectroscopy on polymerTiO(2) conjugates, we provide direct evidence for photoinduced electron injection from the TDPP-BBT polymer singlet state into TiO2 through the C-O group of the DPP-core. A detailed excited state description of the electron transfer process in films reveals instrument response function (IRF) limited (<110 fs) charge injection from a minor polymer fraction followed by a picosecond recombination. The major fraction of photoexcited polymers, however, does not show injection indicating pronounced ground state heterogeneity induced due to nonspecific polymerTiO(2) interactions. Our work therefore underscores the importance of gathering molecular-level insight into the competitive pathways of ultrafast charge generation along with probing the chemical heterogeneity at the nanoscale within the polymerTiO2 films for optimizing photovoltaic device efficiencies.

Narrow band gap conjugated polymer for improving the photovoltaic performance of P3HT:PCBM ternary blend bulk heterojunction solar cells

A new D-A structured conjugated polymer (PBDO-T-TDP) based on electron-rich benzo 1,2-b:4,5-b'] difuran (BDO) containing conjugated alkylthiophene side chains with an electron-deficient diketopyrrolopyrrole (DPP) derivative is designed and synthesized. The polymer shows a narrow band gap with broad UV-Visible absorption spectra, which is in contrast to that of the P3HT:PCBM binary blend. Furthermore, its energy levels can meet the energetic requirement of the cascaded energy levels of P3HT and PCBM. Therefore, PBDO-T-TDP is used as a sensitizer in P3HT: PCBM based BHJ solar cells and its effect on their photovoltaic properties was investigated by blending them together at various weight ratios. It is observed that the resulting ternary blend system exhibited a significant improvement in the device performance (similar to 3.10%) as compared with their binary ones (similar to 2.15%). Such an enhancement in the ternary blend system is ascribed to their balanced hole and electron mobility along with uniform distribution of PBDO-T-TDP in the blend system, as revealed by organic field effect transistors and AFM studies.

Nanorod to quantum dot conversion in ZnO dispersions with co-surfactants

A chemically-induced nanorod to quantum dot transition is reported in ZnO. This transition is achieved using co-surfactants in a marginally polar solvent in chimie douce (soft chemical) conditions. This is different from the physical instability driven transitions reported so far in metal nanowires and polymers. We propose a suitable mechanism for the observed phenomenon.

Fabrication of back contacts using laser writer and photolithography for inscribing textured solar cells

Semiconductor fabrication process begins with photolithography. Preparing a photo mask is the key process step in photolithography. The photo mask was fabricated by inscribing patterns directly onto a soda lime glass with the help of a laser beam, as it is easily controllable. Laser writer LW405-A was used for preparing the mask in this study. Exposure wavelength of 405 nm was used, with which 1.2 mu m feature size can be written in direct write-mode over the soda lime glass plate. The advantage of using the fabricated mask is that it can be used to design back contacts for thin film Photovoltaic (PV) solar cells. To investigate the process capability of LW405-A, same pattern with different line widths was written on soda lime glass samples at different writing speeds. The pattern was inscribed without proximity effect and stitching errors, which was characterized using optical microscope and field emission scanning electron microscope (FE-SEM). It was proven that writing speed of a mask-writer is decided according to the intended feature size and line width. As the writing speed increases, the edges of the patterns become rougher due to uneven scattering of the laser beam. From the fabricated mask, the solar cell can be developed embedding both the contacts at the bottom layer, to increase the absorption of solar radiation on the top surface effectively by increasing light absorption area.

New single-source precursor for bismuth sulfide and its use as low-cost counter electrode material for dye-sensitized solar cells

One new homoleptic Bi(dtc)(3)] (1) (dtc = 4-hydroxypiperdine dithiocarbamate) has been synthesized and characterized by microanalysis, IR, UV-Vis, H-1 and C-13 spectroscopy and X-ray crystallography. The photoluminescence spectrum for the compound in DMSO solution was recorded. The crystal structure of 1 displayed distorted octahedral geometry around the Bi(III) center bonded through sulfur atoms of the dithiocarbamate ligands. TGA indicates that the compound decomposes to a Bi and Bi-S phase system. The Bi and Bi-S obtained from decomposition of the compound have been characterized by pXRD, EDAX and SEM. Solvothermal decomposition of 1 in the absence and presence of two different capping agents yielded three morphologically different Bi2S3 systems which were deployed as counter-electrode in dye-sensitized solar cells (DSSCs). (C) 2015 Elsevier B.V. All rights reserved.

Robust, metallic Pd17Se15 and Pd7Se4 phases from a single source precursor and their use as counter electrodes in dye sensitized solar cells

Thin films of conducting palladium selenide phases (Pd17Se15 and Pd7Se4) are prepared using a single source molecular precursor by thermolysis. Varying the mole ratios of palladium and selenium precursors results in palladium organo-selenolate complexes which on thermolysis at different temperatures yield Pd17Se15 and Pd7Se4 phases that are very stable and adherent to the substrate. The organo-selenolate complexes are characterized using small angle XRD, Se-77 NMR and thermogravimetric analysis (TGA). The palladium selenide films are characterized by various techniques such as XRD, XPS, TEM and SEM. Electrical conductivities of the films are determined using the four probe method. The strong adherence of the films to glass substrates coupled with high corrosion resistant behavior towards strong acid and alkaline environments render them to be very effective as electrocatalysts. The catalytic activity towards the I-3(-)/I- redox couple, which is an important reaction in the regeneration of the dye in a dye-sensitized solar cell, is studied. Between the two phases, the Pd17Se15 film shows superior activity as the counter electrode for dye sensitized solar cells with a photocurrent conversion efficiency of 7.45%.

Impact of lifetime control on the threshold of quantum dot lasers

Despite significant improvements in their properties as emitters, colloidal quantum dots have not had much success in emerging as suitable materials for laser applications. Gain in most colloidal systems is short lived, and needs to compete with biexcitonic decay. This has necessitated the use of short pulsed lasers to pump quantum dots to thresholds needed for amplified spontaneous emission or lasing. Continuous wave pumping of gain that is possible in some inorganic phosphors has therefore remained a very distant possibility for quantum dots. Here, we demonstrate that trilayer heterostructures could provide optimal conditions for demonstration of continuous wave lasing in colloidal materials. The design considerations for these materials are discussed in terms of a kinetic model. The electronic structure of the proposed dot architectures is modeled within effective mass theory.

Plasmon-mediated emergence of collective emission and enhanced quantum efficiency in quantum dot films

We present experimental and theoretical results on monolayer colloidal cadmium selenide quantum dot films embedded with tiny gold nanoparticles. By varying the density of the embedded gold nanoparticles, we were able to engineer a plasmon-mediated crossover from emission quenching to enhancement regime at interparticle distances for which only quenching of emission is expected. This crossover and a nonmonotonic variation of photoluminescence intensity and decay rate, in experiments, is explained in terms of a model for plasmon-mediated collective emission of quantum emitters which points to the emergence of a new regime in plasmon-exciton interactions. The presented methodology to achieve enhancement in optical quantum efficiency for optimal doping of gold nanoparticles in such ultrathin high-density quantum dot films can be beneficial for new-generation displays and photodetectors.

CuIn1-xAlxSe2 Thin Films Grown by Co-Sputtering and Modified Selenization: Application in Flexible Solar Cells

Thin films of CuIn1-xAlxSe2 (CIAS) were grown on the flexible 10 micrometer thin stainless steel substrates, by dc co-sputtering from the elemental cathodes, followed by annealing with modified selenization. CuInAl alloyed precursor films were selenized both by noble gas assisted Se vapor transport in a tubular furnace and vacuum evaporation of Se in an evaporation chamber. CIAS thin films were optimized for better adhesion. X-ray diffraction, scanning electron microscopy, and UV-visible absorption spectroscopy were used to characterize the selenized films. The composition of CIAS films was varied by substituting In with Al in CuInSe2 (CIS) from 0 <= x <= 0.65 (x = Al/Al+In). Lattice parameters, average crystallite sizes, and compact density of the films, decreased when compared to CIS and (112) peak shifted to higher Bragg's angle, upon Al incorporation. The dislocation density and strain were found to increase with Al doping. Solar cells with SS/Mo/CIAS/CdS/iZnO: AZnO/Al configuration were fabricated and were tested for current-voltage characteristics for various `x' values, under Air Mass 1.5 Global one sun illumination. The best CIAS solar cell showed the efficiency of 6.8%, with x = 0.13, Eg = 1.17 eV, fill factor 45.04, and short circuit current density J(sc) 30 mA/cm(2).

InN Quantum Dot Based Infra-Red Photodetectors

Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithography steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

CuIn1-xAlxSe2 Thin Films Grown by Co-Sputtering and Modified Selenization: Application in Flexible Solar Cells

Thin films of CuIn1-xAlxSe2 (CIAS) were grown on the flexible 10 micrometer thin stainless steel substrates, by dc co-sputtering from the elemental cathodes, followed by annealing with modified selenization. CuInAl alloyed precursor films were selenized both by noble gas assisted Se vapor transport in a tubular furnace and vacuum evaporation of Se in an evaporation chamber. CIAS thin films were optimized for better adhesion. X-ray diffraction, scanning electron microscopy, and UV-visible absorption spectroscopy were used to characterize the selenized films. The composition of CIAS films was varied by substituting In with Al in CuInSe2 (CIS) from 0 <= x <= 0.65 (x = Al/Al+In). Lattice parameters, average crystallite sizes, and compact density of the films, decreased when compared to CIS and (112) peak shifted to higher Bragg's angle, upon Al incorporation. The dislocation density and strain were found to increase with Al doping. Solar cells with SS/Mo/CIAS/CdS/iZnO: AZnO/Al configuration were fabricated and were tested for current-voltage characteristics for various `x' values, under Air Mass 1.5 Global one sun illumination. The best CIAS solar cell showed the efficiency of 6.8%, with x = 0.13, Eg = 1.17 eV, fill factor 45.04, and short circuit current density J(sc) 30 mA/cm(2).

Investigations on the physical origin of lateral photovoltage in PbS-colloidal quantum dot/Si heterojunctions

Restricted area heterojunctions, an array of lead sulfide colloidal quantum dots (PbS-CQDs) and crystalline silicon, are studied with a non-destructive remote contact light beam induced current (RC-LBIC) technique. As well as getting good quality active area images we observed an anomalous unipolar signal response for the PbS-CQD/n-Si devices and a conventionally expected bipolar signal profile for the PbS-CQD/p-Si devices. Interestingly, our simulation results consistently yielded a unipolar and bipolar nature in the signals related to the PbSCQD/n-Si and PbS-CQD/p-Si heterostructures, respectively. In order to explain the physical mechanism involved in the unipolar signal response of the PbS-CQD/n-Si devices, we propose a model based on the band alignment in the heterojunctions, in addition to the distribution of photo-induced excess majority carriers across the junction. Given that the RC-LBIC technique is well suited to this context, the presence of these two distinct mechanisms (the bipolar and unipolar nature of the signals) needs to be considered in order to have a better interpretation of the data in the characterization of an array of homo/heterojunctions.

Low Threshold Quantum Dot Lasers

Semiconductor quantum dots have replaced conventional inorganic phosphors in numerous applications. Despite their overall successes as emitters, their impact as laser materials has been severely limited. Eliciting stimulated emission from quantum dots requires excitation by intense short pulses of light typically generated using other lasers. In this Letter, we develop a new class of quantum dots that exhibit gain under conditions of extremely low levels of continuous wave illumination. We observe thresholds as low as 74 mW/cm(2) in lasers made from these materials. Due to their strong optical absorption as well as low lasing threshold, these materials could possibly convert light from diffuse, polychromatic sources into a laser beam.