Souw Gan Tjiang atawa Pemboenoeh jang Samar-Soewatoe tjerita jang belon brapa lama betoel-betoel soedah kedjadian di Djawa Tengah v. 01

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Power converters in WBG device technology for automotive applications and characterization setups for GaN power transistors

This PhD dissertation envisages the design of innovative power converters exploiting WBG devices to get state-of-the-art performance in products intended for industrial applications of automotive field. The collaborations with different specialized companies, provided the opportunity to access commercially-available state-of-the-art SiC and GaN technologies and the possibility to realize innovative converter prototypes. Concerning SiC technology, the complete design of a $350kW$ Battery Emulator instrument in collaboration with a company leader in the automotive testing sector, was carried out from scratch exploiting state-of-the-art SiC power-modules, planar magnetics and top-notch MCU technologies. Discrete high-voltage GaN switches were exploited in the Power Supplies design for automotive charger application to target improved performances compared to the market state-of-the-art. Specifically, two high-efficiency prototypes, an AC/DC converter and a DC/DC converter of $7.5kW$, have been realized for this purpose. To further investigate the characteristics of state-of-the-art GaN power devices two measurement set-ups have been designed. In particular, the trapping phenomenon causing the collapse of drain current during ON-state with a consequent degradation of ON-resistance has been analyzed.

Long-term reliability of power GaN HEMTS

The world is quickly changing, and the field of power electronics assumes a pivotal role in addressing the challenges posed by climate change, global warming, and energy management. The introduction of wide-bandgap semiconductors, particularly gallium nitride (GaN), in contrast to the traditional silicon technology, is leading to lightweight, compact and evermore efficient circuitry. However, GaN technology is not mature yet and still presents reliability issues which constrain its widespread adoption. Therefore, GaN reliability is a hotspot for the research community. Extensive efforts have been directed toward understanding the physical mechanisms underlying the performance and reliability of GaN power devices. The goal of this thesis is to propose a novel in-circuit degradation analysis in order to evaluate the long-term reliability of GaN-based power devices accurately. The in-circuit setup is based on measure-stress-measure methodology where a high-speed synchronous buck converter ensures the stress while the measure is performed by means of full I-V characterizations. The switch from stress mode to characterization mode and vice versa is automatic thanks to electromechanical and solid-state relays controlled by external unit control. Because these relays are located in critical paths of the converter layout, the design has required a comprehensive study of electrical and thermal problems originated by the use of GaN technology. In addition, during the validation phase of the converter, electromagnetic-lumped-element circuit simulations are carried out to monitor the signal integrity and junction temperature of the devices under test. However, the core of this work is the in-circuit reliability analysis conducted with 80 V GaN HEMTs under several operating conditions of the converter in order to figure out the main stressors which contribute to the device's degradation.

Design e simulazione di un convertitore DC-DC per applicazioni automotive implementato mediante tecnologia GaN

L’obiettivo dell’elaborato è quello di presentare una soluzione di collegamento ed interfacciamento tra il supercondensatore (SC) dell’HESS (sistema ibrido di accumulo dell’energia situato all’interno di un veicolo elettrico) e il DC-link (bus che fornisce la potenza necessaria all’inverter che pilota il motore elettrico) attraverso un convertitore DC-DC ad alta efficienza che utilizzi tecnologie di potenza al nitruro di gallio (GaN). Il convertitore presentato è un convertitore DC-DC bidirezionale in configurazione Half-Bridge, esso dovrà funzionare in modalità Boost, ogni qualvolta il motore richieda energia extra dal SC, in modalità Buck per ricaricare il SC durante la frenata rigenerativa. In seguito ad un’introduzione ai veicoli elettrici, alla loro architettura e al perché il SC è così fondamentale, verrà presentata una breve introduzione ai convertitori di potenza (Capitolo 1). Si passerà poi alla presentazione delle tecnologie GaN mostrando come esse rappresentino il futuro dell’elettronica di potenza grazie ai loro numerosi vantaggi (Capitolo 2). Nel capitolo 3 si entrerà nel vivo della progettazione, è qui che sarà progettata ed implementata la soluzione proposta. Verrà effettuata una prima simulazione del circuito, tenendo conto degli effetti parassiti dei soli componenti, attraverso l’ausilio del software LTSpice. Il Capitolo 4 prevede una breve introduzione alle tecniche di layout, utili nella costruzione del circuito stampato presentata all’interno del medesimo capitolo. Il PCB sarà modellato mediante un secondo software denominato KiCAD. Infine, nel Capitolo 5, si procederà con la simulazione elettromagnetica del circuito stampato, essa permetterà di individuare gli effetti parassiti dovuti alle non idealità del layout e di mostrare l’effettiva differenza di efficienza tra un caso semi-ideale e un caso semi-reale.

Implementazione di un sistema di controllo atto a ottimizzare l’efficienza di convertitori DC-DC impiegati in ambito Automotive e realizzati con tecnologia GaN

Lo scopo del presente progetto di ricerca è quello di dimostrare quelli che potrebbero essere i miglioramenti nell’adottare tecnologie GaN nei convertitori di potenza, soffermandosi sull’ambito Automotive. Si è dunque progettato, simulato ed infine analizzato un sistema di conversione bidirezionale DC-DC. Le prestazioni ottime sono state poi raggiunte attraverso l’introduzione di un sistema di controllo in grado di garantire, in ogni condizione, il miglior funzionamento possibile che garantisca il soddisfacimento delle richieste da parte del veicolo. Questo consentirà quindi di gestire il funzionamento del convertitore sia nelle fasi di scarica che in quelle di rigenerazione (regenerative braking). Al convertitore, è stato introdotto anche un controllo adattivo per la ricerca del dead-time ottimo dei segnali di pilotaggio dei transistor.

Regimes de precipitação na América do Sul: uma revisão bibliográfica

Como a América do Sul se estende por diferentes latitudes e possui formas de relevo variadas, proporciona a atuação e o desenvolvimento de diferentes sistemas atmosféricos, os quais contribuem para a não homogeneidade climática da região. Portanto o objetivo deste estudo é apresentar uma revisão dos sistemas atmosféricos que atuam nos diferentes setores do continente sul-americano e que contribuem para a precipitação.

Campo de Terezin: o sonho como resistência

Reflexão sobre “O Campo de Terezin”, de Ecléa Bosi, mostrando uma área de confinamento de judeus com contornos especiais. Erigido para abrigar pessoas notáveis, como cientistas, heróis de guerra e artistas, ganhou feições de uma cidade exuberante, para quem de fora vinha lhe visitar, sobretudo nas artes e nos esportes. Internamente, administrava-se o terror da definição de quem iria ser escolhido para sobreviver ou para morrer. Ler o texto é como sentir o pulsar da vida em seus encantos - a música, a vibração, a alegria - mas, fundamentalmente, experimentar seus horrores: a dor, o silêncio e a morte. Não é possível percorrer estas páginas sem perder o fôlego e partilhar com a autora a aflição dos seus atores.

New Measurement of the pi(0) Radiative Decay Width

High precision measurements of the differential cross sections for pi(0) photoproduction at forward angles for two nuclei, (12)C and (208)Pb, have been performed for incident photon energies of 4.9-5.5 GeV to extract the pi(0) -> gamma gamma decay width. The experiment was done at Jefferson Lab using the Hall B photon tagger and a high-resolution multichannel calorimeter. The pi(0) -> gamma gamma decay width was extracted by fitting the measured cross sections using recently updated theoretical models for the process. The resulting value for the decay width is Gamma(pi(0) -> gamma gamma) = 7.82 +/- 0.14(stat) +/- 0.17(syst) eV. With the 2.8% total uncertainty, this result is a factor of 2.5 more precise than the current Particle Data Group average of this fundamental quantity, and it is consistent with current theoretical predictions.

Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach

We present parameter-free calculations of electronic properties of InGaN, InAlN, and AlGaN alloys. The calculations are based on a generalized quasichemical approach, to account for disorder and composition effects, and first-principles calculations within the density functional theory with the LDA-1/2 approach, to accurately determine the band gaps. We provide precise results for AlGaN, InGaN, and AlInN band gaps for the entire range of compositions, and their respective bowing parameters. (C) 2011 American Institute of Physics. [doi:10.1063/1.3576570]

Annealing of ion implanted gallium nitride

In this paper, we examine Si and Te ion implant damage removal in GaN as a function of implantation dose, and implantation and annealing temperature. Transmission electron microscopy shows that amorphous layers, which can result from high-dose implantation, recrystallize between 800 and 1100 °C to very defective polycrystalline material. Lower-dose implants (down to 5 × 1013 cm – 2), which are not amorphous but defective after implantation, also anneal poorly up to 1100 °C, leaving a coarse network of extended defects. Despite such disorder, a high fraction of Te is found to be substitutional in GaN both following implantation and after annealing. Furthermore, although elevated-temperature implants result in less disorder after implantation, this damage is also impossible to anneal out completely by 1100 °C. The implications of this study are that considerably higher annealing temperatures will be needed to remove damage for optimum electrical properties. ©1998 American Institute of Physics.

The lectin KM+ induces corneal epithelial wound healing in rabbits

Neutrophil influx is essential for corneal regeneration (Gan et al. 1999). KM+, a lectin from Artocarpus integrifolia, induces neutrophil migration (Santos-de-Oliveira et al. 1994). This study aims at investigating a possible effect of KM+ on corneal regeneration in rabbits. A 6,0-mm diameter area of debridement was created on the cornea of both eyes by mechanical scraping. The experimental eyes received drops of KM+ (2.5 mu g/ml) every 2 h, The control eyes received buffer, The epithelial wounded areas of the lectin-treated and untreated eyes were stained with fluorescein, photographed and measured, The animals were killed 12 h (group 1, n = 5), 24 h (group 2, n = 10) and 48 h (group 3, n = 5) after the scraping. The corneas were analysed histologically (haematoxylin and eosin and immunostaining for proliferation cell nuclear antigen, p&3, vascular endothelial growth factor, c-Met and laminin). No significant differences were found at the epithelial gap between treated and control eyes in the group 1. However, the number of neutrophils in the wounded area was significantly higher in treated eyes in this group. Three control and seven treated eyes were healed completely and only rare neutrophils persisted in the corneal stroma in group 2. No morphological distinction was observed between treated and control eyes in group 3. In treated corneas of group 2, there was an increase in immunostaining of factors involved in corneal healing compared to controls, Thus, topical application of KM+ may facilitate corneal epithelial wound healing in rabbits by means of a mechanism that involves increased influx of neutrophils into the wounded area induced by the lectin.

Mecanismos de gestão de recursos humanos no setor público: as implicações da austeridade

Dissertação de Mestrado apresentada ao Instituto Politécnico do Porto para cumprimento dos requisitos necessários à obtenção do grau de Mestre em Gestão das Organizações – Ramo de Gestão de Empresas Orientador: Professor Doutor Pedro Nunes Orientador: Professor Henrique Curado