Properties of NaxCoO2 /

Polycrysttdline samples of NaiCoOa were prepared using the "Rapid heat-up" method. One set of samples was annealed in flowing O2, while the other set in flowing Argon. X-Ray diffraction measurements indicated a stable phase of Nao.7Co02 mixed with C03O4 for all the samples even though they differed in concentration of Na. Argon annealed samples were insulators, whereas the ones annealed in O2 were metallic. Most of the measurements were performed on the sample Nao.7Co02, because it is the host compound for the superconductor sample Nao.35Co02-H20. Magnetization measurement showed that the magnetic moment decreased with increasing sodium concentration. This is due to the existence of C03O4 in samples with Na^ 0.7. As sodium concentration decreases, the magnetic moment increases due to the increasing concentration of C03O4 and its large magnetic moment. Magnetization measurements showed that the magnetic moment of Nao.7Co02 is field-dependent in low fields eind field-independent in fields higher than 100 G. Resistivity changes with temperature (dp/dT) increased with increasing Na concentration. Also resistivity measurements were performed under different hydrostatic pressures on Nao.7Co02. Two transitions were observed; one at a temperature Ti ~20 K and the other at T2 ^280 K, the transition at Ti has a magnetic origin and the one at T2 is a structiural transition. It was noticed that pressure aJfects resistivity of the sample. At higher pressures resistivity changes faster with temperature. Magnetoresistance measurement showed a small change in the resistivity, especially at lower temperatures. A novel layered superconductor Nao.35Co02H20 was prepared using de-intercalation of Na from the host compound Nao.7Co02. FVom the temperature dependence of the magnetization, the superconducting transition temperature and lower critictil field have been estimated as Tc=4.12 K and Hci=66 G, respectively.

Magnetic properties of the Biâ Srâ CaCuâ Oâ single crystal

The Bi2Sr2CaCu20g single crystal with a superconducting transition temperature equal to 90 ± 2 K was prepared. The irreversibility line of the single crystal for a mgnetic field direction along the c-axis and T* in the ab-plane was determined. The reduced temperature (l - T ) is proportional to H 1.1 for fields below 004 T and proportional to HO.09 for fields above 0.4 T. The zero temperature upper critical field Hc2(0) and coherence length ~ (0) were determined from the magnetization meaurements to be H-lC2=35.9T , H//C2=31.2T, ~c(0)=35.0 A, and ~ab(0)=32.5A,and from the magnetoresistance measurements to be H-lc2 = 134.6T , H//C2=55.5T '~c(0)=38.1 A, and ~ab(0)=2404 A for both directions of the applied magnetic field. The results obtained for Hc2(0) and ~(O) are not reliable due to the rounding that the single crystal exhibits in the magnetization and magnetoresistance curves. The magnetization relaxation of the single crystal was investigated, and was found to be logarithmic in time, and the relaxation rate increases with temperature up to 50 -60 K, then decreases at higher temperatures.

RF magnetron sputtered perovskite oxide electrodes for Ferroelectric RAM

The main objective of this thesis work is to optimize the growth conditions for obtaining crystalline and conducting Lao.5Sro.5Co03 (LSCO) and Lao.5Sro.5Coo.5.5Nio.5O3 (LSCNO) thin films at low processing temperatures. The films are prepared by radio frequency magnetron sputtering under various deposition conditions. The thin films were used as electrodes for the fabrication of ferroelectric capacitors using BaO.7SrO.3 Ti03 (BST) and PbZro.52 Tio.4803 (PZT). The structural and transport properties of the La1_xSrxCo03 and Lao.5Sro.5Co1_xNix03 are also investigated. The characterization of the bulk and the thin films were performed using different tools. A powder X-ray diffractometer was used to analyze the crystalline nature of the material. The transport properties were investigated by measuring the temperature dependence of resistivity using a four probe technique. The magnetoresistance and thermoelectric power were also used to investigate the transport properties. Atomic force microscope was used to study the surface morphology and thin film roughness. The ferroelectric properties of the capacitors were investigated using RT66A ferroelectric tester.

Magnetic phase separation in ordered alloys

We present a lattice model to study the equilibrium phase diagram of ordered alloys with one magnetic component that exhibits a low temperature phase separation between paramagnetic and ferromagnetic phases. The model is constructed from the experimental facts observed in Cu3-xAlMnx and it includes coupling between configurational and magnetic degrees of freedom that are appropriate for reproducing the low temperature miscibility gap. The essential ingredient for the occurrence of such a coexistence region is the development of ferromagnetic order induced by the long-range atomic order of the magnetic component. A comparative study of both mean-field and Monte Carlo solutions is presented. Moreover, the model may enable the study of the structure of ferromagnetic domains embedded in the nonmagnetic matrix. This is relevant in relation to phenomena such as magnetoresistance and paramagnetism

Thermische Stabilität und Modifizierung der magnetischen Austauschanisotropie in Schichtsystemen

In dünnen Schichtsystemen, in denen es Grenzflächen zwischen antiferromagnetischen (AF) und ferromagnetischen (FM) Bereichen gibt, kann eine unidirektionale magnetische Anisotropie beobachtet werden: die Austauschanisotropie, auch "Exchange-Bias Effekt" genannt. Die Austauschanisotropie ist die Folge einer magnetischen Kopplung zwischen AF und FM. Makroskopisch äußert sich diese Anisotropie in einer Verschiebung der Magnetisierungskurve entlang der Magnetfeldachse. Anwendung findet die Austauschanisotropie z. B. in Spin-Valve Sensoren, deren Funktionsprinzip auf dem Riesen-Magnetowiderstand (engl. giant magnetoresistance, GMR) beruht. Die (thermische) Stabilität der Austauschanisotropie ist eine wichtige Voraussetzung für technische Anwendungen. Im Rahmen dieser Arbeit wurde untersucht, durch welche Materialeigenschaften die Austauschanisotropie in Schichtsystemen mit antiferromagnetischem Nickeloxid (NiO) bestimmt wird. Die Schichten wurden durch (reaktive) Kathodenzerstäubung hergestellt. Durch Variation der Depositionsbedingungen wurden Zusammensetzung und Struktur der NiO-Schichten verändert. Die Ergebnisse systematischer Analysen dieser Größen werden aufgeführt. Der Vergleich dieser Materialanalysen mit magnetischen Messungen an NiO/NiFe Schichtsystemen fšuhrt zu dem Ergebnis, dass die chemische Zusammensetzung und die Struktur der NiO-Schichten die thermische Stabilität der Austauschanisotropie entscheidend beeinflussen. Es wird zusätzlich gezeigt, dass die Stabilität der Austauschanisotropie durch einen Temperprozess im Anschluss an die Herstellung der Schichtsysteme entscheidend verbessert werden kann. Thermisch aktivierte, magnetische Relaxationsprozesse können außerdem zur Erhöhung der Austauschanisotropie führen. Des Weiteren werden zwei neuartige Methoden zur Modifizierung der Austauschanisotropie vorgestellt. Dabei wird gezeigt, dass durch die Bestrahlung der Schichtsysteme mit Helium-Ionen die magnetischen Eigenschaften der Schichtsysteme gezielt verändert und optimiert werden können. Der Einfluss der Ionenbestrahlung auf die Austauschanisotropie in NiO/NiFe Schichtsystemen und auf den Magnetowiderstand in FeMn basierten Spin-Valves steht dabei im Vordergrund der experimentellen Untersuchungen. Eine weitere Möglichkeit zur Modifizierung der Austauschanisotropie ist die Bestrahlung der Schichtsysteme mit kurzen Laserpulsen. Durch einen thermomagnetischen Prozess kann die Austauschanisotropie lokal verändert werden. Experimentelle Ergebnisse von diesem hier erstmals verwendeten Verfahren werden vorgestellt und interpretiert. Mit den beiden genannten Methoden ist es möglich, die Eigenschaften der Austauschanisotropie in Schichtsystemen nachträglich gezielt zu modifizieren.

Fractional quantum Hall effect in second subband of a 2DES

In the present paper we report on the experimental electron sheet density vs. magnetic field diagram for the magnetoresistance R(xx) of a two-dimensional electron system (2DES) with two occupied subbands. For magnetic fields above 9T, we found fractional quantum Hall levels centered around the filing factor v = 3/2 in both the two occupied electric subbands. We focused specially on the fractional levels of the second subband, whose experimental values of the magnetic field B of their minima do not obey a periodicity law in 1/|B-B(c)|, where B(c) is the critical field at the filling factor v = 3/2, and we explain this fact entirely in the framework of the composite fermions theory. We use a simple theoretical model to give a possible explanation for the fact. Copyright (c) EPLA, 2011

Ac and dc magnetotransport properties of the phase-separated La(0.6)Y(0.1)Ca(0.3)MnO(3) manganite

The physical properties of the La(0.6)Y(0.1)Ca(0.3)MnO(3) compound have been investigated, focusing on the magnetoresistance phenomenon studied by both dc and ac electrical transport measurements. X-ray diffraction and scanning electron microscopy analysis of ceramic samples prepared by the sol-gel method revealed that specimens are single phase and have average grain size of similar to 0.5 mu m. Magnetization and 4-probe dc electrical resistivity rho(T,H) experiments showed that a ferromagnetic transition at T(C) similar to 170 K is closely related to a metal-insulator (MI) transition occurring at essentially the same temperature T(MI). The magnetoresistance effect was found to be more pronounced at low applied fields (H <= 2.5 T) and temperatures close to the MI transition. The ac electrical transport was investigated by impedance spectroscopy Z(f,T,H) under applied magnetic field H up to 1 T. The Z(f,T,H) data exhibited two well-defined relaxation processes that exhibit different behaviors depending on the temperature and applied magnetic field. Pronounced effects were observed close to T (C) and were associated with the coexistence of clusters with different electronic and magnetic properties. In addition, the appreciable decrease of the electrical permittivity epsilon`(T,H) is consistent with changes in the concentration of e(g) mobile holes, a feature much more pronounced close to T (C).

Disorder-based graphene spintronics

The use of the spin of the electron as the ultimate logic bit-in what has been dubbed spintronics-can lead to a novel way of thinking about information flow. At the same time single-layer graphene has been the subject of intense research due to its potential application in nanoscale electronics. While defects can significantly alter the electronic properties of nanoscopic systems, the lack of control can lead to seemingly deleterious effects arising from the random arrangement of such impurities. Here we demonstrate, using ab initio density functional theory and non-equilibrium Green`s functions calculations, that it is possible to obtain perfect spin selectivity in doped graphene nanoribbons to produce a perfect spin filter. We show that initially unpolarized electrons entering the system give rise to 100% polarization of the current due to random disorder. This effect is explained in terms of different localization lengths for each spin channel which leads to a new mechanism for the spin filtering effect that is disorder-driven.

Integer and fractional microwave induced resistance oscillations in a 2D system with moderate mobility

We report on integer and fractional microwave-induced resistance oscillations in a 2D electron system with high density and moderate mobility, and present results of measurements at high microwave intensity and temperature. Fractional microwave-induced resistance oscillations occur up to fractional denominator 8 and are quenched independently of their fractional order. We discuss our results and compare them with existing theoretical models. (C) 2009 Elsevier B.V. All rights reserved.

TRANSPORT IN A BILAYER SYSTEM AT HIGH LANDAU FILLING FACTOR

We have studied Shubnikov de Haas oscillations and the quantum Hall effect in GaAs-double well structures in tilted magnetic fields. We found strong magnetoresistance oscillations as a function of an in-plane magnetic field B(parallel to) at nu = 4N + 3 and nu = 4N + 1 filling factors. At low perpendicular magnetic field B(perpendicular to), the amplitude of the conventional Shubnikov-de Haas (SdH) oscillations also exhibits B(parallel to)-periodic dependence at fixed values of B(perpendicular to). We interpret the observed oscillations as a manifestation of the interference between cyclotron orbits in different quantum wells.

Symmetry controlled spin polarized conductance in Au nanowires

The fact that the resistance of propagating electrons in solids depends on their spin orientation has led to a new field called spintronics. With the parallel advances in nanoscience, it is now possible to talk about nanospintronics. Many works have focused on the study of charge transport along nanosystems, such as carbon nanotubes, graphene nanoribbons, or metallic nanowires, and spin dependent transport properties at this scale may lead to new behaviors due to the manipulation of a small number of spins. Metal nanowires have been studied as electric contacts where atomic and molecular insertions can be constructed. Here we describe what might be considered the ultimate spin device, namely, a Au thin nanowire with one Co atom bridging its two sides. We show that this system has strong spin dependent transport properties and that its local symmetry can dramatically change them, leading to a significant spin polarized conductance.

Collapse of rho (xx) Ringlike Structures in 2DEGs Under Tilted Magnetic Fields

In the quantum Hall regime, the longitudinal resistivity rho (xx) plotted as a density-magnetic-field (n (2D) -B) diagram displays ringlike structures due to the crossings of two sets of spin split Landau levels from different subbands [see, e.g., Zhang et al., in Phys. Rev. Lett. 95:216801, 2005. For tilted magnetic fields, some of these ringlike structures ""shrink"" as the tilt angle is increased and fully collapse at theta (c) a parts per thousand 6A degrees. Here we theoretically investigate the topology of these structures via a non-interacting model for the 2DEG. We account for the inter Landau-level coupling induced by the tilted magnetic field via perturbation theory. This coupling results in anticrossings of Landau levels with parallel spins. With the new energy spectrum, we calculate the corresponding n (2D) -B diagram of the density of states (DOS) near the Fermi level. We argue that the DOS displays the same topology as rho (xx) in the n (2D) -B diagram. For the ring with filling factor nu=4, we find that the anticrossings make it shrink for increasing tilt angles and collapse at a large enough angle. Using effective parameters to fit the theta=0A degrees data, we find a collapsing angle theta (c) a parts per thousand 3.6A degrees. Despite this factor-of-two discrepancy with the experimental data, our model captures the essential mechanism underlying the ring collapse.

Interference effects in nonplanar wires with a two-dimensional electron gas

We have studied the universal conductance fluctuations (UCF) due to quantum interface in a two-dimensional electron gas (2DEG) grown on the substrates with pre-patterned, sub-micron wires. The dependence of UCF on the angle between the direction of the magnetic field and the substrate has been investigated. We found, that magnetoresistance traces for different angles are completely uncorrelated. A non-planar character of electron motion is responsible for these angular conductance fluctuations. We compared the experimental results with a simple geometrical model.

Propriedades Físicas do Semicondutor Bi2Te3

Thermoelectric Refrigerators (TEC Thermoelectric Cooling) are solid-state heat pumps used in applications where stabilization of temperature cycles or cooling below the room temperature are required. TEC are based on thermoelectric devices, and these in turn, are based on the Peltier effect, which is the production of a difference in temperature when an electric current is applied to a junction formed by two non-similar materials. This is one of the three thermoelectric effects and is a typical semiconductor junction phenomenon. The thermoelectric efficiency, known as Z thermoelectric or merit figure is a parameter that measures the quality of a thermoelectric device. It depends directly on electrical conductivity and inversely on the thermal conductivity. Therefore, good thermoelectric devices have typically high values of electrical conductivity and low values of thermal conductivity. One of the most common materials in the composition of thermoelectric devices is the semiconductor bismuth telluride (Bi2Te3) and its alloys. Peltier plates made up by crystals of semiconductor P-type and N-type are commercially available for various applications in thermoelectric systems. In this work, we characterize the electrical properties of bismuth telluride through conductivity/resistivity of the material, and X-rays power diffraction and magnetoresistance measurements. The results were compared with values taken from specific literature. Moreover, two techniques of material preparation, and applications in refrigerators, are discussed

Multicamadas Ferromagnéticas Nanométricas Periódicas e Quasiperiódicas

We present a study of nanostructured magnetic multilayer systems in order to syn- thesize and analyze the properties of periodic and quasiperiodic structures. This work evolved from the deployment and improvement of the sputtering technique in our labora- tories, through development of a methodology to synthesize single crystal ultrathin Fe (100) films, to the final goal of growing periodic and quasiperiodic Fe/Cr multilayers and investi- gating bilinear and biquadratic exchange coupling between ferromagnetic layer dependence for each generation. Initially we systematically studied the related effects between deposition parameters and the magnetic properties of ultrathin Fe films, grown by DC magnetron sput- tering on MgO(100) substrates. We modified deposition temperature and film thickness, in order to improve production and reproduction of nanostructured monocrystalline Fe films. For this set of samples we measured MOKE, FMR, AFM and XPS, with the aim of investi- gating their magnocrystalline and structural properties. From the magnetic viewpoint, the MOKE and FMR results showed an increase in magnetocrystalline anisotropy due to in- creased temperature. AFM measurements provided information about thickness and surface roughness, whereas XPS results were used to analyze film purity. The best set of parame- ters was used in the next stage: investigation of the structural effect on magnetic multilayer properties. In this stage multilayers composed of interspersed Fe and Cr films are deposited, following the Fibonacci periodic and quasiperiodic growth sequence on MgO (100) substrates. The behavior of MOKE and FMR curves exhibit bilinear and biquadratic exchange coupling between the ferromagnetic layers. By computationally adjusting magnetization curves, it was possible to determine the nature and intensity of the interaction between adjacent Fe layers. After finding the global minimum of magnetic energy, we used the equilibrium an- gles to obtain magnetization and magnetoresistance curves. The results observed over the course of this study demonstrate the efficiency and versatility of the sputtering technique in the synthesis of ultrathin films and high-quality multilayers. This allows the deposition of magnetic nanostructures with well-defined magnetization and magnetoresistance parameters and possible technological applications