Superfocusing of high-M2 semiconductor laser beams:experimental demonstration

The focusing of multimode laser diode beams is probably the most significant problem that hinders the expansion of the high-power semiconductor lasers in many spatially-demanding applications. Generally, the 'quality' of laser beams is characterized by so-called 'beam propagation parameter' M2, which is defined as the ratio of the divergence of the laser beam to that of a diffraction-limited counterpart. Therefore, M2 determines the ratio of the beam focal-spot size to that of the 'ideal' Gaussian beam focused by the same optical system. Typically, M2 takes the value of 20-50 for high-power broad-stripe laser diodes thus making the focal-spot 1-2 orders of magnitude larger than the diffraction limit. The idea of 'superfocusing' for high-M2 beams relies on a technique developed for the generation of Bessel beams from laser diodes using a cone-shaped lens (axicon). With traditional focusing of multimode radiation, different curvatures of the wavefronts of the various constituent modes lead to a shift of their focal points along the optical axis that in turn implies larger focal-spot sizes with correspondingly increased values of M2. In contrast, the generation of a Bessel-type beam with an axicon relies on 'self-interference' of each mode thus eliminating the underlying reason for an increase in the focal-spot size. For an experimental demonstration of the proposed technique, we used a fiber-coupled laser diode with M2 below 20 and an emission wavelength in ~1μm range. Utilization of the axicons with apex angle of 140deg, made by direct laser writing on a fiber tip, enabled the demonstration of an order of magnitude decrease of the focal-spot size compared to that achievable using an 'ideal' lens of unity numerical aperture. © 2014 SPIE.

Polarization dynamics of bound state solitons in a carbon nanotubes mode locked erbium doped fiber laser

Optical solitons are important in the modern photonics. Passively mode locked erbium doped fiber lasers provide a neat platform to study soliton dynamics. Soliton interaction dynamics is important for various applications and has quite different manifestations, including e.g. such as bound state solitons [1], soliton rains [2]. Soliton interactions have been observed with different mode locking approaches such as figure-of-eight [3] and nonlinear polarization rotation [4]. Carbon nanotubes (CNT) have recently been widely applied as an efficient saturable absorber for passively mode locked fiber lasers. We have recently studied the polarization dynamics in a CNT mode locked vector soliton erbium doped fiber laser [5]. So far, the polarization dynamics of bound state solitons have yet to be investigated. In this report, we present a wide range of polarization dynamics of bound state solitons generated in a CNT mode locked erbium doped fiber laser. The fiber laser consists of ∼ 2 m highly doped erbium fiber (Liekki Er80-8/125) as the gain medium, an optical isolator to ensure unidirectional oscillation anda 980 nm laser diode is used to pump the gain through the 1550/980 nm wavelength division multiplexer. A fused 10:90 coupler is used to couple 10 % of the light out of the laser cavity and two in-line polarization controllers (NewPort) are used to control the birefringence of the cavity and polarization of the pump light respectively. The total cavity length is ∼ 7.8 m indicating a 25.7 MHz fundamental repetition rate. © 2013 IEEE.

Higher-order soliton generation in hybrid mode-locked thulium-doped fiber ring laser

A thulium-doped all-fiber laser passively mode-locked by the co-action of nonlinear polarization evolution and single-walled carbon nanotubes operating at 1860-1980 nm wavelength band is demonstrated. Pumped with the single-mode laser diode at 1.55 μm laser generates near 500-fs soliton pulses at repetition rate ranging from 6.3 to 72.5 MHz in single-pulse operation regime. Having 3-m long cavity average output power reached 300 mW, giving the peak power of 4.88 kW and the pulse energy of 2.93 nJ with slope efficiency higher than 30%. At a 21.6-m long ring cavity average output power of 117 mW is obtained, corresponding to the pulse energy up to 10.87 nJ and a pulse peak power of 21.7 kW, leading to the higher-order soliton generation.

Passive mode locking in erbium-doped fibre laser by carbon nanotubes

Passively mode locked fibre lasers have a variety of applications ranging from telecommunication to medical photonics. Carbon nanotubes (CNTs) have attracted recently a great deal of attention as a promising solution for saturable absorber elements required for laser mode locking (see e.g. [1-3] and references therein). CNTs can be used as a saturable absorber in passively mode locked fibre laser directly [1,2] or as a CNTs polymer composites [3]. An attractive feature of CNT-based solutions in fibre lasers is a possibility to maintain the compactness, robustness of all-fibre format and low cost through using all standard telecom compatible components. The two important technical challenges in such type of lasers are: (i) to achieve stable polarization properties of the generated radiation without using complex control elements, and, (ii) to avoid low frequency instabilities of the mode-locked pulse train. In this paper we report results of the experiments on mode-locked soliton fibre laser using the following standard components: 1m of highly doped erbium fibre (Liekki Er80-8/125) serves as the gain medium with nominal absorption of 80 dB/m at 1530 nm; a 976 nm laser diode providing up to 310mW power is used to pump the laser via a 980/1550 wavelength division multiplexing; an isolator is employed to ensure single direction oscillation; SMF-28 is used to create necessary amount of anomalous dispersion to form soliton pulse making the total cavity length around 7.83 m; the CNT-polyvinyl alcohol polymer saturable absorber sandwiched in the FC/PC connector is used as a mode-locker device (see [3] for details). © 2011 IEEE.

COMPREHENSIVE ELECTRICAL/OPTICAL/THERMAL CHARACTERIZATIONS OF HIGH POWER LIGHT EMITTING DIODES AND LASER DIODES

Thermal characterizations of high power light emitting diodes (LEDs) and laser diodes (LDs) are one of the most critical issues to achieve optimal performance such as center wavelength, spectrum, power efficiency, and reliability. Unique electrical/optical/thermal characterizations are proposed to analyze the complex thermal issues of high power LEDs and LDs. First, an advanced inverse approach, based on the transient junction temperature behavior, is proposed and implemented to quantify the resistance of the die-attach thermal interface (DTI) in high power LEDs. A hybrid analytical/numerical model is utilized to determine an approximate transient junction temperature behavior, which is governed predominantly by the resistance of the DTI. Then, an accurate value of the resistance of the DTI is determined inversely from the experimental data over the predetermined transient time domain using numerical modeling. Secondly, the effect of junction temperature on heat dissipation of high power LEDs is investigated. The theoretical aspect of junction temperature dependency of two major parameters – the forward voltage and the radiant flux – on heat dissipation is reviewed. Actual measurements of the heat dissipation over a wide range of junction temperatures are followed to quantify the effect of the parameters using commercially available LEDs. An empirical model of heat dissipation is proposed for applications in practice. Finally, a hybrid experimental/numerical method is proposed to predict the junction temperature distribution of a high power LD bar. A commercial water-cooled LD bar is used to present the proposed method. A unique experimental setup is developed and implemented to measure the average junction temperatures of the LD bar. After measuring the heat dissipation of the LD bar, the effective heat transfer coefficient of the cooling system is determined inversely. The characterized properties are used to predict the junction temperature distribution over the LD bar under high operating currents. The results are presented in conjunction with the wall-plug efficiency and the center wavelength shift.

Optical gain at 1550 nm from colloidal solution of Er3+-Yb3+ codoped NaYF4 nanocubes

We demonstrated optical amplification at 1550 nm with a carbon tetrachloride solution of Er3+-Yb3+ codoped NaYF4 nanocubes synthesized with solvo-thermal route. Upon excitation with a 980 nm laser diode, the nanocube solution exhibited strong near-infrared emission by the I-4(13/2) -> I-4(15/2) transition of Er3+ ions due to energy transfer from Yb3+ ions. We obtained the highest optical gain coefficient at 1550 nm of 0.58 cm(-1) for the solution with the pumping power of 200 mW. This colloidal solution might be a promising candidate as a liquid medium for optical amplifier and laser at the optical communication wavelength. (C) 2009 Optical Society of America

激光二极管抽运的国产Yb:YAG陶瓷激光器

研究了国产Yb:YAG陶瓷的激光输出特性。激光器采用激光二极管(LD)纵向同轴抽运Yb:YAG陶瓷样品,样品的掺杂原子数分数为1%,一端面镀940 nm和1030 nm双增透膜,另一端面镀1030 nm增透膜,激光器在1031 nm处获得了近红外激光输出。实验中分别测试了Yb:YAG陶瓷在不同输出透射率(T=4%,8%,10%)条件下的激光输出特性。整个实验过程中,激光器维持基横模运转。当输出透射率为10%,吸收的抽运功率为9 W时,激光器获得最大的激光输出功率为1.63 W,相应的斜率效率为23.2%。

Infrared luminescence properties of bismuth-doped barium silicate glasses

Infrared (IR) luminescence covering 1.1 to similar to 1.6 mu m wavelength region was observed from bismuth-doped barium silicate glasses, excited by a laser diode at 808 nm wavelength region, at room temperature. The peak of the IR luminescence appears at 1325 nm. A full width half-maximum (FWHM) and the lifetime of the fluorescence is more than 200 nm and 400 mu s, respectively. The fluorescence intensity increases with Al2O3 content, but decreases with BaO content. We suggest that the IR luminescence should be ascribed to the low valence state of bismuth Bi2+ or Bi+, and Al3+ ions play an indirect dispersing role for the infrared luminescent centers.

New optoelectronic devices using GaAs-GaAlAs epitaxy

Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis. They are:

1. Embedded Epitaxy

This is a technique of selective multilayer growth of GaAs- Ga_1-xAl_xAs single crystal structures through stripe openings in masking layers on GaAs substrates. This technique results in prismatic layers of GaAs and Ga_1-xAl_xAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The dependence of the growth habit on the orientation of the stripe openings has been studied. Room temperature embedded double heterostructure lasers have been fabricated using this technique. Threshold current densities as low as 1.5 KA/cm² have been achieved.

2. Barrier Controlled PNPN Laser Diode

It is found that the I-V characteristics of a PNPN device can be controlled by using potential barriers in the base regions. Based on this principle, GaAs-GaAlAs heterostructure PNPN laser diodes have been fabricated. GaAlAs potential barriers in the bases control not only the electrical but also the optical properties of the device. PNPN lasers with low threshold currents and high breakover voltage have been achieved. Numerical calculations of this barrier controlled structure are presented in the ranges where the total current is below the holding point and near the lasing threshold.

3. Injection Lasers on Semi-Insulating Substrates

GaAs-GaAlAs heterostructure lasers fabricated on semi-insulating substrates have been studied. Two different laser structures achieved are: (1) Crowding effect lasers, (2) Lateral injection lasers. Experimental results and the working principles underlying the operation of these lasers are presented. The gain induced guiding mechanism is used to explain the lasers' far field radiation patterns. It is found that Zn diffusion in Ga_1-xAl_xAs depends on the Al content x, and that GaAs can be used as the diffusion mask for Zn diffusion in Ga_1-xAl_xAs. Lasers having very low threshold currents and operating in a stable single mode have been achieved. Because these lasers are fabricated on semi-insulating substrates, it is possible to integrate them with other electronic devices on the same substrate. An integrated device, which consists of a crowding effect laser and a Gunn oscillator on a common semi-insulating GaAs substrate, has been achieved.

矩阵理论在半导体激光器耦合中的应用

傍轴近似下的光学矩阵理论，可以简化光束传输计算过程，使光学系统设计更为方便。将ABCD变换矩阵方法引入到耦合光学系统的设计中，运用高斯光束的ABCD法则，详尽地给出了某一耦合方式下的半导体激光器耦合入单模光纤系统的设计；另一方面，对系统的耦合损耗与耦合距离的关系进行了理论计算，并把计算结果与最近的实验报道做了比较，它们基本相吻合，说明此方法是可行的、合理的。从整个设计及理论计算来看，ABCD矩阵方法减少了复杂的计算，从而简化了设计过程，与通常的衍射计算相比，它不失为一种方便、有效的方法，同时它对生产半导体

用于大范围高精度实时位移测量的半导体激光干涉仪

现有的半导体激光干涉仪存在测量精度与测量范围的矛盾。本文提出一种新的实时位移测量半导体激光干涉仪，并分析了干涉仪的测量原理。首先提出一种新的解相算法，它通过两路实时相位探测电路从干涉信号中得到待测量相位，消除了光强波动、初始光程差、电路放大倍数、调制深度、Bessel函数等参数对测量精度的影响，提高了测量精度。其次，提出一种扩大测量范围的技术，并用解包裹电路得到真实相位和待测量的位移, 将测量范围从半个波长提高到几个波长。在实验中，测得喇叭的峰峰值为2361.7nm，重复测量精度为2.56nm，测量时间为

Small-dynamic-angle measurement using tangent relationship and phase-modulating technique

A method using two prisms for measurement of small dynamic angles is proposed in which the measurement is based on a simple tangent equation and a phase-modulating interferometer with a laser diode to measure dynamic optical path differences with higher accuracy. Owing to the simple tangent equation, the symmetry requirement on the two prisms in the optical configuration is eliminated, and easy measurement of the separations between two parallel beams with a position-sensitive detector is achieved. Small-dynamic-angle measurements are experimentally demonstrated with high accuracy. (C) 2007 Society of Photo-Optical Instrumentation Engineers.

ABCD matrix for reflection and refraction of Gaussian beams at the surface of a parabola of revolution

We report the formulation of an ABCD matrix for reflection and refraction of Gaussian light beams at the surface of a parabola of revolution that separate media of different refractive indices based on optical phase matching. The equations for the spot sizes and wave-front radii of the beams are also obtained by using the ABCD matrix. With these matrices, we can more conveniently design and evaluate some special optical systems, including these kinds of elements. (c) 2005 Optical Society of America

A phase-shifting vectorial-shearing interferometer with wedge plate phase-shifter

We present a novel phase-shifting vectorial-shearing interferometer with a wedge plate phase-shifter. The interferometer is based on a modified Mach-Zehnder configuration; the common-path nature makes it capable of testing the wavefront of a short coherence-length light source, such as a laser diode. Vectorial shear (shearing in the x and y directions simultaneously) in an arbitrary direction is introduced by inserting two wedge plates orthogonally in two arms, respectively. One of the wedge plates is split into two parts (parallel part and wedge part); phase shift is produced by moving the wedge part in contact along the parallel part. The moving distance for a 2 pi phase shift is a few millimetres in specific conditions. The wedge plate phase-shifter increases the moving distance for phase shift and makes the control of phase shift relatively easy. We also discuss the lateral shear error and phase shift errors induced by wedge plates. The lateral shear error is small enough to be ignored; the phase shift error is determined mainly by the wedge angle error. Lastly, we give the experimental results of phase-shifting interference fringes in vectorial shear mode.

基于人工神经网络的大量程光纤实时距离干涉测量仪

提出了一种基于人工神经网络的全光纤化大量程实时距离干涉测量仪．采用双正弦相位调制方法，即通过同时调制半导体激光器的波长和干涉仪的光程差实现外差测量。为了扩大干涉仪的测量范围和消除输出信号中的交叉敏感，采用人工神经网络进行信号处理，把两路经过初步解调的干涉信号作为输入样本，物体距离的实际值作为输出样本，对神经网络进行训练，以使其具有良好的推广能力．实验结果表明神经网络的使用不仅扩大了距离的测量范围而且提高了测量精度．