968 resultados para Film thickness


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Hybrid TiO2/ormosil waveguiding films have been prepared by the sol-gel method at low thermal treatment temperature of 150° C. The influence of processing parameters including the molar ratios of titanium butoxide (Ti(OBu)(4))/3-glycidoxypropyltrimethoxysilane (GLYMO) and H2O/Ti(OBu)(4) (expressed as R), especially aging of sot on the optical properties was investigated. The optical properties of films were measured with scanning electron microscope (SEM), UV/VIS/NIR spectrophotometer (UV-Vis), m-line and the scattering-detection method. The results indicate that the film thickness increases with the increase of sol aging time, but the variation of refractive index as a function of sot aging time depends on the relative ratios of GLYMO to Ti(OBu)(4). Higher transmittance and lower attenuation of the planar waveguide can be obtained in the sol with lower Ti(OBu)(4) contents and shorter aging time.

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借助于VC++编程从理论上模拟分析了膜厚监控误差以及监控片不均匀性对光学膜厚监控的影响。结果表明,膜厚监控误差和监控片的不均匀性都对监控曲线有影响;随着膜层层数的增加,监控片不均匀性逐渐增大。实验制备了多层规整薄膜并对其监控曲线进行了分析,分析表明考虑到膜厚监控误差和监控片不均匀性后计算的光学监控曲线和镀膜过程实测光学监控曲线吻合较好。这说明膜厚监控误差和监控片不均匀性是引起监控曲线与理论值偏离的重要因素。介绍了如何计算考虑膜厚监控误差和监控片不均匀性后的理论监控曲线。这将对膜厚自动监控,尤其是对非规整膜

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对表面热透镜技术测量光学薄膜弱吸收低频调制时不同基底对测量的影响进行了理论分析。用Lambda-900分光光度计测量了K9和石英基底的Ti3O5单层膜的吸收值,将该组样品作为定标片;用表面热透镜装置分别测量了BK7和石英空白基底及HfO2,ZnO两组不同基底不同厚度单层膜样品的吸收。通过分析比较同一工艺条件下镀制的不同基底薄膜样品用与其同种和不同种基底定标片定标测量的结果,表明在低频测量时需要用与测量样品同种基底的定标片定标;不同厚度样品的测量结果表明,在不能严格满足热薄条件时,测量结果需引入修正值。

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通过传输矩阵法分析了材料介电常数的变化对于单缺陷结构的磁光多层膜隔离器性能的响,并提出了一种多缺陷结构的磁光多层膜结构.同单缺陷结构相比,多缺陷结构的旋转角的频谱响应带宽有很大增加,对于材料介电常数变化的宽容性得到了一个数量级的提高.同时这种多缺陷的结构对于膜层厚度的变化和入射角度也有很好的宽容性.

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HfO2薄膜是用电子束蒸发方法制备的,利用ZYGO干涉仪测量了基片镀膜前后曲率半径的变化,计算了薄膜应力。对样品进行了XRD测试,讨论了膜厚对薄膜残余应力的影响。结果发现不同厚度HfO2薄膜的残余应力均为张应力,应力值随薄膜厚度的增加而减小,当薄膜厚度达到一定值后,应力值趋于稳定。从微观结构变化对实验结果进行了分析,发现微结构演变引起的本征应力变化是引起薄膜残余应力改变的主要因素。

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Non-hydrogenated tetrahedral amorphous carbon (ta-C) has shown superior field emission characteristics. The understanding of the emission mechanism has been hindered by the lack of any directly measured data on the band offsets between ta-C and Si. In this paper results from direct in situ X-ray photoemission spectroscopy (XPS) measurements of the band-offset between ta-C and Si are reported. The measurements were carried out using a filtered cathodic vacuum arc (FCVA) deposition system attached directly to an ultra-high vacuum (UHV) XPS chamber via a load lock chamber. Repeated XPS measurements were carried out after monolayer depositions on in situ cleaned Si substrates. The total film thickness for each set of measurements was approximately 5 nm. Analysis of the data from undoped ta-C on n and p Si show the unexpected result that the conduction band barrier between Si and ta-C remains around 1.0 eV, but that the valence band barrier changes from 0.7 to 0.0 eV. The band line up derived from these barriers suggests that the Fermi level in the ta-C lies 0.3 eV above the valence band on both p and n+Si. The heterojunction barriers when ta-C is doped with nitrogen are also presented. The implications of the heterojunction energy barrier heights for field emission from ta-C are discussed.

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Seeded zone-melt recrystallization using a dual electron beam system has been performed on silicon-on-insulator material, which was prepared with single-crystal silicon filling of the seed windows by selective epitaxial growth. The crystal quality has been assessed by a variety of microscopic techniques, and it is shown that single-crystal films 0.5-1.0 μm thick over 1.0 μm of isolating oxide may be prepared by this method. These films have considerably less lateral variation in thickness than standard material, in which the windows are not so filled. The filling method is suitable for both single- and multiple-layer silicon-on-insulator, and gives the advantages of excellent layer uniformity after recrystallization and improved planarity of the whole chip structure. Experiments using various amounts of seed window filling have shown that the lateral variations of silicon film thickness seen in unplanarized material are due to stress relief in the cap oxide when the silicon film is molten, rather than the effect previously postulated in which they were assumed to be due to the contraction of silicon on melting.

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A model of lubricated cold strip rolling (1, 2) is extended to the thin foil regime. The model considers the evolution of asperity geometry and lubricant pressure through the bite, treating the strip using a conventional slab model. The elastic deflections of the rolls are coupled into the problem using an elastic finite element model. Friction between the roll and the asperities on the strip is modelled using the Coulomb and Tresca friction factor approaches. The shear stress in the Coulomb friction model is limited to the shear yield stress of the strip. A novel modification to these standard friction laws is used to mimic slipping friction in the reduction regions and sticking friction in a central neutral zone. The model is able to reproduce the sticking and slipping zones predicted by Fleck et al. (3). The variation of rolling load, lubricant film thickness and asperity contact area with rolling speed is examined, for conditions typical of rolling aluminium foil from a thickness of 50 to 25 μm. T he contact area and hence friction rises as the speed drops, leading to a large increase in rolling load. This increase is considerably more marked using Coulomb friction as compared with the friction factor approach. Forward slip increases markedly as the speed falls and a significant sticking region develops.

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A mechanical model of cold rolling of foil is coupled with a sophisticated tribological model. The tribological model treats the "mixed" lubrication regime of practical interest, in which there is "real" contact between the roll and strip as well as pressurized oil between the surfaces. The variation of oil film thickness and contact ratio in the bite is found by considering flattening of asperities on the foil and the build-up of hydrodynamic pressure through the bite. The boundary friction coefficient for the contact areas is taken from strip drawing tests under similar tribological conditions. Theoretical results confirm that roll load and forward slip decrease with increasing rolling speed due to the decrease in contact ratio and friction. The predictions of the model are verified using mill trials under industrial conditions. For both thin strip and foil, the load predicted by the model has reasonable agreement with the measurements. For rolling of foil, forward slip is overestimated. This is greatly improved if a variation of friction through the bite is considered.

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DLC films with different thicknesses (from 100 nm to 1.9 μm) were deposited using sputtering of graphite target in pure argon atmosphere without substrate heating. Film microstructures (sp2/sp3 ratio) and mechanical properties (modulus, hardness, stress) were characterized as a function of film thickness. A thin layer of aluminum about 60 nm was deposited on the DLC film surface. Laser micromachining of Al/DLC layer was performed to form microcantilever structures, which were released using a reactive ion etching system with SF6 plasma. Due to the intrinsic stress in DLC films and bimorph Al/DLC structure, the microcantilevers bent up with different curvatures. For DLC film of 100 nm thick, the cantilever even formed microtubes. The relationship between the bimorph beam bending and DLC film properties (such as stress, modulus, etc.) were discussed in details. © 2005 Elsevier B.V. All rights reserved.

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This work explored the use of industrial drop-on-demand inkjet printing for masking steel surfaces on engineering components, followed by chemical etching, to produce patterned surfaces. A solvent-based ink was printed on to mild steel samples and the influences of substrate topography and substrate temperature were investigated. Contact angle measurements were used to assess wettability. Regular patterns of circular spots (∼60 /on diameter) and more complex mask patterns were printed. Variation of the substrate temperature had negligible effect on the final size of the printed drops or on the resolution achieved. Colored optical interference fringes were observed on the dried ink deposits and correlated with film thickness measurements by whitelight interferometry.

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A friction test rig has been developed to carry out repeated sliding friction tests for premium tubular connections. The test rig enables accurate measurement of friction in various contact regimes which are relevant to the threaded connections between tubular components. Higher load tests can simulate the contact in metal-to-metal seals under very high contact pressures by using perpendicular pin-on-pin tests. The contact in the thread loading flank under intermediate pressures can be simulated by using larger radius coupon-on-coupon tests. The measured coefficient of friction is well correlated with a lubrication parameter combining lubricant film thickness and initial surface roughness. © 2012 Elsevier Ltd. All rights reserved.

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The tensile response of single crystal films passivated on two sides is analysed using climb enabled discrete dislocation plasticity. Plastic deformation is modelled through the motion of edge dislocations in an elastic solid with a lattice resistance to dislocation motion, dislocation nucleation, dislocation interaction with obstacles and dislocation annihilation incorporated through a set of constitutive rules. The dislocation motion in the films is by glide-only or by climb-assisted glide whereas in the surface passivation layers dislocation motion occurs by glide-only and penalized by a friction stress. For realistic values of the friction stress, the size dependence of the flow strength of the oxidised films was mainly a geometrical effect resulting from the fact that the ratio of the oxide layer thickness to film thickness increases with decreasing film thickness. However, if the passivation layer was modelled as impenetrable, i.e. an infinite friction stress, the plastic hardening rate of the films increases with decreasing film thickness even for geometrically self-similar specimens. This size dependence is an intrinsic material size effect that occurs because the dislocation pile-up lengths become on the order of the film thickness. Counter-intuitively, the films have a higher flow strength when dislocation motion is driven by climb-assisted glide compared to the case when dislocation motion is glide-only. This occurs because dislocation climb breaks up the dislocation pile-ups that aid dislocations to penetrate the passivation layers. The results also show that the Bauschinger effect in passivated thin films is stronger when dislocation motion is climb-assisted compared to films wherein dislocation motion is by glide-only. © 2012 Elsevier Ltd.

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Carbon coatings of thickness down to 2 nanometers are needed to increase the storage density in magnetic hard disks and reach the 100 Gbit/in2 target. Methods to measure the properties of these ultrathin hard films still have to be developed. We show that combining Surface Brillouin Scattering (SBS) andX-ray reflectivity measurements the elastic constants of such films are accessible. Tetrahedral amorphous carbofilms of thickness down to about 2 nm were deposited on Si by an S bend filtered cathodic vacuum arc, achieving a continuous coverage on large areas free of macroparticles. Film thickness and mass density are measured by X-ray reflectivity: densities above 3 g/cm3 are found, indicating a significant sp3 content. The dispersion relations of surface acoustic waves are measured by SBS. We show that for thicknesses above ∼4 nm these waves can be described by a continuum elastic model based on a single homogeneous equivalent film. The elastic constants can then be obtained by fitting the dispersion relations, computed for given film properties, to the measured dispersion relations. For thicknesses of 3 nm or less qualitative differences among films are well measurable, but quantitative results are less reliable. We have thus shown that we can grow and characterise nanometer size tetrahedral amorphous carbon film, which maintain their high density and peculiar mechanical properties down to around 4 nm thickness, satisfying the requirements set for the hard disk coating material.

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Tantalum-oxide thin films are shown to catalyse single- and multi-walled carbon nanotube growth by chemical vapour deposition. A low film thickness, the nature of the support material (best results with SiO2) and an atmospheric process gas pressure are of key importance for successful nanotube nucleation. Strong material interactions, such as silicide formation, inhibit nanotube growth. In situ X-ray photoelectron spectroscopy indicates that no catalyst reduction to Ta-metal or Ta-carbide occurs during our nanotube growth conditions and that the catalytically active phase is the Ta-oxide phase. Such a reduction-free oxide catalyst can be technologically advantageous. © 2013 The Royal Society of Chemistry.