Offner展宽器曲面镜误差对输出脉冲对比度的影响

在ffner展宽器的设计研究中,对曲面镜曲率半径的误差研究非常重要,它直接影响输出脉冲的质量。因此有必要分析ffner展宽器中曲面镜曲率半径的误差对输出脉冲对比度的影响。参考ffner展宽器的光线追迹模型,建立了ffner展宽器中曲面镜曲率半径存在误差时的光线追迹模型;根据建立的模型,详细分析了曲面镜曲率半径的误差对输出脉冲质量的影响;发现在目前曲面镜曲率半径的加工误差在0.2%~0.5%的情况下,完全可以满足神光II拍瓦激光装置中对展宽器的要求;同时发现如果曲面镜曲率半径存在误差时,应该尽量使两曲面镜之间的距离保持为凹面反射镜曲率半径的一半,而不是使两曲面镜保持同心。

Generation of 1.5-12 ns width-tunable 532 nm pulses by adopting laser-induced plasma shutter technique

The pulse-shaping technique has found widespread applications in nonlinear optics and material processing. Experimental research on laser-induced plasma shutter to control the 532 nm pulse width is conducted. The impacts of the total pulse output energy on pulse compression are investigated, and a useful conclusion can be drawn that there exists an optimal value of pulse energy at which the shortest output pulse of 3.23 ns can be obtained without a device for delay-time. Once the device for delay-time is employed to change the optical differences between two laser paths, the pulse width can be further shortened to 1.51 ns. In short, the 1.5-12 ns width-tunable 532 nm laser pulses have been obtained by adopting the laser-induced plasma shutter technique. (C) 2007 Elsevier GmbH. All rights reserved.

飞秒激光与晶体和玻璃的相互作用

总结了飞秒激光与晶体和玻璃相互作用产生的新现象，如光致折射率改变、光致晶体相变、光还原稀土离子及光致发光等。并分析了它们可能的应用。同时简要的介绍了各种现象产生的机理，展望了飞秒激光与其它物质相互作用可能的研究方向及可能出现的新现象。指出了进行这些研究时可能采用的新方法。

The separation of beta-BBO phase in alpha-BBO crystal by the irradiation of femtosecond laser

We observed and described some phenomena, which were that when a alpha-BBO crystal was irradiated by a focused femtosecond laser beam, the temperature effect happened in a minute area of focus, then the induced beta-BBO phase was separated within the minute area in the alpha-BBO crystal. (C) 2007 Elsevier B.V. All rights reserved.

Nanoscale light-matter interactions in atomic cladding waveguides.

Alkali vapours, such as rubidium, are being used extensively in several important fields of research such as slow and stored light nonlinear optics quantum computation, atomic clocks and magnetometers. Recently, there is a growing effort towards miniaturizing traditional centimetre-size vapour cells. Owing to the significant reduction in device dimensions, light-matter interactions are greatly enhanced, enabling new functionalities due to the low power threshold needed for nonlinear interactions. Here, taking advantage of the mature platform of silicon photonics, we construct an efficient and flexible platform for tailored light-vapour interactions on a chip. Specifically, we demonstrate light-matter interactions in an atomic cladding waveguide, consisting of a silicon nitride nano-waveguide core with a rubidium vapour cladding. We observe the efficient interaction of the electromagnetic guided mode with the rubidium cladding and show that due to the high confinement of the optical mode, the rubidium absorption saturates at powers in the nanowatt regime.

Plasmonic nanofocusing of light in an integrated silicon photonics platform.

The capability to focus electromagnetic energy at the nanoscale plays an important role in nanoscinece and nanotechnology. It allows enhancing light matter interactions at the nanoscale with applications related to nonlinear optics, light emission and light detection. It may also be used for enhancing resolution in microscopy, lithography and optical storage systems. Hereby we propose and experimentally demonstrate the nanoscale focusing of surface plasmons by constructing an integrated plasmonic/photonic on chip nanofocusing device in silicon platform. The device was tested directly by measuring the optical intensity along it using a near-field microscope. We found an order of magnitude enhancement of the intensity at the tip's apex. The spot size is estimated to be 50 nm. The demonstrated device may be used as a building block for "lab on a chip" systems and for enhancing light matter interactions at the apex of the tip.

Third-order optical nonlinearities of lead-free (Na1-xKx)(0.5)Bi0.5TiO3 thin films

(Na1-xKx)(0.5)Bi0.5TiO3 (NKBT) (x = 0.1, 0.2, and 0.3) thin films with good surface morphology and rhombohedral perovskite structure were fabricated on quartz substrates by a sol-gel process. The fundamental optical constants (the band gaps, linear refractive indices and absorption coefficients) of the films were obtained through optical transmittance measurements. The nonlinear optical properties were investigated by Z-scan technique performed at 532 nm with a picosecond laser. A two-photon absorption effect closely related with potassium-doping content was found in thin films, and the nonlinear refractive index n(2) increases evidently with potassium-doping. The real part of the third-order nonlinear susceptibility chi((3)) is much larger than its imaginary part, indicating that the third-order optical nonlinear response of the NKBT films is dominated by the optical nonlinear refractive behavior. These results show that NKBT thin films have potential applications in nonlinear optics. (C) 2007 Elsevier B.V. All rights reserved.

Grey screening-photovoltaic soliton-induced waveguides

This paper shows that waveguides induced by grey screening-photovoltaic solitons are always single mode for all intensity ratios, which are the ratio between the peak intensity of the soliton and the dark irradiance. It finds that the confined energy near the centre of the grey soliton and the propagation constant of the guided mode increase monotonically with increasing intensity ratio. On the other hand, when the soliton greyness increases, the confined energy near the centre of the grey soliton and the propagation constant of the guided mode reduce monotonically. When the bulk photovoltaic effect is neglected for short circuits, these waveguides become waveguides induced by grey screening solitons. When the external bias field is absent, these waveguides become waveguides induced by grey photovoltaic solitons.

Intersubband optical absorption in a step asymmetric semiconductor quantum well driven by a terahertz field

The nonlinear optical absorption in a three-subband step asymmetric semiconductor quantum well driven by a strong terahertz (THz) field is investigated theoretically by employing the intersubband semiconductor-Bloch equations. We show that the optical absorption spectrum strongly depends on the intensity, frequency, and phase of the pump THz wave. The strong THz field induces THz sidebands and Autler-Townes splitting in the probe absorption spectrum. Varying the pump frequency can bring not only the new absorption peaks but also the changing of the energy separation of the two higher-energy levels. The dependence of the absorption spectrum on the phase of the pump THz wave is also very remarkable.

Generation of 207-femtosecond pulses from a ytterbium figure-of-eight fibre laser

We report the generation of 207-fs pulses with 1.2mW average power at 1036 nm directly from a passively mode-locked Yb-doped fibre laser with a nonlinear optical loop mirror for mode-locking and pairs of diffraction gratings for intracavity dispersion compensation. These results imply a 4-fold reduction in pulse duration over previously reported figure-of-eight cavity passively mode-locked Yb-doped fibre lasers. Stable pulse trains are produced at the fundamental repetition rate of the resonator, 24.0MHz. On the other hand, this laser offers a cleaner spectrum and greater stability and is completely self-starting.

Phase mismatching analysis of third harmonic generation in BBO crystal

对BBO晶体三次谐波转换过程中相位失配情况进行了研究。当BBO 晶体按Ⅰ类相位匹配(oo→e)进行三次谐波转换时，如果保持基频光正入射，当倍频光从两个相互独立的平面方向(晶体主截面及主截面的垂面)偏离预期方向时，相位失配将出现变化，并且在两个面内的偏离量对转换效率的影响程度不同。我们分别数值模拟了两个方向上的相位失配情况，并给出了谐波转换效率同入射角度偏差的关系。数值模拟结果表明，在主截面内的相位匹配容限角为0.2°，在主截面垂面内的相位匹配容限角为4.5°。同时，开展了实验研究，实验结果与数值模拟结果高度吻合，表明在主截面内的角度偏差对转换效率的影响更大。

Synthesis, characterization, photoluminescent and electroluminescent properties of new conjugated 2,2 '-(arylenedivinylene)bis-8-substituted quinolines

A series of new PPV oligomers containing 8-substituted quinoline, 2,2'-(arylenedivinylene) bis-8-quinoline derivatives, were designed and synthesized via a Knoevenagel condensation reaction of quinaldine, 8-hydroxy-or 8-methoxy-quinaldine with aromatic dialdehydes. These PPV oligomers were characterized by H-1 and C-13-NMR, X-ray diffraction, elemental analysis, UV-visible and fluorescence spectroscopies. The X-ray diffraction investigation showed that there are intermolecular pi...pi interactions in the solid state in 1 and 3. The optical and photoluminescent properties study demonstrated that the emission color of the resulting materials varies from blue to yellow and is dependent on the substituents (pi-donor and pi-acceptor groups) on both sides of the conjugated molecules and the aromatic core in the middle of the conjugated backbones. The electroluminescent devices using compounds 1-4 as the emitters and electron-transporting layers were fabricated with the structure ITO/NPB/emitter/LiF/Al. The best device performance with the maximum brightness of 5530 cd m(-2) and the luminous efficiency of 2.4 cd A(-1) is achieved by using compound 4, with intramolecular charge transfer character, as the emitter; these values represent a more than 5-fold improvement in brightness and efficiency compared to compound 3 without methoxy groups on the phenyl rings.

New PPV oligomers containing 8-substituted quinoline for light-emitting diodes

Two new poly(phenylenevinylene) (PPV) oligomers, 2,2'-(1,4-phenylenedivinylene)bis-8-acetoxy quinolines were synthesized via a Knoevenagel condensation reaction. The single-crystal X-ray diffraction study shows that there are intermolecular pi...pi interactions in the solid state of 2,2'(1,4-phenylenedivinylene)bis-8-acetoxyquinoline. Electroluminescent properties using these compounds as emitters have been investigated.

Use of semiconductor optical amplifiers in signal processing applications

We describe a 42.6 Gbit/s all-optical pattern recognition system which uses semiconductor optical amplifiers (SOAs). A circuit with three SOA-based logic gates is used to identify the presence of specific port numbers in an optical packet header.