880 resultados para Fault proness
Resumo:
This paper introduces the notion of M-step robust fault tolerance for discrete-time systems where finite-time completion of a control manoeuvre is desired. It considers a scenario with two distinct objectives; a primary and secondary target are specified as sets to be reached in finite-time, whilst satisfying operating constraints on the states and inputs. The primary target is switched to the secondary target when a fault affects the system. As it is unknown when or if the fault will occur, the trajectory to the primary target is constrained to ensure reachability of the secondary target within M steps. A variable-horizon linear MPC formulation is developed to illustrate the concept. The formulation is then extended to provide robustness to bounded disturbances by use of tightened constraints. Simulations demonstrate the efficacy of the controller formulation on a double-integrator model. © 2011 IFAC.
Resumo:
Various MgB2 wires with different sheath materials provided by Hyper Tech Research Inc., have been tested in the superconducting fault current limiter (SFCL) desktop tester at 24-26K in a self-field. Samples 1 and 2 are similarly fabricated monofilamentary MgB2 wires with a sheath of CuNi, except that sample 2 is doped with SiC and Mg addition. Sample 3 is a CuNi sheathed multifilamentary wire with Cu stabilization and Mg addition. All the samples with Nb barriers have the same diameter of 0.83mm and superconducting fractions ranging from 15% to 27% of the total cross section. They were heat-treated at temperatures of 700 °C for a hold time of 20-40min. Current limiting properties of MgB2 wires subjected to pulse overcurrents have been experimentally investigated in an AC environment in the self-field at 50Hz. The quench currents extracted from the pulse measurements were in a range of 200-328A for different samples, corresponding to an average engineering critical current density (Je) of around 4.8 × 10 4Acm-2 at 25K in the self-field, based on the 1νVcm-1 criterion. This work is intended to compare the quench behaviour in the Nb-barrier monofilamentary and multifilamentary MgB2 wires with CuNi and Cu/CuNi sheaths. The experimental results can be applied to the design of fault current limiter applications based on MgB2 wires. © IOP Publishing Ltd.
Resumo:
A superconducting fault current limiter (SFCL) in series with a downstream circuit breaker could provide a viable solution to controlling fault current levels in electrical distribution networks. In order to integrate the SFCL into power grids, we need a way to conveniently predict the performance of the SFCL in a given scenario. In this paper, short circuit analysis based on the electromagnetic transient program was used to investigate the operational behavior of the SFCL installed in an electrical distribution grid. System studies show that the SFCL can not only limit the fault current to an acceptable value, but also mitigate the voltage sag. The transient recovery voltage (TRV) could be remarkably damped and improved by the presence of the SFCL after the circuit breaker is opened to clear the fault. © 2007 British Crown Copyright.
Resumo:
Cheap to make and easy to shape, Magnesium Diboride (MgB2) throws the field of applied superconductivity wide open. Great efforts have been made to develop a super-conducting fault current limiter (SFCL) using MgB 2. With a superconducting transition temperature of 39 K, MgB 2 can be conveniently cooled with commercial cryocoolers. A cryogenic desktop test system, an ac pulse generation system and a real time data acquisition program in LabView/DAQmx were developed to investigate the quench behavior of MgB2 wires under pulse overcurrents at 25 K in self-field conditions. The experimental results on the current limitation behavior show the possibilities for using MgB2 for future SFCL applications. © 2007 IEEE.
Resumo:
The brushless doubly fed induction generator (BDFIG) shows commercial promise for wind power generation due to its lower cost and higher reliability when compared with the conventional DFIG. In the most recent grid codes, wind generators are required to be able to ride through a low-voltage fault and meet the reactive current demand from the grid. A low-voltage ride-through (LVRT) capability is therefore important for wind generators which are integrated into the grid. In this paper, the authors propose a control strategy enabling the BDFIG to successfully ride through a symmetrical voltage dip. The control strategy has been implemented on a 250-kW BDFIG, and the experimental results indicate that the LVRT is possible without a crowbar. © 1982-2012 IEEE.
Resumo:
Essential ingredients for fault-tolerant control are the ability to represent system behaviour following the occurrence of a fault, and the ability to exploit this representation for deciding control actions. Gaussian processes seem to be very promising candidates for the first of these, and model predictive control has a proven capability for the second. We therefore propose to use the two together to obtain fault-tolerant control functionality. Our proposal is illustrated by several reasonably realistic examples drawn from flight control. © 2013 IEEE.
Resumo:
A time-varying controllable fault-tolerant field associative memory model and the realization algorithms are proposed. On the one hand, this model simulates the time-dependent changeability character of the fault-tolerant field of human brain's associative memory. On the other hand, fault-tolerant fields of the memory samples of the model can be controlled, and we can design proper fault-tolerant fields for memory samples at different time according to the essentiality of memory samples. Moreover, the model has realized the nonlinear association of infinite value pattern from n dimension space to m dimension space. And the fault-tolerant fields of the memory samples are full of the whole real space R-n. The simulation shows that the model has the above characters and the speed of associative memory about the model is faster.
Resumo:
The electronic structure of a bounded intrinsic stacking fault in silicon is calculated. The method used is an LCAO-scheme (Linear Combinations of Atomic Orbitals) taking ten atomic orbitals of s-, p-, and d-type into account. The levels in the band gap are extracted using Lanczos' algorithm and a continued fraction representation of the local density of states. We find occupied states located up to 0.3 eV above the valence band maximum (E(v)). This significantly differs from the result obtained for the ideal infinite fault for which the interface state is located at E(v)+ 0.1 eV.