Scaling of pressure spectrum in turbulent boundary layers

Scaling of pressure spectrum in zero-pressure-gradient turbulent boundary layers is discussed. Spatial DNS data of boundary layer at one time instant (Re-theta = 4500) are used for the analysis. It is observed that in the outer regions the pressure spectra tends towards the -7/3 law predicted by Kolmogorov's theory of small-scale turbulence. The slope in the pressure spectra varies from -1 close to the wall to a value close to -7/3 in the outer region. The streamwise velocity spectra also show a -5/3 trend in the outer region of the flow. The exercise carried out to study the amplitude modulation effect of the large scales on the smaller ones in the near-wall region reveals a strong modulation effect for the streamwise velocity, but not for the pressure fluctuations. The skewness of the pressure follows the same trend as the amplitude modulation coefficient, as is the case for the velocity. In the inner region, pressure spectra were seen to collapse better when normalized with the local Reynolds stress (-(u'v') over bar) than when scaled with the local turbulent kinetic energy (q(2) = (u'(2)) over bar + (v'(2)) over bar + (w'(2)) over bar)

Spontaneous Breaking of Time-Reversal Symmetry in Strongly Interacting Two-Dimensional Electron Layers in Silicon and Germanium

We report experimental evidence of a remarkable spontaneous time-reversal symmetry breaking in two-dimensional electron systems formed by atomically confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing doping in the Si: P and Ge: P delta layers, suggesting an effect driven by Coulomb interactions. In-plane magnetotransport measurements indicate the presence of intrinsic local spin fluctuations at low doping, providing a microscopic mechanism for spontaneous lifting of the time-reversal symmetry. Our experiments suggest the emergence of a new many-body quantum state when two-dimensional electrons are confined to narrow half-filled impurity bands.

Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of Delta E-t approximate to 0.3 eV and with a density of state distribution as D-t(Et-j) = D-t0 exp(-Delta E-t/kT) with D-t0 = 5.02 x 10(11) cm(-2) eV(-1). Such a model is useful for developing simulation tools for circuit design. (C) 2014 AIP Publishing LLC.

Low-density three-dimensional foam using self-reinforced hybrid two-dimensional atomic layers

Low-density nanostructured foams are often limited in applications due to their low mechanical and thermal stabilities. Here we report an approach of building the structural units of three-dimensional (3D) foams using hybrid two-dimensional (2D) atomic layers made of stacked graphene oxide layers reinforced with conformal hexagonal boron nitride (h-BN) platelets. The ultra-low density (1/400 times density of graphite) 3D porous structures are scalably synthesized using solution processing method. A layered 3D foam structure forms due to presence of h-BN and significant improvements in the mechanical properties are observed for the hybrid foam structures, over a range of temperatures, compared with pristine graphene oxide or reduced graphene oxide foams. It is found that domains of h-BN layers on the graphene oxide framework help to reinforce the 2D structural units, providing the observed improvement in mechanical integrity of the 3D foam structure.

Effect of shrinkage induced flow on binary alloy dendrite growth: An equivalent undercooling model

This paper presents a theoretical model for studying the effects of shrinkage induced flow on the growth rate of binary alloy dendrites. An equivalent undercooling of the melt is defined in terms of ratio of the phase densities to represent the change in dendrite growth rate due to variation in solutal and thermal transport resulting from shrinkage induced flow. Subsequently, results for dendrite growth rate predicted by the equivalent undercooling model is compared with the corresponding predictions obtained using an enthalpy based numerical method for dendrite growth with shrinkage. The agreement is found to be good. Published by Elsevier Ltd.

Self-Assembled, Aligned ZnO Nanorod Buffer Layers for High-Current-Density, Inverted Organic Photovoltaics

Two different soft-chemical, self-assembly-based solution approaches are employed to grow zinc oxide (ZnO) nanorods with controlled texture. The methods used involve seeding and growth on a substrate. Nanorods with various aspect ratios (1-5) and diameters (15-65 nm) are grown. Obtaining highly oriented rods is determined by the way the substrate is mounted within the chemical bath. Furthermore, a preheat and centrifugation step is essential for the optimization of the growth solution. In the best samples, we obtain ZnO nanorods that are almost entirely oriented in the (002) direction; this is desirable since electron mobility of ZnO is highest along this crystallographic axis. When used as the buffer layer of inverted organic photovoltaics (I-OPVs), these one-dimensional (1D) nanostructures offer: (a) direct paths for charge transport and (b) high interfacial area for electron collection. The morphological, structural, and optical properties of ZnO nanorods are studied using scanning electron microscopy, X-ray diffraction, and ultraviolet-visible light (UV-vis) absorption spectroscopy. Furthermore, the surface chemical features of ZnO films are studied using X-ray photoelectron spectroscopy and contact angle measurements. Using as-grown ZnO, inverted OPVs are fabricated and characterized. For improving device performance, the ZnO nanorods are subjected to UV-ozone irradiation. UV-ozone treated ZnO nanorods show: (i) improvement in optical transmission, (ii) increased wetting of active organic components, and (iii) increased concentration of Zn-O surface bonds. These observations correlate well with improved device performance. The devices fabricated using these optimized buffer layers have an efficiency of similar to 3.2% and a fill factor of 0.50; this is comparable to the best I-OPVs reported that use a P3HT-PCBM active layer.

Effect of strain on electronic and thermoelectric properties of few layers to bulk MoS2

The sensitive dependence of the electronic and thermoelectric properties of MoS2 on applied strain opens up a variety of applications in the emerging area of straintronics. Using first-principles-based density functional theory calculations, we show that the band gap of a few layers of MoS2 can be tuned by applying normal compressive (NC) strain, biaxial compressive (BC) strain, and biaxial tensile (BT) strain. A reversible semiconductor-to-metal transition (S-M transition) is observed under all three types of strain. In the case of NC strain, the threshold strain at which the S-M transition occurs increases when the number of layers increase and becomes maximum for the bulk. On the other hand, the threshold strain for the S-M transition in both BC and BT strains decreases when the number of layers increase. The difference in the mechanisms for the S-M transition is explained for different types of applied strain. Furthermore, the effect of both strain type and the number of layers on the transport properties are also studied using Botzmann transport theory. We optimize the transport properties as a function of the number of layers and the applied strain. 3L- and 2L-MoS2 emerge as the most efficient thermoelectric materials under NC and BT strain, respectively. The calculated thermopower is large and comparable to some of the best thermoelectric materials. A comparison among the feasibility of these three types of strain is also discussed.

Investigation of the separated region ahead of three-dimensional protuberances on plates and cones in hypersonic flows with laminar boundary layers

Heat transfer rate and pressure measurements were made upstream of surface pro-tuberances on a flat plate and a sharp cone subjected to hypersonic flow in a conventional shock tunnel. Heat flux was measured using platinum thin-film sensors deposited on macor substrate and the pressure measurements were made using fast acting piezoelectric sensors. A distinctive hot spot with highest heat flux was obtained near the foot of the protuberance due to heavy vortex activity in the recirculating region. Schlieren flow visualization was used to capture the shock structures and the separation distance ahead of the protrusions was quantitatively measured for varying protuberance heights. A computational analysis was conducted on the flat plate model using commercial computational fluid dynamics software and the obtained trends of heat flux and pressure were compared with the experimental observation. Experiments were also conducted by physically disturbing the laminar boundary layer to check its effect on the magnitude of the hot spot heat flux. In addition to air, argon was also used as test gas so that the Reynolds number can be varied. (C) 2014 AIP Publishing LLC.

A predictive approach to CVD of crystalline layers of TMDs: the case of MoS2

Layered transition metal dichalcogenides (TMDs), such as MoS2, are candidate materials for next generation 2-D electronic and optoelectronic devices. The ability to grow uniform, crystalline, atomic layers over large areas is the key to developing such technology. We report a chemical vapor deposition (CVD) technique which yields n-layered MoS2 on a variety of substrates. A generic approach suitable to all TMDs, involving thermodynamic modeling to identify the appropriate CVD process window, and quantitative control of the vapor phase supersaturation, is demonstrated. All reactant sources in our method are outside the growth chamber, a significant improvement over vapor-based methods for atomic layers reported to date. The as-deposited layers are p-type, due to Mo deficiency, with field effect and Hall hole mobilities of up to 2.4 cm(2) V-1 s(-1) and 44 cm(2) V-1 s(-1) respectively. These are among the best reported yet for CVD MoS2.

Reynolds averaged Navier-Stokes simulations of compressible mixing layers of similar and dissimilar gases: Performance of k- turbulence model

The issue of growth rate reduction of high speed mixing layer with convective Mach number is examined for similar and dissimilar gases using Reynolds averaged Navier-Stokes (RANS) methodology with k- turbulence model. It is observed that the growth rate predicted using RANS simulations closely matches with that predicted using model free simulations. Velocity profiles do not depend on the modelled value of Pr-t and Sc-t; while the temperature and species mass fraction distributions depend heavily on them. Although basic k- turbulence model could not capture the reduced growth rate for the mixing layer formed between similar gases, it predicts very well the reduced growth rate for the mixing layer for the dissimilar gases. It appears that density ratio changes caused by temperature changes for the dissimilar gases have profound effect on the growth rate reduction.

PREDICTION OF TRANSITIONAL AND SEPARATED BOUNDARY LAYERS IN A COMPRESSOR CASCADE

Numerical simulations were performed of experiments from a cascade of stator blades at three low Reynolds numbers representative of flight conditions. Solutions were assessed by comparing blade surface pressures, velocity and turbulence intensity along blade normals at several stations along the suction surface and in the wake. At Re = 210,000 and 380,000 the laminar boundary layer over the suction surface separates and reattaches with significant turbulence fluctuations. A new 3-equation transition model, the k-k(L)-omega model, was used to simulate this flow. Predicted locations of the separation bubble, and profiles of velocity and turbulence fluctuations on blade-normal lines at various stations along the blade were found to be quite close to measurements. Suction surface pressure distributions were not as close at the lower Re. The solution with the standard k-omega SST model showed significant differences in all quantities. At Re = 640,000 transition occurs earlier and it is a turbulent boundary layer that separates near the trailing edge. The solution with the Reynolds stress model was found to be quite close to the experiment in the separated region also, unlike the k-omega SST solution. Three-dimensional computations were performed at Re = 380,000 and 640,000. In both cases there were no significant differences between the midspan solution from 3D computations and the 2D solutions. However, the 3D solutions exhibited flow features observed in the experiments the nearly 2D structure of the flow over most of the span at 380,000 and the spanwise growth of corner vortices from the endwall at 640,000.

Spotting 2D atomic layers on aluminum nitride thin films

Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2 `' Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

Sulfurization of sputtered Ag-In precursors for AgInS2 solar cell absorber layers

Silver indium sulfide (AgInS2) thin films are deposited by sequential sputtering of metallic precursor Ag/In] followed by sulfurization. Effect of substrate temperature (Tsub) during sulfurization process on the film growth is studied by varying the substrate temperature from 350 to 500 degrees C. Films prepared above 350 degrees C showed a mixture of orthorhombic and tetragonal phases of AgInS2 with tetragonal phase being dominant. Better crystalline, nearly stoichiometric and p-type films are obtained at a substrate temperature of 500 degrees C. The characteristic A(1) mode of AgInS2 chalcopyrite structure is observed in the Raman spectra at 274 cm(-1) for the films prepared above 350 degrees C. The grain size of the film increases from 489 to 895 nm with the increase in substrate temperature. The binding energies of the constituent elements are determined using XPS. The band gap of AgInS2 films is in the range of 1.64-1.92 eV and the absorption coefficient is found to be >10(4) cm(-1). Preliminary studies on the AgInS2/ZnS solar cell showed an efficiency of 0.3%. (C) 2015 Elsevier B.V. All rights reserved.

Instabilities in unsteady boundary layers with reverse flow

Instabilities arising in unsteady boundary layers with reverse flow have been investigated experimentally. Experiments are conducted in a piston driven unsteady water tunnel with a shallow angle diffuser placed in the test section. The ratio of temporal (Pi(t)) to spatial (Pi(x)) component of the pressure gradient can be varied by a controlled motion of the piston. In all the experiments, the piston velocity variation with time is trapezoidal consisting of three phases: constant acceleration from rest, constant velocity and constant deceleration to rest. The adverse pressure gradient (and reverse flow) are due to a combination of spatial deceleration of the free stream in the diffuser and temporal deceleration of the free stream caused by the piston deceleration. The instability is usually initiated with the formation of one or more vortices. The onset of reverse flow in the boundary layer, location and time of formation of the first vortex and the subsequent flow evolution are studied for various values of the ratio Pi(x) (Pi(x) + Pi(t)) for the bottom and the top walls. Instability is due to the inflectional velocity profiles of the unsteady boundary layer. The instability is localized and spreads to the other regions at later times. At higher Reynolds numbers growth rate of instability is higher and localized transition to turbulence is observed. Scalings have been proposed for initial vortex formation time and wavelength of the instability vortices. Initial vortex formation time scales with convective time, delta/Delta U, where S is the boundary layer thickness and Delta U is the difference of maximum and minimum velocities in the boundary layer. Non-dimensional vortex formation time based on convective time scale for the bottom and the top walls are found to be 23 and 30 respectively. Wavelength of instability vortices scales with the time averaged boundary layer thickness. (C) 2015 Elsevier Masson SAS. All rights reserved.

Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector

A heterostructure of graphene and zinc oxide (ZnO) nanowires (NWs) is fabricated by sandwiching an array of ZnO NWs between two graphene layers for an ultraviolet (UV) photodetector. This unique structure allows NWs to be in direct contact with the graphene layers, minimizing the effect of the substrate or metal electrodes. In this device, graphene layers act as highly conducting electrodes with a high mobility of the generated charge carriers. An excellent sensitivity is demonstrated towards UV illumination, with a reversible photoresponse even for a short period of UV illumination. Response and recovery times of a few milliseconds demonstrated a much faster photoresponse than most of the conventional ZnO nanostructure-based photodetectors. It is shown that the generation of a built-in electric field between the interface of graphene and ZnO NWs effectively contributes to the separation of photogenerated electron-hole pairs for photocurrent generation without applying any external bias. Upon application of external bias voltage, the electric field further increases the drift velocity of photogenerated electrons by reducing the charge recombination rates, and results in an enhancement of the photocurrent. Therefore, the graphene-based heterostructure (G/ZnO NW/G) opens avenues to constructing a novel heterostructure with a combination of two functionally dissimilar materials.