Organizational, direct support maintenance, repair parts and special tools list : detecting set, mine, aural indication, 10V DC operating power, portable, transistorized, w/case AN/PSS-11 (Polan models P153 and P158) FSN 6665-966-9071, (Polan model P190) FSN 6665-181-0432, (Oregon Technical Products model MD-M) ...

"23 February 1974."

Organizational, direct and general support, and depot maintenance repair parts and special tools lists : motor generator, power supply generator, 60 kw, 120/208, 240/416 volt, 3-phase, 4 wire service, 400 hertz, DC component output, 28 volt, 10 amp, motor input AC, 416 volt, 3-phase, 60 hertz, portable skid mounted (General Dynamics Corp. model 14105008), FSN 6125-917-2244.

"November 1970."

Organizational, direct support , and general support maintenance repair parts and special tools list (including depot maintenance repair parts and special tools) for power supply/DC dual, (0-40VDC/0-1.5A), (NSN 6130-00-065-6811).

Includes index.

Operator's, organizational, direct support and general support maintenance manual for power supply, dual DC, (H-P model 6255A), (NSN 6130-00-065-6811).

Includes index.

Central Valley Project Improvement Act : hearings before the Subcommittee on Water and Power of the Committee on Energy and Natural Resources, United States Senate, One Hundred Second Congress, first session, on S. 484 ... Los Angeles, CA, March 18, 1991; Washington, DC, May 6, 1991; Sacramento, CA, May 30, 1991.

"San Francisco, CA, September 4, 1991"--Pt. 2.

Novel communication method between power converters for DC micro-grid applications

Communication between power converters is vital for high performance DC micro-grids controls. However, for residential DC micro-grid applications, using external communication link would increase the system cost, and reduce the system flexibility and reliability. This paper presents a novel method to enable the conventional DC/DC converters to transmit data via the common DC Bus. With this technology, cost-effective low bandwidth communication links between power converters can be established within a DC micro-grid, and advanced distributed control algorithms can be developed. A reliable communication with 2 kbps transmission rate has been implemented between the Boost converters through the common input DC bus.

Three-port DC-DC converter for stand-alone photovoltaic systems

System efficiency and cost effectiveness are of critical importance for photovoltaic (PV) systems. This paper addresses the two issues by developing a novel three-port dc-dc converter for stand-alone PV systems, based on an improved Flyback-Forward topology. It provides a compact single-unit solution with a combined feature of optimized maximum power point tracking (MPPT), high step-up ratio, galvanic isolation, and multiple operating modes for domestic and aerospace applications. A theoretical analysis is conducted to analyze the operating modes followed by simulation and experimental work. This paper is focused on a comprehensive modulation strategy utilizing both PWM and phase-shifted control that satisfies the requirement of PV power systems to achieve MPPT and output voltage regulation. A 250-W converter was designed and prototyped to provide experimental verification in term of system integration and high conversion efficiency.

Subsea DC Collection Grid with High Power Security for Offshore Renewables

This work was supported by the Engineering and Physical Sciences Research Council [grant number EP/K006428/1]; and the European Regional Development Fund [grant number LUPS/ERDF/2010/4/1/0164].

Analysis of the E-J Curve of HTS Tapes Under DC and AC Magnetic Fields at 77 K

The evaluation of the electrical characteristics of technical HTS tapes are of the key importance in determining the design and operational features of superconducting power apparatuses as well as to understand the external factors which affect the superconducting performance. In this work we report the systematic measurements of the electric field versus current density, E-J relation of short samples for three commercial HTS tapes (BSCCO-2223 tapes, with and without steel reinforcement, and YBCO-coated conductor) at 77 K. In order to get sensitive and noiseless voltage signals the measurements were carried out with DC transport current and subjecting the broad surface tape to DC (0-300 mT) and AC (0-62 mT, 60 Hz) magnetic fields. The voltage is measured by a sensitive nanovoltmeter and the applied magnetic field is monitored by a Hall sensor placed on the tape broad surface. The comparison between the results obtained from the three tapes was done by fitting a power-law equation for currents in the vicinity of the critical current. For the current regime below the critical one a linear correlation of the electric field against the current density is observed. The BSCCO samples presented the same behavior, i.e., a decreasing of n-index with the increasing DC and AC magnetic field strength. Under AC field the decreasing slope of n-index is steeper as compared to DC field. The n-index curve for the YBCO tape showed similar behavior for AC field, however under DC field in the 0-390 mT range exhibited a slight decreasing of the n-index.

Comparison between DC(+) and Square Wave AC SAW Current Outputs to Weld AISI 304 for Low-Temperature Applications

Welded equipment for cryogenic applications is utilized in chemical, petrochemical, and metallurgical industries. One material suitable for cryogenic application is austenitic stainless steel, which usually doesn`t present ductile/brittle transition temperature, except in the weld metal, where the presence of ferrite and micro inclusions can promote a brittle failure, either by ferrite cleavage or dimple nucleation and growth, respectively. A 25-mm- (1-in.-) thick AISI 304 stainless steel base metal was welded with the SAW process using a 308L solid wire and two kinds of fluxes and constant voltage power sources with two types of electrical outputs: direct current electrode positive and balanced square wave alternating current. The welded joints were analyzed by chemical composition, microstructure characterization, room temperature mechanical properties, and CVN impact test at -100 degrees C (-73 degrees F). Results showed that an increase of chromium and nickel content was observed in all weld beads compared to base metal. The chromium and nickel equivalents ratio for the weld beads were always higher for welding with square wave AC for the two types of fluxes than for direct current. The modification in the Cr(eq)/Ni(eq) ratio changes the delta ferrite morphology and, consequently, modifies the weld bead toughness at lower temperatures. The oxygen content can also affect the toughness in the weld bead. The highest absorbed energy in a CVN impact test was obtained for the welding condition with square wave AC electrical output and neutral flux, followed by DC(+) electrical output and neutral flux, and square wave AC electrical output and alloyed flux.

Network structures of Bis-GMA/TEGDMA resins differ in DC, shrinkage-strain, hardness and optical properties as a function of reducing agent

Objectives. To evaluate the influence of different tertiary amines on degree of conversion (DC), shrinkage-strain, shrinkage-strain rate, Knoop microhardness, and color and transmittance stabilities of experimental resins containing BisGMA/TEGDMA (3: 1 wt), 0.25wt% camphorquinone, 1wt% amine (DMAEMA, CEMA, DMPT, DEPT or DABE). Different light-curing protocols were also evaluated. Methods. DC was evaluated with FTIR-ATR and shrinkage-strain with the bonded-disk method. Shrinkage-strain-rate data were obtained from numerical differentiation of shrinkage-strain data with respect to time. Color stability and transmittance were evaluated after different periods of artificial aging, according to ISO 7491: 2000. Results were evaluated with ANOVA, Tukey, and Dunnett`s T3 tests (alpha = 0.05). Results. Studied properties were influenced by amines. DC and shrinkage-strain were maximum at the sequence: CQ < DEPT < DMPT <= CEMA approximate to DABE < DMAEMA. Both DC and shrinkage were also influenced by the curing protocol, with positive correlations between DC and shrinkage-strain and DC and shrinkage-strain rate. Materials generally decreased in L* and increased in b*. The strong exception was the resin containing DMAEMA that did not show dark and yellow shifts. Color varied in the sequence: DMAEMA < DEPT < DMPT < CEMA < DABE. Transmittance varied in the sequence: DEPT approximate to DABE < DABE approximate to DMPT approximate to CEMA < DMPT approximate to CEMA approximate to DMAEMA, being more evident at the wavelength of 400 nm. No correlations between DC and optical properties were observed. Significance. The resin containing DMAEMA showed higher DC, shrinkage-strain, shrinkage-strain rate, and microhardness, in addition to better optical properties. (C) 2011 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Influence of curing protocol on selected properties of light-curing polymers: Degree of conversion, volume contraction, elastic modulus, and glass transition temperature

Objectives. The purpose of this study was to investigate the effect of light-curing protocol on degree of conversion (DC), volume contraction (C), elastic modulus (E), and glass transition temperature (T(g)) as measured on a model polymer. It was a further aim to correlate the measured values with each other. Methods. Different light-curing protocols were used in order to investigate the influence of energy density (ED), power density (PD), and mode of cure on the properties. The modes of cure were continuous, pulse-delay, and stepped irradiation. DC was measured by Raman micro-spectroscopy. C was determined by pycnometry and a density column. E was measured by a dynamic mechanical analyzer (DMA), and T(g) was measured by differential scanning calorimetry (DSC). Data were submitted to two-and three-way ANOVA, and linear regression analyses. Results. ED, PD, and mode of cure influenced DC, C, E, and T(g) of the polymer. A significant positive correlation was found between ED and DC (r = 0.58), ED and E (r = 0.51), and ED and T(g) (r = 0.44). Taken together, ED and PD were significantly related to DC and E. The regression coefficient was positive for ED and negative for PD. Significant positive correlations were detected between DC and C (r = 0.54), DC and E (r = 0.61), and DC and T(g) (r = 0.53). Comparisons between continuous and pulse-delay modes of cure showed significant influence of mode of cure: pulse-delay curing resulted in decreased DC, decreased C, and decreased T(g). Influence of mode of cure, when comparing continuous and step modes of cure, was more ambiguous. A complex relationship exists between curing protocol, microstructure of the resin and the investigated properties. The overall performance of a composite is thus indirectly affected by the curing protocol adopted, and the desired reduction of C may be in fact a consequence of the decrease in DC. (C) 2009 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

A DC Voltage-Multiplier Circuit Working as a High-Voltage Pulse Generator

The intensive use of semiconductor devices enabled the development of a repetitive high-voltage pulse-generator topology from the dc voltage-multiplier (VM) concept. The proposed circuit is based on an odd VM-type circuit, where a number of dc capacitors share a common connection with different voltage ratings in each one, and the output voltage comes from a single capacitor. Standard VM rectifier and coupling diodes are used for charging the energy-storing capacitors, from an ac power supply, and two additional on/off semiconductors in each stage, to switch from the typical charging VM mode to a pulse mode with the dc energy-storing capacitors connected in series with the load. Results from a 2-kV experimental prototype with three stages, delivering a 10-mu s pulse with a 5-kHz repetition rate into a resistive load, are discussed. Additionally, the proposed circuit is compared against the solid-state Marx generator topology for the same peak input and output voltages.

On the Problem of Balancing the DC Capacitor Voltage Divider in Back-to-Back Multilevel Converters

This paper presents a new generalized solution for DC bus capacitors voltage balancing in back-to-back m level diode-clamped multilevel converters connecting AC networks. The solution is based on the DC bus average power flow and exploits the switching configuration redundancies. The proposed balancing solution is particularized for the back-to-back multilevel structure with m=5 levels. This back-to-back converter is studied working with bidirectional power flow, connecting an induction machine to the power grid.

Limiting Internal Supply Voltage Spikes in DC-DC Converters

Implementing monolithic DC-DC converters for low power portable applications with a standard low voltage CMOS technology leads to lower production costs and higher reliability. Moreover, it allows miniaturization by the integration of two units in the same die: the power management unit that regulates the supply voltage for the second unit, a dedicated signal processor, that performs the functions required. This paper presents original techniques that limit spikes in the internal supply voltage on a monolithic DC-DC converter, extending the use of the same technology for both units. These spikes are mainly caused by fast current variations in the path connecting the external power supply to the internal pads of the converter power block. This path includes two parasitic inductances inbuilt in bond wires and in package pins. Although these parasitic inductances present relative low values when compared with the typical external inductances of DC-DC converters, their effects can not be neglected when switching high currents at high switching frequency. The associated overvoltage frequently causes destruction, reliability problems and/or control malfunction. Different spike reduction techniques are presented and compared. The proposed techniques were used in the design of the gate driver of a DC-DC converter included in a power management unit implemented in a standard 0.35 mu m CMOS technology.