Magnetic arm-switch-based three-phase series-shunt compensated quality AC power supply

This study presents a novel magnetic arm-switch-based integrated magnetic circuit for a three-phase series-shunt compensated uninterruptible power supply (UPS). The magnetic circuit acts as a common interacting field for a number of energy ports, viz., series inverter, shunt inverter, grid and load. The magnetic arm-switching technique ensures equivalent series or shunt connection between the inverters. In normal grid mode (stabiliser mode), the series inverter is used for series voltage correction and the shunt one for current correction. The inverters and the load are effectively connected in parallel when the grid power is not available. These inverters are then used to share the load power. The operation of the inverters in parallel is ensured by the magnetic arm-switching technique. This study also includes modelling of the magnetic circuit. A graphical technique called bond graph is used to model the system. In this model, the magnetic circuit is represented in terms of gyrator-capacitors. Therefore the model is also termed as gyrator-capacitor model. The model is used to extract the dynamic equations that are used to simulate the system using MATLAB/SIMULINK. This study also discusses a synchronously rotating reference frame-based control technique that is used for the control of the series and shunt inverters in different operating modes. Finally, the gyrator-capacitor model is validated by comparing the simulated and experimental results.

Effect of power line filter on MOV clamping voltage

Metal oxide varistors (MOV) are popularly used to protect offline electronic equipment against power line transients. The offline switched mode power supplies (SMPS) use power line filters and MOVs in the front-end. The power line filter is used to reduce the conducted noise emission into the power line and the MOVs connected before this line filter and the MOVs connected before this line filter to clamp line transients to safer levels thereby protecting the SMPS. Because of the presence of 'X' capacitors at the input of line filter the MOV clamping voltage is increased. This paper presents one such case and gives theoretical and experimental results. An approximate method to predetermine the magnitude of such clamping voltages is also presented.

Optical, electrical and structural characterization of ZnO:Al thin films prepared by a low cost sol-gel method

ZnO:Al thin films were prepared on glass and silicon substrates by the sol-gel spin coating method. The x-ray diffraction (XRD) results showed that a polycrystalline phase with a hexagonal structure appeared after annealing at 400 degrees C for 1 h. The transmittance increased from 91 to about 93% from pure ZnO films to ZnO film doped with 1 wt% Al and then decreased for 2 wt% Al. The optical band gap energy increased as the doping concentration was increased from 0.5 wt% to 1 wt% Al. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased and the leakage current increased with an increase of annealing temperature. The dielectric constant was found to be 3.12 measured at 1 MHz. The dissipation value for the film annealed at 300 degrees C was found to be 3.1 at 5 V. (C) 2011 Elsevier Ltd. All rights reserved.

Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films

Alumina (Al2O3) thin films were sputter deposited over well-cleaned glass and Si < 100 > substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 degrees C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al2O3-Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance. AC conductivity and activation energy were determined and the results are discussed. (C) 2011 Elsevier B.V. All rights reserved.

Influence of Sn doping on structural, optical and electrical properties of ZnO thin films prepared by cost effective sol-gel process

Tin (Sn) doped zinc oxide (ZnO) thin films were synthesized by sol-gel spin coating method using zinc acetate di-hydrate and tin chloride di-hydrate as the precursor materials. The films were deposited on glass and silicon substrates and annealed at different temperatures in air ambient. The agglomeration of grains was observed by the addition of Sn in ZnO film with an average grain size of 60 nm. The optical properties of the films were studied using UV-VIS-NIR spectrophotometer. The optical band gap energies were estimated at different concentrations of Sn. The MOS capacitors were fabricated using Sn doped ZnO films. The capacitance-voltage (C-V), dissipation vs. voltage (D-V) and current-voltage (I-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated. The porosity and surface area of the films were increased with the doping of Sn which makes these films suitable for opto-electronic applications. (C) 2012 Elsevier B.V. All rights reserved.

Substrate integrated Lead-Carbon hybrid ultracapacitor with flooded, absorbent glass mat and silica-gel electrolyte configurations

Lead-Carbon hybrid ultracapacitors (Pb-C HUCs) with flooded, absorbent-glass-mat (AGM) and silica-gel sulphuric acid electrolyte configurations are developed and performance tested. Pb-C HUCs comprise substrate-integrated PbO2 (SI-PbO2) as positive electrodes and high surface-area carbon with graphite-sheet substrate as negative electrodes. The electrode and silica-gel electrolyte materials are characterized by XRD, XPS, SEM, TEM, Rheometry, BET surface area, and FTIR spectroscopy in conjunction with electrochemistry. Electrochemical performance of SI-PbO2 and carbon electrodes is studied using cyclic voltammetry with constant-current charge and discharge techniques by assembling symmetric electrical-double-layer capacitors and hybrid Pb-C HUCs with a dynamic Pb(porous)/PbSO4 reference electrode. The specific capacitance values for 2 V Pb-C HUCs are found to be 166 F/g, 102 F/g and 152 F/g with a faradaic efficiency of 98%, 92% and 88% for flooded, AGM and gel configurations, respectively.

Morphology Controlled Growth of Meso-Porous Co3O4 Nanostructures and Study of Their Electrochemical Capacitive Behavior

The morphology of nanocrystalline Co3O4 synthesized through microwave irradiation of a solution of a cobalt complex is found to depend reproducibly on the conditions of synthesis and, in particular, on the composition of the solvent used. Despite the rapidity of the process, oriented aggregation occurs under certain conditions, depending on solvent composition. Annealing the oriented samples leads to microstructures with significant porosity, rendering the material suitable as electrodes for electrochemical capacitors. Electrochemical analysis of the oxide samples was carried out in 0.1M Na2SO4 electrolyte vs. Ag/AgCl electrode. A stable specific capacitance of 221 F/g was measured for a meso-porous sample displaying oriented aggregation. Stability of these oxide materials were checked for longer charge-discharge cycling. (C) 2012 The Electrochemical Society. DOI: 10.1149/2.002210jes] All rights reserved.

A Hybrid Five-Level Inverter With Common-Mode Voltage Elimination Having Single Voltage Source for IM Drive Applications

A new hybrid five-level inverter topology with common-mode voltage (CMV) elimination for induction motor drive is proposed in this paper. This topology has only one dc source, and different voltage levels are generated by using this voltage source along with floating capacitors charged to asymmetrical voltage levels. The pulsewidth modulation (PWM) scheme employed in this topology balances the capacitor voltages at the required levels at any power factor and modulation index while eliminating the CMV. This inverter has good fault-tolerant capability as it can be operated in three-or two-level mode with CMV elimination, in case of any failure in the H-bridges. More voltage levels with CMV elimination can be realized from this topology but only in a limited range of modulation index and power factor. Extensive simulation is done to validate the PWM technique for CMV elimination and balancing of the capacitor voltages. The experimental verification of the proposed inverter-fed induction motor is carried out in the linear modulation and overmodulation regions. The steady-state and transient operations of the drive are verified. The dynamics of the capacitor voltage balancing is also tested. The experimental results demonstrate that the proposed topology can be considered for industrial drive applications.

A 12 V Substrate-Integrated PbO2-Activated Carbon Asymmetric Hybrid Ultracapacitor with Silica-Gel-Based Inorganic-Polymer Electrolyte

A 12 V Substrate-Integrated PbO2-Activated Carbon hybrid ultracapacitor (SI-PbO2-AC HUCs) with silica-gel sulfuric acid electrolyte is developed and performance tested. The performance of the silica-gel based hybrid ultracapacitor is compared with flooded and AGM-based HUCs. These HUCs comprise substrate-integrated PbO2 (SI-PbO2) as positive electrodes and high surface-area activated carbon with dense graphite-sheet substrate as negative electrodes. 12 V SI-PbO2-AC HUCs with flooded, AGM and gel electrolytes are found to have capacitance values of 308 F, 184 F, and 269 F at C-rate and can be pulse charged and discharged for 100,000 cycles with only a nominal decrease in their capacitance values. The best performance is exhibited by gel-electrolyte HUCs.

Multilevel Dodecagonal Voltage Space Vector Generation using Flying Capacitor topology for Induction motor drives

In this paper, a multilevel flying capacitor inverter topology suitable for generating multilevel dodecagonal space vectors for an induction motor drive, is proposed. Because of the dodecagonal space vectors, it has increased modulation range with the absence of all 6n +/- 1, (n=odd) harmonics in the phase voltage and currents. The topology, realized by flying capacitor three level inverters feeding an open-end winding induction motor, does not suffer the neutral point voltage imbalance issues seen in NPC inverters and the capacitors have inherent charge-balancing capability with PWM control using switching state redundancies. Furthermore, the proposed technique uses lesser number of power supplies compared to cascaded H-bridge or NPC based dodecagonal schemes and has better ride-through capability. Finally, the voltage control is obtained through a simple carrier-based space vector PWM scheme implemented on a DSP.

Effect of Temperature Cycling on Conduction Mechanisms in CdTe Thin Films

CdTe thin films of 500 thickness prepared by thermal evaporation technique were analyzed for leakage current and conduction mechanisms. Metal-insulator-metal (MIM) capacitors were fabricated using these films as a dielectric. These films have many possible applications, such as passivation for infrared diodes that operate at low temperatures (80 K). Direct-current (DC) current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed on these films. Furthermore, the films were subjected to thermal cycling from 300 K to 80 K and back to 300 K. Typical minimum leakage currents near zero bias at room temperature varied between 0.9 nA and 0.1 mu A, while low-temperature leakage currents were in the range of 9.5 pA to 0.5 nA, corresponding to resistivity values on the order of 10(8) a''broken vertical bar-cm and 10(10) a''broken vertical bar-cm, respectively. Well-known conduction mechanisms from the literature were utilized for fitting of measured I-V data. Our analysis indicates that the conduction mechanism in general is Ohmic for low fields < 5 x 10(4) V cm(-1), while the conduction mechanism for fields > 6 x 10(4) V cm(-1) is modified Poole-Frenkel (MPF) and Fowler-Nordheim (FN) tunneling at room temperature. At 80 K, Schottky-type conduction dominates. A significant observation is that the film did not show any appreciable degradation in leakage current characteristics due to the thermal cycling.

Composition, structure and electrical properties of DC reactive magnetron sputtered Al2O3 thin films

Thin films of alumina (Al2O3) were deposited over Si < 1 0 0 > substrates at room temperature at an oxygen gas pressure of 0.03 Pa and sputtering power of 60 W using DC reactive magnetron sputtering. The composition of the as-deposited film was analyzed by X-ray photoelectron spectroscopy and the O/Al atomic ratio was found to be 1.72. The films were then annealed in vacuum to 350, 550 and 750 degrees C and X-ray diffraction results revealed that both as-deposited and post deposition annealed films were amorphous. The surface morphology and topography of the films was studied using scanning electron microscopy and atomic force microscopy, respectively. A progressive decrease in the root mean square (RMS) roughness of the films from 1.53 nm to 0.7 nm was observed with increase in the annealing temperature. Al-Al2O3-Al thin film capacitors were then fabricated on p-type Si < 1 0 0 > substrate to study the effect of temperature and frequency on the dielectric property of the films and the results are discussed.

In-situ impedance spectroscopy of layer-by-layer self-assembly of polyelectrolytes

In-situ impedance spectroscopy of layer-by-layer self-assembly of weak polyelectrolytes is presented. Interdigitated capacitors with active area of 1×1 mm2 and electrode spacing of 5 μm are fabricated and used for this purpose. Measurement results indicate that the impedance decreases with increase in number of polyelectrolyte layers. About 2.5% of relative change in magnitude of impedance at 104.7 KHz is seen for four bi-layers of Poly(Allylamine Hydrochloride) (PAH)/Poly(Acrylic acid) (PAA). An electrical equivalent for polyelectrolyte binding is obtained.

Variable field ion traps

This paper presents a technique to vary the electric field within a cylindrical ion trap (CIT) mass spectrometer while it is in operation. In this technique, the electrodes of the CIT are split into number of mini-electrodes and different voltages are applied to these split-electrodes to achieve the desired field. In our study we have investigated two geometries of the split-electrode CIT. In the first, we retain the flat endcap electrodes of the CIT but split the ring electrode into five mini-rings. In the second configuration, we split the ring electrode of the CIT into three mini-rings and also divide the endcaps into two mini-discs. By applying different potentials to the mini-rings and mini-discs of these geometries we have shown that the field within the trap can be optimized to desired values. In our study, two different types of fields were targeted. In the first, potentials were adjusted to obtain a linear electric field and, in the second, a controlled higher order even multipole field was obtained by adjusting the potential. We have shown that the different potentials required can be derived from a single RF generator by connecting appropriate capacitor terminations to split electrodes. The field within the trap can be modified by changing the values of the external capacitors. (C) 2013 Elsevier B.V. All rights reserved.

A Reduced Device-Count Hybrid Multilevel Inverter Topology with single DC Source and Improved Fault Tolerance

A new hybrid multilevel power converter topology is presented in this paper. The proposed power converter topology uses only one DC source and floating capacitors charged to asymmetrical voltage levels, are used for generating different voltage levels. The SVPWM based control strategy used in this converter maintains the capacitor voltages at the required levels in the entire modulation range including the over-modulation region. For the voltage levels: nine and above, the number of components required in the proposed topology is significantly lower, compared to the conventional multilevel inverter topologies. The number of capacitors required in this topology reduces drastically compared to the conventional flying capacitor topology, when the number of levels in the inverter output increases. This topology has better fault tolerance, as it is capable of operating with reduced number of levels, in the entire modulation range, in the event of any failure in the H-bridges. The transient as well as the steady state performance of the nine-level version of the proposed topology is experimentally verified in the entire modulation range including the over-modulation region.