919 resultados para Biased signaling
Resumo:
Insect PGRPs can function as bacterial recognition molecules triggering proteolytic and/or signal transduction pathways, with the resultant production of antimicrobial peptides. To explore if zebrafish peptidoglycan recognition protein SC (zfPGRP-SC) has such effects, RNA interference (siRNA) and high-density oligonucleotide microarray analysis were used to identify differentially expressed genes regulated by zfPGRP-SC. The mRNA levels for a set of genes involved in Toll-like receptor signaling pathway, such as TLRs, SARM, MyD88, TRAF6 and nuclear factor (NF)-kappa B2 (p100/p52), were examined by quantitative RT-PCR (QT-PCR). The results from the arrays and QT-PCR showed that the expression of 133 genes was involved in signal transduction pathways, which included Toll-like receptor signaling, Wnt signaling, BMP signaling, insulin receptor signaling, TGF-beta signaling, GPCR signaling, small GTPase signaling, second-messenger-mediated signaling, MAPK signaling, JAK/STAT signaling, apoptosis and anti-apoptosis signaling and other signaling cascades. These signaling pathways may connect with each other to form a complex network to regulate not just immune responses but also other processes such as development and apoptosis. When transiently over-expressed in HEK293T cells, zfPGRP-SC inhibited NF-kappa B activity with and without lipopolysacharide (LPS) stimulation. (C) 2008 Elsevier Ltd. All rights reserved.
Resumo:
In Drosophila, Toll signaling cascade, which resembles the mammalian Toll-like receptor (TLR)/IL-1R signaling pathways and regulates the expression of anti-microbial peptide genes, mainly relies on peptidoglycan recognition proteins (PGRPs) for the detection of bacterial pathogens. To explore the effect of zebrafish peptidoglycan recognition protein 6 (zfPGRP6) on Toll-like receptor signaling pathway, RNA interference (siRNA) and real time quantitative PCR (RQ-PCR) methods were used to identify differentially expressed genes regulated by zfPGRP6. The target genes included TLR2, TLR3, TLR5, TLR7, TLR8, IL1R, Sterile-alpha and Armadillo motif containing protein (SARM), myeloid differentiation factor 88 (MyD88) and nuclear factor (NF)-kappa B2 (p100/p52). The results of RQ-PCR showed that RNAi-mediated Suppression of zfPGRP6 significantly down-regulated the expression of TLR2, TLR5, IL1R, SARM, MyD88 and p100/p52. The expression of beta-defensin-1 was also down-regulated in those embryos silenced by zfPGRP6. In challenge experiments to determine the anti-bacterial response to Gram-negative bacteria, RNAi knock-down of zfPGRP6 markedly increased susceptibility to Flavobacterium columnare. (C) 2008 Elsevier B.V. All rights reserved.
Resumo:
An analytical model for the spin filtering transport in a ferromagnetic-metal - Al2O3 - n-type semiconductor tunneling structure has been developed, and demonstrated that the ratio of the helicity-modulated photo-response to the chopped one is proportional to the sum of the relative asymmetry in conductance of two opposite spin-polarized tunneling channels and the MCD effect of the ferromagnetic metal film. The performed measurement in an iron-metal/Al2O3/n-type GaAs tunneling structure under the optical spin orientation has verified that all the aspects of the experimental results are very well in accordance with our model in the regime of the spin filtering. After the MCD effect of the iron film is calibrated by an independent measurement, the physical quantity of Delta G(t)/G(t) (Delta G(t) = G(t)(up arrow) - G(t)(down arrow) is the difference of the conductance between two opposite spin tunneling channels, G(t) =( G(t)(up arrow) + G(t)(down arrow))/2 the averaged tunneling conductance), which concerns us most, can be determined quantitatively with a high sensitivity in the framework of our analytical model. Copyright (c) EPLA, 2008.
Resumo:
High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 mu m Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 mu m, respectively. The dark current density is 0.37 mA/cm(2) and 29.4 mA/cm(2) at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30 mu m, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.
Resumo:
Rashba spin splitting (RSS) in biased semiconductor quantum wells is investigated theoretically based on eight-band k center dot p theory. We find that at large wave vectors, RSS is both nonmonotonic and anisotropic as a function of in-plane wave vector, in contrast to the widely used isotropic linear model. We derive an analytical expression for RSS, which can qualitatively reproduce such nonmonotonic behavior at large wave vectors. We also investigate numerically the dependence of RSS on the various band parameters and find that RSS increases with decreasing band gap and subband index, increasing valence band offset, external electric field, and well width. All these dependences can be qualitatively described by our analytical model.
Resumo:
We present a comprehensive study of the one-dimensional modulation instability of broad optical beams in biased photo refractive-photovoltaic crystals under steady-state conditions. We obtain the one-dimensional modulation instability growth rate by globally treating the space-charge field and by considering distinction between values of Eo in nonlocal effects and local effects in the space-charge field, where Eo is the field constant correlated with terms in the space-charge field, which depends on the external bias field, the bulk photovoltaic effect, and the ratio of the optical beam's intensity to that of the dark irradiance. The one-dimensional modulation instability growth rate in local effects can be determined from that in nonlocal effects. When the bulk photovoltaic effect is neglectable, irrespective of distinction between values of Eo in nonlocal effects and local effects in the space-charge field, the one-dimensional modulation instability growth rates in nonlocal effects and local effects are those of broad optical beams studied previously in biased photorefractive-nonphotovoltaic crystals. When the external bias field is absent, the one-dimensional modulation instability growth rates in nonlocal effects and local effects predict those of broad optical beams in open- and closed-circuit photorefractive-photovoltaic crystals. (c) 2004 Elsevier B.V. All rights reserved.
Resumo:
We show that bright-dark vector solitons are possible in biased photorefractive-photovoltaic crystals under steady-state conditions, which result from both the bulk photovoltaic effect and the spatially nonuniform screening of the external bias field. The analytical solutions of these vector solitons can be obtained in the case of \sigma\ much less than 1, where sigma is the parameter controlling the intensities of the two optical beams. In the limit of -1 < sigma much less than 1, these vector solitons can also be determined by use of simple numerical integration procedures. When the bulk photovoltaic effect is neglectable, these vector solitons are bright-dark vector screening solitons studied previously in the \sigma\ much less than 1 regime, and predict bright-dark vector screening solitons in the -1 < sigma less than or equal to 1 regime. When the external bias field is absent, these vector solitons predict bright-dark vector photovoltaic solitons in closed and open circuits. (C) 2002 Elsevier Science B.V. All rights reserved.
Resumo:
We investigate the modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals by globally treating the space-charge field. The modulation instability growth rate is obtained, which depends on the external bias field, on the bulk photovoltaic effect, and on the ratio of the optical beam's intensity to that of the dark irradiance. Our analysis indicates that this modulation instability growth rate is identical to the modulation instability growth rate studied previously in biased photorefractive-nonphotovoltaic crystals when the bulk photovoltaic effect is negligible for shorted circuits, and predicts the modulation instability growth rate in open- and closed-circuit photorefractive-photovoltaic crystals when the external bias field is absent.