986 resultados para BAND-STRUCTURES
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The propagation characteristics of fiexural waves in periodic grid structures designed with the idea of phononic crystals are investigated by combining the Bloch theorem with the finite element method. This combined analysis yields phase constant surfaces, which predict the location and the extension of band gaps, as well as the directions and the regions of wave propagation at assigned frequencies. The predictions are validated by computation and experimental analysis of the harmonic responses of a finite structure with 11 × 11 unit cells. The fiexural wave is localized at the point of excitation in band gaps, while the directional behaviour occurs at particular frequencies in pass bands. These studies provide guidelines to designing periodic structures for vibration attenuation.
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Using the multiband quantum transmitting boundary method (MQTBM), hole resonant tunneling through AlGaAs/GaMnAs junctions is investigated theoretically. Because of band-edge splitting in the DMS layer, the current for holes with different spins are tuned in resonance at different biases. The bound levels of the "light" hole in the quantum well region turned out to be dominant in the tunneling channel for both "heavy" and "light" holes. The resonant tunneling structure can be used as a spin filter for holes for adjusting the Fermi energy and the thickness of the junctions.
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High-spin states in Pt-189 have been studied with the in-beam gamma-spectroscopy method via the Yb-176(O-18, 5n) reaction at beam energies of 88 MeV and 95 MeV. A new level scheme of Pt-189 has been established. Rotational bands based on the upsilon i(13/2)(-1), upsilon f(5/2)(p(3/2)) and upsilon i(13/2)(-2)upsilon f(p(3/2)) configurations, as well as several structures with irregular level spacings, have been observed. Properties of rotational bands have been analyzed in the framework of triaxial particle-rotor model. A gamma similar to -30 degrees triaxial shape and a near prolate shape have been proposed to the upsilon i(13/2)(-1) and uf(5/2)(p(3/2)) bands, respectively. Two Delta I=2 transition sequences with similar energies have been observed, and they have been proposed to be associated with the upsilon i(13/2)(-1)upsilon f(5/2)(p(3/2)) configuration. According to the relevant Nilsson orbitals, the bands built on the upsilon i(13/2)(-1)upsilon f(5/2)(p(3/2)) configuration could be interpreted as a pair of pseudo-spin partner.
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A series of donor-acceptor low-bandgap conjugated polymers, i.e., PTnBT (n = 2-6), composed of alternating oligothiophene (OTh) and 2,1,3-benzothiadiazole (BT) units were synthesized by Stille cross-coupling polymerization. The number of thiophene rings in OTh units, that is n, was tuned from 2 to 6. All these polymers display two absorption bands in both solutions and films with absorption maxima depending on n. From solution to film, absorption spectra of the polymers exhibit a noticeable red shift. Both high- and low-energy absorption bands or P'F5BT and PT6BT films locate in the visible region, which are at 468 and 662 nm for PT5BT and 494 and 657 nm for PT6BT.
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Photonic crystals (PhCs) influence the propagation of light by their periodic variation in dielectric contrast or refractive index. This review outlines the attractive optical qualities inherent to most PhCs namely the presence of full or partial photonic band gaps and the possibilities they present towards the inhibition of spontaneous emission and the localization of light. Colloidal self-assembly of polymer or silica spheres is one of the most favoured and low cost methods for the formation of PhCs as artificial opals. The state of the art in growth methods currently used for colloidal self-assembly are discussed and the use of these structures for the formation of inverse opal architectures is then presented. Inverse opal structures with their porous and interconnected architecture span several technological arenas - optics and optoelectronics, energy storage, communications, sensor and biological applications. This review presents several of these applications and an accessible overview of the physics of photonic crystal optics that may be useful for opal and inverse opal researchers in general, with a particular emphasis on the recent use of these three-dimensional porous structures in electrochemical energy storage technology. Progress towards all-optical integrated circuits may lie with the concepts of the photonic crystal, but the unique optical and structural properties of these materials and the convergence of PhC and energy storage disciplines may facilitate further developments and non-destructive optical analysis capabilities for (electro)chemical processes that occur within a wide variety of materials in energy storage research.
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B3-LYP/cc-pVDZ calculations of the gas-phase structure and vibrational spectra of the isolated molecule cyclo(L-Ser-L-Ser), a cyclic di-amino acid peptide (CDAP), were carried out by assuming C-2 symmetry. It is predicted that the minimum-energy structure is a boat conformation for the diketopiperazine (DKP) ring with both L-Beryl side chains being folded slightly above the ring. An additional structure of higher energy (15.16 kJ mol(-1)) has been calculated for a DKP ring with a planar geometry, although in this case two fundamental vibrations have been calculated with imaginary wavenumbers. The reported X-ray crystallographic structure of cyclo(L-Ser-L-Ser), shows that the DKP ring displays a near-planar conformation, with both the two L-Beryl side chains being folded above the ring. It is hypothesized that the crystal packing forces constrain the DKP ring in a planar conformation and it is probable that the lower energy boat conformation may prevail in the aqueous environment. Raman scattering and Fourier-transform infrared (FT-IR) spectra of solid state and aqueous solution samples of cyclo(L-Ser-L-Ser) are reported and discussed. Vibrational band assignments have been made on the basis of comparisons with the calculated vibrational spectra and band wavenumber shifts upon deuteration of labile protons. The experimental Raman and IR results for solid-state samples show characteristic amide I vibrations which are split (Raman:1661 and 1687 cm(-1), IR:1666 and 1680 cm(-1)), possibly due to interactions between molecules in a crystallographic unit cell. The cis amide I band is differentiated by its deuterium shift of ~ 30 cm(-1), which is larger than that previously reported for trans amide I deuterium shifts. A cis amide II mode has been assigned to a Raman band located at 1520 cm(-1). The occurrence of this cis amide II mode at a wavenumber above 1500 cm(-1) concurs with results of previously examined CDAP molecules with low molecular weight substituents on the C-alpha atoms, and is also indicative of a relatively unstrained DKP ring.
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In this paper, we show that a multilayer freestanding slot array can be designed to give an insertion loss which is significantly lower than the value obtainable from a conventional dielectric backed printed frequency selective surface (FSS). This increase in filter efficiency is highlighted by comparing the performance of two structures designed to provide frequency selective beamsplitting in the quasioptical feed train of a submillimeter wave space borne radiometer. A two layer substrateless FSS providing more than 20 dB of isolation between the bands 316.5â??325.5 GHz and 349.5â??358.5 GHz, gives an insertion loss of 0.6 dB when the filter is orientated at 45 incidence in the TM plane, whereas the loss exhibited by a conventional printed FSS is in excess of 2 dB. A similar frequency response can be obtained in the TE plane, but here a triple screen structure is required and the conductor loss is shown to be comparable to the absorption loss of a dielectric backed FSS. Experimental devices have been fabricated using a precision micromachining technique. Transmission measurements performed in the range 250â??360 GHz are in good agreement with the simulated spectral performance of the individual periodic screens and the two multilayer freestanding FSS structures.
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We have investigated the influence of the material properties of the silicon device layer on the generation of defects, and in particular slip dislocations, in trenched and refilled fusion-bonded silicon-on-insulator structures. A strong dependence of the ease of slip generation on the type of dopant species was observed, with the samples falling into three basic categories; heavily boron-doped silicon showed ready slip generation, arsenic and antimony-doped material was fairly resistant to slip, while silicon moderately or lightly doped with phosphorous or boron gave intermediate behavior. The observed behavior appears to be controlled by differences in the dislocation generation mechanism rather than by dislocation mobility. The introduction of an implanted buried layer at the bonding interface was found to result in an increase in slip generation in the silicon, again with a variation according to the dopant species. Here, the greatest slip occurred for both boron and antimony-implanted samples. The weakening of the implanted material may be related to the presence of a band of precipitates observed in the silicon near the bonding interface. (C) 2001 The Electrochemical Society.
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The electronic and bonding properties of nitrogenated carbon nanotubes (N-CNTs) exposed to chlorine plasma were investigated using C and N K-edge x-ray absorption near-edge structure (XANES) and scanning photoelectron microscopy (SPEM). The C and N K-edge XANES spectra of chlorine-treated N-CNTs consistently reveal the formation of pyridinelike N-CNTs by the observation of 1s ->pi(*)(e(2u)) antibonding and 1s ->pi(*)(b(2g)) bonding states. The valence-band photoemission spectra obtained from SPEM images indicate that chlorination of the nanotubes enhances the C-N bonding. First-principles calculations of the partial densities of states in conjunction with C K-edge XANES data identify the presence of C-Cl bonding in chlorine treated N-CNTs. (C) 2007 American Institute of Physics.
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The halide derivatives of yttrium ortho-oxomolybdate YX[MoO4] (X = F, Cl) both crystallize in the monoclinic system with four formula units per unit cell. YF[MoO4] exhibits a primitive cell setting (space group P2(1)/c, a = 519.62(2) pm, b = 1225.14(7) pm, c = 663.30(3) pm, beta = 112.851(4)degrees), whereas the lattice of YCl[MoO4] shows face-centering (space group C2/m; a = 1019.02(5) pm, b = 720.67(4) pm, c = 681.50(3) pm, beta = 107.130(4)degrees). The two compounds each contain crystallographically unique Y3+ cations, which are found to have a coordination environment of six oxide and two halide anions. In the case of YF[MoO4], the coordination environment is seen as square antiprisms, and for YCl[MoO4], trigon-dodecahedra. are found. The discrete tetrahedral [MoO4](2-) units of the fluoride derivative are exclusively bound by six terminal Y3+ cations, while those of the chloride compound show a 5-fold coordination around the tetrahedra with one edge-bridging and four terminal Y3+ cations. The halide anions in each compound exhibit a coordination number of two, building up isolated planar rhombus-shaped units according to [Y2F2](4+) in YF[MoO4] and [Y2Cl2](4+) in YCl[MoO4], respectively. Both compounds were synthesized at high temperatures using Y2O3, MoO3, and the corresponding yttrium trihalide in a molar ratio of 1:3:1. Single crystals of both are insensitive to moist air and are found to be coarse shaped and colorless with optical band gaps situated in the near UV around 3.78 eV for the fluoride and 3.82 eV for the chloride derivative. Furthermore, YF[MoO4] seems to be a suitable material for doping to obtain luminescent materials because the Eu3+-doped compound shows an intense red luminescence, which has been spectroscopically investigated.
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Oversampled narrow-band single-loop and multistage resonator-based bandpass sigma-delta (Σ-Δ) modulators that can accommodate different passband center to sampling frequency ratios are reported. These tunable bandpass configurations are designed by analytically determining and subsequently verifying through detailed empirical simulations the required compensation hardware to deliver enhanced noise-shaping. It is demonstrated that comparatively superior in-band signal-to-noise ratios and dynamic ranges are attributed to the inclusion of appropriate digital feedforward and feedback compensators within these structures.
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In this paper, the design of low profile antennas by using Electromagnetic Band Gap (EBG) structures is introduced. Taking advantage of the fact that they can behave as Perfect Magnetic Conductor (PMC), it is shown that these structures exhibit dual band in-phase reflection at WLAN (Wireless Local Area Network) bands, the 2.4 GHz and 5.2 GHz bands. These structures are applied to PIFA (Planar Inverted-F Antenna) and the results show that it is possible to obtain low profile PIFA's.
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La présente thèse porte sur l'utilité de la théorie de la fonctionnelle de la densité dans le design de polymères pour applications photovoltaïques. L'étude porte d'abord sur le rôle des calculs théoriques pour la caractérisation des polymères dans le cadre de collaborations entre la théorie et l'expérience. La stabilité et les niveaux énergétiques de certaines molécules organiques sont étudiés avant et après la sulfuration de leurs groupements carbonyles, un procédé destiné à diminuer le band gap. Les propriétés de dynamique électronique, de séparation des porteurs de charges et de spectres de vibrations Raman sont également explorées dans un polymère à base de polycarbazole. Par la suite, l'utilité des calculs théoriques dans le design de polymères avant leurs synthèses est considérée. La théorie de la fonctionnelle de la densité est étudiée dans le cadre du modèle de Scharber afin de prédire l'efficacité des cellules solaires organiques. Une nouvelle méthode de design de polymères à faible band gaps, basée sur la forme structurale aromatique ou quinoide est également présentée, dont l'efficacité surpasse l'approche actuelle de donneur-accepteur. Ces études sont mises à profit dans l'exploration de l'espace moléculaire et plusieurs candidats de polymères aux propriétés électroniques intéressantes sont présentés.
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Cette thèse porte sur le calcul de structures électroniques dans les solides. À l'aide de la théorie de la fonctionnelle de densité, puis de la théorie des perturbations à N-corps, on cherche à calculer la structure de bandes des matériaux de façon aussi précise et efficace que possible. Dans un premier temps, les développements théoriques ayant mené à la théorie de la fonctionnelle de densité (DFT), puis aux équations de Hedin sont présentés. On montre que l'approximation GW constitue une méthode pratique pour calculer la self-énergie, dont les résultats améliorent l'accord de la structure de bandes avec l'expérience par rapport aux calculs DFT. On analyse ensuite la performance des calculs GW dans différents oxydes transparents, soit le ZnO, le SnO2 et le SiO2. Une attention particulière est portée aux modèles de pôle de plasmon, qui permettent d'accélérer grandement les calculs GW en modélisant la matrice diélectrique inverse. Parmi les différents modèles de pôle de plasmon existants, celui de Godby et Needs s'avère être celui qui reproduit le plus fidèlement le calcul complet de la matrice diélectrique inverse dans les matériaux étudiés. La seconde partie de la thèse se concentre sur l'interaction entre les vibrations des atomes du réseau cristallin et les états électroniques. Il est d'abord montré comment le couplage électron-phonon affecte la structure de bandes à température finie et à température nulle, ce qu'on nomme la renormalisation du point zéro (ZPR). On applique ensuite la méthode GW au calcul du couplage électron-phonon dans le diamant. Le ZPR s'avère être fortement amplifié par rapport aux calculs DFT lorsque les corrections GW sont appliquées, améliorant l'accord avec les observations expérimentales.
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Photonic band-gap (PBG) structures are utilized in microwave components as filters to suppress unwanted signals. In this work, rectangular perforations were created in the ground plane of a microstrip line to construct a PBG structure. A gold-coated alumina substrate was utilized to switch or tune the bandstop characteristics of this structure. It was demonstrated that the bandstop characteristics were switched off from - 35 to - 1 dB at 16 GHz. Tuning of the bandstop edge with a shift of 1.5 GHz was also shown