Plume attenuation under high power Nd:yttritium-aluminum-garnet laser welding

During high-power continuous wave (cw) Nd:yttritium-aluminum-garnet (YAG) laser welding a vapor plume is formed containing vaporized material ejected from the keyhole. The gas used as a plume control mechanism affects the plume shape but not its temperature, which has been found to be less than 3000 K, independent of the atmosphere and plume control gases. In this study high-power (up to 8 kW) cw Nd:YAG laser welding has been performed under He, Ar, and N2 gas atmospheres, extending the power range previously studied. The plume was found to contain very small evaporated particles of diameter less than 50 nm. Rayleigh and Mie scattering theories were used to calculate the attenuation coefficient of the incident laser power by these small particles. In addition the attenuation of a 9 W Nd:YAG probe laser beam, horizontally incident across the plume generated by the high-power Nd:YAG laser, was measured at various positions with respect to the beam-material interaction point. Up to 40% attenuation of the probe laser power was measured at positions corresponding to zones of high concentration of vapor plume, shown by high-speed video measurements. These zones interact with the high-power Nd:YAG laser beam path and, can result in significant laser power attenuation. © 2004 Laser Institute of America.

Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering

Aluminum nitride (AlN) piezoelectric thin films with c-axis crystal orientation on polymer substrates can potentially be used for development of flexible electronics and lab-on-chip systems. In this study, we investigated the effects of deposition parameters on the crystal structure of AlN thin films on polymer substrates deposited by reactive direct-current magnetron sputtering. The results show that low sputtering pressure as well as optimized N 2/Ar flow ratio and sputtering power is beneficial for AlN (002) orientation and can produce a highly (002) oriented columnar structure on polymer substrates. High sputtering power and low N 2/Ar flow ratio increase the deposition rate. In addition, the thickness of Al underlayer also has a strong influence on the film crystallography. The optimal deposition parameters in our experiments are: deposition pressure 0.38 Pa, N 2/Ar flow ratio 2:3, sputtering power 414 W, and thickness of Al underlayer less than 100 nm. © 2012 Elsevier B.V. All rights reserved.

Reusing steel and aluminum components at end of product life.

Reusing steel and aluminum components would reduce the need for new production, possibly creating significant savings in carbon emissions. Currently, there is no clearly defined set of strategies or barriers to enable assessment of appropriate component reuse; neither is it possible to predict future levels of reuse. This work presents a global assessment of the potential for reusing steel and aluminum components. A combination of top-down and bottom-up analyses is used to allocate the final destinations of current global steel and aluminum production to product types. A substantial catalogue has been compiled for these products characterizing key features of steel and aluminum components including design specifications, requirements in use, and current reuse patterns. To estimate the fraction of end-of-life metal components that could be reused for each product, the catalogue formed the basis of a set of semistructured interviews with industrial experts. The results suggest that approximately 30% of steel and aluminum used in current products could be reused. Barriers against reuse are examined, prompting recommendations for redesign that would facilitate future reuse.

Mapping the global flow of aluminum: from liquid aluminum to end-use goods.

Demand for aluminum in final products has increased 30-fold since 1950 to 45 million tonnes per year, with forecasts predicting this exceptional growth to continue so that demand will reach 2-3 times today's levels by 2050. Aluminum production uses 3.5% of global electricity and causes 1% of global CO2 emissions, while meeting a 50% cut in emissions by 2050 against growing demand would require at least a 75% reduction in CO2 emissions per tonne of aluminum produced--a challenging prospect. In this paper we trace the global flows of aluminum from liquid metal to final products, revealing for the first time a complete map of the aluminum system and providing a basis for future study of the emissions abatement potential of material efficiency. The resulting Sankey diagram also draws attention to two key issues. First, around half of all liquid aluminum (~39 Mt) produced each year never reaches a final product, and a detailed discussion of these high yield losses shows significant opportunities for improvement. Second, aluminum recycling, which avoids the high energy costs and emissions of electrolysis, requires signification "dilution" (~ 8 Mt) and "cascade" (~ 6 Mt) flows of higher aluminum grades to make up for the shortfall in scrap supply and to obtain the desired alloy mix, increasing the energy required for recycling.

Mechanisms of projectile penetration in Dyneema® encapsulated aluminum structures

Polymer composites comprising ultra-high molecular weight polyethylene (UHWMPE) fibers in a compliant matrix are now widely used in ballistic applications with varying levels of success. This is primarily due to a poor understanding of the mechanics of penetration of these composites in ballistic protection systems. In this study, we report experimental observations of the penetration mechanisms in four model systems impacted by a 12.7 mm diameter spherical steel projectile. The four model targets designed to highlight different penetration mechanisms in Dyneema® UHWMPE composites were: (i) a bare aluminum plate; (ii) the same plate fully encased in a 5.9 mm thick casing of Dyneema®; (iii) the fully encased plate with a portion of the Dyneema® removed from the front face so that the projectile impacts directly the Al plate; and (iv) the fully encased plate with a portion of the Dyneema® removed from the rear face so that the projectile can exit the Al plate without again interacting with the Dyneema®. A combination of synchronized high speed photography with three cameras, together with post-test examination of the targets via X-ray tomography and optical microscopy was used to elucidate the deformation and perforation mechanisms. The measurements show that the ballistic resistance of these targets increases in the order: bare Al plate, rear face cutout target, fully encased target and front face cutout target. These findings are explained based on the following key findings: (a) the ballistic performance of Dyneema® plates supported on a foundation is inferior to Dyneema® plates supported along their edges; (b) the apparent ballistic resistance of Dyneema® plates increases if the plates are given an initial velocity prior to the impact by the projectile, thereby reducing the relative velocity between the Dyneema® plate and projectile; and (c) when the projectile is fragmented prior to impact, the spatially and temporally distributed loading enhances the ballistic resistance of the Dyneema®. The simple model targets designed here have elucidated mechanisms by which Dyneema® functions in multi-material structures. © 2014 Elsevier Ltd.

Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation

The interface dipole and its role in the effective work function (EWF) modulation by Al incorporation are investigated. Our study shows that the interface dipole located at the high-k/SiO2 interface causes an electrostatic potential difference across the metal/high-k interface, which significantly shifts the band alignment between the metal and high-k, consequently modulating the EWF. The electrochemical potential equalization and electrostatic potential methods are used to evaluate the interface dipole and its contribution. The calculated EWF modulation agrees with experimental data and can provide insight to the control of EWF in future pMOS technology.

Optical properties of aluminum-, gallium-, and indium-doped Bi4Ti3O12 thin films

Undoped and Al-, Ga-, and In-doped Bi4Ti3O12 thin films were prepared on fused quartz substrates by chemical solution deposition. Their microstructures and optical properties were investigated by x-ray diffraction and UV-visible-NIR spectrophotometer, respectively. The optical band-gap energies, Urbach energies, and linear refractive indices of all the films are derived from the transmittance spectrum. Following the single oscillator model, the dispersion parameters such as the average oscillator energy (E-0) and dispersion energy (E-d) are achieved. The energy band gap and refractive indices are found to decrease with introducing the dopants of Al, Ga, and In, which is useful for the band-gap engineering and optical waveguide devices. The refractive index dispersion parameter (E-0/S-0) increases and the chemical bonding quantity (beta) decreases in all the films compared with those of bulk. It is supposed to be caused by the nanosize grains in films. (c) 2009 American Institute of Physics. [DOI 10.1063/1.3138813]

Chemical liquid phase deposition of thin aluminum oxide films

Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al-2(SO4)(3)]=0.0837 mol.L-1, [NaHCO3]=0.214 mol.L-1, 15 degreesC. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy, Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.

Surface-enhanced resonant Raman spectroscopy (SERRS) of single-walled carbon nanotubes absorbed on the Ag-coated anodic aluminum oxide (AAO) surface

In this paper, we developed a new kind of substrate, the silver-coated anodic aluminum oxide (AAO), to investigate the characters of surface-enhanced resonant Raman scattering (SERRS) of the dilute single-walled carbon nanotubes. Homogeneous Ag-coated AAO substrate was obtained by decomposing the AgNO3 on the surface of AAO. single-walled carbon nanotubes (SWNTs) were directly grown onto this substrate through floating catalyst chemical vapor deposition method (CVD). SERRS of SWNTs was carried out using several different wavelength lasers. The bands coming from metallic SWNTs were significantly enhanced. The two SERRS mechanisms, the "electromagnetic" and "chemical" mechanism, were mainly responsible for the experiment results. (c) 2005 Elsevier B.V. All rights reserved.

In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52x10(20) cm(-3) with Hall mobility of about 1 cm(2)/Vs and resistivity of 1.6 similar to 2.2x10(-2) Omega cm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Omega cm for resistivity, 5.3x10(18) cm(-3) for hole carrier concentration, and 7 cm(2)/VS for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained.