Mode multiplexing at 2×20Gbps over 19-cell hollow-core photonic band gap fibre

This paper demonstrates the first mode-multiplexed system over 19-cell hollow-core photonic band gap fibre, at 2×20Gbps using the LP0,1 and LP2,1-like modes. © 2012 OSA.

Mode multiplexing at 2×20Gbps over 19-cell hollow-core photonic band gap fibre

This paper demonstrates the first mode-multiplexed system over 19-cell hollow-core photonic band gap fibre, at 2×20Gbps using the LP0,1 and LP2,1-like modes. © 2012 OSA.

A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy

A self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35 mum at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (InAs)(1)/GaAs)(1)monolayer deposition method. The photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5Ga0.5As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In0.2Ga0.8As layer overgrown on the top of islands. The mound-like morphology of the islands elongated along the [1 (1) over bar0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1 (1) over bar0] direction. Our results present important information for the fabrication of 1.3 mum wavelength quantum dot devices.

~(19)F+~(27)Al耗散反应产物激发函数的长程关联

在中国原子能科学研究院的HI-13串列静电加速器上完成了19F+27Al耗散反应产物的激发函数测量。束流19F的入射能量从110.25MeV到118.75MeV,步长250keV,测量了实验室系+57°,+31°,-15°和-29°出射的类弹产物B,C,N,O,F和Ne的激发函数。观测到激发函数具有耗散反应的特征涨落结构,分析了激发函数之间的长程角度关联以及强烈的电荷数关联。

~(19)F+~(27)Al耗散反应中双核系统的转动与形变

测量了19F+27Al耗散反应产物B,C,N,O,F和Ne的激发函数,入射束流的能量从110．25MeV 到118．75MeV,能量步长为250keV．从产物的能量自关联函数中提取了反应中所形成的中间双核系统的转动惯量,与相粘模型计算的刚体转动惯量相比较,结果表明形成的双核系统有大的形变．