Electronic ceramics based on polycrystalline SnO2, TiO2 and (Sn xTi1-x)O2 solid solution

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Low-voltage varistor based on (Sn,Ti)O-2 ceramics

A description is given of the nonohmic behavior obtained in (SnxTi1-x)O-2-based systems. A matrix founded on (SnxTi1-x)O-2-based systems doped with Nb2O5 leads to a low-voltage varistor system with nonlinear coefficient values of similar to9. The presence of the back-to-back Schottky-type barrier is observed based on the voltage dependence of the capacitance. When doped with CoO, the (SnxTi1-x)O(2)(.)based system presents higher nonlinear coefficient values (>30) than does the SnO2-based varistor system.

Improvement of the dielectric and ferroelectric properties in superlattice structure of Pb(Zr,Ti)O-3 thin films grown by a chemical solution route

Making heterolayered perovskite materials constitutes an approach for the creation of better dielectric and ferroelectric properties. In the experiment reported here, heterolayered PZT40/PZT60 films were grown on Pt/Ti/SiO2/Si (100) by a chemical solution deposition. The dielectric constant of the heterolayered thin film was significantly enhanced compared with that of pure PZT40 and PZT60 thin films. A dielectric constant of 701 at 100 kHz was observed for a stacking periodicity of six layers having a total thickness of 150 nm. The heterolayered film exhibited greater remanent polarization than PZT60 and PZT40 films. The values of remanent polarization were 7.9, 18.5, and 31 muC/cm(2), respectively, for pure PZT60, PZT40, and heterolayered thin films, suggesting that the superior dielectric and ferroelectric properties of the heterolayered thin film resulted from a cooperative interaction between the ferroelectric phases made from alternating tetragonal and rhombohedral phases of PZT, simulating the morphotropic phase boundary of this system. (C) 2004 American Institute of Physics.

A theoretical analysis of the TiO2/Sn doped (110) surface properties

We have used the periodic quantum-mechanical method with density functional theory at the B3LYP level in order to study TiO2/Sn doped (1 1 0) surfaces and have investigated the structural, electronic and energy band properties of these oxides. Our calculated relaxation directions for TiO2 is the experimental one and is also in agreement with other theoretical results. We also observe for the doped systems relaxation of lattice positions of the atoms. Modification of Sri, O and Ti charges depend on the planes and positions of the substituted atoms. Doping can modify the Fermi levels, energy gaps as well as the localization and composition of both valence and conduction band main components. Doping can also modify the chemical, electronic and optical properties of these oxides surfaces increasing their suitability for use as gas sensors and optoelectronic devices. (c) 2005 Elsevier B.V. All rights reserved.

Speciation analysis of Sn(II) and Sn(IV) using baker's yeast and inductively coupled plasma optical emission spectrometry

The use of Saccharomyces cerevisiae as a substrate to selectively retain Sn(II) and Sn(IV) has been investigated. Several factors affecting the retention of the analytes by yeast, such as pH, amount of biomass, temperature and time of contact were evaluated. Based on this study, a method for determination of Sn(II) and Sn(IV) combining inductively coupled plasma optical emission spectrometry (ICP OES) and solid phase extraction using Saccharomyces cerevisiae is proposed. The procedure consists of the selective retention of Sn(IV) by yeast at pH = 2.0 while Sn(II) remains in solution. Determination of tin in the solid phase was easily carried out by submitting a slurry of the yeast (0.5 g/40 mL) directly to ICP OES. The precision of the extraction procedure was characterized by an RSD lower than 4%. The detection limits of tin (3 sigma) in the solid phase and the liquid phase were 1.1 and 0.7 mu g L-1, respectively. The proposed approach was evaluated for determination of Sn(II) and Sn(IV) in spiked river water and real samples of industrial waste water (untreated and treated). For all samples, recoveries of spiked Sn(II) and Sn(IV) were between 85 and 112%.

Electrochemical oxidation of an acid dye by active chlorine generated using Ti/Sn(1-x)Ir O-x(2) electrodes

The generation of active chlorine on Ti/Sn(1-x)Ir (x) O-2 anodes, with different compositions of Ir (x = 0.01, 0.05, 0.10 and 0.30 ), was investigated by controlled current density electrolysis. Using a low concentration of chloride ions (0.05 mol L-1) and a low current density (5 mA cm(-2)) it was possible to produce up to 60 mg L-1 of active chlorine on a Ti/Sn0.99Ir0.01O2 anode. The feasibility of the discoloration of a textile acid azo dye, acid red 29 dye (C.I. 16570), was also investigated with in situ electrogenerated active chlorine on Ti/Sn(1-x)Ir (x) O-2 anodes. The best conditions for 100% discoloration and maximum degradation (70% TOC reduction) were found to be: NaCl pH 4, 25 mA cm(-2) and 6 h of electrolysis. It is suggested that active chlorine generation and/or powerful oxidants such as chlorine radicals and hydroxyl radicals are responsible for promoting faster dye degradation. Rate constants calculated from color decay versus time reveal a zero order reaction at dye concentrations up to 1.0 x 10(-4) mol L-1. Effects of other electrolytes, dye concentration and applied density currents also have been investigated and are discussed.

Thermal behavior of the Ti(IV), Zr(IV) and Pb(II) complexes with 5-nitro-8-hydroxyquinoline

Ti(IV), Zr(IV) and Pb(II) complexes with 5-nitro-8-hydroxyquinoline (5-NQ) were obtained by precipitation in acetone/ammonium solution medium. The compounds TiO(C9H5N2O3)(2).0.5H(2)O, ZrO(C9H5N2O3)(2)2H(2)O and Pb(C9H5N2O3)(2) were characterized by Elemental Analysis, X-ray Diffratometry and Infrared Absorption Spectrometry and their thermal behavior followed by TG/DTA. This present study intends to show the variations in the thermal behavior of the compounds and in the composition and/or structure of final oxide residues, in different atmospheres and heating rates.

Synthesis by the polymeric precursor method and characterization of undoped and Sn, Cr and V-doped ZrTiO4

In this work, zirconium titanate doped with 0. 1, 0.2, and 0.4 mole% of tin, chromium and vanadium was synthesized by the polymeric precursors method and characterized by thermal analysis (TG/DTA), X-ray diffraction (XRD), nitrogen adsorption and scanning electronic microscopy (SEM). The powder presented two mass losses attributed to the exit of water and to the pyrolysis of the organic material. The surface area reduction observed from 500 degrees C indicates the beginning of the sintering process. All the dopants led to changes in the lattice parameters and to the decrease of both crystallite size and particle size. (c) 2005 Elsevier B.V. All rights reserved.

Improvement of the ferroelectric properties of ABO(3) (A= Pb, Ca, Ba; B=Ti, Zr) films

High-quality ABO(3)/LaNiO3 (A = Ph, Ca, Ba; B = Ti, Zr) hetero structures have been grown on LaAlO3 (1 0 0) substrate by the chemical solution deposition method and crystallized by a microwave oven technique. The structural, morphological and electric properties were characterized by means of X-ray diffraction (XRD), atomic force microscope (AFM), and dielectric and ferroelectric measurements. XRD patterns revealed single-phase polycrystalline and oriented thin films whose feature depends on the composition of the films. The AFM surface morphologies showed a smooth and crack-free surface with the average grain size ranging from 116 to 300 nm for both LaNiO3 electrode and the ferroelectric films. Dielectric measurements on these samples revealed dielectric constants as high as 1800 at frequency of 100 KHz. Such results showed that the combination of the chemical solution method with the microwave process provides a promising technique to grow high-quality thin films with good dielectric and ferroelectric properties. (c) 2005 Elsevier Ltd. All rights reserved.

Temperature dependence of electron properties of Sn doped In2O3 nanobelts

This paper reports on the measurements of transport properties of high crystalline quality Sn doped In2O3 nanobelts. The samples presented metallic conduction in a large range of temperatures; however, at low temperatures, the resistivity showed a slight increase and the current-voltage curves showed a tendency to saturate even in the low-voltage range. From these observations, we discuss some arguments on the possibility of low dimensional conducting channels as the main responsible for the conduction at low temperatures. Additionally, we present an alternative technique for production of low resistance ohmic contacts, which can be further used in devices' construction. (C) 2007 Elsevier B.V. All rights reserved.

Preparation of Pb(Zr,Ti)O-3 thin films by soft chemical route

Lead zirconate titanate, Pb(Zr0.3Ti0.7)O-3 (PZT) thin films were prepared with success by the polymeric precursor method. Differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), Fourier-transform infrared spectroscopy (FT-IR), Micro-Raman spectroscopy and X-ray diffraction (XRD) were used to investigate the formation of the PZT perovskite phase. X-ray diffraction revealed that the film showed good crystallinity and no presence of secondary phases was identified. This indicates that the PZT thin films were crystallized in a single phase. PZT thin films showed a well-developed dense grain structure with uniform distribution, without the presence of rosette structure. The Raman spectra undoubtedly revealed these thin films in the tetragonal phase. For the thin films annealed at the 500-700 degreesC range, the vibration modes of the oxygen sublattice of the PZT perovskite phase were confirmed by FT-IR. The room temperature dielectric constant and dielectric loss of the PZT films, measured at 1 kHz were 646 and 0.090, respectively, for thin film with 365 nm thickness annealed at 700 degreesC for 2 h. A typical P-E hysteresis loop was observed and the measured values of P-s, P-r and E-c were 68 muC/cm(2), 44 muC/cm(2) and 123 kV/cm, respectively. The leakage current density was about 4.8 x 10(-7) A/cm(2) at 1.5 V. (C) 2003 Elsevier Ltd. All rights reserved.

Influence of interstitial elements on internal friction measurements in Nb and Nb-Zr alloys

Internal friction and frequency measurements as a function of temperature have been carried out in Nb and Nb-Zr policrystalline samples, using a torsion pendulum in the temperature range between 300K and 700K the heating rate was 1K/min and the pressure was kept better than 5x10(-3) mbar. Metals with bce lattice containing solute atoms dissolved interstitially often show anelastic behaviour due to a process know as stress-induced ordering responsible for the appearance of Snoek peaks. In the Nb sample it has been identified two constituent peaks corresponding to the interstitial-matrix interactions (Nb-O and Nb-N), but for the Nb-Zr samples with interstitial solute concentrations very close to those measured for the unalloyed Nb, it was not observed any mechanical relaxation peaks due to the presence of oxygen and nitrogen in solid solution.