Nanoelectromechanical DRAM for ultra-large-scale integration (ULSI)

A Nanoelectromechanical (NEM) device developed for dynamic random access memory (DRAM) is reported. A vertical nanotube structure is employed to form the electromechanical switch and capacitor structure. The mechanical movement of the nanotube defines 'On' and 'OFF' states and the electrical signals which result lead to charge storage in a vertical capacitor structure as in a traditional DRAM. The vertical structure contributes greatly to a decrease in cell dimension. The main concept of the NEM switch and capacitor can be applied to other memory devices as well. © 2005 IEEE.

A novel ultra-fast optical router using time-slot switching

We present a novel optical routing scheme scalable to greater than 50×50 channels with a potential aggregate bit-rate of 1Tbps. The proof-of-principle experiment demonstrates the feasibility of the router with a de-multiplexed Q-factor of 6.35. © 2004 Optical Society of America.