1000 resultados para semiconductor electrode


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The present work explores the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE). Single-crystalline wurtzite structure of GaN NDs is verified by X-ray diffraction and transmission electron microscopy (TEM). The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of GaN NDs were studied in a metal-semiconductor-metal configuration. Dark I-V characteristics of lateral grown GaN NDs obeyed the Frenkel-Poole emission model, and the UV response of the device was stable and reproducible with on/off. The responsivity of the detectors is found to be 330 A/W with an external quantum efficiency of 1100%. (C) 2012 The Japan Society of Applied Physics

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Present work describes the characterization of commercially available ZnO and its electrochemical investigation of dopamine in the presence of ascorbic acid. ZnO was characterized by powder XRD, UV-visible absorption, fluorescence, infrared spectroscopy and scanning electron microscopy. The carbon paste electrode was modified with ZnO and ZnO/polyglycine for further electrochemical investigation of dopamine. The modified electrode shows good electrocatalytic activity towards the detection of dopamine with a reduction in overpotential. The ZnO/polyglycine modified carbon paste electrode (CPE/ZnO/Pgl) shows excellent electrochemical enhancement of peak currents for both dopamine (DA) and ascorbic acid (AA) and for simultaneous detection of DA in the presence of high concentrations of AA with 0.214 V oxidation peak potential differences between them at pH 7.4. From the scan rate variation and concentration, the oxidation of DA and AA was found to be adsorption-controlled. The use of CPE/ZnO/Pgl is demonstrated for the detection of DA in blood serum and injection samples. This journal is © The Royal Society of Chemistry 2012.

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We report on the threshold voltage modeling of ultra-thin (1 nm-5 nm) silicon body double-gate (DG) MOSFETs using self-consistent Poisson-Schrodinger solver (SCHRED). We define the threshold voltage (V th) of symmetric DG MOSFETs as the gate voltage at which the center potential (Φ c) saturates to Φ c (s a t), and analyze the effects of oxide thickness (t ox) and substrate doping (N A) variations on V th. The validity of this definition is demonstrated by comparing the results with the charge transition (from weak to strong inversion) based model using SCHRED simulations. In addition, it is also shown that the proposed V t h definition, electrically corresponds to a condition where the inversion layer capacitance (C i n v) is equal to the oxide capacitance (C o x) across a wide-range of substrate doping densities. A capacitance based analytical model based on the criteria C i n v C o x is proposed to compute Φ c (s a t), while accounting for band-gap widening. This is validated through comparisons with the Poisson-Schrodinger solution. Further, we show that at the threshold voltage condition, the electron distribution (n(x)) along the depth (x) of the silicon film makes a transition from a strong single peak at the center of the silicon film to the onset of a symmetric double-peak away from the center of the silicon film. © 2012 American Institute of Physics.

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ZnO nanoparticles (ZnO NPs) prepared by microwave heating technique are used to modify a gold electrode (ZnO/Au) for the hydrazine detection study. The synthesized product is well characterized by various techniques. Detailed electrochemical investigation of the oxidation of hydrazine on the ZnO/Au electrode in 0.02 M phosphate buffer solution (PBS) of pH 7.4 was carried out. A very low detection limit of 66 nM (S/N=4) and a wide linearity in current for a concentration range from 66.0X10-3 to 415 mu M was achieved by amperometry. The electrode was found to be stable for over a month when preserved in PBS.

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Using first-principles calculations we show that the band gap of bilayer sheets of semiconducting transition-metal dichalcogenides (TMDs) can be reduced smoothly by applying vertical compressive pressure. These materials undergo a universal reversible semiconductor-to-metal (S-M) transition at a critical pressure. The S-M transition is attributed to lifting of the degeneracy of the bands at the Fermi level caused by interlayer interactions via charge transfer from the metal to the chalcogen. The S-M transition can be reproduced even after incorporating the band gap corrections using hybrid functionals and the GW method. The ability to tune the band gap of TMDs in a controlled fashion over a wide range of energy opens up the possibility for its usage in a range of applications.

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Changes in electronic and photovoltaic properties of semiconductor nanocrystals predominantly due to changes in shape are discussed here. Cadmium sulfide (CdS) semiconductor nanocrystals of various shapes (tetrapod, tetrahedron, sphere and rod) obtained using an optimized solvothermal process exhibited a mixed cubic (zinc blende) and hexagonal (wurtzite) crystal structure. The simultaneous presence of the two crystal phases in varying amounts is observed to play a pivotal role in determining both the electronic and photovoltaic properties of the CdS nanocrystals. Light to electrical energy conversion efficiencies (measured in two-electrode configuration laboratory solar cells) remarkably decreased by one order in magnitude from tetrapod -> tetrahedron -> sphere -> rod. The tetrapod-CdS nanocrystals, which displayed the highest light to electrical energy conversion efficiency, showed a favorable shift in position of the conduction band edge leading to highest rate of electron injection (from CdS nanocrystal to the wide band gap semiconductor viz, titanium dioxide, TiO2) and lowest rate of electron-hole recombination (higher free electron lifetimes).

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Surface electrode switching of 16-electrode wireless EIT is studied using a Radio Frequency (RF) based digital data transmission technique operating with 8 channel encoder/decoder ICs. An electrode switching module is developed the analog multiplexers and switched with 8-bit parallel digital data transferred by transmitter/receiver module developed with radio frequency technology. 8-bit parallel digital data collected from the receiver module are converted to 16-bit digital data by using binary adder circuits and then used for switching the electrodes in opposite current injection protocol. 8-bit parallel digital data are generated using NI USB 6251 DAQ card in LabVIEW software and sent to the transmission module which transmits the digital data bits to the receiver end. Receiver module supplies the parallel digital bits to the binary adder circuits and adder circuit outputs are fed to the multiplexers of the electrode switching module for surface electrode switching. 1 mA, 50 kHz sinusoidal constant current is injected at the phantom boundary using opposite current injection protocol. The boundary potentials developed at the voltage electrodes are measured and studied to assess the wireless data transmission.

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In the quest for more efficient photoanodes in the photoelectrochemical oxidation processes for organic pollutant degradation and mineralisation in water treatment, we present the synthesis, characterisation and photoelectrochemical application of expanded graphite-TiO2 composite (EG-TiO2) prepared using the sol-gel method with organically modified silicate. The Brunauer-Emmett-Teller surface area analyser, ultraviolet-visible diffuse reflectance, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffractometry, Raman spectrometry and X-ray photoelectron spectroscopy were employed for the characterisation of the composites. The applicability of the EG-TiO2 as photoanode material was investigated by the photoelectrochemical degradation of p-nitrophenol as a target pollutant in a 0.1 M Na2SO4 (pH 7) solution at a current density of 5 mA cm(-2). After optimising the TiO2 loading, initial p-nitrophenol concentration, pH and current density, a removal efficiency of 62% with an apparent kinetic rate constant of 10.4 x 10(-3) min(-1) was obtained for the photoelectrochemical process as compared to electrochemical oxidation and photolysis, where removal efficiencies of 6% and 24% were obtained respectively after 90 min. Furthermore, the EG-TiO2 electrode was able to withstand high current density due to its high stability. The EG-TiO2 electrode was also used to degrade 0.3 x 10(-4) M methylene blue and 0.1 x 10(-4) M Eosin Yellowish, leading to 94% and 47% removal efficiency within 120 reaction time. This confirms the suitability of the EG-TiO2 electrode to degrade other organic pollutants.

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Carbonaceous nickel oxide powder samples have been synthesized from an adducted nickel beta-ketoester complex used as a ``single source precursor'' through a solution-based microwave-assisted chemical route. Comprehensive analysis of the resulting powder material has been carried out using various characterization techniques. These analysis reveal that, depending on the solvent used, either NiO/C or Ni/NiO/C composites are formed, wherein Ni and/or NiO nanocrystals are enveloped in amorphous carbon. As the components emerge from the same molecular source, the composites are homogeneous on a fine scale, making them promising electrode materials for supercapacitors. Electrochemical capacitive behavior of these oxide composites is studied in a three-electrode configuration. With a specific capacitance of 113 F g(-1), Ni/NiO/C is superior to NiO/C as capacitor electrode material, in 0.1 M Na2SO4 electrolyte. This is confirmed by impedance measurements, which show that charge-transfer resistance and equivalent series resistance are lower in Ni/NiO/C than in NiO/C, presumably because of the presence of metallic nickel in the former. The cyclic voltammograms are nearly rectangular and the electrodes display excellent cyclability in different electrolytes: Na2SO4, KOH and Ca(NO3)(2)center dot 4H(2)O. Specific capacitance as high as 143 F g(-1), is measured in Ca(NO3)(2)center dot 4H(2)O electrolyte.

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Ellagic acid, a naturally occurring polyphenol, extracted from pomegranate husk, is found to be a very good organic electrode material for rechargeable lithium batteries with high reversible capacities of similar to 450 and 200 mA h g(-1) at C/10 and C/2.5 discharge rates, respectively; ex situ NMR studies reveal possible lithiation-delithiation modes at different stages of the charge-discharge process.

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In this paper, we analyze the combined effects of size quantization and device temperature variations (T = 50K to 400 K) on the intrinsic carrier concentration (n(i)), electron concentration (n) and thereby on the threshold voltage (V-th) for thin silicon film (t(si) = 1 nm to 10 nm) based fully-depleted Double-Gate Silicon-on-Insulator MOSFETs. The threshold voltage (V-th) is defined as the gate voltage (V-g) at which the potential at the center of the channel (Phi(c)) begins to saturate (Phi(c) = Phi(c(sat))). It is shown that in the strong quantum confinement regime (t(si) <= 3nm), the effects of size quantization far over-ride the effects of temperature variations on the total change in band-gap (Delta E-g(eff)), intrinsic carrier concentration (n(i)), electron concentration (n), Phi(c(sat)) and the threshold voltage (V-th). On the other hand, for t(si) >= 4 nm, it is shown that size quantization effects recede with increasing t(si), while the effects of temperature variations become increasingly significant. Through detailed analysis, a physical model for the threshold voltage is presented both for the undoped and doped cases valid over a wide-range of device temperatures, silicon film thicknesses and substrate doping densities. Both in the undoped and doped cases, it is shown that the threshold voltage strongly depends on the channel charge density and that it is independent of incomplete ionization effects, at lower device temperatures. The results are compared with the published work available in literature, and it is shown that the present approach incorporates quantization and temperature effects over the entire temperature range. We also present an analytical model for V-th as a function of device temperature (T). (C) 2013 AIP Publishing LLC.

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Several concepts have been developed in the recent years for nanomaterial based integrated MEMS platform in order to accelerate the process of biological sample preparation followed by selective screening and identification of target molecules. In this context, there exist several challenges which need to be addressed in the process of electrical lysis of biological cells. These are due to (i) low resource settings while achieving maximal lysis (ii) high throughput of target molecules to be detected (iii) automated extraction and purification of relevant molecules such as DNA and protein from extremely small volume of sample (iv) requirement of fast, accurate and yet scalable methods (v) multifunctionality toward process monitoring and (vi) downward compatibility with already existing diagnostic protocols. This paper reports on the optimization of electrical lysis process based on various different nanocomposite coated electrodes placed in a microfluidic channel. The nanocomposites are synthesized using different nanomaterials like Zinc nanorod dispersion in polymer. The efficiency of electrical lysis with various different electrode coatings has been experimentally verified in terms of DNA concentration, amplification and protein yield. The influence of the coating thickness on the injection current densities has been analyzed. We further correlate experimentally the current density vs. voltage relationship with the extent of bacterial cell lysis. A coupled multiphysics based simulation model is used to predict the cell trajectories and lysis efficiencies under various electrode boundary conditions as estimated from experimental results. Detailed in-situ fluorescence imaging and spectroscopy studies are performed to validate various hypotheses.

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In this paper we study the effective electron mass (EEM) in Nano wires (NWs) of nonlinear optical materials on the basis of newly formulated electron dispersion relation by considering all types of anisotropies of the energy band constants within the framework of k . p formalism. The results for NWs of III-V, ternary and quaternary semiconductors form special cases of our generalized analysis. We have also investigated the EEM in NWs of Bi, IV-VI, stressed Kane type materials, Ge, GaSb and Bi2Te3 by formulating the appropriate 1D dispersion law in each case by considering the influence of energy band constants in the respective cases. It has been found that the 1D EEM in nonlinear optical materials depend on the size quantum numbers and Fermi energy due to the anisotropic spin orbit splitting constant and the crystal field splitting respectively. The 1D EEM is Bi, IV-VI, stressed Kane type semiconductors and Ge also depends on both the Fermi energy and the size quantum numbers which are the characteristic features of such NWs. The EEM increases with increase in concentration and decreasing film thickness and for ternary and quaternary compounds the EEM increases with increase in alloy composition. Under certain special conditions all the results for all the materials get simplified into the well known parabolic energy bands and thus confirming the compatibility test.

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Gold nanoparticles decorated reduced graphene oxide (Au-RGO) catalyst for O-2 electrode is prepared by in situ reduction of Au3+ ions and graphene oxide dispersed in water. The Au nanoparticles are uniformly distributed on the two-dimensional RGO layers. Li-O-2 cells assembled in a non-aqueous electrolyte using Au-RGO catalyst exhibit an initial discharge capacity as high as 5.89 mA h cm-(2) (5230 mA h g(-1))at a current density of 0.1 mA cm(-2). The voltage gap between the charge and discharge curves is less for Li-O-2(Au-RGO) cell in comparison with Li-O-2(RGO) cell. The Li-O-2(Au-RGO) cells are cycled over about 120 charge-discharge cycles. The results suggest that Au-RGO is a promising catalyst for rechargeable Li-O-2 cells.

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Lithium-rich manganese oxide (Li2MnO3) is prepared by reverse microemulsion method employing Pluronic acid (P123) as a soft template and studied as a positive electrode material. The as-prepared sample possesses good crystalline structure with a broadly distributed mesoporosity but low surface area. As expected, cyclic voltammetry and charge-discharge data indicate poor electrochemical activity. However, the sample gains surface area with narrowly distributed mesoporosity and also electrochemical activity after treating in 4 M H2SO4. A discharge capacity of about 160 mAh g(-1) is obtained. When the acid-treated sample is heated at 300 A degrees C, the resulting porous sample with a large surface area and dual porosity provides a discharge capacity of 240 mAh g(-1). The rate capability study suggests that the sample provides about 150 mAh g(-1) at a specific discharge current of 1.25 A g(-1). Although the cycling stability is poor, the high rate capability is attributed to porous nature of the material.