970 resultados para pure-phase object


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A fast and reliable phase unwrapping (PhU) algorithm, based on the local quality-guided fitting plane, is presented. Its framework depends on the basic plane-approximated assumption for phase values of local pixels and on the phase derivative variance (PDV) quality map. Compared with other existing popular unwrapping algorithms, the proposed algorithm demonstrated improved robustness and immunity to strong noise and high phase variations, given that the plane assumption for local phase is reasonably satisfied. Its effectiveness is demonstrated by computer-simulated and experimental results.

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We present a novel phase-shifting vectorial-shearing interferometer with a wedge plate phase-shifter. The interferometer is based on a modified Mach-Zehnder configuration; the common-path nature makes it capable of testing the wavefront of a short coherence-length light source, such as a laser diode. Vectorial shear (shearing in the x and y directions simultaneously) in an arbitrary direction is introduced by inserting two wedge plates orthogonally in two arms, respectively. One of the wedge plates is split into two parts (parallel part and wedge part); phase shift is produced by moving the wedge part in contact along the parallel part. The moving distance for a 2 pi phase shift is a few millimetres in specific conditions. The wedge plate phase-shifter increases the moving distance for phase shift and makes the control of phase shift relatively easy. We also discuss the lateral shear error and phase shift errors induced by wedge plates. The lateral shear error is small enough to be ignored; the phase shift error is determined mainly by the wedge angle error. Lastly, we give the experimental results of phase-shifting interference fringes in vectorial shear mode.

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We have measured sputtering yields and angular distributions of sputtered atoms from both the solid and liquid phases of gallium, indium, and the gallium-indium eutectic alloy. This was done by Rutherford backscattering analysis of graphite collector foils. The solid eutectic target shows a predominance of indium crystallites on its surface which have to be sputtered away before the composition of the sputtered atoms equals the bulk target composition. The size of the crystallites depends upon the conditions under which the alloy is frozen. The sputtering of the liquid eutectic alloy by 15 keV Ar+ results in a ratio of indium to gallium sputtering yields which is 28 times greater than would be expected from the target stoichiometry. Furthermore, the angular distribution of gallium is much more sharply peaked about the normal to the target surface than the indium distribution. When the incident Ar+ energy is increased to 25 keV, the gallium distribution broadens to the same shape as the indium distribution. With the exception of the sharp gallium distribution taken from the liquid eutectic at 15 keV, all angular distributions from liquid targets fit a cos2 θ function. An ion-scattering-spectroscopy analysis of the liquid eutectic alloy reveals a surface layer of almost pure indium. A thermodynamic explanation for this highly segregated layer is discussed. The liquid eutectic alloy provides us with a unique target system which allows us to estimate the fraction of sputtered material which comes from the first monolayer of the surface.

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We demonstrate a full-range parallel Fourier-domain optical coherence tomography (FD-OCT) in which a tomogram free of mirror images as well as DC and autocorrelation terms is obtained in parallel. The phase and amplitude of two-dimensional spectral interferograms are accurately detected by using sinusoidal phase-modulating interferometry and a two-dimensional CCD camera, which allows for the reconstruction of two-dimensional complex spectral interferograms. By line-by-line inverse Fourier transformation of the two-dimensional complex spectral interferogram, a full-range parallel FD-OCT is realized. Tomographic images of two separated glass coverslips obtained with our method are presented as a proof-of-principle experiment.

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Part I:

The perturbation technique developed by Rannie and Marble is used to study the effect of droplet solidification upon two-phase flow in a rocket nozzle. It is shown that under certain conditions an equilibrium flow exists, where the gas and particle phases have the same velocity and temperature at each section of the nozzle. The flow is divided into three regions: the first region, where the particles are all in the form of liquid droplets; a second region, over which the droplets solidify at constant freezing temperature; and a third region, where the particles are all solid. By a perturbation about the equilibrium flow, a solution is obtained for small particle slip velocities using the Stokes drag law and the corresponding approximation for heat transfer between the particle and gas phases. Singular perturbation procedure is required to handle the problem at points where solidification first starts and where it is complete. The effects of solidification are noticeable.

Part II:

When a liquid surface, in contact with only its pure vapor, is not in the thermodynamic equilibrium with it, a net condensation or evaporation of fluid occurs. This phenomenon is studied from a kinetic theory viewpoint by means of moment method developed by Lees. The evaporation-condensation rate is calculated for a spherical droplet and for a liquid sheet, when the temperatures and pressures are not too far removed from their equilibrium values. The solutions are valid for the whole range of Knudsen numbers from the free molecule to the continuum limit. In the continuum limit, the mass flux rate is proportional to the pressure difference alone.

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A phase-locking fibre laser array with up to 60 W of coherent output power based on two large-core fibre is reported. The slope efficiency of the in-phase mode is 37%. For two cases of spacings between the cores, steady high-contrast interference stripes are observed. When the whole system operates under a high pump power level, no thermal effects for the spatial filter have been observed, which means that we can increase the coherent output power further by increasing the individual fibre laser power.

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This paper presents a new online multi-classifier boosting algorithm for learning object appearance models. In many cases the appearance model is multi-modal, which we capture by training and updating multiple strong classifiers. The proposed algorithm jointly learns the classifiers and a soft partitioning of the input space, defining an area of expertise for each classifier. We show how this formulation improves the specificity of the strong classifiers, allowing simultaneous location and pose estimation in a tracking task. The proposed online scheme iteratively adapts the classifiers during tracking. Experiments show that the algorithm successfully learns multi-modal appearance models during a short initial training phase, subsequently updating them for tracking an object under rapid appearance changes. © 2010 IEEE.

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This paper introduces a method by which intuitive feature entities can be created from ILP (InterLevel Product) coefficients. The ILP transform is a pyramid of decimated complex-valued coefficients at multiple scales, derived from dual-tree complex wavelets, whose phases indicate the presence of different feature types (edges and ridges). We use an Expectation-Maximization algorithm to cluster large ILP coefficients that are spatially adjacent and similar in phase. We then demonstrate the relationship that these clusters possess with respect to observable image content, and conclude with a look at potential applications of these clusters, such as rotation- and scale-invariant object recognition. © 2005 IEEE.

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Composites of magnetoresistive La 0.7Ca 0.3MnO 3 (LCMO) with insulating Mn 3O 4 are useful as a model system because no foreign cation is introduced in the LCMO phase by interdiffusion during the heat treatment. Here we report the magnetotransport properties as a function of sintering temperature T sinter for a fixed LCMO/Mn 3O 4 ratio. Decreasing T sinter from 1250 °C to 800 °C causes an increase in low field magnetoresistance (LFMR) that correlates with the decrease in crystallite size (CS) of the LCMO phase. When plotting LFMR at (77 K, 0.5 T) versus 1/CS, we find that the data for the LCMO/Mn 3O 4 composites sintered between 800 °C and 1250 °C follow the same trend line as data from the literature for pure LCMO samples with crystallite size >∼25 nm. This differs from the LFMR enhancement observed by many authors in the usual manganite composites, i.e., composites where the insulating phase contains cations other than La, Ca or Mn. This difference suggests that diffusion of foreign cations into the grain boundary region is a necessary ingredient for the enhanced LFMR. © 2012 American Institute of Physics.

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Superradiance (SR), or cooperative spontaneous emission, has been predicted by R. Dicke before the invention of the laser. During the last few years one can see a renaissance of both experimental and theoretical studies of the superradiant phase transition in a variety of media, ranging from quantum dots and Bose condensates through to black holes. Until recently, despite of many years of research, SR has been considered as a phenomenon of pure scientific interest without obvious potential applications. However, recent investigations of the femtosecond SR emission generation from semiconductors have opened up some practical opportunities for the exploitation of this quantum optics phenomenon. Here we present a brief review of some features, advantages and potential applications of the SR generation from semiconductor laser structures

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We suggest a different practical scheme for the direct detection of pure spin current by using the two-color Faraday rotation of optical quantum interference process (QUIP) in a semiconductor system. We demonstrate theoretically that the Faraday rotation of QUIP depends sensitively on the spin orientation and wave vector of the carriers, and can be tuned by the relative phase and the polarization direction of the omega and 2 omega laser beams. By adjusting these parameters, the magnitude and direction of the spin current can be detected.

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The relaxation of the misfit strain by the formation of misfit dislocations in InxGa1-xN/GaN multiple quantum wells grown by metal-organic chemical-vapor deposition was investigated by the cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. It is found that the misfit dislocations generated from strain relaxation are all pure-edge threading dislocations with burgers vectors of b=1/3<11 (2) over bar0>. The misfit dislocations arise from the strain relaxation due to the thickness of strained layer greater than the critical thickness. The relaxation of strained layer was mainly achieved by the formation of dislocations and localization of In, while the dislocations changed their slip planes from {0001} to {10 (1) over bar0}. With the increasing temperature, the efficiency of photoluminescence decrease sharply. It indicates that the relaxation of the misfit strain has a strong effect on optical efficiency of film. (C) 2004 American Institute of Physics.

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To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar+ ions over a large fluence range up to 2 x 10(16) cm(-2). Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp(2)-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 x 10(15) cm(-2). This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment. (c) 2005 Elsevier B.V. All rights reserved.

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Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

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In this letter, we investigated the effect of the buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(0 0 1) substrate. The reflection high-energy electron diffraction (RHEED) pattern of the low-temperature GaN buffer layers shows that both the deposition temperature and time are important in obtaining a smooth surface. Four-circle X-ray double-crystal diffraction (XRDCD) reciprocal space mapping was used to study the hexagonal phase inclusions in the cubic GaN (c-GaN) films grown on the buffer layers. The calculation of the volume contents of the hexagonal phase shows that higher temperature and longer time deposition of the buffer layer is not preferable for growing pure c-GaN film. Under optimized condition, 47 meV FWHM of near band gap emission of the c-GaN film was achieved. (C) 2000 Elsevier Science B.V. All rights reserved.