699 resultados para nanoimprint lithography (NIL)


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Mode of access: Internet.

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Series title also at head of t.-p.

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Mode of access: Internet.

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Mode of access: Internet.

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Advertising matter: p. 328-348.

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von Dr. Karl Dove, Lehrer der kolonialen Landeskunde am Seminar für orientalische Sprachen, Privatdozent der Geographie an der Universität zu Berlin

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A flexible method for fabricating shallow optical waveguides by using femtosecond laser writing of patterns on a metal coated glass substrate followed by ion-exchange is described. This overcomes the drawbacks of low index contrast and high induced stress in waveguides directly written using low-repetition rate ultrafast laser systems. When compared to conventional lithography, the technique is simpler and has advantages in terms of flexibility in the types of structures which can be fabricated.

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A flexible method for fabricating shallow optical waveguides by using femtosecond laser writing of patterns on a metal coated glass substrate followed by ion-exchange is described. This overcomes the drawbacks of low index contrast and high induced stress in waveguides directly written using low-repetition rate ultrafast laser systems. When compared to conventional lithography, the technique is simpler and has advantages in terms of flexibility in the types of structures which can be fabricated.

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DUE TO COPYRIGHT RESTRICTIONS ONLY AVAILABLE FOR CONSULTATION AT ASTON UNIVERSITY LIBRARY AND INFORMATION SERVICES WITH PRIOR ARRANGEMENT

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The authors report a chemical process to remove the native oxide on Ge and Bi2Se3 crystals, thus facilitating high-resolution electron beam lithography (EBL) on their surfaces using a hydrogen silsesquioxane (HSQ) resist. HSQ offers the highest resolution of all the commercially available EBL resists. However, aqueous HSQ developers such as NaOH and tetramethylammonium hydroxide have thus far prevented the fabrication of high-resolution structures via the direct application of HSQ to Ge and Bi2Se3, due to the solubility of components of their respective native oxides in these strong aqueous bases. Here we provide a route to the generation of ordered, high-resolution, high-density Ge and Bi2Se3 nanostructures with potential applications in microelectronics, thermoelectric, and photonics devices.